JP2018142701A5 - - Google Patents

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JP2018142701A5
JP2018142701A5 JP2018027233A JP2018027233A JP2018142701A5 JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5 JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5
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Japan
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layer
substrate
features
stack
stack layer
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JP2018027233A
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Japanese (ja)
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JP7222606B2 (ja
JP2018142701A (ja
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Priority claimed from US15/441,381 external-priority patent/US10079152B1/en
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JP2018027233A 2017-02-24 2018-02-19 エッチングマスク構造を形成するための方法 Active JP7222606B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/441,381 US10079152B1 (en) 2017-02-24 2017-02-24 Method for forming planarized etch mask structures over existing topography
US15/441,381 2017-02-24

Publications (3)

Publication Number Publication Date
JP2018142701A JP2018142701A (ja) 2018-09-13
JP2018142701A5 true JP2018142701A5 (cg-RX-API-DMAC7.html) 2021-04-08
JP7222606B2 JP7222606B2 (ja) 2023-02-15

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JP2018027233A Active JP7222606B2 (ja) 2017-02-24 2018-02-19 エッチングマスク構造を形成するための方法

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US (1) US10079152B1 (cg-RX-API-DMAC7.html)
JP (1) JP7222606B2 (cg-RX-API-DMAC7.html)
KR (1) KR102253295B1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7403961B2 (ja) * 2019-03-19 2023-12-25 キオクシア株式会社 インプリント方法および半導体装置の製造方法
JP7336303B2 (ja) * 2019-07-31 2023-08-31 キヤノン株式会社 物品製造方法、膜形成方法、型製造方法、物品製造システム、情報処理方法およびプログラム
US11567401B2 (en) * 2019-12-20 2023-01-31 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
US11656546B2 (en) 2020-02-27 2023-05-23 Canon Kabushiki Kaisha Exposure apparatus for uniform light intensity and methods of using the same
US11349061B2 (en) * 2020-06-08 2022-05-31 International Business Machines Corporation Glassy carbon mask for immersion implant and selective laser anneal
US11443940B2 (en) * 2020-06-24 2022-09-13 Canon Kabushiki Kaisha Apparatus for uniform light intensity and methods of using the same
US20250013153A1 (en) * 2023-07-06 2025-01-09 Tokyo Electron Limited Method of preventing pattern collapse

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7790231B2 (en) 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
KR20050077751A (ko) * 2004-01-29 2005-08-03 아사히 가라스 가부시키가이샤 평판 디스플레이용 외부용기 및 그것을 사용한 평판디스플레이
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7998651B2 (en) 2006-05-15 2011-08-16 Asml Netherlands B.V. Imprint lithography
US11392037B2 (en) 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
US8071275B2 (en) 2008-04-10 2011-12-06 Lexmark International, Inc. Methods for planarizing unevenness on surface of wafer photoresist layer and wafers produced by the methods
WO2009151560A2 (en) 2008-06-09 2009-12-17 Board Of Regents, The University Of Texas System Adaptive nanotopography sculpting
KR101821705B1 (ko) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물
JP2013065725A (ja) * 2011-09-16 2013-04-11 Toshiba Corp パターン形成方法
KR102017360B1 (ko) 2012-01-19 2019-09-02 브레우어 사이언스 인코포레이션 아다만틸 기를 포함하는 비폴리머성 반사 방지 조성물
US9415418B2 (en) 2013-08-19 2016-08-16 Board Of Regents, The University Of Texas System Programmable deposition of thin films of a user-defined profile with nanometer scale accuracy
KR102351281B1 (ko) 2013-09-11 2022-01-14 제이에스알 가부시끼가이샤 다층 레지스트 프로세스용 무기 막 형성 조성물 및 패턴 형성 방법
JPWO2015114960A1 (ja) * 2014-01-30 2017-03-23 ソニー株式会社 表示装置および電子機器

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