CN110546763B - 成像器件和电子装置 - Google Patents

成像器件和电子装置 Download PDF

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Publication number
CN110546763B
CN110546763B CN201880022868.8A CN201880022868A CN110546763B CN 110546763 B CN110546763 B CN 110546763B CN 201880022868 A CN201880022868 A CN 201880022868A CN 110546763 B CN110546763 B CN 110546763B
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China
Prior art keywords
photoelectric conversion
light
imaging device
region
wire grid
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CN201880022868.8A
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English (en)
Chinese (zh)
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CN110546763A (zh
Inventor
町田贵志
秋山健太郎
山崎知洋
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026Wafer-level processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Polarising Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201880022868.8A 2017-04-11 2018-03-09 成像器件和电子装置 Active CN110546763B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-078237 2017-04-11
JP2017078237A JP6833597B2 (ja) 2017-04-11 2017-04-11 固体撮像装置
PCT/JP2018/009261 WO2018190049A1 (en) 2017-04-11 2018-03-09 Solid-state imaging apparatus

Publications (2)

Publication Number Publication Date
CN110546763A CN110546763A (zh) 2019-12-06
CN110546763B true CN110546763B (zh) 2024-08-13

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US (1) US11004884B2 (enExample)
JP (1) JP6833597B2 (enExample)
CN (1) CN110546763B (enExample)
DE (1) DE112018001963T5 (enExample)
WO (1) WO2018190049A1 (enExample)

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CN110574166A (zh) * 2019-07-30 2019-12-13 深圳市汇顶科技股份有限公司 图像传感器及其制造方法、芯片及手持装置
JP2021035015A (ja) * 2019-08-29 2021-03-01 株式会社東芝 固体撮像装置
CN112466895A (zh) * 2019-09-06 2021-03-09 世界先进积体电路股份有限公司 光学感测器及其形成方法
KR102704191B1 (ko) * 2019-10-23 2024-09-05 삼성전자주식회사 이미지 센서
EP4057352A4 (en) * 2019-11-08 2023-03-15 Sony Semiconductor Solutions Corporation SEMICONDUCTOR IMAGING ELEMENT AND IMAGING DEVICE
WO2021095613A1 (ja) * 2019-11-15 2021-05-20 Agc株式会社 光学フィルタおよびこれを用いた指紋検出装置
US11515437B2 (en) * 2019-12-04 2022-11-29 Omnivision Technologies, Inc. Light sensing system and light sensor with polarizer
JP7569164B2 (ja) * 2020-05-12 2024-10-17 デクセリアルズ株式会社 偏光板及びその製造方法、ならびに光学機器
US11217708B2 (en) * 2020-06-02 2022-01-04 Vanguard International Semiconductor Corporation Optical sensor and method for forming the same
JPWO2021261295A1 (enExample) * 2020-06-25 2021-12-30
WO2022113735A1 (ja) * 2020-11-24 2022-06-02 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7595443B2 (ja) * 2020-11-26 2024-12-06 株式会社ジャパンディスプレイ 検出装置
KR20220145442A (ko) 2021-04-21 2022-10-31 삼성전자주식회사 이미지 센서
US11699768B1 (en) * 2022-03-29 2023-07-11 Visera Technologies Company Ltd. Patterned electrode structure for image sensor
JP2024110240A (ja) * 2023-02-02 2024-08-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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Also Published As

Publication number Publication date
JP2018182022A (ja) 2018-11-15
CN110546763A (zh) 2019-12-06
US11004884B2 (en) 2021-05-11
US20200119073A1 (en) 2020-04-16
JP6833597B2 (ja) 2021-02-24
DE112018001963T5 (de) 2019-12-19
WO2018190049A1 (en) 2018-10-18

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