TW201827446A - 甲矽烷基膦化合物的製造方法及甲矽烷基膦化合物 - Google Patents

甲矽烷基膦化合物的製造方法及甲矽烷基膦化合物 Download PDF

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Publication number
TW201827446A
TW201827446A TW106132772A TW106132772A TW201827446A TW 201827446 A TW201827446 A TW 201827446A TW 106132772 A TW106132772 A TW 106132772A TW 106132772 A TW106132772 A TW 106132772A TW 201827446 A TW201827446 A TW 201827446A
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TW
Taiwan
Prior art keywords
silylphosphine
compound
general formula
silylphosphine compound
item
Prior art date
Application number
TW106132772A
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English (en)
Chinese (zh)
Inventor
田久保洋介
田村健
Original Assignee
日商日本化學工業股份有限公司
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Publication of TW201827446A publication Critical patent/TW201827446A/zh

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/06Phosphorus compounds without P—C bonds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/06Phosphorus compounds without P—C bonds
    • C07F9/062Organo-phosphoranes without P-C bonds
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/082Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087Other phosphides of boron, aluminium, gallium or indium of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
TW106132772A 2016-09-29 2017-09-25 甲矽烷基膦化合物的製造方法及甲矽烷基膦化合物 TW201827446A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016191858 2016-09-29
JP2016-191858 2016-09-29

Publications (1)

Publication Number Publication Date
TW201827446A true TW201827446A (zh) 2018-08-01

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Family Applications (1)

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TW106132772A TW201827446A (zh) 2016-09-29 2017-09-25 甲矽烷基膦化合物的製造方法及甲矽烷基膦化合物

Country Status (8)

Country Link
US (2) US10934316B2 (enExample)
EP (1) EP3521296B1 (enExample)
JP (2) JP6401426B2 (enExample)
KR (1) KR102569148B1 (enExample)
CN (2) CN114957316B (enExample)
CA (1) CA3036035A1 (enExample)
TW (1) TW201827446A (enExample)
WO (1) WO2018061869A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113905980A (zh) * 2019-04-16 2022-01-07 日本化学工业株式会社 InP量子点前体的制造方法和InP系量子点的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
WO2018160037A1 (ko) * 2017-03-03 2018-09-07 에스케이케미칼주식회사 양자점 제조용 포스핀 전구체 및 이로 부터 제조되는 양자점
KR102595255B1 (ko) 2017-05-18 2023-10-27 에스케이케미칼 주식회사 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점
JP7177142B2 (ja) * 2018-03-27 2022-11-22 日本化学工業株式会社 InP量子ドットの製造方法
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 InP量子ドット前駆体の製造方法及びInP系量子ドットの製造方法
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
WO2025129020A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
FR2986527B1 (fr) * 2012-02-02 2014-03-07 Ecole Polytechnique Dgar Procede de preparation de phosphines tertiaires et de derives de celles-ci.
KR102334258B1 (ko) * 2014-11-18 2021-12-03 에스케이케미칼 주식회사 트리스(트리알킬실릴)포스핀의 제조방법
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
US11578266B2 (en) * 2018-03-27 2023-02-14 Nippon Chemical Industrial Co., Ltd. Silyl phosphine compound, process for producing silyl phosphine compound and process for producing InP quantum dots
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113905980A (zh) * 2019-04-16 2022-01-07 日本化学工业株式会社 InP量子点前体的制造方法和InP系量子点的制造方法

Also Published As

Publication number Publication date
EP3521296A1 (en) 2019-08-07
US20190263845A1 (en) 2019-08-29
CN109715643B (zh) 2022-06-28
EP3521296B1 (en) 2020-10-28
US10934316B2 (en) 2021-03-02
JPWO2018061869A1 (ja) 2018-09-27
WO2018061869A1 (ja) 2018-04-05
JP7077180B2 (ja) 2022-05-30
KR102569148B1 (ko) 2023-08-23
EP3521296A4 (en) 2019-08-28
CN114957316A (zh) 2022-08-30
CA3036035A1 (en) 2018-04-05
KR20190059268A (ko) 2019-05-30
CN109715643A (zh) 2019-05-03
US20210171551A1 (en) 2021-06-10
JP2018197257A (ja) 2018-12-13
JP6401426B2 (ja) 2018-10-10
US11512103B2 (en) 2022-11-29
CN114957316B (zh) 2025-02-07

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