DE112018001963T5 - Festkörperbildgebungsvorrichtung - Google Patents

Festkörperbildgebungsvorrichtung Download PDF

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Publication number
DE112018001963T5
DE112018001963T5 DE112018001963.2T DE112018001963T DE112018001963T5 DE 112018001963 T5 DE112018001963 T5 DE 112018001963T5 DE 112018001963 T DE112018001963 T DE 112018001963T DE 112018001963 T5 DE112018001963 T5 DE 112018001963T5
Authority
DE
Germany
Prior art keywords
photoelectric conversion
light
imaging device
wire grid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112018001963.2T
Other languages
German (de)
English (en)
Inventor
Takashi Machida
Kentaro Akiyama
Tomohiro Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112018001963T5 publication Critical patent/DE112018001963T5/de
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Polarising Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112018001963.2T 2017-04-11 2018-03-09 Festkörperbildgebungsvorrichtung Pending DE112018001963T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017078237A JP6833597B2 (ja) 2017-04-11 2017-04-11 固体撮像装置
JP2017-078237 2017-04-11
PCT/JP2018/009261 WO2018190049A1 (en) 2017-04-11 2018-03-09 Solid-state imaging apparatus

Publications (1)

Publication Number Publication Date
DE112018001963T5 true DE112018001963T5 (de) 2019-12-19

Family

ID=61768375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112018001963.2T Pending DE112018001963T5 (de) 2017-04-11 2018-03-09 Festkörperbildgebungsvorrichtung

Country Status (5)

Country Link
US (1) US11004884B2 (enExample)
JP (1) JP6833597B2 (enExample)
CN (1) CN110546763B (enExample)
DE (1) DE112018001963T5 (enExample)
WO (1) WO2018190049A1 (enExample)

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CN108965704B (zh) * 2018-07-19 2020-01-31 维沃移动通信有限公司 一种图像传感器、移动终端及图像拍摄方法
WO2021016839A1 (zh) * 2019-07-30 2021-02-04 深圳市汇顶科技股份有限公司 图像传感器及其制造方法、芯片及手持装置
JP2021035015A (ja) * 2019-08-29 2021-03-01 株式会社東芝 固体撮像装置
CN112466895A (zh) * 2019-09-06 2021-03-09 世界先进积体电路股份有限公司 光学感测器及其形成方法
KR102704191B1 (ko) * 2019-10-23 2024-09-05 삼성전자주식회사 이미지 센서
WO2021090537A1 (ja) * 2019-11-08 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN114730028B (zh) * 2019-11-15 2024-09-17 Ａｇｃ株式会社 滤光片和使用了该滤光片的指纹检测装置
US11515437B2 (en) * 2019-12-04 2022-11-29 Omnivision Technologies, Inc. Light sensing system and light sensor with polarizer
JP7569164B2 (ja) * 2020-05-12 2024-10-17 デクセリアルズ株式会社 偏光板及びその製造方法、ならびに光学機器
US11217708B2 (en) * 2020-06-02 2022-01-04 Vanguard International Semiconductor Corporation Optical sensor and method for forming the same
JPWO2021261295A1 (enExample) * 2020-06-25 2021-12-30
WO2022113735A1 (ja) * 2020-11-24 2022-06-02 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP7595443B2 (ja) * 2020-11-26 2024-12-06 株式会社ジャパンディスプレイ 検出装置
KR20220145442A (ko) 2021-04-21 2022-10-31 삼성전자주식회사 이미지 센서
US11699768B1 (en) * 2022-03-29 2023-07-11 Visera Technologies Company Ltd. Patterned electrode structure for image sensor
JP2024110240A (ja) * 2023-02-02 2024-08-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2016164956A (ja) 2015-03-06 2016-09-08 株式会社東芝 固体撮像装置
JP2017078237A (ja) 2015-10-20 2017-04-27 株式会社ミマキエンジニアリング インクジェット印刷装置

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JP2006261638A (ja) 2005-02-21 2006-09-28 Sony Corp 固体撮像装置および固体撮像装置の駆動方法
EP1724844A2 (en) * 2005-05-20 2006-11-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device
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JP5454294B2 (ja) 2010-03-29 2014-03-26 株式会社村田製作所 積層セラミックコンデンサの製造方法
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JP2008177191A (ja) 2007-01-16 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP2016164956A (ja) 2015-03-06 2016-09-08 株式会社東芝 固体撮像装置
JP2017078237A (ja) 2015-10-20 2017-04-27 株式会社ミマキエンジニアリング インクジェット印刷装置

Also Published As

Publication number Publication date
CN110546763B (zh) 2024-08-13
US11004884B2 (en) 2021-05-11
JP6833597B2 (ja) 2021-02-24
JP2018182022A (ja) 2018-11-15
CN110546763A (zh) 2019-12-06
US20200119073A1 (en) 2020-04-16
WO2018190049A1 (en) 2018-10-18

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