JP2018067648A - 側面型光半導体装置 - Google Patents
側面型光半導体装置 Download PDFInfo
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- JP2018067648A JP2018067648A JP2016205787A JP2016205787A JP2018067648A JP 2018067648 A JP2018067648 A JP 2018067648A JP 2016205787 A JP2016205787 A JP 2016205787A JP 2016205787 A JP2016205787 A JP 2016205787A JP 2018067648 A JP2018067648 A JP 2018067648A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 230000003287 optical effect Effects 0.000 title claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 72
- 238000007747 plating Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000002345 surface coating layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- H01L31/02—Details
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- H01L31/02—Details
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
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- G02B6/4201—Packages, e.g. shape, construction, internal or external details
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Abstract
【解決手段】光半導体装置A1は、主面111および裏面112を有する基板1に配置される。基板1は、主面111から裏面112に向かって凹み、半導体受光素子7は第1凹部14及び第2凹部24にまたがって配置される。半導体受光素子7と第2凹部24との間には導光路18が与えられており、半導体受光素子7の導光部として用いられる。
【選択図】図2
Description
前記基板は前記厚さ方向に凹んだ第1凹部と、前記第1凹部の凹みよりもさらに前記裏面に向かって凹んだ第2凹部とを有する。前記第1凹部と前記第2凹部にまたがって半導体光素子が配置されるも前記半導体光素子と前記第2凹部との間には空洞部が与えられており、前記空洞部が前記半導体光素子の導光路として用いられる。
A1T 端部
LL 光
Yd 厚さ方向
1 基板
111 主面
112 裏面
14 第1凹部
143 第1凹部底面
144 第1凹部第2側面
18 導光路
19 裏面コート層
2 絶縁層
21 凹部内面絶縁部
22 主面絶縁部
24 第2凹部
241 第2凹部第1側面(連係部)
242 第2凹部底面
3 導電層
31 シード層
32 メッキ層
33 接合層
35 凹部内面導電部
36 主面導電部
38 端子部
381 柱状部
382 パッド部
4 遮光層
41 凹部内面遮光部
42 主面遮光部
6 封止樹脂部
7 半導体受光素子
71 本体
72 受光部
73 電極
Claims (20)
- 厚さ方向において互いに反対側を向く主面および裏面を有し、絶縁材料よりなる基板を備え、
前記基板は前記厚さ方向に凹んだ第1凹部と、前記第1凹部の凹みよりもさらに前記裏面に向かって凹んだ第2凹部とを有し、前記1凹部と前記第2凹部にまたがって半導体光素子が配置されるも前記半導体光素子と前記第2凹部との間には空洞部が与えられており、前記空洞部が前記半導体光素子の導光路として用いられる側面型光半導体装置。 - 前記絶縁材料は半導体材料である請求項1に記載の側面型光半導体装置。
- 前記半導体材料は、シリコン(Si)または炭化シリコン(SiC)である請求項2に記載の側面型光半導体装置。
- 前記第1凹部及び前記第2凹部は連係部を介してつながっている請求項1に記載の側面型光半導体装置。
- 前記連係部には前記半導体光素子から放射または前記半導体光素子に入射される光を前記導光路に導く傾斜部が形成されている請求項4に記載の側面型光半導体装置。
- 前記第1凹部、前記第2凹部、及び前記連係部は異方性または等方性エッチングで形成される請求項5に記載の側面型光半導体装置。
- 前記空洞部は透明樹脂で覆われている請求項1に記載の側面型光半導体装置。
- 前記側面型光半導体装置は、
前記半導体光素子に導通する導電層と、
前記導電層の少なくとも一部と前記基板との間に介在する絶縁層を備える請求項1に記載の側面型光半導体装置。 - 前記凹部に充填された部分を有する封止樹脂部を備える、請求項8に記載の側面型光半導体装置。
- 前記導電層は、前記主面に形成された主面導電部を有する、請求項9に記載の側面型光半導体装置。
- 前記主面導電部に接し、且つ遮光樹脂部を貫通する柱状部を各々が有する複数の端子部を備える、請求項10に記載の側面型光半導体装置。
- 前記柱状部の端面と前記遮光樹脂部の端面とは、互いに面一である、請求項11に記載の側面型光半導体装置。
- 前記端子部は、前記柱状部に繋がり、且つ前記遮光樹脂部から露出するパッド部を有する、請求項11または12に記載の側面型光半導体装置。
- 前記基板と前記絶縁層の少なくとも一部との間に介在し、前記光半導体素子が発光または受光する光を遮光する遮光層を備える請求項13に記載の側面型光半導体装置。
- 前記遮光層は、金属と前記基板を構成する半導体との化合物からなる、請求項14に記載の側面型光半導体装置。
- 前記遮光層は、チタン(Ti)とシリコン(Si)との化合物からなる、請求項15に記載の側面型光半導体装置。
- 前記遮光層は、金属からなる、請求項15に記載の側面型光半導体装置。
- 前記遮光層は、チタン(Ti)からなる、請求項17に記載の側面型光半導体装置。
- 前記遮光層は、前記凹部に形成された凹部内面遮光部を有する、請求項14から18のいずれか一項に記載の側面型光半導体装置。
- 前記基板の前記裏面を覆う裏面コート層を備える、請求項13に記載の側面型光半導体装置。
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JP2016205787A JP6825874B2 (ja) | 2016-10-20 | 2016-10-20 | 側面型光半導体装置 |
US15/784,243 US10032970B2 (en) | 2016-10-20 | 2017-10-16 | Side surface type optical semiconductor device |
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JP2016205787A JP6825874B2 (ja) | 2016-10-20 | 2016-10-20 | 側面型光半導体装置 |
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Citations (4)
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US20030147592A1 (en) * | 2002-02-04 | 2003-08-07 | Dong-Wook Kim | Optical module used in high frequency band optical communication system |
JP2014206573A (ja) * | 2013-04-11 | 2014-10-30 | パナソニック株式会社 | 光電変換サブマウント基板 |
JP2015222742A (ja) * | 2014-05-22 | 2015-12-10 | パナソニックIpマネジメント株式会社 | 基板構造体 |
JP2016152260A (ja) * | 2015-02-16 | 2016-08-22 | ローム株式会社 | 電子装置 |
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JP3537881B2 (ja) * | 1994-03-29 | 2004-06-14 | 株式会社リコー | Ledアレイヘッド |
DK0987769T3 (da) * | 1998-09-18 | 2003-07-14 | Sumitomo Electric Industries | Fotodiodemodul |
JP2000196153A (ja) | 1998-12-25 | 2000-07-14 | Rohm Co Ltd | チップ電子部品およびその製造方法 |
JP3721935B2 (ja) * | 2000-04-19 | 2005-11-30 | 住友電気工業株式会社 | 光学装置 |
WO2002075785A2 (en) * | 2001-03-16 | 2002-09-26 | Peregrine Semiconductor Corporation | Coupled optical and optoelectronic devices, and method of making the same |
US6944377B2 (en) * | 2002-03-15 | 2005-09-13 | Hitachi Maxell, Ltd. | Optical communication device and laminated optical communication module |
JP2009224376A (ja) | 2008-03-13 | 2009-10-01 | Toshiba Discrete Technology Kk | 側面型発光装置及びその製造方法 |
US9201200B2 (en) * | 2012-07-26 | 2015-12-01 | Tyco Electronics Corporation | Optical assembly with diffractive optical element |
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US20030147592A1 (en) * | 2002-02-04 | 2003-08-07 | Dong-Wook Kim | Optical module used in high frequency band optical communication system |
JP2014206573A (ja) * | 2013-04-11 | 2014-10-30 | パナソニック株式会社 | 光電変換サブマウント基板 |
JP2015222742A (ja) * | 2014-05-22 | 2015-12-10 | パナソニックIpマネジメント株式会社 | 基板構造体 |
JP2016152260A (ja) * | 2015-02-16 | 2016-08-22 | ローム株式会社 | 電子装置 |
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