JP2018085157A - 半導体メモリ管理装置 - Google Patents
半導体メモリ管理装置 Download PDFInfo
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- JP2018085157A JP2018085157A JP2016226634A JP2016226634A JP2018085157A JP 2018085157 A JP2018085157 A JP 2018085157A JP 2016226634 A JP2016226634 A JP 2016226634A JP 2016226634 A JP2016226634 A JP 2016226634A JP 2018085157 A JP2018085157 A JP 2018085157A
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- Prior art keywords
- refresh
- request
- semiconductor memory
- memory
- dram
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
Abstract
Description
揮発性の半導体メモリの各セルのリフレッシュ動作を間欠的に繰り返し実行する半導体メモリの管理装置において、
対象セルのリフレッシュ動作を要求するリフレッシュリクエストを出力するリクエスト発生部と、
前記リフレッシュリクエストで要求された対象セルを前記リフレッシュ動作させるリフレッシュ動作部とを備えており、
前記リクエスト発生部は、同一のセルに対する前記リフレッシュリクエストを、連続する2つの間隔が互いに異なる不等間隔をおいて間欠的に繰り返し出力する。
2 リフレッシュリクエスト発生装置(リクエスト発生部)
3 メモリインタフェース(I/F)(リフレッシュ動作部)
M0〜M3 メモリバンク
MU メモリユニット
REFRQ0〜REFRQ3 リフレッシュリクエスト
T1 リフレッシュ周期
T2〜T4 リフレッシュリクエスト出力周期
t1〜t4 リフレッシュ動作周期
Claims (3)
- 揮発性の半導体メモリの各セルのリフレッシュ動作を間欠的に繰り返し実行する半導体メモリの管理装置において、
対象セルのリフレッシュ動作を要求するリフレッシュリクエストを出力するリクエスト発生部と、
前記リフレッシュリクエストで要求された対象セルを前記リフレッシュ動作させるリフレッシュ動作部とを備えており、
前記リクエスト発生部は、同一のセルに対する前記リフレッシュリクエストを、連続する2つの間隔が互いに異なる不等間隔をおいて間欠的に繰り返し出力する、
半導体メモリ管理装置。 - 前記リクエスト発生部は、同一のセルに対する前記リフレッシュリクエストを、前記半導体メモリのスペックに応じて定められた許容周期の範囲内の間隔をおいて、間欠的に繰り返し出力する請求項1記載の半導体メモリ管理装置。
- 前記リクエスト発生部は、前記リフレッシュリクエストを前記半導体メモリのメモリバンク単位で出力し、前記リフレッシュ動作部は、前記リフレッシュリクエストで要求されたメモリバンクに属する対象セルを前記リフレッシュ動作させ、前記リクエスト発生部は、同一のメモリバンクに属する各セルに対する前記リフレッシュリクエストを、連続する2つの間隔が互いに異なる不等間隔をおいて間欠的に繰り返し出力すると共に、各メモリバンクに属する各セルに対する前記リフレッシュリクエストを、各メモリバンク間で互いにタイミングをずらして出力する請求項1又は2記載の半導体メモリ管理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016226634A JP6765941B2 (ja) | 2016-11-22 | 2016-11-22 | 半導体メモリ管理装置 |
US15/785,842 US10410711B2 (en) | 2016-11-22 | 2017-10-17 | Volatile semiconductor memory management device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2016226634A JP6765941B2 (ja) | 2016-11-22 | 2016-11-22 | 半導体メモリ管理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018085157A true JP2018085157A (ja) | 2018-05-31 |
JP6765941B2 JP6765941B2 (ja) | 2020-10-07 |
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JP2016226634A Active JP6765941B2 (ja) | 2016-11-22 | 2016-11-22 | 半導体メモリ管理装置 |
Country Status (2)
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US (1) | US10410711B2 (ja) |
JP (1) | JP6765941B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4167632B2 (ja) | 2004-07-16 | 2008-10-15 | エルピーダメモリ株式会社 | リフレッシュ周期発生回路及びそれを備えたdram |
US7590021B2 (en) * | 2007-07-26 | 2009-09-15 | Qualcomm Incorporated | System and method to reduce dynamic RAM power consumption via the use of valid data indicators |
KR101977665B1 (ko) | 2012-07-12 | 2019-08-28 | 삼성전자주식회사 | 리프레쉬 주기를 조절하는 반도체 메모리 장치, 메모리 시스템 및 그 동작방법 |
US9286964B2 (en) * | 2012-12-21 | 2016-03-15 | Intel Corporation | Method, apparatus and system for responding to a row hammer event |
KR20160023274A (ko) * | 2014-08-22 | 2016-03-03 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
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2016
- 2016-11-22 JP JP2016226634A patent/JP6765941B2/ja active Active
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2017
- 2017-10-17 US US15/785,842 patent/US10410711B2/en active Active
Also Published As
Publication number | Publication date |
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JP6765941B2 (ja) | 2020-10-07 |
US10410711B2 (en) | 2019-09-10 |
US20180144787A1 (en) | 2018-05-24 |
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