JP2005152966A - Laser beam machining method, and blank transfer method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize an appropriate machining and blank transfer by increasing the intensity of the peripheral portion of laser beams. <P>SOLUTION: In a test apparatus 10, a mask 44 is arranged on the optical path of laser beams LB, and the laser beams passing through a mask aperture 46 the mask are irradiated on a photo-thermal conversion layer 32 of a photo-thermal conversion substrate 22. The laser beams are reflected by an inner wall 46A of the mask aperture when passing through the mask aperture, and the energy intensity of the peripheral portion of the laser beams is increased. By the heat generation of the photo-thermal conversion layer by the laser beams, a transferred material layer 28 is correctly heated at the peripheral portion of a part to be transferred to a substrate 18, and the material transfer of high quality can be realized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a laser processing method in which a processing target is heated and processed by irradiating a laser beam, and a material transfer method in which a transfer material is heated and transferred to a transfer target.

  The separation rib (so-called partition pattern) of the color filter and the black matrix of the liquid crystal display device include an image receiving element and a donor sheet provided on a base material with a transfer layer containing an image component (transfer material) transferred to the image receiving element. It is formed using a method in which the transfer layer is peeled off from the base material and transferred to the image receiving element by applying pressure in the overlapped state and heating and melting the transfer layer.

  In addition, organic light-emitting elements such as organic EL elements are sometimes used as surface light sources such as full-color displays, backlights, and illumination light sources, and light source arrays such as printers. The organic light emitting element is formed by a light emitting layer and electrodes arranged in pairs with the light emitting layer interposed therebetween, and the light emitting layer emits light by generating an electric field between the pair of electrodes.

  Such an organic light-emitting device is formed by using a donor sheet provided with an organic thin film, and transferring the organic thin film to the image receiving element by heating while applying pressure to the transfer target (image receiving element) and the donor sheet. Is done.

  By the way, when manufacturing such an organic light-emitting element, a donor sheet provided with a photothermal conversion layer is used, and the organic thin film is heated by irradiating the donor sheet with a laser beam to generate heat. A thermal image process is used to transfer to the image receiving element.

  As a manufacturing method of a color organic display using this thermal image process, a thin metal sheet is used as a base material for donor sorting, a hollow protrusion is formed on the metal sheet, and an organic EL is formed on the protrusion forming surface. A light emitting layer is deposited and pressure-bonded to a hole transport layer formed on the transparent dielectric film. In this state, a method of transferring the organic EL light emitting layer onto the hole transport layer by selectively irradiating the inside of the protrusion with laser light has been proposed (for example, refer to Patent Document 1).

  However, in the above proposal, the shape of the organic EL light emitting layer transferred to the hole transport layer, that is, the shape of the transfer pixel and the transfer position are determined by the shape and position of the protrusion. Further, in the intensity distribution of the laser beam, the light intensity at the center of the beam is high and the light intensity at the periphery is low. For this reason, by simply irradiating the protrusion with the laser beam, the protrusion has a high temperature at the center but a low temperature at the peripheral edge.

 When the temperature is low, the organic EL light emitting layer is difficult to peel off from the substrate. For this reason, when the temperature of the peripheral portion of the protrusion is low, the organic EL light emitting layer facing the peripheral portion is difficult to peel off from the base material. Then, the organic EL light emitting layer is peeled off from the base material in such a way that it is broken. For this reason, the organic EL light-emitting layer or the like is not necessarily transferred in a shape corresponding to the protruding portion, and a transfer pixel with a favorable peripheral edge cannot be obtained.

As one method for solving such a problem, it is conceivable that the light intensity at the peripheral portion of the laser beam is made the same as or higher than that at the central portion. As a method for obtaining such a laser intensity distribution, a method using a beam intensity distribution converting optical element such as an aspherical lens, a hologram element, or a fly-eye lens has been proposed (for example, see Patent Document 2).
Patent No. 2918037 JP 2001112679 A

  However, the transfer material to be transferred to the transfer object is not limited to a round shape and is often rectangular. For example, when forming a rectangular laser beam, the beam intensity of an aspheric lens, hologram element, fly-eye lens, etc. Using the distribution conversion optical element to bias the energy intensity toward the periphery of the laser beam has the problem that the design of the beam intensity distribution conversion optical element becomes complicated and the optical component becomes expensive. is there.

  The present invention has been made in view of the above-mentioned facts, and uses a simple optical component, a laser processing method capable of processing a high-quality material at low cost with a laser beam, and a material transfer method capable of material transfer The purpose is to propose.

  In order to achieve the above object, the laser processing method of the present invention is a laser processing method for processing by irradiating a processing target with laser light oscillated by an oscillating means and heating the processing target. A mask provided with a mask hole formed with a predetermined thickness by a reflective material and having an opening smaller than the beam diameter of the laser beam is disposed on the optical path of the laser beam to irradiate the workpiece, and the mask hole is The laser beam that has passed is irradiated onto the object to be processed.

  In the material transfer method of the present invention, a light-to-heat conversion layer that absorbs laser light and generates heat by heating the transfer material is disposed on the transfer material that is pressed onto the transfer material transfer target. A material transfer method for heating the transfer material by irradiating the laser beam oscillated by an oscillating means and transferring the material to a transfer object, wherein the laser beam is formed with a predetermined thickness by a reflecting material of the laser beam, A mask provided with a mask hole having an opening smaller than the beam diameter of the light is disposed on the optical path of the laser light that irradiates the object to be processed, and the laser light that has passed through the mask hole is transferred to the photothermal heat on the transfer material. The transfer material layer is heated by irradiating the conversion layer, and transferred to the transfer target.

  According to the present invention, a mask is disposed on the optical path of the laser beam, and the laser beam that has passed through the mask hole formed in the mask is irradiated to the object to be processed or the photothermal conversion layer that heats the transfer material.

  At this time, by forming the mask with a predetermined thickness, reflection of the laser beam occurs on the inner wall surface of the mask hole. Thereby, the laser beam that has passed through the mask hole has a high energy intensity at the beam periphery. That is, it is possible to easily increase the energy intensity of the laser beam edge without using expensive optical components.

  For such a mask applied to the present invention, various metal materials such as stainless steel, copper, titanium, iron, nickel, chromium, and aluminum can be used. Also, the mask uses a member that transmits laser light, such as quartz glass, and the various metals are vapor-deposited on this member to form a thin film so that reflection of the laser light occurs on the inner wall of the mask hole. It may be what you did.

  In the laser processing method of the present invention, the thickness of the mask is set to 0.05 mm or more, preferably 0.1 mm or more. The material transfer method of the present invention includes the mask thickness of At least 0.2 mm or more, preferably 0.3 mm or more is preferable.

  In the present invention, since the reflection area of the laser beam is increased by increasing the thickness of the mask, the energy intensity of the laser beam edge can be increased.

  Here, by setting the thickness of the mask to 0.05 mm or more, and preferably 0.1 mm or more, at least the intensity at the center of the beam and the intensity at the periphery of the beam can be made equal to or greater, and laser light is used. It is preferable when processing a processing target.

  Further, by setting the mask thickness to 0.2 mm or more, preferably 0.3 mm or more, the strength of the beam peripheral portion can be made higher than the center of the beam. The peripheral edge of the transfer material to be transferred can be reliably melted.

  The material transfer method of the present invention is characterized in that the mask hole is formed in a shape matching the minimum shape of the transfer material to be transferred to the transfer target.

  According to the present invention, the laser beam can be irradiated in a shape corresponding to the transfer material to be transferred to the transfer target, so that the transfer material can be reliably transferred to the transfer target in a desired shape.

  As described above, according to the present invention, the mask is arranged on the optical path of the laser beam, and the photothermal conversion layer that heats the workpiece or the transfer material is irradiated with the laser beam that has passed through the mask hole of the mask. As a result, an excellent effect is obtained that desired processing and material transfer can be performed by irradiating the processing target and the photothermal conversion layer with laser light having increased energy intensity at the beam peripheral portion.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration of a test apparatus 10 to which the present invention is applied. This test apparatus 10 is applied as a material transfer apparatus that superimposes a donor sheet provided with a transfer material and a transfer target and heats the transfer material while applying pressure to transfer the heated portion of the transfer material to the transfer target. It is possible.

  The test apparatus 10 includes a processing table 12 and a laser oscillator 14 that emits a laser beam LB having a predetermined wavelength. The processing table 12 is provided on the moving unit 16, and the moving unit 16 moves the processing table 12 horizontally. That is, the processing table 12 is an XY table that is moved by the moving unit 16 along the X direction (for example, the front and back direction in FIG. 1) and the Y direction (for example, the left and right direction in FIG. 1).

  On the processing table 12, a substrate 18 to be transferred and a donor substrate 20 to be a donor sheet are placed in an overlapping manner. In the test apparatus 10, the photothermal conversion substrate 22 is stacked on the donor substrate 20. That is, in the test apparatus 10, the substrate 18, the donor substrate 20, and the photothermal conversion substrate 22 are sequentially stacked and placed on the processing table 12.

  Note that the test apparatus 10 can perform processing such as half-cut using the laser beam LB. At this time, the processing target 12 is replaced with the substrate 18, the donor substrate 20, and the photothermal conversion substrate 22. The substrate 24 is placed on the substrate 18.

  In the test apparatus 10, the substrate 18 used as a transfer target is formed of, for example, a resin material such as PET, blue glass, or the like. As shown in FIGS. 1 and 2, the donor substrate 20 used as a donor sheet has a transfer material layer 28 formed on one surface of a base material 26 formed into a sheet shape from PET, quartz glass, blue plate glass, or the like. doing. The transfer material layer 28 is formed using, for example, an organic EL light-emitting material as a transfer material, and melts when heated, so that the melted portion is easily peeled off.

  The donor substrate 20 is placed on the substrate 18 so that the transfer material layer 28 faces the substrate 18. Thereby, the transfer material 30 forming the transfer material layer 28 of the donor substrate 20 can be transferred to the substrate 18.

  The laser oscillator 14 (see FIG. 1) emits a laser beam LB having a predetermined wavelength. As shown in FIG. 1, the laser beam LB is reflected by the reflection mirror 32 and the like, and is applied to the uppermost photothermal conversion substrate 22 placed on the processing table 12.

  The laser oscillator 14 applied to the present embodiment emits an excimer laser having a wavelength of 238 nm as an example. An excimer laser is produced based on ultraviolet light when argon and fluorine are reacted, and is a laser beam with high energy.

  As shown in FIGS. 1 and 2, the photothermal conversion substrate 22 has a photothermal conversion layer 36 formed on one surface of a transparent substrate 34. The transparent base material 34 is formed into a sheet shape or a thin plate shape using, for example, quartz glass, blue plate glass, or the like that is highly transmissive to the laser beam LB oscillated by the laser oscillator 14. The photothermal conversion layer 36 is made of, for example, a material having high absorbability with respect to the laser beam LB irradiated by the laser oscillator 14, such as nickel, chromium, or aluminum, on one surface of the transparent substrate 34. It is a thin deposited film formed by vapor deposition. That is, in the photothermal conversion substrate 22, a nickel vapor deposition layer, a chromium vapor deposition layer, an aluminum vapor deposition layer, or the like is used as the photothermal conversion layer 36.

  The photothermal conversion substrate 22 is overlaid on the donor substrate 20 with the photothermal conversion layer 36 facing the donor substrate 20.

  As a result, the laser beam LB emitted from the laser oscillator 14 is irradiated onto the photothermal conversion substrate 22, so that the laser beam LB passes through the transparent base material 34 and reaches the photothermal conversion layer 36. The energy of the beam LB is absorbed by the photothermal conversion layer 36.

  The photothermal conversion layer 36 irradiated with the laser beam LB generates heat by absorbing the energy of the laser beam LB. As a result, the transfer material layer 28 at a portion facing the photothermal conversion layer 36 irradiated with the laser beam LB is heated and melted, and is easily peeled off from the substrate 26.

  At this time, since the processing table 12 can be moved horizontally by the moving unit 16, the test apparatus 10 can heat the transfer material layer 28 at an arbitrary position on the processing table 12.

  On the other hand, the test apparatus 10 is provided with a clamp 38. The clamp 38 is formed by an air cylinder 40 and a holding plate 42 attached to the rod 40 </ b> A of the air cylinder 40 so as to face the peripheral portion of the photothermal conversion substrate 22.

  In the test apparatus 10, the photothermal conversion substrate 22 is pressed toward the processing table 12 by extending the rod 40 </ b> A in a state where the substrate 18, the donor substrate 20, and the photothermal conversion substrate 22 are stacked on the processing table 12.

  Thereby, the space between the substrate 18 and the transfer material layer 28 disposed between the processing table 12 and the photothermal conversion substrate 22 is pressurized with a predetermined pressure. The clamp 38 is moved integrally with the processing table 12 by the operation of the moving unit 16.

  When the transfer material layer 28 is heated and melted in a pressurized state, the melted portion is peeled off from the base material 26 and transferred onto the substrate 18. As a result, a transfer pixel to which the transfer material 30 for forming the transfer material layer 28 is transferred is formed on the substrate 18 (not shown in FIGS. 1 and 2).

The pressurizing means is not limited to the clamp 38, and any configuration can be applied. In the test apparatus 10, for example, a cooling means is provided on the processing table 12 to cool the substrate 18, the donor substrate 20, and the photothermal conversion substrate 22, and to prevent the heat of the photothermal conversion layer 36 from unnecessarily spreading. It may be.
By the way, as shown in FIGS. 1 and 2, the test apparatus 10 is provided with a mask 44 on the optical path of the laser beam LB. The mask 44 is made of a metal material that reflects the laser beam LB, such as stainless steel, copper, titanium, iron, nickel, chromium, and aluminum, and is formed in a thin plate shape having a predetermined thickness T.
As shown in FIG. 1, a mask hole 46 is formed in the mask 40. The mask hole 46 is opened in accordance with the shape of the transfer material 30 to be transferred to the substrate 18. The mask 44 can be formed using a material that transmits the laser beam LB, such as quartz glass. At this time, a material that reflects the laser beam LB is deposited, so that the laser beam LB is reflected at least around the mask hole 46 irradiated with the laser beam LB and at the inner wall 46A of the mask hole 46. That's fine.

  In the test apparatus 10, the laser oscillator 14 emits a laser beam LB so as to be condensed on the photothermal conversion layer 36 of the photothermal conversion substrate 22.

  As shown in FIG. 3, the opening width D of the mask hole 46 is smaller than the beam diameter d of the laser beam LB in the vicinity of the mask 40.

  As a result, the laser beam LB emitted from the laser oscillator 14 is irradiated onto the photothermal conversion layer 32 of the photothermal conversion substrate 22 with the peripheral edge of the beam cut (see FIG. 2).

  Further, when the laser beam LB passes through the mask hole 46 of the mask 44, it is reflected by the inner wall 46 </ b> A of the mask hole 46, or diffraction occurs at the edge portion of the edge of the mask hole 46.

  Thereby, in the test apparatus 10, the intensity | strength of the laser beam LB irradiated to the photothermal conversion layer 36 is made high. That is, as shown in FIG. 3, the intensity of the beam peripheral portion corresponding to the peripheral portion of the mask hole 46 is increased in the laser beam LB that has passed through the mask hole 46, although the intensity of the beam center C does not change.

  In the test apparatus 10, the thickness T of the mask 44 is set so as to increase the reflection amount of the laser beam LB at the inner wall 46 </ b> A of the mask hole 46.

  In the test apparatus 10 configured as described above, when the substrate 18, the donor substrate 20, and the photothermal conversion substrate 22 are sequentially stacked on the processing table 12, the substrate 18, the donor substrate 22, and the photothermal conversion are clamped by the clamp 38. The substrate 22 is integrally fixed on the processing table 12. At this time, the space between the transfer material layer 28 provided on the donor substrate 20 and the substrate 18 is pressurized with a predetermined pressure.

  In this state, the uppermost photothermal conversion substrate 22 is irradiated with the laser beam LB emitted from the laser oscillator 14.

  The photothermal conversion substrate 22 is formed by a transparent base material 34 and a photothermal conversion layer 36, and the laser beam LB passes through the transparent base material 34 and is absorbed by the photothermal conversion layer 36. As a result, the photothermal conversion layer 36 generates heat at the portion irradiated with the laser beam LB and heats the transfer material layer 28 facing this portion.

  The transfer material layer 28 is melted by being heated and easily peeled off from the substrate 26. At this time, since the space between the substrate 18 and the transfer material layer 28 is pressurized, the transfer material 30 of the transfer material layer 28 heated and melted is peeled off from the base material 26 and transferred to the substrate 18.

  In the test apparatus 10, the irradiation position of the laser beam LB on the photothermal conversion substrate 22 can be moved by moving the processing table 12 by the moving unit 16. Thereby, the transfer material 30 can be transferred to a desired position on the substrate 18.

  Therefore, for example, by using one transfer material 30 as a transfer pixel, and using image data such as bitmap data based on the transfer pattern of the transfer material 30 to the substrate 18, the laser oscillator 14 and the moving unit 16. By controlling the operation, the transfer material 30 can be transferred according to the transfer pattern.

  Incidentally, the intensity of the laser beam LB has a Gaussian distribution in which the beam center is high and the beam periphery is low. Further, when the heating temperature is low, the transfer material layer 28 is difficult to peel off from the base material 26, and the transfer material 30 is hardly broken.

  Therefore, in the normal Gaussian-distributed laser beam LB, the transfer material layer 28 facing the periphery of the beam is not sufficiently heated, and the transfer material 30 is not transferred in a desired size, or the transfer material 30 is thin. A poorly cut transfer pixel is formed.

  Here, in the test apparatus 10, a mask 44 having a predetermined thickness T in which the mask hole 46 is formed is disposed on the optical path of the laser beam LB, and the laser beam LB having passed through the mask hole 46 of the mask 44 is subjected to photothermal conversion. The substrate 22 is irradiated.

  The mask hole 46 at this time is an opening corresponding to the shape of the transfer material 30 (transfer pixel) transferred to the substrate 18, and the beam diameter d of the laser beam LB is larger than the opening width D of the mask hole 42. Slightly larger.

  As a result, the laser beam LB is cut at the periphery of the beam, and the photothermal conversion layer 36 is heated in a region matching the shape of the transfer material 30 to be transferred to the substrate 18.

  The mask 44 is formed with a predetermined thickness T, and the reflection of the laser beam LB occurs on the inner wall 46A of the mask hole 46 corresponding to the thickness T.

  As a result, as shown in FIG. 3, the laser beam LB that has passed through the mask hole 46 has an increased intensity at the periphery of the beam, and the periphery of the transfer material layer 28 transferred to the substrate 18 is sufficiently heated and melted. be able to.

  Here, in FIGS. 4A and 4B, a laser processing substrate 24 formed of PET or the like is disposed on the processing table 12, and the laser beam LB that has passed through the mask 44 on the substrate 24. The test results when irradiating and half-cutting are shown. The mask hole 46 is formed by opening the mask 44 in a rectangular shape.

  The substrate 24 is heated by the energy of the laser beam LB when irradiated with the laser beam LB, and melt transpiration occurs. At this time, the recess 50 is formed with a depth corresponding to the energy amount of the laser beam LB.

  In general, when a laser beam having a Gaussian beam intensity is used, a concave portion having a deep central portion and a shallow peripheral portion is formed on the substrate 24 (not shown). Further, since the laser beam forms a circular spot, the concave portion formed in the substrate 24 is also circular.

  On the other hand, in the test apparatus 10, as shown in FIG. 4A, a rectangular recess 50 corresponding to the mask hole 46 (not shown) of the mask 44 is generated on the substrate 24. Further, as shown in FIG. 4B, in the substrate 24, the peripheral portion of the concave portion 50 is processed at the same depth as the central portion.

  As described above, by using the mask 44 having the predetermined thickness T in which the mask hole 46 is formed, the laser beam LB can have a desired intensity distribution, and thereby, when the half cut of the substrate 24 or the like is performed. The processing accuracy can be improved.

  On the other hand, by changing the beam shape and intensity distribution of the laser beam LB, the transfer material layer 28 can be transferred to the substrate 18 in a desired shape, so that transfer pixels of the transfer material 30 can be formed on the substrate 18. At this time, the transfer material 30 is well cut and high-quality transfer is possible.

  The intensity of the peripheral portion of the laser beam LB that passes through the mask hole 46 of the mask 44 and is applied to the photothermal conversion substrate 22 (photothermal conversion layer 28) varies according to the thickness T of the mask 44.

  Here, in FIGS. 5 to 9, when the thickness T of the mask 44 is changed, the intensity distribution (beam profile) of the laser beam LB irradiated to the photothermal conversion layer 28 and the substrate 18 are transferred. The measurement result of the shape of the transfer material 30 (hereinafter referred to as transfer pixel 52) is shown. Table 1 also shows the releasability of the transfer material layer 28 (transfer material 30) from the base material 26 on the donor substrate 20 when the transfer material 30 is transferred to the substrate 18, and the transfer material 30 to be transferred onto the substrate 18. 3 shows a result of determining whether to cut from the transfer material layer 28.

  The thickness T of the mask 40 is set to 0.0004 mm (0.4 μm: FIG. 5), 0.1 mm (FIG. 6), 0.3 mm (FIG. 7), 0.5 mm (FIG. 8), and 1.0 mm. (FIG. 9).

In addition, the judgment criteria (determination results) for peelability and tearing are:
◎: Peeling and cutting is possible with 95% or more sample ○: Peeling and cutting is possible with 80% or more sample △: Peeling and cutting is possible with 50% or more sample ×: With 90% or more sample Peeling and cutting is impossible.

  Further, in FIGS. 5 to 9, the intensity of the laser beam LB and the thickness of the transfer pixel 52 are shown as relative values, and the intensity of the opening edge position of the mask hole 42 with respect to the intensity p and thickness t of the beam center (beam center) C and The ratio of thickness is shown.

  As shown in FIG. 5 and Table 1, when the thickness T of the mask 44 is 0.0001 mm (0.1 μm), the beam intensity at the periphery of the laser beam LB is slightly increased, but the beam center Low compared to For this reason, the transfer pixel 52 formed by the transfer material 30 transferred to the substrate 18 has a smaller thickness t at the portion facing the peripheral edge of the mask hole 46 than the center of the beam, and is easy to peel off and torn off. Is also low.

  On the other hand, as shown in FIG. 6 and Table 1, when the thickness T of the mask 44 is set to 0.1 mm, the beam intensity at the peripheral edge of the beam LB increases to approximately the same level as the beam center. Thereby, the thickness of the transfer pixel 52 facing the peripheral position of the mask hole 46 is also increased, and the peelability and tearability of the transfer material 30 are improved.

  Further, as shown in FIG. 7 and Table 1, when the thickness T of the mask 40 is 0.3 mm, the intensity of the peripheral edge of the laser beam LB becomes larger than the intensity of the beam center C, and the laser beam LB The thickness of the transfer pixel 52 with respect to the peripheral edge of the film increases, and good peelability and tearability are obtained.

  Further, as shown in FIG. 8 and Table 1, when the thickness T of the mask 44 is set to 0.5 mm, the intensity of the beam peripheral edge of the laser beam LB becomes further larger than the intensity of the beam center C, and the laser The thickness of the transfer pixel 52 with respect to the peripheral edge portion of the beam LB also increases. Thereby, very good peelability is obtained.

  Further, as shown in FIG. 9 and Table 1, when the thickness T of the mask 44 is 1.0 mm, the intensity of the peripheral portion of the laser beam LB is about twice the intensity of the beam center C, and the laser beam The thickness of the transfer pixel 52 with respect to the beam peripheral edge of LB is substantially the same as the thickness of the beam center C. That is, extremely good peelability and tearability are obtained, and the transfer pixel 52 having a good edge cut is formed.

  As described above, even if the mask 44 has a thickness T of 0.0004 mm, the intensity of at least the beam peripheral edge of the laser beam LB can be increased by using the mask 44. Further, by using the mask 44 having a thickness T of 0.05 mm or more, the intensity can be made substantially flat between the beam center C and the beam peripheral portion. Thereby, it is possible to improve workability and processing quality when processing such as half-cutting is performed using the laser beam LB.

  Further, by using the mask 44 having a thickness T of 0.2 mm or more, good transferability can be obtained when the transfer material 30 is transferred to the substrate 18, and the mask 44 having a thickness T of 0.7 mm or more. By using this, it is possible to form the transfer pixel 52 with a good edge cut on the substrate 18. That is, by setting the thickness T of the mask 44 to 0.7 mm or more, high-quality image transfer can be performed.

  The thickness T of the mask 44 is not limited to the above range, and a mask 44 having an arbitrary thickness can be used. However, energy attenuation may occur when the laser beam LB is reflected by the inner wall 46A. From this, it is more preferable to set the thickness T of the mask 44 together with the output of the laser oscillator so that a desired intensity and intensity distribution (beam profile) can be obtained on the object to be processed and the photothermal conversion layer.

  In addition, this Embodiment demonstrated above does not limit the structure of this invention. For example, in the present embodiment, a metal material that reflects the laser beam LB such as stainless steel, copper, titanium, iron, nickel, chromium, and aluminum is used as the mask 44. However, the laser beam LB such as quartz glass is transmitted. It can be formed using a material. At this time, a material that reflects the laser beam LB is deposited, for example, so that the laser beam LB is reflected at least around the mask hole 46 irradiated with the laser beam LB and at the inner wall 46A of the mask hole 46. That's fine.

  In the embodiment, the laser oscillator 14 that emits an excimer laser having a wavelength of 238 nm has been described. However, the present invention is not limited to this, and the present invention is applicable to processing using various laser beams having arbitrary wavelengths and material transfer. can do.

It is a schematic block diagram of the test apparatus applied to this Embodiment. It is the schematic of the principal part of a test apparatus. It is the schematic for the intensity | strength of the laser beam which passed the mask through which the laser beam passes, and the mask. (A) is a schematic plan view which shows the principal part of the board | substrate which gave the half cut, (B) is a schematic sectional drawing of the principal part of the board | substrate along 4B-4B line | wire of FIG. 4 (A). It is the schematic of the intensity distribution of the laser beam which passed the mask whose thickness is 0.0004 mm, and the transfer pixel formed with this laser beam. It is the schematic of the intensity distribution of the laser beam which passed the mask whose thickness is 0.1 mm, and the transfer pixel formed by this laser beam. It is the schematic of the intensity distribution of the laser beam which passed the mask whose thickness is 0.3 mm, and the transfer pixel formed with this laser beam. It is the schematic of the intensity distribution of the laser beam which passed the mask whose thickness is 0.5 mm, and the transfer pixel formed by this laser beam. It is the schematic of the intensity distribution of the laser beam which passed the mask with a thickness of 1.0 mm, and the transfer pixel formed by this laser beam.

Explanation of symbols

10 Test Equipment 12 Processing Table 14 Laser Oscillator 18 Substrate (Transfer Target)
20 Donor substrate 22 Photothermal conversion substrate 24 Substrate (object to be processed)
28 Transfer Material Layer 30 Transfer Material 34 Transparent Base Material 36 Photothermal Conversion Layer 38 Clamp 44 Mask 46 Mask Hole 46A Inner Wall 50 Concave 52 Transfer Pixel

Claims (5)

A laser processing method of processing by irradiating a processing target with laser light oscillated by an oscillation means and heating the processing target,
A mask provided with a mask hole formed with a predetermined thickness by the laser beam reflecting material and having an opening smaller than the beam diameter of the laser beam is disposed on the optical path of the laser beam that irradiates the workpiece, A laser processing method characterized by irradiating the processing target with laser light that has passed through a mask hole. A photothermal conversion layer that absorbs laser light and generates heat to heat the transfer material is placed on the transfer material that is superimposed and pressed on the transfer material transfer target, and the laser light oscillated by the oscillation means is placed on the transfer material. A material transfer method for heating the transfer material by irradiating and transferring it to a transfer target,
A mask provided with a mask hole formed with a predetermined thickness by the laser beam reflecting material and having an opening smaller than the beam diameter of the laser beam is disposed on the optical path of the laser beam that irradiates the workpiece, A material transfer method comprising heating the transfer material layer by irradiating the light-to-heat conversion layer on the transfer material with laser light that has passed through a mask hole, and transferring the transferred material layer to the transfer target.   The laser processing method according to claim 1, wherein the thickness of the mask is 0.05 mm or more, preferably 0.1 mm or more.   3. The material transfer method according to claim 2, wherein the thickness of the mask is at least 0.2 mm or more, preferably 0.3 mm or more.   5. The material transfer method according to claim 2, wherein the mask hole is formed in a shape corresponding to a minimum shape of the transfer material to be transferred to the transfer target.

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