JP2018078241A - 光電変換素子、撮像素子および撮像装置 - Google Patents
光電変換素子、撮像素子および撮像装置 Download PDFInfo
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- JP2018078241A JP2018078241A JP2016220715A JP2016220715A JP2018078241A JP 2018078241 A JP2018078241 A JP 2018078241A JP 2016220715 A JP2016220715 A JP 2016220715A JP 2016220715 A JP2016220715 A JP 2016220715A JP 2018078241 A JP2018078241 A JP 2018078241A
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Abstract
【解決手段】下部電極5、光電変換層1、上部電極4をこの順に有し、下部電極と上部電極との間に電圧を印加する光電変換素子であって、光電変換層は、第一の有機化合物と、第二の有機化合物層とを有し、第一の有機化合物の酸化電位は、第二の有機化合物の酸化電位よりも小さく、下記式(A)で表されるΔEが、下記式(B)を満たすことを特徴とする光電変換素子を提供する。ΔE=第一の有機化合物の酸化電位−第二の有機化合物の還元電位(A)、ΔE≧1.79[V](B)
【選択図】図2
Description
ΔE=第一の有機化合物の酸化電位−第二の有機化合物の還元電位 (A)
ΔE≧1.79 [V] (B)
本実施形態においては、アノードとカソードとの間に有機化合物からなる光電変換層を有する光電変換素子を例に挙げて説明する。
ΔEは下記式(A)にて定義されるエネルギーギャップである。
ΔE=第一の有機化合物の酸化電位−第二の有機化合物の還元電位 (A)
またΔEは、下記式(B)を満たす。
ΔE≧1.79 [V] (B)
本実施形態に係る撮像素子は、複数の画素を有し、画素は、本発明に係る光電変換素子と、光電変換素子に接続されている読み出しトランジスタを有する。
酸化電位などの電気化学特性の評価は、サリクリックボルタンメトリー(CV)によって行うことができる。
本実施例では、ΔE≧1.79Vとなる第一の有機化合物と第二の有機化合物との組み合わせを用いて光電変換素子を作製した。作製した光電変換素子を用いて暗電流を測定した。
B:100pA/cm2以上1000pA/cm2未満
C:1000pA/cm2以上
Aは良好、B及びCは不良とした。
第一の有機化合物及び第二の有機化合物の組み合わせを表4に示す組み合わせとする以外は、実施例1と同様に光電変換素子を作製した。実施例1乃至15についての結果を次の表4に示す。
第一の有機化合物と第二の有機化合物の組み合わせを表5の組み合わせとする以外は実施例1と同様に光電変換素子を作製した。表5の化合物の組み合わせは、ΔE<1.79Vの組み合わせである。作製した光電変換素子を実施例1と同様の測定法で暗電流評価を行った。
実施例1において作製した光電変換素子を用いて、暗電流の温度依存性を測定した。図6は、実施例1の光電変換素子のアレニウスプロットである。縦軸は、60℃における暗電流値で規格化した暗電流値である。縦軸の目盛は常用対数である。横軸は絶対温度の逆数である。図6において60℃付近から高温側に向かって傾きの絶対値が大きくなる。この傾きから次式(5)に従い活性化エネルギーを求めた。
例示化合物1−3、1−7、1−13、1−21、1−23を第一の有機化合物とした以外は実施例1と同様に光電変換素子を作製し、実施例16と同様に暗電流の活性化エネルギーを求めた。図7は活性化エネルギー(Ea)とΔEとの関係を示した図である。図7より、ΔEが1.79V以上となることで、活性化エネルギーが大きくなることがわかる。これは、ΔEが1.79V以上である場合、熱励起による電荷発生確率が低下することを指す。
封止層にCVD法による窒化珪素層を用いた以外は、実施例1と同様にして光電変換素子を作製した。窒化珪素層は1μmの層厚で形成した。この素子に365nmのLED光を1W/cm2の強度で24h照射して耐久性を評価した。
2 正孔ブロック層
3 電子ブロック層
4 アノード電極
5 カソード電極
6 読み出し回路
7 保護層
8 カラーフィルタ
9 マイクロレンズ
Claims (12)
- 下部電極、光電変換層、上部電極をこの順に有し、前記下部電極と前記上部電極との間に電圧を印加する光電変換素子であって、
前記光電変換層は、第一の有機化合物と、第二の有機化合物層とを有し、
前記第一の有機化合物の酸化電位は、前記第二の有機化合物の酸化電位よりも小さく、
下記式(A)で表されるΔEが、下記式(B)を満たすことを特徴とする光電変換素子。
ΔE=第一の有機化合物の酸化電位−第二の有機化合物の還元電位 (A)
ΔE≧1.79 [V] (B) - 前記第一の有機化合物の酸化電位は0.96V以上であることを特徴とする請求項1に記載の光電変換素子。
- 前記第一の有機化合物の濃度は、前記第一の有機化合物と前記第二の有機化合物との合計を100重量%とした場合、35重量%未満であることを特徴とする請求項1または2に記載の光電変換素子。
- 前記第一の有機化合物が、硫黄原子を含む5員環を有する複素環基を含む有機化合物、フルオランテン骨格を有する有機化合物、金属錯体のいずれかであることを特徴とする請求項1乃至3のいずれか一項に記載の光電変換素子。
- 前記第二の有機化合物がフラーレン誘導体であることを特徴とする請求項1乃至4のいずれか一項に記載の光電変換素子。
- 前記フラーレン誘導体が、フラーレンC60であることを特徴とする請求項5に記載の光電変換素子。
- 前記上部電極の上に封止層を有することを特徴とする請求項1乃至6のいずれか一項に記載の光電変換素子。
- 複数の画素と、前記画素に接続されている信号処理回路とを有する撮像素子であって、
前記画素は、請求項1乃至7のいずれか一項に記載の光電変換素子と、前記光電変換素子に接続されている読み出し回路と、を有することを特徴とする撮像素子。 - 複数のレンズを有する光学部と、前記光学部を透過した光を受光する撮像素子とを有する撮像装置であって、
前記撮像素子は、請求項8に記載の撮像素子であることを特徴とする撮像装置。 - 外部からの信号を受信する受信部をさらに有することを特徴とする請求項9に記載の撮像装置。
- 前記信号は、撮像装置の撮像範囲、撮像の開始、撮像の終了の少なくともいずれかを制御する信号であることを特徴とする請求項10に記載の撮像装置。
- 外部に情報を送信する送信部をさらに有することを特徴とする請求項9乃至11のいずれか一項に記載の撮像装置。
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