JP2018182022A5 - - Google Patents
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- JP2018182022A5 JP2018182022A5 JP2017078237A JP2017078237A JP2018182022A5 JP 2018182022 A5 JP2018182022 A5 JP 2018182022A5 JP 2017078237 A JP2017078237 A JP 2017078237A JP 2017078237 A JP2017078237 A JP 2017078237A JP 2018182022 A5 JP2018182022 A5 JP 2018182022A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- imaging device
- solid
- state imaging
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 description 144
- 238000003384 imaging method Methods 0.000 description 104
- 239000010410 layer Substances 0.000 description 85
- 230000010287 polarization Effects 0.000 description 78
- 239000010408 film Substances 0.000 description 46
- 230000001681 protective effect Effects 0.000 description 29
- 239000000758 substrate Substances 0.000 description 22
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 239000004020 conductor Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000007769 metal material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- -1 aluminum (AlO x ) Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QRPMCZNLJXJVSG-UHFFFAOYSA-N trichloro(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[Si](Cl)(Cl)Cl QRPMCZNLJXJVSG-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017078237A JP6833597B2 (ja) | 2017-04-11 | 2017-04-11 | 固体撮像装置 |
| PCT/JP2018/009261 WO2018190049A1 (en) | 2017-04-11 | 2018-03-09 | Solid-state imaging apparatus |
| US16/499,911 US11004884B2 (en) | 2017-04-11 | 2018-03-09 | Solid-state imaging apparatus |
| DE112018001963.2T DE112018001963T5 (de) | 2017-04-11 | 2018-03-09 | Festkörperbildgebungsvorrichtung |
| CN201880022868.8A CN110546763B (zh) | 2017-04-11 | 2018-03-09 | 成像器件和电子装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017078237A JP6833597B2 (ja) | 2017-04-11 | 2017-04-11 | 固体撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018182022A JP2018182022A (ja) | 2018-11-15 |
| JP2018182022A5 true JP2018182022A5 (enExample) | 2020-05-07 |
| JP6833597B2 JP6833597B2 (ja) | 2021-02-24 |
Family
ID=61768375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017078237A Active JP6833597B2 (ja) | 2017-04-11 | 2017-04-11 | 固体撮像装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11004884B2 (enExample) |
| JP (1) | JP6833597B2 (enExample) |
| CN (1) | CN110546763B (enExample) |
| DE (1) | DE112018001963T5 (enExample) |
| WO (1) | WO2018190049A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108965704B (zh) * | 2018-07-19 | 2020-01-31 | 维沃移动通信有限公司 | 一种图像传感器、移动终端及图像拍摄方法 |
| CN110574166A (zh) * | 2019-07-30 | 2019-12-13 | 深圳市汇顶科技股份有限公司 | 图像传感器及其制造方法、芯片及手持装置 |
| JP2021035015A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社東芝 | 固体撮像装置 |
| CN112466895A (zh) * | 2019-09-06 | 2021-03-09 | 世界先进积体电路股份有限公司 | 光学感测器及其形成方法 |
| KR102704191B1 (ko) * | 2019-10-23 | 2024-09-05 | 삼성전자주식회사 | 이미지 센서 |
| EP4057352A4 (en) * | 2019-11-08 | 2023-03-15 | Sony Semiconductor Solutions Corporation | SEMICONDUCTOR IMAGING ELEMENT AND IMAGING DEVICE |
| WO2021095613A1 (ja) * | 2019-11-15 | 2021-05-20 | Agc株式会社 | 光学フィルタおよびこれを用いた指紋検出装置 |
| US11515437B2 (en) * | 2019-12-04 | 2022-11-29 | Omnivision Technologies, Inc. | Light sensing system and light sensor with polarizer |
| JP7569164B2 (ja) * | 2020-05-12 | 2024-10-17 | デクセリアルズ株式会社 | 偏光板及びその製造方法、ならびに光学機器 |
| US11217708B2 (en) * | 2020-06-02 | 2022-01-04 | Vanguard International Semiconductor Corporation | Optical sensor and method for forming the same |
| JPWO2021261295A1 (enExample) * | 2020-06-25 | 2021-12-30 | ||
| WO2022113735A1 (ja) * | 2020-11-24 | 2022-06-02 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| JP7595443B2 (ja) * | 2020-11-26 | 2024-12-06 | 株式会社ジャパンディスプレイ | 検出装置 |
| KR20220145442A (ko) | 2021-04-21 | 2022-10-31 | 삼성전자주식회사 | 이미지 센서 |
| US11699768B1 (en) * | 2022-03-29 | 2023-07-11 | Visera Technologies Company Ltd. | Patterned electrode structure for image sensor |
| JP2024110240A (ja) * | 2023-02-02 | 2024-08-15 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100310102B1 (ko) * | 1998-03-05 | 2001-12-17 | 윤종용 | 고체 컬러 이미지 소자 및 그의 제조 방법 |
| JP2006261638A (ja) | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
| EP1724844A2 (en) * | 2005-05-20 | 2006-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device, manufacturing method thereof and semiconductor device |
| JP2008177191A (ja) | 2007-01-16 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびそれを用いたカメラ |
| JP5282543B2 (ja) * | 2008-11-28 | 2013-09-04 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
| JP5454294B2 (ja) | 2010-03-29 | 2014-03-26 | 株式会社村田製作所 | 積層セラミックコンデンサの製造方法 |
| JP5651986B2 (ja) * | 2010-04-02 | 2015-01-14 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール |
| JP2012238632A (ja) * | 2011-05-10 | 2012-12-06 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、及び、電子機器 |
| CN109742098A (zh) * | 2012-11-22 | 2019-05-10 | 株式会社尼康 | 拍摄元件及拍摄单元 |
| CN105144384A (zh) * | 2013-04-23 | 2015-12-09 | 夏普株式会社 | 电路内置光电转换装置及其制造方法 |
| CN105518875B (zh) * | 2013-08-23 | 2017-06-13 | 夏普株式会社 | 光电转换装置及其制造方法 |
| FR3014243B1 (fr) * | 2013-12-04 | 2017-05-26 | St Microelectronics Sa | Procede de realisation d'un dispositif imageur integre a illumination face avant comportant au moins un filtre optique metallique, et dispositif correspondant |
| JP2016164956A (ja) | 2015-03-06 | 2016-09-08 | 株式会社東芝 | 固体撮像装置 |
| JP2017005111A (ja) * | 2015-06-10 | 2017-01-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP6566749B2 (ja) * | 2015-07-01 | 2019-08-28 | 株式会社ソニー・インタラクティブエンタテインメント | 撮像素子、イメージセンサ、および情報処理装置 |
| JP6957112B2 (ja) * | 2015-07-30 | 2021-11-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| JP6903396B2 (ja) * | 2015-10-14 | 2021-07-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び撮像装置 |
| JP6668036B2 (ja) * | 2015-10-14 | 2020-03-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及びその製造方法、並びに、撮像装置及びその製造方法 |
| JP2017078237A (ja) | 2015-10-20 | 2017-04-27 | 株式会社ミマキエンジニアリング | インクジェット印刷装置 |
| KR102725327B1 (ko) * | 2016-12-30 | 2024-11-01 | 엘지디스플레이 주식회사 | 안테나 일체형 편광판 및 이를 이용한 플렉서블 표시 장치 |
-
2017
- 2017-04-11 JP JP2017078237A patent/JP6833597B2/ja active Active
-
2018
- 2018-03-09 CN CN201880022868.8A patent/CN110546763B/zh active Active
- 2018-03-09 WO PCT/JP2018/009261 patent/WO2018190049A1/en not_active Ceased
- 2018-03-09 US US16/499,911 patent/US11004884B2/en active Active
- 2018-03-09 DE DE112018001963.2T patent/DE112018001963T5/de active Pending
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