KR102569148B1 - 실릴포스핀 화합물의 제조 방법 및 실릴포스핀 화합물 - Google Patents

실릴포스핀 화합물의 제조 방법 및 실릴포스핀 화합물 Download PDF

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KR102569148B1
KR102569148B1 KR1020197006733A KR20197006733A KR102569148B1 KR 102569148 B1 KR102569148 B1 KR 102569148B1 KR 1020197006733 A KR1020197006733 A KR 1020197006733A KR 20197006733 A KR20197006733 A KR 20197006733A KR 102569148 B1 KR102569148 B1 KR 102569148B1
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silylphosphine
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silylphosphine compound
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KR20190059268A (ko
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요스케 다쿠보
겐 다무라
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니폰 가가쿠 고교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/062—Organo-phosphoranes without P-C bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Inorganic Chemistry (AREA)
KR1020197006733A 2016-09-29 2017-09-19 실릴포스핀 화합물의 제조 방법 및 실릴포스핀 화합물 Active KR102569148B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-191858 2016-09-29
JP2016191858 2016-09-29
PCT/JP2017/033724 WO2018061869A1 (ja) 2016-09-29 2017-09-19 シリルホスフィン化合物の製造方法及びシリルホスフィン化合物

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KR20190059268A KR20190059268A (ko) 2019-05-30
KR102569148B1 true KR102569148B1 (ko) 2023-08-23

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US (2) US10934316B2 (enExample)
EP (1) EP3521296B1 (enExample)
JP (2) JP6401426B2 (enExample)
KR (1) KR102569148B1 (enExample)
CN (2) CN114957316B (enExample)
CA (1) CA3036035A1 (enExample)
TW (1) TW201827446A (enExample)
WO (1) WO2018061869A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
WO2018160037A1 (ko) * 2017-03-03 2018-09-07 에스케이케미칼주식회사 양자점 제조용 포스핀 전구체 및 이로 부터 제조되는 양자점
KR102595255B1 (ko) 2017-05-18 2023-10-27 에스케이케미칼 주식회사 양자점 제조용 포스핀 전구체 및 이로부터 제조되는 양자점
JP7177142B2 (ja) * 2018-03-27 2022-11-22 日本化学工業株式会社 ＩｎＰ量子ドットの製造方法
JP7508217B2 (ja) * 2019-04-16 2024-07-01 日本化学工業株式会社 ＩｎＰ量子ドット前駆体の製造方法及びＩｎＰ系量子ドットの製造方法
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법
KR102286852B1 (ko) * 2019-04-24 2021-08-06 주식회사 제우스이엔피 실리콘질화막 식각액 조성물의 제조방법
WO2025129020A1 (en) * 2023-12-15 2025-06-19 Asm Ip Holding B.V. Methods and systems for forming a layer comprising silicon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907785A (en) * 1957-10-07 1959-10-06 Du Pont Organic compounds of silicon and phosphorus and their preparation
DD274626A1 (de) 1988-06-09 1989-12-27 Univ Halle Wittenberg Verfahren zur herstellung von organosilylphosphanen
KR100274626B1 (ko) 1997-12-26 2000-12-15 윤종용 원고비틀림보정장치및방법
JP2002313746A (ja) 2001-04-18 2002-10-25 Mitsubishi Chemicals Corp 半導体超微粒子の製造方法
KR102334258B1 (ko) * 2014-11-18 2021-12-03 에스케이케미칼 주식회사 트리스(트리알킬실릴)포스핀의 제조방법
US10934316B2 (en) * 2016-09-29 2021-03-02 Nippon Chemical Industrial Co., Ltd. Process for producing silyl phosphine compound and silyl phosphine compound
US11578266B2 (en) * 2018-03-27 2023-02-14 Nippon Chemical Industrial Co., Ltd. Silyl phosphine compound, process for producing silyl phosphine compound and process for producing InP quantum dots
KR20210152053A (ko) * 2019-04-16 2021-12-14 니폰 가가쿠 고교 가부시키가이샤 InP 양자 도트 전구체의 제조 방법 및 InP계 양자 도트의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114311A1 (fr) * 2012-02-02 2013-08-08 Ecole Polytechnique Procede de preparation de phosphines tertiaires et de derives de celles-ci

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Publication number Publication date
EP3521296A1 (en) 2019-08-07
US20190263845A1 (en) 2019-08-29
CN109715643B (zh) 2022-06-28
EP3521296B1 (en) 2020-10-28
US10934316B2 (en) 2021-03-02
JPWO2018061869A1 (ja) 2018-09-27
WO2018061869A1 (ja) 2018-04-05
JP7077180B2 (ja) 2022-05-30
EP3521296A4 (en) 2019-08-28
CN114957316A (zh) 2022-08-30
CA3036035A1 (en) 2018-04-05
KR20190059268A (ko) 2019-05-30
CN109715643A (zh) 2019-05-03
US20210171551A1 (en) 2021-06-10
TW201827446A (zh) 2018-08-01
JP2018197257A (ja) 2018-12-13
JP6401426B2 (ja) 2018-10-10
US11512103B2 (en) 2022-11-29
CN114957316B (zh) 2025-02-07

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