JP6401426B2 - シリルホスフィン化合物の製造方法及びシリルホスフィン化合物 - Google Patents

シリルホスフィン化合物の製造方法及びシリルホスフィン化合物 Download PDF

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JP6401426B2
JP6401426B2 JP2018524857A JP2018524857A JP6401426B2 JP 6401426 B2 JP6401426 B2 JP 6401426B2 JP 2018524857 A JP2018524857 A JP 2018524857A JP 2018524857 A JP2018524857 A JP 2018524857A JP 6401426 B2 JP6401426 B2 JP 6401426B2
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silylphosphine
silylphosphine compound
phosphine
general formula
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JPWO2018061869A1 (ja
Inventor
洋介 田久保
洋介 田久保
田村　健
健 田村
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Nippon Chemical Industrial Co Ltd
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Nippon Chemical Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/062—Organo-phosphoranes without P-C bonds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
JP2018524857A 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物 Active JP6401426B2 (ja)

Applications Claiming Priority (3)

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JP2016191858 2016-09-29
JP2016191858 2016-09-29
PCT/JP2017/033724 WO2018061869A1 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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JP2018153215A Division JP7077180B2 (ja) 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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JPWO2018061869A1 JPWO2018061869A1 (ja) 2018-09-27
JP6401426B2 true JP6401426B2 (ja) 2018-10-10

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JP2018153215A Active JP7077180B2 (ja) 2016-09-29 2018-08-16 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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US (2) US10934316B2 (enExample)
EP (1) EP3521296B1 (enExample)
JP (2) JP6401426B2 (enExample)
KR (1) KR102569148B1 (enExample)
CN (2) CN114957316B (enExample)
CA (1) CA3036035A1 (enExample)
TW (1) TW201827446A (enExample)
WO (1) WO2018061869A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
WO2018160037A1 (ko) * 2017-03-03 2018-09-07 에스케이케미칼주식회사 양자점 제조용 포스핀 전구체 및 이로 부터 제조되는 양자점
KR102595255B1 (ko) 2017-05-18 2023-10-27 에스케이케미칼 주식회사 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점
JP7177142B2 (ja) * 2018-03-27 2022-11-22 日本化学工業株式会社 ＩｎＰ量子ドットの製造方法
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 ＩｎＰ量子ドット前駆体の製造方法及びＩｎＰ系量子ドットの製造方法
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
WO2025129020A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
FR2986527B1 (fr) * 2012-02-02 2014-03-07 Ecole Polytechnique Dgar Procede de preparation de phosphines tertiaires et de derives de celles-ci.
KR102334258B1 (ko) * 2014-11-18 2021-12-03 에스케이케미칼 주식회사 트리스(트리알킬실릴)포스핀의 제조방법
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
US11578266B2 (en) * 2018-03-27 2023-02-14 Nippon Chemical Industrial Co., Ltd. Silyl phosphine compound, process for producing silyl phosphine compound and process for producing InP quantum dots
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법

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Publication number Publication date
EP3521296A1 (en) 2019-08-07
US20190263845A1 (en) 2019-08-29
CN109715643B (zh) 2022-06-28
EP3521296B1 (en) 2020-10-28
US10934316B2 (en) 2021-03-02
JPWO2018061869A1 (ja) 2018-09-27
WO2018061869A1 (ja) 2018-04-05
JP7077180B2 (ja) 2022-05-30
KR102569148B1 (ko) 2023-08-23
EP3521296A4 (en) 2019-08-28
CN114957316A (zh) 2022-08-30
CA3036035A1 (en) 2018-04-05
KR20190059268A (ko) 2019-05-30
CN109715643A (zh) 2019-05-03
US20210171551A1 (en) 2021-06-10
TW201827446A (zh) 2018-08-01
JP2018197257A (ja) 2018-12-13
US11512103B2 (en) 2022-11-29
CN114957316B (zh) 2025-02-07

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