JP2018197257A5 - - Google Patents

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JP2018197257A5
JP2018197257A5 JP2018153215A JP2018153215A JP2018197257A5 JP 2018197257 A5 JP2018197257 A5 JP 2018197257A5 JP 2018153215 A JP2018153215 A JP 2018153215A JP 2018153215 A JP2018153215 A JP 2018153215A JP 2018197257 A5 JP2018197257 A5 JP 2018197257A5
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JP2018153215A
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JP7077180B2 (ja
JP2018197257A (ja
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JP2018153215A 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物 Active JP7077180B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016191858 2016-09-29
JP2016191858 2016-09-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2018524857A Division JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

Publications (3)

Publication Number Publication Date
JP2018197257A JP2018197257A (ja) 2018-12-13
JP2018197257A5 true JP2018197257A5 (enExample) 2020-09-10
JP7077180B2 JP7077180B2 (ja) 2022-05-30

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ID=61759590

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018524857A Active JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物
JP2018153215A Active JP7077180B2 (ja) 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2018524857A Active JP6401426B2 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

Country Status (8)

Country Link
US (2) US10934316B2 (enExample)
EP (1) EP3521296B1 (enExample)
JP (2) JP6401426B2 (enExample)
KR (1) KR102569148B1 (enExample)
CN (2) CN114957316B (enExample)
CA (1) CA3036035A1 (enExample)
TW (1) TW201827446A (enExample)
WO (1) WO2018061869A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
WO2018160037A1 (ko) * 2017-03-03 2018-09-07 에스케이케미칼주식회사 양자점 제조용 포스핀 전구체 및 이로 부터 제조되는 양자점
KR102595255B1 (ko) 2017-05-18 2023-10-27 에스케이케미칼 주식회사 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점
JP7177142B2 (ja) * 2018-03-27 2022-11-22 日本化学工業株式会社 InP量子ドットの製造方法
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 InP量子ドット前駆体の製造方法及びInP系量子ドットの製造方法
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
WO2025129020A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
FR2986527B1 (fr) * 2012-02-02 2014-03-07 Ecole Polytechnique Dgar Procede de preparation de phosphines tertiaires et de derives de celles-ci.
KR102334258B1 (ko) * 2014-11-18 2021-12-03 에스케이케미칼 주식회사 트리스(트리알킬실릴)포스핀의 제조방법
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
US11578266B2 (en) * 2018-03-27 2023-02-14 Nippon Chemical Industrial Co., Ltd. Silyl phosphine compound, process for producing silyl phosphine compound and process for producing InP quantum dots
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법

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