TWI669181B - Beam shaping mask, laser processing apparatus and method - Google Patents

Beam shaping mask, laser processing apparatus and method Download PDF

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Publication number
TWI669181B
TWI669181B TW104113633A TW104113633A TWI669181B TW I669181 B TWI669181 B TW I669181B TW 104113633 A TW104113633 A TW 104113633A TW 104113633 A TW104113633 A TW 104113633A TW I669181 B TWI669181 B TW I669181B
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laser
opening
beam shaping
shaping mask
processed
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TW104113633A
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Chinese (zh)
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TW201545829A (en
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水村通伸
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日商V科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic material
    • B23K2103/42Plastics

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

本發明係一種具有雷射加工於薄膜的開口圖案之形狀的相似形開口之光束塑型遮罩;開口係形成為具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部中仍可確保至少可雷射加工薄膜之最低限度的雷射強度的光穿透率者。 The present invention is a beam shaping mask with a similarly shaped opening that is laser-processed in the shape of an opening pattern of a film; the opening is formed to have a light transmittance in the opening that gradually decreases from the central portion toward the peripheral portion, and even In the peripheral portion, at least the minimum laser intensity light transmittance of the laser processable film can be ensured.

Description

光束塑形遮罩、雷射加工裝置及雷射加工方法 Beam shaping mask, laser processing device and laser processing method

本發明係關於一種具有雷射加工於被加工物之孔的形狀之相似形開口的光束塑型遮罩,特別是關於一種欲防止在雷射加工後之孔的緣部產生毛邊之光束塑型遮罩、雷射加工裝置以及雷射加工方法。 The present invention relates to a beam shaping mask with a similarly shaped opening of a laser-processed hole in a workpiece, and in particular to a beam shaping to prevent burrs from occurring at the edge of a hole after laser processing Shield, laser processing device and laser processing method.

自以往,此種的光束塑型遮罩係被用於投影成像雷射.消除.系統者,並具有形成於可撓性薄膜的孔洞之相似形圖案,而藉由將該圖案成像於該薄膜上,便會使得該薄膜被雷射消除而於薄膜上形成該孔洞之孔(例如參照日本特開表2005-517810號公報)。 Since the past, such beam shaping masks have been used for projection imaging lasers. eliminate. System, and has a similar pattern of holes formed in the flexible film, and by imaging the pattern on the film, the film will be eliminated by the laser to form the hole in the film (for example (Refer to Japanese Patent Laid-Open No. 2005-517810).

然而,此般以往的光束塑型遮罩中,該圖案係形成於薄膜之孔徑的相似形開口,且由於開口內之光穿透率會橫跨整體而為固定,故藉由穿透圖案(開口)之雷射光來貫穿薄膜而加工的孔洞之緣部便會因雷射光面內強度分布的差異而產生切剩(以下稱為「毛邊」)。從而,便無法於薄膜精度良好地形成微細的該孔洞之貫穿孔。 However, in such conventional beam shaping masks, the pattern is formed in a similar opening of the aperture of the film, and since the light transmittance in the opening will be fixed across the whole, the penetration pattern ( The opening) of the laser light penetrates the film and the edge of the hole processed will be cut due to the difference in the intensity distribution in the laser light surface (hereinafter referred to as "burr"). Therefore, it is impossible to form fine through holes of the holes in the thin film with high accuracy.

於是,本發明係為了處理此般問題點,其目的在於提供一種欲防止於雷射加工後之孔的緣部產生毛邊的光束塑型遮罩、雷射加工裝置及雷射加工方法。 Therefore, in order to deal with such problems, the present invention aims to provide a beam shaping mask, a laser processing device, and a laser processing method for preventing burrs from occurring at the edge of a hole after laser processing.

為了達成上述目的,本發明之光束塑型遮罩係具有雷射加工於被加工物之孔的形狀之相似形開口的光束塑型遮罩,該開口係形成為具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可確保至少可雷射加工該被加工物之最低限度的雷射強度之光穿透率者。 In order to achieve the above object, the beam shaping mask of the present invention is a beam shaping mask having a similarly shaped opening that is laser-processed in the shape of the hole of the object to be processed, and the opening is formed to have light penetration in the opening The rate will gradually decrease from the central part toward the peripheral edge part, and even at the peripheral edge part, it can ensure at least the minimum laser intensity light transmittance of the laser-processable object.

又,本發明之雷射加工裝置係將形成於光束塑型遮罩的開口縮小投影至被加工物上,而於該被加工物雷射加工出孔的雷射加工裝置,其中該光束塑型遮罩係將該開口形成為具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可確保至少可雷射加工該被加工物之最低限度的雷射強度之光穿透率者。 In addition, the laser processing apparatus of the present invention is a laser processing apparatus that projects the opening formed in the beam shaping mask on the object to be processed, and laser-processes the hole in the object, wherein the beam shaping The mask is formed so that the light transmittance in the opening will gradually decrease from the central portion toward the peripheral portion, and even at the peripheral portion, at least the minimum laser intensity at which the workpiece can be laser processed can be ensured The light penetration rate.

進一步地,本發明之雷射加工方法係將形成於光束塑型遮罩的開口縮小投影至被加工物上,而於該被加工物雷射加工出孔的雷射加工方法,其係讓複數照射之雷射光穿透以具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可確保至少可雷射加工該被加工物之最低限度的雷射強度之光穿透率的方式而形成於該光束塑型遮罩的該開口;將穿透該開口之該複數照射的雷射光照射至該被加工物,來於該被加工物加工出該孔。 Further, the laser processing method of the present invention narrows and projects the opening formed in the beam shaping mask onto the object to be processed, and the laser processing method for laser processing the hole in the object to be processed The irradiated laser light penetrates so that the light transmittance in the opening will gradually decrease from the central portion toward the peripheral portion, and even at the peripheral portion, at least the minimum laser intensity at which the workpiece can be laser processed can be ensured Formed in the opening of the beam shaping mask by means of light transmittance; irradiating the plurality of irradiated laser light penetrating the opening to the object to process the hole from the object.

根據本發明,便可防止於雷射加工後之孔的緣部產生毛邊。從而,便可精度良好地形成微細的孔於被加工物。 According to the present invention, it is possible to prevent burrs from occurring at the edge of the hole after laser processing. As a result, fine holes can be accurately formed in the workpiece.

1‧‧‧光束塑型遮罩 1‧‧‧beam shaping mask

2‧‧‧透明基板 2‧‧‧Transparent substrate

3‧‧‧遮光膜 3‧‧‧shading film

4‧‧‧開口 4‧‧‧ opening

5‧‧‧遮光點 5‧‧‧shade point

6‧‧‧XY台 6‧‧‧XY

7‧‧‧雷射光源 7‧‧‧Laser light source

8‧‧‧耦合光學單元 8‧‧‧Coupling optical unit

9‧‧‧成像透鏡 9‧‧‧Imaging lens

10‧‧‧對物透鏡 10‧‧‧object lens

11‧‧‧半透鏡 11‧‧‧Half lens

12‧‧‧拍攝照相機 12‧‧‧ shooting camera

13‧‧‧二向分光鏡 13‧‧‧Two-way beam splitter

14‧‧‧照明光源 14‧‧‧Light source

15‧‧‧薄膜 15‧‧‧ film

16‧‧‧基準基板 16‧‧‧ benchmark substrate

16a‧‧‧面 16a‧‧‧ noodles

16b‧‧‧面 16b‧‧‧ noodles

17‧‧‧成像透鏡 17‧‧‧Imaging lens

18‧‧‧中繼透鏡 18‧‧‧Relay lens

19‧‧‧全反射鏡 19‧‧‧Total reflector

20‧‧‧開口圖案 20‧‧‧ opening pattern

21‧‧‧孔 21‧‧‧ hole

22‧‧‧毛邊 22‧‧‧burr

O‧‧‧線 O‧‧‧ line

L‧‧‧雷射光 L‧‧‧Laser

圖1係顯示本發明之光束塑型遮罩的一實施形態之圖式,(a)係俯視圖,(b)係(a)之O-O線剖面箭頭視圖。 FIG. 1 is a diagram showing an embodiment of a beam shaping mask of the present invention, (a) is a top view, and (b) is an O-O line arrow view of (a).

圖2係說明本發明之光束塑型遮罩的開口內之光穿透率的圖式,(a)係顯示沿著開口內之中心線的光穿透率特性之一範例的圖表,(b)係顯示半色調之說明圖,(c)係顯示(b)之半色調的形成例之說明圖。 FIG. 2 is a diagram illustrating the light transmittance in the opening of the beam shaping mask of the present invention, (a) is a graph showing an example of light transmittance characteristics along the center line in the opening, (b ) Is an explanatory diagram showing a halftone, and (c) is an explanatory diagram showing a formation example of the halftone of (b).

圖3係顯示本發明之雷射加工裝置的一實施形態之概略構成的說明圖。 3 is an explanatory diagram showing a schematic configuration of an embodiment of the laser processing apparatus of the present invention.

圖4係顯示以往技術之光束塑型遮罩的圖式,(a)係俯視圖,(b)係顯示沿著開口內之中心線的光穿透率特性之一範例的圖表。 4 is a diagram showing a beam shaping mask of the prior art, (a) is a top view, and (b) is a graph showing an example of light transmittance characteristics along a center line in an opening.

圖5係顯示使用以往技術的光束塑型遮罩的雷射加工範例之說明圖,(a)係顯示雷射照射開始時,(b)係顯示雷射加工中途階段,(c)係顯示雷射加工後之狀態。 5 is an explanatory diagram showing an example of laser processing using a beam shaping mask of the prior art, (a) shows the start of laser irradiation, (b) shows the mid-stage of laser processing, (c) shows the laser The state after shot processing.

圖6係以剖面來顯示使用本發明之光束塑型遮罩的雷射加工範例之說明圖。 FIG. 6 is an explanatory diagram showing an example of laser processing using the beam shaping mask of the present invention in a cross section.

圖7係以俯視來顯示使用本發明之光束塑型遮罩的雷射加工範例之說明圖。 FIG. 7 is an explanatory view showing an example of laser processing using the beam shaping mask of the present invention from above.

以下,便基於添附圖式來詳細地說明本發明實施形態。圖1係顯示本發明之光束塑型遮罩的一實施形態之圖式,(a)係俯視圖,(b)係(a)之O-O線剖面箭頭視圖。又,圖2係說明本發明之光束塑型遮罩之開口內的光穿透率之圖式,(a)係顯示沿著開口內之中心線的光穿透率特性之一範例的圖表,(b)係顯示半色調之說明圖,(c)係顯示(b)之半色調的形成例之說明圖。該光束塑型遮罩1係具有加工於被加工物之孔的形狀之相似形開口者,並構成為具備有透明基板2、遮光膜3、開口4。 Hereinafter, the embodiments of the present invention will be described in detail based on the attached drawings. FIG. 1 is a diagram showing an embodiment of a beam shaping mask of the present invention, (a) is a top view, and (b) is an O-O line arrow view of (a). 2 is a graph illustrating the light transmittance in the opening of the beam shaping mask of the present invention, (a) is a graph showing an example of light transmittance characteristics along the center line in the opening, (b) is an explanatory diagram showing a halftone, and (c) is an explanatory diagram showing an example of forming a halftone of (b). The beam shaping mask 1 has a similarly shaped opening processed in the shape of a hole of a workpiece, and is configured to include a transparent substrate 2, a light shielding film 3, and an opening 4.

該透明基板2係特別是能讓可消除薄片狀被加工物之樹脂製薄膜而為波長400nm以下的雷射光以高穿透率來穿透者,例如為石英基板。或者,可為透明的玻璃基板。 In particular, the transparent substrate 2 is a resin substrate capable of eliminating a thin film-shaped workpiece and allows laser light with a wavelength of 400 nm or less to penetrate with high transmittance, such as a quartz substrate. Alternatively, it may be a transparent glass substrate.

包覆該透明基板2之一面來設置遮光膜3。該遮光膜3係遮斷雷射光之穿透者,為例如由鉻(Cr)等所構成而厚度為100nm左右之金屬膜,且利用濺鍍、蒸鍍等習知之成膜技術來在透明基板2上加以成膜。 A light-shielding film 3 is provided covering one surface of the transparent substrate 2. The light-shielding film 3 is a metal film made of, for example, chromium (Cr) and having a thickness of about 100 nm, which blocks the penetration of laser light, and uses conventional film-forming techniques such as sputtering and evaporation to form a transparent substrate. 2. Form a film on it.

該遮光膜3係設置有開口4。該開口4係用以將照射於薄膜之雷射光光軸所交叉的橫剖面形狀塑型者,為形成於遮光膜3而雷射光會通過的孔,且具有雷射加工於薄膜的開口圖案之孔形狀的相似形,並如圖1(a)所示般,縱橫排列地設置有複數個。 The light-shielding film 3 is provided with an opening 4. The opening 4 is used to shape the cross-sectional shape of the laser light beam irradiated on the film, and is formed in the light-shielding film 3 through which the laser light passes, and has an opening pattern for laser processing on the film The holes are similar in shape, and as shown in FIG. 1 (a), a plurality of holes are arranged vertically and horizontally.

詳而言之,開口4如圖2(a)所示,係形成為具有該開口4內光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可確保至少可雷射加工(消除)該薄膜之最低限度的雷射強度,例如60%左右的光穿透率。該光穿透率之漸減的方式可為線形或非線形。 In detail, as shown in FIG. 2 (a), the opening 4 is formed such that the light transmittance in the opening 4 will gradually decrease from the central portion toward the peripheral portion, and even at the peripheral portion, at least laser processing can be ensured (Eliminate) the minimum laser intensity of the film, for example, about 60% light transmittance. The decreasing manner of the light transmittance may be linear or non-linear.

為了使得開口4內之光穿透率具有上述般從中央部朝向周緣部漸減的特性,便可將如圖2(b)所示般之開口內作為半色調。因此,如同圖(c)所示,便可於開口4內以從中央部朝向周緣部其大小會變大或配置密度變高之方式來形成與該遮光膜3相同而由金屬膜所構成之複數遮光點5。另外,遮光點5之尺寸只要為較由成像透鏡9與對物透鏡10所構成之光學系統的分解能要小的尺寸即可。又,為了讓開口4內之光穿透率從中央部朝向周緣部漸減,便可將複數遮光線從中央部朝向周緣部形成為其寬度會變大或配置密度變高。為了於遮光膜3形成上述般之開口4,便藉由在包覆遮光膜3而塗布光阻,並使用光罩來曝光及顯影該光阻,以形成阻劑遮罩後,將露出於表面之該遮光膜3的部分利用濕蝕刻或乾蝕刻等的習知之蝕刻技術來加以去除,便可形成。 In order to make the light transmittance in the opening 4 gradually decrease from the central portion toward the peripheral portion as described above, the opening in the opening as shown in FIG. 2 (b) can be used as a halftone. Therefore, as shown in FIG. (C), the same structure as the light-shielding film 3 and made of a metal film can be formed in the opening 4 in such a manner that the size of the center portion toward the peripheral portion becomes larger or the arrangement density becomes higher. Plural shading points 5. In addition, the size of the shading point 5 may be smaller than the resolution of the optical system composed of the imaging lens 9 and the objective lens 10. In addition, in order to decrease the light transmittance in the opening 4 from the central portion toward the peripheral portion, a plurality of light-shielding lines can be formed from the central portion toward the peripheral portion so that the width becomes larger or the arrangement density becomes higher. In order to form the above-mentioned opening 4 in the light-shielding film 3, a photoresist is coated on the light-shielding film 3, and a photomask is used to expose and develop the photoresist to form a resist mask, which will be exposed on the surface The portion of the light-shielding film 3 can be formed by removing conventional etching techniques such as wet etching or dry etching.

在藉由複數照射之雷射照射來形成薄膜之開口圖案的情況,即便在1次照射的雷射加工時,仍需要讓投影至薄膜之該開口4的周緣部之雷射強度最少也要為可消除薄膜之數值。藉此,薄膜之該投影的開口4所對應的部分便會以雷射光之複數照射來完全地消除而加以去除,並於薄膜形成該開口圖案。該情況,由於薄膜係從其中央部朝向周緣部慢慢地擴張而形成有開口圖案之孔,故不會有於開口圖案之周緣部產生毛邊之虞。 In the case where the opening pattern of the film is formed by laser irradiation of a plurality of irradiations, even in the laser processing of one irradiation, it is necessary to minimize the laser intensity projected onto the peripheral portion of the opening 4 of the film as The value of the film can be eliminated. In this way, the portion corresponding to the projected opening 4 of the film is completely eliminated by the multiple irradiation of laser light and removed, and the opening pattern is formed in the film. In this case, since the film is gradually expanded from the central portion toward the peripheral portion to form the hole with the opening pattern, there is no risk of burrs occurring at the peripheral portion of the opening pattern.

接著,便就具備有本發明之光束塑型遮罩1的雷射加工裝置之實施形態來加以說明。圖3係顯示本發明之雷射加工裝置的一實施形態之概略構成的說明圖。 Next, an embodiment of the laser processing apparatus equipped with the beam shaping mask 1 of the present invention will be described. 3 is an explanatory diagram showing a schematic configuration of an embodiment of the laser processing apparatus of the present invention.

該雷射加工裝置係依序具備有:XY台6;於該XY台6上方從雷射光L之行進方向上游朝向下游的雷射光源7;耦合光學單元8;光束塑型遮罩1;成像透鏡9;以及對物透鏡10。又,以半透鏡11來分歧從對物透鏡10朝向成像透鏡9的光線路徑之光線路徑上係配置有拍攝照相機12,在以穿透400nm以下的波長之雷射光L並反射可視光之二向分光鏡13來分歧從對 物透鏡10朝向成像透鏡9的光線路徑之光線路徑上係配置有照明光源14。 The laser processing device is sequentially provided with: an XY table 6; a laser light source 7 above the XY table 6 from the upstream to the downstream of the traveling direction of the laser light L; a coupling optical unit 8; a beam shaping mask 1; imaging Lens 9; and object lens 10. In addition, the half-lens 11 diverges from the objective lens 10 toward the imaging lens 9 on the ray path. A photographing camera 12 is arranged in the two directions of laser light L that penetrates a wavelength of 400 nm or less and reflects visible light. Beam splitter 13 comes to diverge from right An illumination light source 14 is arranged on the light path of the light path of the object lens 10 toward the imaging lens 9.

在此,XY台6係於上面載置可讓可見光穿透之樹脂製薄膜15,並於X、Y方向移動平行於XY平面的面內者,且藉由省略圖示之控制裝置來加以控制,步進移動預先輸入而記憶的移動量。 Here, the XY stage 6 is mounted on the resin film 15 that allows visible light to pass therethrough, and moves in the X and Y directions parallel to the plane of the XY plane, and is controlled by a control device not shown , The stepping movement is the movement amount input in advance and memorized.

該雷射光源7係放射出會產生波長為400nm以下的雷射光L之例如KrF248nm的準分子雷射或1064nm之第3諧波或第4諧波的雷射光L之YAG雷射。雷射光L雖可為紅外線或可見光,但對消除薄膜15而言較佳地係紫外線。 The laser light source 7 emits a YAG laser that generates laser light L having a wavelength of 400 nm or less, such as an excimer laser of KrF248 nm, or laser light L of the third harmonic or fourth harmonic of 1064 nm. Although the laser light L may be infrared light or visible light, it is preferably ultraviolet light for the elimination film 15.

又,該耦合光學單元8係包含有擴張從雷射光源7所放射之雷射光束之光束擴張器;將雷射光L之輝度分度均勻化而照射至後述光束塑型遮罩1的光學積分器以及聚光透鏡。 In addition, the coupling optical unit 8 includes a beam expander that expands the laser beam emitted from the laser light source 7; the brightness index of the laser light L is uniformized to illuminate the optical integral of the beam shaping mask 1 described later And condenser lens.

該光束塑型遮罩1係將照射至薄膜15之雷射光L塑型為具有雷射加工之開口圖案的相似形剖面形狀之複數道雷射光L而射出者,且如圖1(a)所示,為具備有以位於預定單位區域內的複數開口圖案之配列間距的M倍間距來配置相對於形成於薄膜15之開口圖案而以預定之既定擴大倍率M所形成的複數開口4者,且為在披覆於透明石英基板的鉻(Cr)等的遮光膜3形成該開口4者。 The beam shaping mask 1 is configured to emit the laser light L irradiated to the film 15 into a plurality of laser lights L of a similar cross-sectional shape with a laser-processed opening pattern, as shown in FIG. 1 (a) It is shown that a plurality of openings 4 formed at a predetermined predetermined magnification M relative to the opening pattern formed in the thin film 15 are arranged with an M-time pitch of the arrangement pitch of the plurality of opening patterns in a predetermined unit area, and The opening 4 is formed on a light-shielding film 3 of chromium (Cr) or the like coated on a transparent quartz substrate.

詳而言之,該光束塑型遮罩1係具有如前述般開口圖案之相似形開口4,且構成為得到如圖2(a)所示,讓該開口4內之光穿透率從中央部朝向周緣部漸減,並且即便在周緣部仍可確保至少可雷射加工薄膜15之最低限度的雷射強度,例如60%左右的光穿透率。 In detail, the beam shaping mask 1 has a similarly shaped opening 4 with an opening pattern as described above, and is configured to obtain the light transmittance in the opening 4 from the center as shown in FIG. 2 (a). The portion gradually decreases toward the peripheral portion, and even at the peripheral portion, at least the minimum laser intensity of the laser-processable film 15 can be ensured, for example, a light transmittance of about 60%.

該成像透鏡9係與後述之對物透鏡10連動來將形成於光束塑型遮罩1的複數開口4以預定倍率M縮小投影於薄膜15上者,且為聚光透鏡。 The imaging lens 9 is a condensing lens that is linked with an object lens 10 described later to reduce and project a plurality of openings 4 formed in the beam shaping mask 1 on the film 15 at a predetermined magnification M.

又,該對物透鏡10係與該成像透鏡9連動來將形成於光束塑型遮罩1的複數開口4以預定倍率M縮小投影於薄膜15上,並且配置於例如薄膜15之內面側,而取出設置有為雷射光L之照射定位基準的基準圖案之透明基準基板16的該基準圖案之成像並可藉由後述之拍攝照相機12來拍攝。然後,對物透鏡10之成像位置與光束塑型遮罩1係成為共軛關係。 In addition, the object lens 10 is linked with the imaging lens 9 to project a plurality of openings 4 formed in the beam shaping mask 1 onto the film 15 at a predetermined magnification M, and is disposed on the inner surface side of the film 15, for example. The imaging of the reference pattern of the transparent reference substrate 16 provided with the reference pattern that is the reference for the irradiation positioning of the laser light L can be taken by the shooting camera 12 described later. Then, the imaging position of the objective lens 10 and the beam shaping mask 1 are in a conjugate relationship.

該拍攝照相機12係拍攝設置於基準基板16之該基準圖案者,且為拍攝例如2維影像之CCD照相機或CMOS照相機等。然後,對物透鏡10之成像位置與拍攝照相機12之拍攝面係成為共軛關係。 The photographing camera 12 photographs the reference pattern provided on the reference substrate 16 and is, for example, a CCD camera or a CMOS camera that shoots a two-dimensional image. Then, the imaging position of the objective lens 10 and the imaging surface of the imaging camera 12 are in a conjugate relationship.

該照明光源14係放射可見光,例如鹵素燈等,且為照明拍攝照相機12之拍攝區域而可利用拍攝照相機12來拍攝者。 The illumination light source 14 emits visible light, such as a halogen lamp, etc., and can illuminate the imaging area of the imaging camera 12 by using the imaging camera 12 to shoot.

另外,圖3中,符號17係與對物透鏡10連動而讓基準基板16之基準圖案的像或藉由雷射加工所形成之開口圖案20的像等成像於拍攝照相機12之拍攝面的成像透鏡,符號18係中繼透鏡,符號19係全反射鏡。 In FIG. 3, the symbol 17 is linked with the object lens 10 to image the image of the reference pattern of the reference substrate 16 or the image of the opening pattern 20 formed by laser processing on the imaging surface of the imaging camera 12 The lens, symbol 18 is a relay lens, and symbol 19 is a total reflection mirror.

接著,便就使用此般所構成之雷射加工裝置而進行的雷射加工方法來加以說明。在此係就於薄膜15形成開口圖案之情況來加以說明。 Next, the laser processing method using the laser processing apparatus comprised in this way is demonstrated. Here, the case where the opening pattern is formed in the thin film 15 will be described.

首先,於XY台6上將基準基板16載置固定,將形成有基準圖案之面16a作為XY台6側,並且將薄膜15密合於與形成有基準基板16之基準圖案的面16a相反側之面16b。 First, the reference substrate 16 is placed and fixed on the XY stage 6, the surface 16a on which the reference pattern is formed is the XY stage 6 side, and the film 15 is adhered to the side opposite to the surface 16a on which the reference pattern of the reference substrate 16 is formed面 16b.

接著,讓XY台6移動,而使得對物透鏡10對位於薄膜15之雷射加工開始位置。詳而言之,係藉由拍攝照相機12,穿透薄膜15來拍攝雷射加工開始位置的例如對應於中心位置而設置於該基準基板16的基準圖案,以將該基準圖案定位於拍攝中心。另外,該拍攝中心係一致於對物透鏡10之光軸。 Next, the XY stage 6 is moved so that the object lens 10 is positioned at the laser processing start position of the film 15. In detail, the reference pattern set on the reference substrate 16 corresponding to the center position, for example, corresponding to the center position of the laser processing start position is photographed by the shooting camera 12 through the film 15 to position the reference pattern at the shooting center. In addition, the shooting center coincides with the optical axis of the objective lens 10.

接著,沿著對物透鏡10之光軸來使得雷射加工裝置的雷射光學單元於Z軸方向上升預定距離,並將對物透鏡10之成像位置定位於薄膜15與該基準基板16之界面。 Next, the laser optical unit of the laser processing device is raised along the optical axis of the object lens 10 by a predetermined distance in the Z-axis direction, and the imaging position of the object lens 10 is positioned at the interface between the film 15 and the reference substrate 16 .

接著,啟動雷射光源7而脈衝放射,並放射複數照射之雷射光L。所放射之雷射光L係藉由耦合光學單元8來擴張,以成為強度分布均勻的雷射光L而照射至光束塑型遮罩1。 Next, the laser light source 7 is activated to radiate pulses, and radiate a plurality of irradiated laser lights L. The radiated laser light L is expanded by the coupling optical unit 8 so that the laser light L with uniform intensity distribution is irradiated to the beam shaping mask 1.

照射至光束塑型遮罩1之雷射光L係藉由穿透該光束塑型遮罩1之複數開口4而被塑型為交叉於光軸之橫剖面形狀會為開口圖案形狀的相似形,並成為複數雷射光L而從光束塑型遮罩1射出。然後,藉由對物透鏡10來聚光於薄膜15上。 The laser light L irradiated to the beam shaping mask 1 is shaped to be similar to the shape of the opening pattern by the cross-sectional shape crossing the optical axis by penetrating the plurality of openings 4 of the beam shaping mask 1, Then, it becomes a plurality of laser light L and is emitted from the beam shaping mask 1. Then, the objective lens 10 collects light on the film 15.

該情況下,如圖4(a)所示般,在開口4內之光穿透率會如同圖(b)所示般,橫跨整體而為略固定之先前技術的光束塑型遮罩1中,經塑型之雷射光L的面內強度分布係具有容許範圍內之差異而整體成為略均勻。從而,當藉由此般雷射光L來加工薄膜15時,在從圖5(a)所示之雷射照射開始時到同圖(b)所示之雷射加工途中階段中,便會橫跨整體並以略固定深度來形成開口圖案20之孔21。但是,在開口圖案20之孔21貫穿薄膜15之前,會因雷射光L的面內強度分布之差異而產生開口圖案20之孔21有貫穿之部分及未貫穿之部分。從而,如同圖(c)所示,便會於開口圖案20之雷射光照射側的相反側緣部產生毛邊22。 In this case, as shown in FIG. 4 (a), the light transmittance in the opening 4 is as shown in FIG. In the middle, the in-plane intensity distribution of the shaped laser light L has a difference within an allowable range and becomes slightly uniform as a whole. Therefore, when the thin film 15 is processed by the laser light L in this way, from the beginning of laser irradiation shown in FIG. 5 (a) to the middle of the laser processing shown in FIG. The holes 21 of the opening pattern 20 are formed across the whole and at a slightly fixed depth. However, before the hole 21 of the opening pattern 20 penetrates the thin film 15, there will be a portion where the hole 21 of the opening pattern 20 penetrates and a portion that does not penetrate due to the difference in the in-plane intensity distribution of the laser light L. Therefore, as shown in FIG. (C), burrs 22 are generated on the opposite side edge portion of the opening pattern 20 on the laser light irradiation side.

另一方面,由於本發明中,如圖2(a)所示,係以該開口4內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可確保可消除薄膜15之雷射強度之方式來得到最低仍有60%左右之光穿透率,故如圖6(a)及圖7(a)所示,薄膜15係從雷射強度較強之中央部加工有孔21,而藉由複數照射之雷射光L的照射,孔21便會如圖6(b)~(d)及圖7(b)~(d)所示般慢慢地增加深度並變大,並如圖6(e)及圖7(e)所示,最後會貫穿薄膜15而形成開口圖案20。 On the other hand, in the present invention, as shown in FIG. 2 (a), the light transmittance in the opening 4 gradually decreases from the central portion toward the peripheral portion, and the thin film 15 can be eliminated even at the peripheral portion The minimum laser transmittance is about 60%, so as shown in Fig. 6 (a) and Fig. 7 (a), the thin film 15 is processed from the central part with stronger laser intensity. Hole 21, and by the irradiation of a plurality of laser lights L, the hole 21 will slowly increase in depth and become larger as shown in Figures 6 (b) ~ (d) and 7 (b) ~ (d) And, as shown in FIG. 6 (e) and FIG. 7 (e), the opening pattern 20 is formed through the film 15 at last.

如此般,根據本發明,由於薄膜15係從其中央部朝向周緣部慢慢地擴張來形成有開口圖案20之孔21,故於開口圖案20之周緣部便不會有產生毛邊22之虞。 In this way, according to the present invention, since the film 15 is gradually expanded from the central portion toward the peripheral portion to form the hole 21 with the opening pattern 20, there is no possibility that the burr 22 may be generated at the peripheral portion of the opening pattern 20.

如此一來,在於雷射加工開始位置之單位區域形成複數開口圖案20時,XY台6會在X或Y軸方向步進移動預定距離,並依序地於第2單位區域、第3單位區域...等各單位區域雷射加工複數開口圖案20。如此一來,便會於薄膜15之預定既定位置形成有複數開口圖案20。 In this way, when a plurality of opening patterns 20 are formed in the unit area at the start position of laser processing, the XY stage 6 will move stepwise in the X or Y axis direction by a predetermined distance and sequentially in the second unit area and the third unit area ... and laser processing a plurality of opening patterns 20 in each unit area. In this way, a plurality of opening patterns 20 are formed at predetermined predetermined positions of the film 15.

如上述,複數開口圖案20之形成係以拍攝照相機12來拍攝雷射加工開始位置之單位區域的例如對應於中心位置而設置於該基準基板16的基準圖案,而在確認該基準圖案之位置後,便以該基準圖案之位置為基準來於X、Y方向步進移動XY台6而加以進行。此時,可基於XY台之機械精度來步進移動預定的既定距離,並於各單位區域形成複數開口圖案20,或亦可以拍攝照相機12來拍攝各單位區域之對應於中心位置來設置於基準基板16 的基準圖案,而在於基準圖案定位拍攝照相機12之例如拍攝中心(一致於對物透鏡10之光軸)後,來雷射加工複數開口圖案20。進一步地,亦可將XY台6步進移動預定之既定距離,並將讓設置於光束塑型遮罩1的1個開口4通過之1道雷射光L照射至薄膜15,來形成複數開口圖案20。 As described above, the formation of the plurality of opening patterns 20 is to use the camera 12 to photograph the unit pattern of the unit area where the laser processing starts, for example, the reference pattern provided on the reference substrate 16 corresponding to the center position, and after confirming the position of the reference pattern Then, the step of moving the XY stage 6 in the X and Y directions based on the position of the reference pattern is performed. At this time, a predetermined predetermined distance can be stepwise moved based on the mechanical accuracy of the XY stage, and a plurality of opening patterns 20 can be formed in each unit area, or the camera 12 can also be used to capture the corresponding central position of each unit area and set as a reference Substrate 16 The reference pattern is that after the reference pattern locates, for example, the shooting center of the photographing camera 12 (which coincides with the optical axis of the objective lens 10), a plurality of aperture patterns 20 are laser processed. Further, the XY stage 6 can be moved stepwise by a predetermined predetermined distance, and a laser light L passing through an opening 4 provided in the beam shaping mask 1 can be irradiated to the film 15 to form a plurality of opening patterns 20.

另外,上述實施形態中,雖已就於XY之二維方向移動XY台6的情況來加以說明,但本發明並不被限定於此,亦可移動包含對物透鏡10之雷射光學單元側,或亦可相對地移動台及雷射光學單元兩者。 In addition, in the above embodiment, the case where the XY stage 6 is moved in the two-dimensional direction of XY has been described, but the present invention is not limited to this, and the laser optical unit side including the objective lens 10 can also be moved Or, both the stage and the laser optical unit can be moved relatively.

又,上述實施形態中,雖已就被加工物為樹脂製薄膜15的情況來加以說明,但本發明並不被限定於此,被加工物亦可為層積有設置至少內包有一個該開口圖案20之大小的貫穿孔之金屬遮罩,以及樹脂製薄膜15的層積體之該薄膜15。或者,被加工物亦可為薄片狀金屬箔。 In addition, in the above embodiment, the case where the object to be processed is the resin film 15 has been described, but the present invention is not limited to this, and the object to be processed may be laminated and provided at least one of the The metal mask of the through hole of the size of the opening pattern 20 and the film 15 of the laminate of the resin film 15. Alternatively, the workpiece can be a thin metal foil.

Claims (7)

一種光束塑型遮罩,係具有雷射加工於被加工物之孔的形狀之相似形開口的光束塑型遮罩,其中該開口係形成為具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可藉由雷射光之複數照射來貫穿該被加工物,以確保至少可雷射加工之最低限度的雷射強度之60%的光穿透率者。A beam shaping mask is a beam shaping mask with a similarly shaped opening laser-processed in the shape of a hole of a workpiece, wherein the opening is formed to have a light transmittance in the opening from the central portion It gradually decreases toward the peripheral edge portion, and even if the peripheral edge portion can be irradiated with a plurality of laser beams to penetrate the object to ensure at least 60% of the laser transmittance of the minimum laser intensity that can be laser processed. 如申請專利範圍第1項之光束塑型遮罩,其中該開口係縱橫排列地設置有複數個。For example, the beam shaping mask of item 1 of the patent application, wherein the openings are arranged in a plurality of vertical and horizontal directions. 如申請專利範圍第1或2項之光束塑型遮罩,其中該被加工物係樹脂製薄膜。For example, the beam shaping mask of item 1 or 2 of the patent application, wherein the object to be processed is a resin film. 一種雷射加工裝置,係將形成於光束塑型遮罩的開口縮小投影至被加工物上,而於該被加工物雷射加工出孔的雷射加工裝置,其中該光束塑型遮罩係將該開口形成為具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍可藉由雷射光之複數照射來貫穿該被加工物,以確保至少可雷射加工之最低限度的雷射強度之60%的光穿透率者。A laser processing device is a laser processing device that projects an opening formed in a beam shaping mask on a workpiece, and a laser processing hole in the workpiece, wherein the beam shaping mask is The opening is formed so that the light transmittance in the opening gradually decreases from the central portion toward the peripheral portion, and even at the peripheral portion, the workpiece can be penetrated by a plurality of laser light irradiation to ensure that at least the laser Those with a minimum laser intensity of 60% of the light transmission rate. 如申請專利範圍第4項之光束塑型遮罩,其中該被加工物係樹脂製薄膜。For example, the beam shaping mask of item 4 of the patent application, wherein the object to be processed is a resin film. 一種雷射加工方法,係將形成於光束塑型遮罩的開口縮小投影至被加工物上,而於該被加工物雷射加工出孔的雷射加工方法,其係讓複數照射之雷射光穿透以具有該開口內之光穿透率會從中央部朝向周緣部漸減,並且即便在周緣部仍藉由雷射光之複數照射來貫穿該被加工物,以可確保至少可雷射加工之最低限度的雷射強度之60%的光穿透率的方式而形成於該光束塑型遮罩的該開口;將穿透該開口之該複數照射的雷射光照射至該被加工物,來於該被加工物加工出該孔。A laser processing method is to narrow the projection of the opening formed in the beam shaping mask onto the object to be processed, and the laser processing method of laser processing the hole in the object to be processed Penetration to have the light transmittance in the opening will gradually decrease from the central portion toward the peripheral portion, and even at the peripheral portion is still penetrated through the workpiece by the plural irradiation of laser light to ensure that at least laser processing is possible Is formed in the opening of the beam shaping mask by a light transmission rate of 60% of the minimum laser intensity; the laser light irradiated through the opening is irradiated to the processed object from The workpiece is processed with the hole. 如申請專利範圍第6項之雷射加工方法,其中該被加工物係樹脂製薄膜。For example, in the laser processing method of claim 6, the object to be processed is a resin film.
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