JP2018065159A - Laser lift-off apparatus and laser lift-off method - Google Patents
Laser lift-off apparatus and laser lift-off method Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
Abstract
Description
本発明は、透明な基板上に形成された被剥離層を基板から剥離するレーザリフトオフ装置に関し、特に被剥離層に汚染物質が付着するのを抑制して剥離し得るようにするレーザリフトオフ装置及びレーザリフトオフ方法に係るものである。 The present invention relates to a laser lift-off device that peels off a layer to be peeled formed on a transparent substrate from the substrate, and more particularly, a laser lift-off device that enables peeling by suppressing the adhesion of contaminants to the peeled layer and This relates to the laser lift-off method.
従来のレーザリフトオフ装置は、非晶質シリコンよりなる光吸収層と金属薄膜よりなる反射層との積層体である分離層及び被剥離層が積層形成された透光性の基板の裏面側からレーザ光を照射し、光吸収層にアブレーションを起こさせて、分離層に剥離を生ぜしめ、被剥離層を基板から離脱させるものとなっていた（例えば、特許文献１参照）。 A conventional laser lift-off device uses a laser from the back side of a translucent substrate on which a separation layer and a layer to be peeled are formed by laminating a light absorption layer made of amorphous silicon and a reflection layer made of a metal thin film. Light was irradiated to cause ablation in the light absorption layer, causing separation in the separation layer, and separating the layer to be separated from the substrate (for example, see Patent Document 1).
この場合、レーザ光の照射強度は、光吸収層にアブレーションを生じさせるのに必要な剥離閾値以上であり、光吸収層の温度上昇により大量の汚染物質が発生する汚染閾値以下となるように制御する必要がある。 In this case, the irradiation intensity of the laser beam is controlled so as to be equal to or higher than the separation threshold necessary for causing ablation in the light absorption layer, and to be equal to or lower than the contamination threshold at which a large amount of contaminants are generated by the temperature increase of the light absorption layer. There is a need to.
しかし、このような従来のレーザリフトオフ装置においては、剥離閾値を超える大きさのレーザ光が一度に照射されるため、光吸収層に急激な温度上昇が生じて一時に大量の気体が発生し、その結果、光吸収層の一部も基板から剥離して被剥離層に付着し、被剥離層を汚染させるおそれがあった。このため、従来のレーザリフトオフ装置においては、上記汚染閾値が低くなっていた。 However, in such a conventional laser lift-off device, since a laser beam having a size exceeding the peeling threshold is irradiated at once, a rapid temperature rise occurs in the light absorption layer, and a large amount of gas is generated at one time. As a result, a part of the light absorption layer may be peeled off from the substrate and attached to the peeled layer, thereby contaminating the peeled layer. For this reason, in the conventional laser lift-off apparatus, the said contamination threshold value was low.
したがって、従来のレーザリフトオフ装置においては、レーザ光の照射強度における剥離閾値から汚染閾値間のプロセスマージンが狭くなり、被剥離層の汚染を抑制するのが難しいという問題があった。 Therefore, the conventional laser lift-off apparatus has a problem that the process margin between the peeling threshold value and the contamination threshold value in the irradiation intensity of the laser beam becomes narrow, and it is difficult to suppress contamination of the peeled layer.
そこで、本発明は、このような問題点に対処し、被剥離層に汚染物質が付着するのを抑制して剥離し得るようにするレーザリフトオフ装置及びレーザリフトオフ方法を提供することを目的とする。 In view of the above, an object of the present invention is to provide a laser lift-off device and a laser lift-off method that can cope with such problems and suppress the adhesion of a contaminant to the layer to be peeled off so as to be peeled off. .
上記目的を達成するために、本発明によるレーザリフトオフ装置は、透明な基板と、レーザ光を照射するレーザ照射光学系とを相対的に移動しながら、基板表面の被照射領域に前記基板の裏面側からレーザ光を照射し、前記基板の表面に形成された被剥離層を剥離するレーザリフトオフ装置であって、前記レーザ照射光学系は、前記被照射領域に対して、照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射に続いて強度の大きいレーザ光を照射可能に構成されたものである。 In order to achieve the above object, a laser lift-off device according to the present invention moves a transparent substrate and a laser irradiation optical system for irradiating laser light while moving the back surface of the substrate to an irradiated region on the substrate surface. A laser lift-off device for irradiating a laser beam from the side and peeling a layer to be peeled formed on the surface of the substrate, wherein the laser irradiation optical system is a laser beam having a different irradiation intensity with respect to the irradiated region. Among these, it is configured to be able to irradiate a laser beam having a high intensity following irradiation of a laser beam having a low intensity.
また、本発明によるレーザリフトオフ方法は、透明な基板の裏面側からレーザ照射光学系によりレーザ光を照射して前記基板上に形成された被剥離層を前記基板から剥離するレーザリフトオフ方法であって、前記基板を前記レーザ照射光学系に対して相対的に移動しながら、基板表面の全被照射領域に対して照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射に続いて強度の大きいレーザ光を照射するものである。 The laser lift-off method according to the present invention is a laser lift-off method in which a layer to be peeled formed on the substrate is peeled off from the substrate by irradiating laser light from the back side of the transparent substrate with a laser irradiation optical system. While the substrate is moved relative to the laser irradiation optical system, the intensity of the laser beam having a lower intensity is irradiated following the irradiation of the laser beam having a different intensity with respect to the entire irradiated region of the substrate surface. Irradiates a large laser beam.
本発明によれば、基板表面の全被照射領域に対して照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射による予備加熱に続いて強度の大きいレーザ光の照射による本加熱をするようにしているので、被照射領域の急激な温度上昇を抑えることができる。したがって、汚染物質が一気に発生して被剥離層を汚染するのを抑制することができる。 According to the present invention, of the laser beams having different irradiation intensities over the entire irradiated region on the substrate surface, the main heating is performed by the irradiation of the laser beam having the high intensity following the preliminary heating by the irradiation of the laser beam having the low intensity. As a result, a rapid temperature increase in the irradiated region can be suppressed. Therefore, it can suppress that a pollutant generate | occur | produces at a stretch and contaminates a to-be-separated layer.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるレーザリフトオフ装置の第１の実施形態を示す概略構成図である。このレーザリフトオフ装置は、透明な基板上に形成された被剥離層を基板から剥離するもので、搬送手段１と、レーザ照射光学系２と、を備えて構成されている。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic configuration diagram showing a first embodiment of a laser lift-off device according to the present invention. This laser lift-off device peels a layer to be peeled formed on a transparent substrate from the substrate, and includes a transport means 1 and a laser irradiation optical system 2.
なお、ここでは、図２に示すように、ガラス（石英を含む）又はサファイア等の、可視光を透過する透明な基板３の表面と被剥離層４との間に、レーザ光の照射により気体を発生する犠牲層５として、例えば水素を含有するアモルファスシリコン膜が設けられている場合について説明する。 Here, as shown in FIG. 2, a gas is irradiated between the surface of the transparent substrate 3 that transmits visible light, such as glass (including quartz) or sapphire, and the layer to be peeled 4 by laser light irradiation. For example, a case where an amorphous silicon film containing hydrogen is provided as the sacrificial layer 5 that generates hydrogen will be described.
上記搬送手段１は、表面に被剥離層４が形成された透明な基板３を保持して一方向（矢印Ａ方向）に一定速度で搬送するものであり、公知の基板搬送機構を適用することができる。ここでは、上記搬送手段１は、上記被剥離層４側が下側となるように基板３を保持して搬送するものである場合について説明する。なお、被剥離層４が上側となるようにして基板３を搬送する場合には、後述のレーザ照射光学系２は、搬送手段１の搬送面の下側に配置される。 The transport means 1 holds a transparent substrate 3 having a peeled layer 4 formed on the surface and transports it in one direction (arrow A direction) at a constant speed, and applies a known substrate transport mechanism. Can do. Here, the case where the said conveyance means 1 hold | maintains and conveys the board | substrate 3 so that the said to-be-separated layer 4 side may become lower side is demonstrated. When the substrate 3 is transported so that the layer to be peeled 4 is on the upper side, a laser irradiation optical system 2 described later is disposed below the transport surface of the transport means 1.
上記搬送手段１の搬送面の上方には、レーザ照射光学系２が設けられている。このレーザ照射光学系２は、搬送手段１によって搬送中の基板３に対して該基板３の裏面側からレーザ光を照射するものであり、照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射に続いて強度の大きいレーザ光を照射可能に構成されている。 A laser irradiation optical system 2 is provided above the conveying surface of the conveying means 1. The laser irradiation optical system 2 irradiates the substrate 3 being conveyed by the conveying means 1 with laser light from the back side of the substrate 3. It is configured to be capable of irradiating a laser beam having a high intensity following the irradiation.
詳細には、レーザ照射光学系２は、レーザ光源６と、カップリング光学系７と、遮光マスク８と、対物レンズ９とを、レーザ光の進行方向上流から下流に向かってこの順に配置して構成されている。 Specifically, the laser irradiation optical system 2 includes a laser light source 6, a coupling optical system 7, a light shielding mask 8, and an objective lens 9 arranged in this order from upstream to downstream in the laser beam traveling direction. It is configured.
上記レーザ光源６は、上記犠牲層５の温度を上昇させるのに十分なエネルギーを有する、例えば波長が１００ｎｍ〜１２００ｎｍのうちから選択された所望の波長のレーザ光をパルス発光するもので、エキシマレーザ、Ｎｄ−ＹＡＧレーザ、Ａｒレーザ等である。 The laser light source 6 has a sufficient energy to raise the temperature of the sacrificial layer 5 and emits a laser beam having a desired wavelength selected from, for example, a wavelength of 100 nm to 1200 nm. Nd-YAG laser, Ar laser, and the like.
上記カップリング光学系７は、レーザ光源６から放出されたレーザ光のビーム径を拡張すると共に、ビーム径内の輝度分布を均一にした後、後述の遮光マスク８に平行光を照射するようにしたもので、ビームエキスパンダ、フォトインテグレータ及びコンデンサレンズを含むものである。なお、コンデンサレンズは、直交２軸方向に集光する球面レンズであっても、１軸方向に集光するシリンドリカルレンズであってもよい。シリンドリカルレンズの場合には、レンズは、その円柱軸が上記基板搬送方向と交差するように配置される。 The coupling optical system 7 expands the beam diameter of the laser light emitted from the laser light source 6, makes the luminance distribution within the beam diameter uniform, and then irradiates the light shielding mask 8 described later with parallel light. It includes a beam expander, a photo integrator and a condenser lens. The condenser lens may be a spherical lens that condenses in the orthogonal biaxial direction or a cylindrical lens that condenses in the uniaxial direction. In the case of a cylindrical lens, the lens is arranged so that its cylindrical axis intersects the substrate transport direction.
上記遮光マスク８は、本発明の技術的特徴を成す部分であり、光透過率の異なる少なくとも二つの領域（本実施形態においては、図３に示すように、第１の領域１０ａと第２の領域１０ｂとを有する場合について説明する。）を基板搬送方向に有する開口窓１０を設けたもので、開口窓１０の光透過率が基板搬送方向上流側の第１の領域１０ａよりも下流側の第２の領域１０ｂの方が低くなるように形成されている。 The light shielding mask 8 is a part that constitutes the technical feature of the present invention, and includes at least two regions having different light transmittances (in this embodiment, as shown in FIG. 3, the first region 10a and the second region The area 10b is provided with an opening window 10 having the substrate 10 in the substrate conveyance direction, and the light transmittance of the opening window 10 is lower than the first area 10a on the upstream side in the substrate conveyance direction. The second region 10b is formed to be lower.
詳細には、上記遮光マスク８は、図３（ｂ）に示すように石英等のレーザ光を透過するガラス基板１１上に設けたクロム（Ｃｒ）等の遮光膜１２に、同図（ａ）に示すように、例えば基板搬送方向（矢印Ａ方向）と交差する方向に長軸を有する矩形状の開口窓１０を設けたもので、第１の領域１０ａは完全に開口し、第２の領域１０ｂは第１の領域１０ａに対して所定の減光率で減光処理が施されている。即ち、この減光処理は、上記開口窓１０の第１の領域１０ａを透過し、基板表面の被照射領域（犠牲層５）に照射するレーザ光の強度が剥離閾値以上で、汚染閾値未満に設定されているとき、第２の領域１０ｂを透過して被照射領域に照射するレーザ光の強度が剥離閾値未満となるように施される。 Specifically, as shown in FIG. 3B, the light shielding mask 8 is formed on a light shielding film 12 such as chromium (Cr) provided on a glass substrate 11 that transmits laser light such as quartz. As shown in FIG. 4, for example, a rectangular opening window 10 having a long axis in a direction crossing the substrate transport direction (arrow A direction) is provided, and the first region 10a is completely opened, and the second region In 10b, the first region 10a is subjected to a light reduction process at a predetermined light reduction rate. That is, in this dimming treatment, the intensity of the laser beam that passes through the first region 10a of the aperture window 10 and irradiates the irradiated region (sacrificial layer 5) on the substrate surface is equal to or higher than the peeling threshold and lower than the contamination threshold. When set, the intensity of the laser beam that passes through the second region 10b and irradiates the irradiated region is applied to be less than the peeling threshold.
より詳細には、第２の領域１０ｂを透過するレーザ光の強度は、剥離閾値未満で且つ犠牲層５から該犠牲層５に含まれる気体の一部を放出可能な値に設定される。この設定は、適宜、実験により適切な値に決定される。 More specifically, the intensity of the laser light transmitted through the second region 10b is set to a value that is less than the peeling threshold and that allows a part of the gas contained in the sacrificial layer 5 to be released from the sacrificial layer 5. This setting is appropriately determined to an appropriate value by experiment.
第２の領域１０ｂの減光処理は、図４（ａ）に示すように、基板搬送方向下流から上流に向かって光透過率が漸増するように変化させて形成してもよく、同図（ｂ）に示すように、階段状に変化させて形成してもよい。 As shown in FIG. 4A, the dimming process of the second region 10b may be formed by changing the light transmittance so as to gradually increase from the downstream in the substrate transport direction. As shown in b), it may be formed in steps.
上記減光処理の具体例は、図４（ａ）に示すように、光透過率を漸増するように変化させるときには、第２の領域１０ｂ内の遮光膜１２に設けた、例えばスリット幅を第１の領域１０ａから離れるに従って徐々に狭くなるように変化させて形成するとよい。又は、第２の領域１０ｂ内のストライプ状又は円形状の遮光膜１２の配置面積を第１の領域１０ａから離れるに従って徐々に広くなるように変化させて形成してもよく、公知の技術を適用することができる。 As shown in FIG. 4A, a specific example of the dimming process is that when the light transmittance is changed so as to increase gradually, for example, the slit width provided in the light shielding film 12 in the second region 10b is set to the first width. It is preferable that the first region 10a is formed so as to be gradually narrowed away from the region 10a. Alternatively, the arrangement area of the stripe-shaped or circular light-shielding film 12 in the second region 10b may be formed so as to gradually increase as the distance from the first region 10a increases, and a known technique is applied. can do.
また、図４（ｂ）に示すように、光透過率を階段状に変化させるときには、所定の光透過率が得られるように、遮光膜１２を所定の厚みに形成すればよい。 Further, as shown in FIG. 4B, when the light transmittance is changed stepwise, the light shielding film 12 may be formed with a predetermined thickness so as to obtain a predetermined light transmittance.
なお、第２の領域１ｂの減光処理は、第１の領域１ａを透過したレーザ光の照射エネルギーと第２の領域１ｂを透過したレーザ光の照射エネルギーとが同じになるよう設定して行ってもよい。 The dimming process for the second region 1b is performed by setting the irradiation energy of the laser light transmitted through the first region 1a and the irradiation energy of the laser light transmitted through the second region 1b to be the same. May be.
上記対物レンズ９は、上記遮光マスク８の開口窓１０を被照射領域としての上記犠牲層５に反転結像するものであり、直交２軸方向に集光する球面レンズであっても、１軸方向に集光するシリンドリカルレンズであってもよい。シリンドリカルレンズの場合には、レンズは、その円柱軸が上記基板搬送方向と交差するように配置される。 The objective lens 9 reversely forms an image of the aperture window 10 of the light shielding mask 8 on the sacrificial layer 5 as an irradiated region. It may be a cylindrical lens that collects light in the direction. In the case of a cylindrical lens, the lens is arranged so that its cylindrical axis intersects the substrate transport direction.
このように、上記遮光マスク８の開口窓１０が対物レンズ９により犠牲層５に反転結像されるから、図４（ａ）に示すように、第２の領域１０ｂの光透過率が基板搬送方向下流側から上流側に向かって漸増するものである場合には、同図（ａ）の右側に示すように、第２の領域１０ｂに対応して犠牲層５に照射されるレーザ光の照射強度は、基板搬送方向上流側から下流側に向かって漸増するものとなる。 Thus, since the aperture window 10 of the light shielding mask 8 is inverted and imaged on the sacrificial layer 5 by the objective lens 9, as shown in FIG. 4A, the light transmittance of the second region 10b is transferred to the substrate. In the case of increasing gradually from the downstream side toward the upstream side, as shown on the right side of FIG. 5A, the irradiation of the laser beam applied to the sacrificial layer 5 corresponding to the second region 10b. The strength gradually increases from the upstream side to the downstream side in the substrate transport direction.
また、図４（ｂ）に示すように開口窓１０の光透過率が、階段状に変化するものである場合には、同図（ｂ）の右側に示すように、開口窓１０に対応して犠牲層５に照射されるレーザ光の照射強度は、基板搬送方向上流側の方が下流側よりも弱いものとなる。 Further, when the light transmittance of the opening window 10 changes in a stepped manner as shown in FIG. 4B, it corresponds to the opening window 10 as shown on the right side of FIG. Thus, the irradiation intensity of the laser beam applied to the sacrificial layer 5 is weaker on the upstream side in the substrate transport direction than on the downstream side.
次に、このように構成されたレーザリフトオフ装置の動作、及び本装置を用いたレーザリフトオフ方法について説明する。
基板表面に犠牲層５及び被剥離層４をこの順に積層形成した透明な基板３を基板表面が搬送手段１の搬送面側となるように搬送手段１に保持して、基板３を図１に示す矢印Ａ方向に搬送を開始する。なお、ここでは、犠牲層５が水素を含有するアモルファスシリコン膜である場合について説明する。
Next, the operation of the laser lift-off device configured as described above and the laser lift-off method using this device will be described.
A transparent substrate 3 in which a sacrificial layer 5 and a layer to be peeled 4 are laminated in this order on the substrate surface is held by the transport means 1 so that the substrate surface is on the transport surface side of the transport means 1, and the substrate 3 is shown in FIG. The conveyance is started in the arrow A direction shown. Here, the case where the sacrificial layer 5 is an amorphous silicon film containing hydrogen will be described.
次に、レーザ照射光学系２に対して基板搬送方向上流側の位置で、図示省略の撮像手段により、上記基板３を裏面側から透過して基板表面の被照射領域（犠牲層５）を撮影し、その撮影画像に基づいて図示省略の制御手段で、上記被照射領域の基板搬送方向下流側の端部を検出する。 Next, at an upstream position in the substrate transport direction with respect to the laser irradiation optical system 2, an imaged means (not shown) transmits the substrate 3 from the back side and photographs the irradiated region (sacrificial layer 5) on the substrate surface. Then, based on the photographed image, the control unit (not shown) detects the end of the irradiated region on the downstream side in the substrate transport direction.
被照射領域の基板搬送方向下流側の端部が検出されると、それをトリガーとして制御手段においては、基板３の移動距離が演算される。そして、基板３が予め定められた所定距離だけ移動して上記被照射領域の基板搬送方向下流側の端部が、図５（ｂ）に示すように遮光マスク８に設けられた開口窓１０の第２の領域１０ｂの結像にて、基板搬送方向上流側端部（同図（ａ）に示す予備加熱領域の基板搬送方向上流側端部に相当）に合致すると、レーザ光源６が所定の時間間隔でパルス発光し、レーザ光源６からレーザ光が放出される。 When the end of the irradiated region on the downstream side in the substrate transport direction is detected, the movement distance of the substrate 3 is calculated in the control means using this as a trigger. Then, the substrate 3 moves by a predetermined distance, and the end of the irradiated region on the downstream side in the substrate transport direction is an opening window 10 provided in the light shielding mask 8 as shown in FIG. When the image of the second region 10b matches the upstream end portion in the substrate transport direction (corresponding to the upstream end portion in the substrate transport direction of the preheating region shown in FIG. 5A), the laser light source 6 Pulse light is emitted at time intervals, and laser light is emitted from the laser light source 6.
レーザ光は、カップリング光学系７によりビーム径が拡大され、強度分布が均一化された後、平行光とされて遮光マスク８に照射する。 The laser light is expanded in beam diameter by the coupling optical system 7 and the intensity distribution is made uniform, and then is converted into parallel light and applied to the light shielding mask 8.
遮光マスク８に照射したレーザ光は、遮光マスク８の開口窓１０によりビームの断面形状が基板搬送方向と交差する方向に長軸を有するストライプ状に整形されて遮光マスク８を射出する。そして、遮光マスク８を射出したレーザ光は、対物レンズ９により基板表面の被照射領域（犠牲層５）に集光されるように透明な基板３を裏面側から透過する。この場合、遮光マスク８を射出したレーザ光は、開口窓１０の減光処理が施された第２の領域１０ｂを通過した部分の強度が第１の領域１０ａを通過した部分の強度よりも小さくなる。 The laser light applied to the light shielding mask 8 is emitted into the light shielding mask 8 after the cross-sectional shape of the beam is shaped into a stripe shape having a major axis in a direction intersecting the substrate transport direction by the opening window 10 of the light shielding mask 8. Then, the laser light emitted from the light shielding mask 8 passes through the transparent substrate 3 from the back surface side so as to be condensed by the objective lens 9 onto the irradiated region (sacrificial layer 5) on the substrate surface. In this case, the intensity of the portion of the laser light emitted from the light shielding mask 8 that has passed through the second region 10b that has been subjected to the dimming process of the aperture window 10 is smaller than the strength of the portion that has passed through the first region 10a. Become.
基板３は一定の速度で搬送されており、レーザ光源６は、所定の時間間隔でパルス発光している。この場合、基板３の搬送速度は、少なくとも１回のパルス発光時間内に、基板３が遮光マスク８の開口窓１０の結像において、第２の領域１０ｂに対応した部分（図５（ａ）に示す予備加熱領域）の基板搬送方向の幅と同寸法だけ移動するように設定されている。 The substrate 3 is transported at a constant speed, and the laser light source 6 emits pulses at predetermined time intervals. In this case, the conveyance speed of the substrate 3 is a portion corresponding to the second region 10b in the imaging of the opening window 10 of the light shielding mask 8 within the pulse emission time of at least one time (FIG. 5A). Is set so as to move by the same dimension as the width in the substrate transport direction.
図５は、レーザ光源６が１回発光する間に、基板３が上記予備加熱領域の基板搬送方向の幅と同寸法だけ移動する場合を示している。図５（ａ）は被照射領域に照射されるレーザ光の強度分布を示し、同図（ｂ）〜（ｄ）は、基板３が搬送されることにより時間変化する被照射領域の位置を示している。 FIG. 5 shows a case where the substrate 3 moves by the same dimension as the width of the preheating region in the substrate transport direction while the laser light source 6 emits light once. FIG. 5A shows the intensity distribution of the laser light applied to the irradiated region, and FIGS. 5B to 5D show the position of the irradiated region that changes with time as the substrate 3 is transported. ing.
図５（ｂ）に示すように、基板３の被照射領域（犠牲層５）の基板搬送方向下流側端部が予備加熱領域の基板搬送方向上流側端部に合致すると、レーザ光源６が１回目のレーザ発光をする。この１回目のレーザ発光時間内に、基板３は、予備加熱領域の基板搬送方向の幅と同じ寸法だけ移動する。したがって、被照射領域は、同図（ｃ）に示すように基板搬送方向下流側の端部領域５ａが開口窓１０の第２の領域１０ｂを通過したレーザ光により照射される。この場合、第２の領域１０ｂを通過するレーザ光の照射強度は、剥離閾値未満に設定されているため、被照射領域の上記端部領域５ａの犠牲層５は、予備的に加熱されるだけで剥離しない。このとき、図６に破線Ｉで示すように、犠牲層５から該犠牲層５に含有される気体の一部が放出される。なお、この場合、端部領域５ａには、１回目（１ショット目）のレーザ光の照射がなされるから、図６において、ｎはゼロとなる。 As shown in FIG. 5B, when the downstream end of the irradiated region (sacrificial layer 5) of the substrate 3 matches the upstream end of the preheating region in the substrate transport direction, the laser light source 6 becomes 1. The second laser is emitted. Within this first laser emission time, the substrate 3 moves by the same dimension as the width of the preheating region in the substrate transport direction. Therefore, the irradiated region is irradiated with the laser beam that has passed through the second region 10b of the opening window 10 in the end region 5a on the downstream side in the substrate transport direction, as shown in FIG. In this case, since the irradiation intensity of the laser light passing through the second region 10b is set to be less than the peeling threshold, the sacrificial layer 5 in the end region 5a of the irradiated region is only preliminarily heated. Does not peel off. At this time, as indicated by a broken line I in FIG. 6, part of the gas contained in the sacrificial layer 5 is released from the sacrificial layer 5. In this case, since the end region 5a is irradiated with the first (first shot) laser beam, n is zero in FIG.
引き続いて、基板３が搬送され、図５（ｄ）に示すように被照射領域が予備加熱領域の基板搬送方向の幅と同じ寸法だけ移動すると、レーザ光源６が２回目（２ショット目）のパルス発光をする。これにより、被照射領域の上記端部領域５ａが開口窓１０の第１の領域１０ａを通過したレーザ光により照射される。即ち、これは、被照射領域の上記端部領域５ａが図５（ａ）に示す加熱領域内に位置した状態である。この場合、第１の領域１０ａを通過するレーザ光の照射強度は、剥離閾値以上で、汚染閾値未満に設定されているため、被照射領域の上記端部領域５ａの犠牲層５が本加熱され、該犠牲層５に含有される気体の残りの部分、若しくは残りの一部が放出され、同端部領域５ａの犠牲層５が剥離可能となる。また、被照射領域の上記端部領域５ａに続く後続領域５ｂは、上記第２の領域１０ｂを通過した２回目のパルス発光のレーザ光により１回目の照射を受け、予備加熱される。 Subsequently, when the substrate 3 is transported and the irradiated region moves by the same dimension as the width of the preheating region in the substrate transport direction as shown in FIG. 5D, the laser light source 6 is moved for the second time (second shot). Pulse light emission. Thereby, the said edge part area | region 5a of a to-be-irradiated area | region is irradiated with the laser beam which passed the 1st area | region 10a of the opening window 10. FIG. That is, this is a state in which the end region 5a of the irradiated region is located in the heating region shown in FIG. In this case, since the irradiation intensity of the laser light passing through the first region 10a is set to be equal to or higher than the peeling threshold and lower than the contamination threshold, the sacrificial layer 5 in the end region 5a of the irradiated region is subjected to main heating. The remaining part or the remaining part of the gas contained in the sacrificial layer 5 is released, and the sacrificial layer 5 in the end region 5a can be peeled off. The subsequent region 5b following the end region 5a of the irradiated region is preheated by receiving the first irradiation by the second pulsed laser beam that has passed through the second region 10b.
以降、基板３の搬送に伴って、全被照射領域が開口窓１０の第２の領域１０ｂを通過したレーザ光により予備加熱された後、第１の領域１０ａを通過したレーザ光により本加熱される。このようにして、犠牲層５全面にレーザ光が照射されることにより、犠牲層５から気体が放出されて被剥離層４の剥離が可能となる。 Thereafter, as the substrate 3 is transported, the entire irradiated region is preheated by the laser light that has passed through the second region 10b of the opening window 10, and then is heated by the laser light that has passed through the first region 10a. The In this way, by irradiating the entire surface of the sacrificial layer 5 with the laser light, the gas is released from the sacrificial layer 5 and the layer to be peeled 4 can be peeled off.
図７は従来技術によるレーザリフトオフ方法を示す説明図である。この場合、被照射領域に照射されるレーザ光の強度は、剥離閾値以上で、汚染閾値未満に設定されている。なお、ここでは、基板３が図５に示す本発明の場合と同じ速度で搬送されている場合について説明する。 FIG. 7 is an explanatory view showing a conventional laser lift-off method. In this case, the intensity of the laser light applied to the irradiated region is set to be equal to or higher than the peeling threshold and lower than the contamination threshold. Here, the case where the substrate 3 is transported at the same speed as in the case of the present invention shown in FIG. 5 will be described.
先ず、図７（ｂ）に示すように、被照射領域の基板搬送方向下流側の端部が遮光マスク８の開口窓１０の結像の基板搬送方向上流側端部に合致してから、同図（ｃ）に示すように、本発明の上記予備加熱領域の基板搬送方向の幅と同じ寸法だけ移動する間に、レーザ光源６が１回目のパルス発光をする。これにより、被照射領域の基板搬送方向下流側の端部領域５ａが開口窓１０を通過したレーザ光により本加熱され、同端部領域５ａの犠牲層５から気体が放出される。この場合、被照射領域の上記端部領域５ａは、照射強度が剥離閾値以上で、汚染閾値未満の高強度のレーザ光により一度に本加熱されるため、同端部領域５ａに急激な温度上昇が発生し、図６に実線Ｃで示すように、犠牲層５から大量の気体（水素）が一時に放出される。したがって、気体の大量放出により犠牲層５の一部も基板３から剥離して被剥離層４に付着し、被剥離層４を汚染することになる。 First, as shown in FIG. 7B, the end of the irradiated region on the downstream side in the substrate transport direction matches the upstream end of the image of the aperture window 10 of the light shielding mask 8 in the substrate transport direction, and then the same. As shown in FIG. 3C, the laser light source 6 emits the first pulse while moving the same dimension as the width of the preheating region of the present invention in the substrate transport direction. Thereby, the end region 5a on the downstream side in the substrate transport direction of the irradiated region is fully heated by the laser beam that has passed through the opening window 10, and gas is released from the sacrificial layer 5 in the end region 5a. In this case, the end region 5a of the irradiated region is heated at once by a high-intensity laser beam having an irradiation intensity equal to or higher than the peeling threshold value and lower than the contamination threshold value. As shown by the solid line C in FIG. 6, a large amount of gas (hydrogen) is released from the sacrificial layer 5 at a time. Therefore, a part of the sacrificial layer 5 is also peeled off from the substrate 3 and attached to the peeled layer 4 due to a large amount of gas release, and the peeled layer 4 is contaminated.
図７（ｄ）は、同図（ｃ）の状態から基板３がさらに搬送され、レーザ光源６が２回目のパルス発光をした状態を示す。この場合、被照射領域の上記端部領域５ａが２回目のレーザ照射を受けて本加熱される。このとき、犠牲層５から放出される気体の放出量は、図６に示すように、低下する。これは、犠牲層５に含まれる気体の大部分が１回目のレーザ照射により放出されるためである。 FIG. 7D shows a state where the substrate 3 is further transported from the state of FIG. 7C and the laser light source 6 emits the second pulse light. In this case, the end region 5a of the irradiated region is heated by receiving the second laser irradiation. At this time, the amount of gas released from the sacrificial layer 5 decreases as shown in FIG. This is because most of the gas contained in the sacrificial layer 5 is released by the first laser irradiation.
なお、被照射領域の上記端部領域５ａに続く後続領域５ｂは、２回目にパルス発光したレーザ光により１回目の照射を受けて本加熱され、同後続領域５ｂに急激な温度上昇が生じて犠牲層５から大量の気体が放出されることになる。これにより、上記と同様に、上記後続領域５ｂに対応した被剥離層４の部分が汚染することになる。 The succeeding region 5b following the end region 5a of the irradiated region is heated by receiving the first irradiation by the laser light pulsed at the second time, and a rapid temperature rise occurs in the following region 5b. A large amount of gas is released from the sacrificial layer 5. Thereby, similarly to the above, the part of the layer 4 to be peeled corresponding to the subsequent region 5b is contaminated.
このように、本発明によれば、被照射領域が予備加熱に続いて本加熱されるようになっているため、従来技術と違って、急激な温度上昇が抑えられ、犠牲層５から一時に放出される気体の放出量を抑制することができる。したがって、被剥離層４の汚染を抑制することができ、汚染閾値を上げて、剥離閾値≦ＰＭ≦汚染閾値のプロセスマージンＰＭを広げることができる。 As described above, according to the present invention, since the irradiated region is subjected to the main heating subsequent to the preheating, unlike the prior art, an abrupt temperature rise is suppressed, and the sacrificial layer 5 is temporarily removed. The amount of released gas can be suppressed. Therefore, contamination of the layer to be peeled 4 can be suppressed, the contamination threshold can be increased, and the process margin PM of separation threshold ≦ PM ≦ contamination threshold can be widened.
なお、基板３が遮光マスク８の開口窓１０の結像において、第２の領域１０ｂに対応した部分の基板搬送方向の幅と同寸法だけ移動する間にレーザ光源６が複数回パルス発光するようにしてもよい。この場合、遮光マスク８の開口窓１０の結像にて、被照射領域の上記第２の領域１０ｂに対応した領域が第２の領域１０ｂを通過したレーザ光により複数回のレーザ照射を受けて予備加熱された後、開口窓１０の第１の領域１０ａを通過したレーザ光により本加熱されるため、同領域の急激な温度上昇が抑えられ、同領域から一度に放出される気体の放出量が抑制される。したがって、この場合も被剥離層４の汚染を抑制することができる。 In the image formation of the opening window 10 of the light shielding mask 8, the laser light source 6 emits pulses a plurality of times while the substrate 3 moves by the same dimension as the width in the substrate transport direction of the portion corresponding to the second region 10b. It may be. In this case, in the image formation of the opening window 10 of the light shielding mask 8, the region corresponding to the second region 10b of the irradiated region is subjected to laser irradiation a plurality of times by the laser light that has passed through the second region 10b. Since the main heating is performed by the laser light that has passed through the first region 10a of the opening window 10 after the preliminary heating, a rapid temperature rise in the region is suppressed, and the amount of gas released from the region at a time is released. Is suppressed. Therefore, also in this case, contamination of the layer to be peeled 4 can be suppressed.
また、上記実施形態においては、レーザ照射光学系２が光透過率の異なる少なくとも二つの領域を基板搬送方向に有する開口窓１０を設けた遮光マスク８を備えている場合について説明したが、本発明はこれに限られず、レーザ照射光学系２は、基板搬送方向に並べて配置した強度の異なるレーザ光を発光する複数のレーザ照射光学系から成り、被照射領域に対して、強度の小さいレーザ光を発光するレーザ照射光学系による照射に続いて、強度の大きいレーザ光を発光するレーザ照射光学系により照射可能に構成されてもよい。 In the above embodiment, the case where the laser irradiation optical system 2 includes the light shielding mask 8 provided with the opening window 10 having at least two regions having different light transmittances in the substrate transport direction has been described. However, the laser irradiation optical system 2 is composed of a plurality of laser irradiation optical systems that emit laser beams having different intensities arranged side by side in the substrate transport direction. Subsequent to the irradiation by the laser irradiation optical system that emits light, the laser irradiation optical system that emits laser light having a high intensity may be irradiated.
図８は本発明によるレーザリフトオフ装置の第２の実施形態を示す概略構成図である。ここでは、第１の実施形態と異なる部分について説明する。
第２の実施形態は、第１及び第２のレーザ照射光学系２Ａ，２Ｂを基板搬送方向に並べて配置し、基板を往復搬送してリフトオフ動作を行うレーザリフトオフ装置であり、往路では、第１のレーザ照射光学系２Ａによる照射強度を第２のレーザ照射光学系２Ｂによる照射強度よりも小さくして照射し、復路では逆に、第２のレーザ照射光学系２Ｂによる照射強度を第１のレーザ照射光学系２Ａによる照射強度よりも小さくして照射するように、各レーザ照射光学系を制御している。
FIG. 8 is a schematic configuration diagram showing a second embodiment of the laser lift-off device according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
The second embodiment is a laser lift-off device in which the first and second laser irradiation optical systems 2A and 2B are arranged side by side in the substrate transport direction, and the substrate is reciprocated to perform a lift-off operation. The irradiation intensity of the laser irradiation optical system 2A is set to be lower than the irradiation intensity of the second laser irradiation optical system 2B. On the reverse path, the irradiation intensity of the second laser irradiation optical system 2B is reversed to the first laser. Each laser irradiation optical system is controlled so that the irradiation intensity is lower than the irradiation intensity by the irradiation optical system 2A.
この場合、図９に示すように、第１及び第２のレーザ照射光学系２Ａ，２Ｂによる照射エネルギー（積分量）が同じになるように、レーザ光のピーク値とパルス幅を設定してもよい。例えば、基板搬送方向上流側に位置するレーザ照射光学系（予備加熱用）は、ピーク値が低く、パルス幅が広いレーザ光を発生するようにレーザ光源の発光を制御し、逆に、基板搬送方向下流側に位置するレーザ照射光学系（加熱用）は、ピーク値が高く、パルス幅が狭いレーザ光を発生するようにレーザ光源の発光を制御するとよい。これにより、予備加熱用レーザ照射で犠牲層５の水素濃度を低下させ、加熱用レーザ照射で気体の大量発生を抑制して剥離を行うことができる。 In this case, as shown in FIG. 9, even if the peak value and the pulse width of the laser beam are set so that the irradiation energy (integration amount) by the first and second laser irradiation optical systems 2A and 2B is the same. Good. For example, the laser irradiation optical system (for preheating) located upstream in the substrate transport direction controls the light emission of the laser light source so as to generate laser light with a low peak value and a wide pulse width. The laser irradiation optical system (for heating) located on the downstream side in the direction is preferably controlled to emit light of a laser light source so as to generate laser light having a high peak value and a narrow pulse width. Thereby, the hydrogen concentration of the sacrificial layer 5 can be reduced by preheating laser irradiation, and peeling can be performed while suppressing a large amount of gas generation by heating laser irradiation.
なお、上記実施形態においては、被剥離層４と基板３との間に犠牲層５を有する場合について説明したが、本発明はこれに限られず、被剥離層４が、例えばＧａＮ層のようにレーザ光の照射により基板３との界面が分解して剥離可能となるものであれば、犠牲層５はなくてもよい。 In the above embodiment, the case where the sacrificial layer 5 is provided between the layer to be peeled 4 and the substrate 3 has been described. However, the present invention is not limited to this, and the layer to be peeled 4 is, for example, a GaN layer. The sacrificial layer 5 may be omitted as long as the interface with the substrate 3 is decomposed by laser light irradiation and can be peeled off.
また、上記実施形態においては、レーザ照射光学系２を固定した状態で基板３を搬送する場合について説明したが、基板３を固定してレーザ照射光学系２又は第１及び第２のレーザ照射光学系２Ａ，２Ｂを移動してもよいし、両者を互いに反対方向に移動してもよい。 In the above embodiment, the case where the substrate 3 is transported with the laser irradiation optical system 2 fixed is described. However, the substrate 3 is fixed and the laser irradiation optical system 2 or the first and second laser irradiation optical systems are fixed. The systems 2A and 2B may be moved, or both may be moved in opposite directions.
１…搬送手段
２…レーザ照射光学系
２Ａ…第１のレーザ照射光学系
２Ｂ…第２のレーザ照射光学系
３…基板
４…被剥離層
５…犠牲層
６…レーザ光源
８…遮光マスク
１０…開口窓
１０ａ…第１の領域
１０ｂ…第２の領域
DESCRIPTION OF SYMBOLS 1 ... Conveyance means 2 ... Laser irradiation optical system 2A ... 1st laser irradiation optical system 2B ... 2nd laser irradiation optical system 3 ... Substrate 4 ... Layer to be peeled 5 ... Sacrificial layer 6 ... Laser light source 8 ... Light shielding mask 10 ... Open window 10a ... 1st area | region 10b ... 2nd area | region
Claims (9)
前記レーザ照射光学系は、前記被照射領域に対して、照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射に続いて強度の大きいレーザ光を照射可能に構成されたことを特徴とするレーザリフトオフ装置。 The surface of the substrate was irradiated with laser light from the back side of the substrate while relatively moving the transparent substrate and the laser irradiation optical system for irradiating the laser beam, and formed on the surface of the substrate. A laser lift-off device for peeling a layer to be peeled,
The laser irradiation optical system is configured to be able to irradiate the irradiated region with laser light having high intensity following irradiation of laser light having low intensity among laser light having different irradiation intensity. Laser lift-off device.
前記開口窓の光透過率は、相対的な前記基板搬送方向上流側の領域よりも下流側の領域の方が低いことを特徴とする請求項１記載のレーザリフトオフ装置。 The laser irradiation optical system includes: a light shielding mask provided with an opening window having at least two regions having different light transmittances in the relative substrate transport direction; and a lens that reversely forms an image of the opening window on the irradiated region. Prepared,
2. The laser lift-off device according to claim 1, wherein the light transmittance of the opening window is lower in the downstream region than in the upstream region relative to the substrate transport direction.
前記レーザ照射光学系は、基板搬送方向に並べて配置した第１及び第２のレーザ照射光学系から成り、相対的な基板搬送方向上流側に位置するレーザ照射光学系による照射強度を下流側に位置するレーザ照射光学系による照射強度よりも小さくなるように、前記第１及び第２のレーザ照射光学系の照射強度を往路及び復路で反転させることを特徴とする請求項１記載のレーザリフトオフ装置。 The substrate and the laser irradiation optical system are configured to be reciprocally conveyed relatively,
The laser irradiation optical system includes first and second laser irradiation optical systems arranged side by side in the substrate transfer direction, and the irradiation intensity by the laser irradiation optical system positioned upstream in the relative substrate transfer direction is positioned downstream. The laser lift-off device according to claim 1, wherein the irradiation intensities of the first and second laser irradiation optical systems are reversed in the forward path and the return path so as to be smaller than the irradiation intensity by the laser irradiation optical system.
前記基板を前記レーザ照射光学系に対して相対的に移動しながら、基板表面の全被照射領域に対して照射強度の異なるレーザ光のうち、強度の小さいレーザ光の照射に続いて強度の大きいレーザ光を照射することを特徴とするレーザリフトオフ方法。 A laser lift-off method in which a layer to be peeled formed on the substrate is peeled off from the substrate by irradiating laser light from the back side of the transparent substrate with a laser irradiation optical system,
While moving the substrate relative to the laser irradiation optical system, the laser beam having a high intensity following the irradiation of the laser beam having a low intensity among the laser beams having different irradiation intensities with respect to the entire irradiated region of the substrate surface. A laser lift-off method characterized by irradiating a laser beam.
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| JP2016204263A JP2018065159A (en) | 2016-10-18 | 2016-10-18 | Laser lift-off apparatus and laser lift-off method |
| PCT/JP2017/032916 WO2018074106A1 (en) | 2016-10-18 | 2017-09-12 | Laser lift-off device and laser lift-off method |
| TW106135257A TW201827152A (en) | 2016-10-18 | 2017-10-16 | Laser lift-off apparatus and laser lift-off method |
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| WO2021117753A1 (en) * | 2019-12-12 | 2021-06-17 | 東レエンジニアリング株式会社 | Collection lens height adjusting method, chip transfer method, collection lens height adjusting device, and chip transfer device |
| JP2022031317A (en) * | 2019-09-10 | 2022-02-18 | 株式会社東京精密 | Laser machining device |
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| CN110454331B (en) * | 2019-08-27 | 2020-09-29 | 广州大学 | Laser regulation and control system and fan blade installation method |
| CN111146137B (en) * | 2019-12-30 | 2023-04-18 | 浙江清华柔性电子技术研究院 | Laser lift-off method and laser lift-off device |
| US11875967B2 (en) * | 2020-05-21 | 2024-01-16 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
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| KR100700654B1 (en) * | 2005-02-22 | 2007-03-27 | 삼성에스디아이 주식회사 | Laser Irradiation Device and Laser Induced Thermal Imaging |
| JP5775265B2 (en) * | 2009-08-03 | 2015-09-09 | 浜松ホトニクス株式会社 | Laser processing method and semiconductor device manufacturing method |
| JP2010153876A (en) * | 2010-01-08 | 2010-07-08 | Hitachi Displays Ltd | Method for reforming semiconductor thin film, reformed semiconductor thin film, method for evaluating reformed semiconductor thin film, thin film transistor formed of the semiconductor thin film, and image display device with circuit constituted using the thin film transistor |
| CN108886232B (en) * | 2015-12-25 | 2021-08-17 | 鸿海精密工业股份有限公司 | Wire harness light source, wire harness irradiation device, and laser lift-off method |
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| JP2022031317A (en) * | 2019-09-10 | 2022-02-18 | 株式会社東京精密 | Laser machining device |
| WO2021117753A1 (en) * | 2019-12-12 | 2021-06-17 | 東レエンジニアリング株式会社 | Collection lens height adjusting method, chip transfer method, collection lens height adjusting device, and chip transfer device |
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| WO2018074106A1 (en) | 2018-04-26 |
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