JP2018060881A - Carrier pad and carrying method of wafer - Google Patents

Carrier pad and carrying method of wafer Download PDF

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JP2018060881A
JP2018060881A JP2016196281A JP2016196281A JP2018060881A JP 2018060881 A JP2018060881 A JP 2018060881A JP 2016196281 A JP2016196281 A JP 2016196281A JP 2016196281 A JP2016196281 A JP 2016196281A JP 2018060881 A JP2018060881 A JP 2018060881A
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air
wafer
holding surface
flow rate
groove
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JP6814009B2 (en
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敦 中塚
Atsushi Nakatsuka
敦 中塚
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2016196281A priority Critical patent/JP6814009B2/en
Priority to TW106130305A priority patent/TWI723212B/en
Priority to CN201710864989.4A priority patent/CN107895708B/en
Priority to KR1020170123523A priority patent/KR102315301B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H01L21/6779—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks the workpieces being stored in a carrier, involving loading and unloading
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

PROBLEM TO BE SOLVED: To allow for contact holding and non-contact holding of a wafer by means of a carrier pad, without changing the carrier pad and a piping route, when carrying a wafer by means of the carrier pad.SOLUTION: A carrier pad includes an air exhaust nozzle 100 formed in a holding surface 10b and exhausting air along the holding surface 10b, and a groove 101 for flowing the air, exhausted from the air exhaust nozzle 100, in a straight line along the outer peripheral edge of the holding surface 10b. A wafer is held on the holding surface 10b by flowing air to the groove 101, and adjusting a negative pressure generated around the groove 101 by the flow rate of the air flowed to the groove 101.SELECTED DRAWING: Figure 1

Description

本発明は、ウエーハを保持する板状の搬送パッド及び搬送パッドを用いたウエーハの搬送方法に関する。   The present invention relates to a plate-shaped transport pad for holding a wafer and a wafer transport method using the transport pad.

半導体ウエーハ等を加工する切削装置や研削装置等においては、例えば、ウエーハの加工前に、加工装置の位置決め機構に載置されたウエーハを保持テーブル上に搬送したり、ウエーハの加工後に、保持テーブル上の加工が施されたウエーハをウエーハ洗浄機構のスピンナーテーブルに搬送したりしている。そして、加工装置には、ウエーハを搬送する搬送パッドが配設されており、この搬送パッドは、例えば、ウエーハに接触させて吸引保持を行う保持面を備えている。この保持面は、例えば、ポーラス部材で構成されていたり、又は複数の吸引孔が形成されていたりし、真空発生装置等から構成される吸引源とコンプレッサー等から構成されるエア供給源とにエアの流路を切り替え可能に連通している（例えば、特許文献１参照）。   In a cutting apparatus or a grinding apparatus that processes a semiconductor wafer or the like, for example, a wafer placed on a positioning mechanism of a processing apparatus is transported onto a holding table before the wafer is processed, or a holding table is processed after the wafer is processed. The wafer subjected to the above processing is transferred to a spinner table of a wafer cleaning mechanism. The processing apparatus is provided with a transport pad for transporting the wafer, and the transport pad includes, for example, a holding surface that performs suction holding while being in contact with the wafer. This holding surface is made of, for example, a porous member or formed with a plurality of suction holes, and air is supplied to a suction source constituted by a vacuum generator or the like and an air supply source constituted by a compressor or the like. These channels are communicated so as to be switchable (see, for example, Patent Document 1).

搬送パッドの保持面をウエーハに接触させた状態で、吸引源が吸引することで生み出された吸引力がエアの流路を介して保持面上に伝達されることで、搬送パッドはウエーハを吸引保持することができる。搬送パッドの保持面からウエーハを離脱させるときは、吸引源と保持面とが連通している状態をエア供給源と保持面とが連通している状態へと切り替えて、エア供給源からエアを保持面に対して供給し保持面から少量のエアを噴出させる。そして、エアの噴射圧力によって保持面とウエーハとの間の真空吸着力を破壊して、ウエーハを保持面から離脱させている。   With the holding surface of the transport pad in contact with the wafer, the suction force generated by suction by the suction source is transmitted to the holding surface via the air flow path, so that the transport pad sucks the wafer. Can be held. When detaching the wafer from the holding surface of the transfer pad, switch the state where the suction source and the holding surface are in communication to the state where the air supply source and the holding surface are in communication, and remove air from the air supply source. Supply to the holding surface and eject a small amount of air from the holding surface. Then, the vacuum suction force between the holding surface and the wafer is broken by the air injection pressure, and the wafer is separated from the holding surface.

特開２０１４−２０４０８９号公報JP 2014-204089 A

加工装置において、搬送パッドでウエーハを非接触状態で保持したい場合には、上記の接触式で吸引保持を行う搬送パッドを、ベルヌーイ効果を利用して負圧を生み出し非接触でウエーハを吸引保持する搬送パッドに取り替える。そして、エア供給源と非接触式の搬送パッドの保持面とを連通させて、エア供給源からエアを保持面に対して供給し、保持面から所定量のエアを吹き出させ、保持面に沿ってエアを流す。このエアの流れ（例えば、旋回流）によって保持面上に負圧が発生するため、搬送パッドがウエーハを非接触で保持する。   In a processing apparatus, when it is desired to hold a wafer in a non-contact state with a transfer pad, the transfer pad that performs suction holding by the above contact type generates negative pressure by using the Bernoulli effect and sucks and holds the wafer in a non-contact manner. Replace with transport pad. Then, the air supply source is communicated with the holding surface of the non-contact type transport pad, air is supplied from the air supply source to the holding surface, a predetermined amount of air is blown from the holding surface, and along the holding surface. Air. Since negative pressure is generated on the holding surface by this air flow (for example, swirl flow), the transport pad holds the wafer in a non-contact manner.

しかし、搬送パッドの取替えに伴って、接触式搬送パッドに供給すべきエアの流量（例えば、ウエーハ離脱時に搬送パッドに供給すべきエア流量）と非接触式搬送パッドに供給すべきエアの流量とは異なってくる、すなわち、非接触式搬送パッドに供給すべきエアの流量はより多くなる。そのため、搬送パッドにエアを供給する配管の管径も太くする、つまり、加工装置内等を通り搬送パッドに繋がる配管経路を予め複数備えておく等して、配管経路を搬送パッドの取替えと共に変更する必要が生じてくる。しかし、搬送パッドのために複数の配管経路を備える装置構成は複雑であり、また、装置構成が大きくなってしまうという問題がある。   However, as the transfer pad is replaced, the flow rate of air to be supplied to the contact-type transfer pad (for example, the flow rate of air to be supplied to the transfer pad when the wafer is detached) and the flow rate of air to be supplied to the non-contact transfer pad Are different, that is, the flow rate of air to be supplied to the non-contact type transport pad is larger. Therefore, the pipe diameter of the pipe that supplies air to the transfer pad is also increased, that is, the pipe path is changed along with the replacement of the transfer pad by, for example, preparing a plurality of pipe paths that are connected to the transfer pad through the processing device etc. It becomes necessary to do. However, the apparatus configuration including a plurality of piping paths for the transport pad is complicated, and there is a problem that the apparatus configuration becomes large.

したがって、搬送パッドでウエーハを搬送する場合においては、搬送パッド及び配管経路を変更することなく、搬送パッドによるウエーハの接触保持と非接触保持とを可能にするという課題がある。   Therefore, when the wafer is transported by the transport pad, there is a problem that the wafer can be held and non-contacted by the transport pad without changing the transport pad and the piping path.

上記課題を解決するための本発明は、保持面でウエーハを保持する板状の搬送パッドであって、該保持面に形成され該保持面に沿ってエアを噴出するエア噴出口と、該エア噴出口から噴出されたエアを該保持面の外周縁に向かって直線状に流す溝と、を備え、該溝にエアを流すことで該溝の周囲に発生させる負圧の強弱を該溝に流すエアの流量で調整して該保持面でウエーハを保持する搬送パッドである。   The present invention for solving the above-mentioned problems is a plate-shaped transport pad that holds a wafer on a holding surface, and is formed on the holding surface and ejects air along the holding surface; A groove for flowing the air ejected from the ejection port in a straight line toward the outer peripheral edge of the holding surface, and the strength of the negative pressure generated around the groove by flowing the air in the groove. It is a transport pad that adjusts the flow rate of air to flow and holds the wafer on the holding surface.

また、上記課題を解決するための本発明は、前記搬送パッドを用いたウエーハの搬送方法であって、該搬送パッドには、前記エア噴出口から噴出させ前記溝に流すエアの流量を第１のエア流量と該第１のエア流量より多い流量の第２のエア流量とに調節可能な流量調節部が接続され、該搬送パッドは、前記保持面によりウエーハを非接触で保持する時には、該第１のエア流量のエアを該溝に流し、該保持面にウエーハを接触させて該保持面によりウエーハを保持する時には、該第２のエア流量のエアを該溝に流すことで、ウエーハの非接触保持と接触保持とを選択的に行うウエーハの搬送方法である。   In addition, the present invention for solving the above-described problem is a method for transporting a wafer using the transport pad, wherein the transport pad has a first flow rate of air that is ejected from the air ejection port and flows into the groove. And a second air flow rate that is higher than the first air flow rate is connected to the second air flow rate, and the transfer pad holds the wafer in a non-contact manner by the holding surface. When the wafer is held by the holding surface by causing the air having the first air flow rate to flow into the groove and bringing the wafer into contact with the holding surface, This is a wafer conveyance method that selectively performs non-contact holding and contact holding.

本発明に係る搬送パッドは、保持面に形成され保持面に沿ってエアを噴出するエア噴出口と、エア噴出口から噴出されたエアを保持面の外周縁に向かって直線状に流す溝と、を備え、溝にエアを流すことで溝の周囲に発生させる負圧の強弱を溝に流すエアの流量で調整して保持面でウエーハを保持することができるため、エアの流量を調節するだけで、ウエーハの接触保持と非接触保持とを選択的に行うことができる。   The transport pad according to the present invention includes an air outlet that is formed on the holding surface and ejects air along the holding surface, and a groove that linearly flows the air ejected from the air outlet toward the outer periphery of the holding surface. The flow rate of air can be adjusted by adjusting the flow rate of negative pressure generated around the groove by flowing air in the groove with the flow rate of air flowing in the groove to hold the wafer on the holding surface. The wafer can be selectively held in contact and non-contact.

本発明に係るウエーハの搬送方法においては、本発明に係る搬送パッドには、エア噴出口から噴出させ溝に流すエアの流量を第１のエア流量と第１のエア流量より多い流量の第２のエア流量とに調節可能な流量調節部が接続され、搬送パッドは、保持面によりウエーハを非接触で保持する時には、第１のエア流量のエアを溝に流し、保持面にウエーハを接触させて保持面によりウエーハを保持する時には、第２のエア流量のエアを溝に流すことで、ウエーハの非接触保持と接触保持とを選択的に行うことができる。すなわち、搬送パッドでウエーハを搬送する場合において、搬送パッド及びエアの流れる配管経路を変更することなく、エアの流量を調節するだけで搬送パッドによるウエーハの接触保持と非接触保持とを選択的に行うことができる。また、搬送パッドに吸引源を接続させる必要がなくなるため、装置構成を複雑なものとしなくても済むようになる。   In the method for transporting a wafer according to the present invention, the transport pad according to the present invention has a first air flow rate and a second flow rate greater than the first air flow rate. When the wafer is held by the holding surface in a non-contact manner, the conveyance pad allows the air of the first air flow rate to flow in the groove and the wafer is brought into contact with the holding surface. When the wafer is held by the holding surface, the non-contact holding and the contact holding of the wafer can be selectively performed by flowing the air having the second air flow rate into the groove. In other words, when a wafer is transported by a transport pad, wafer contact and non-contact hold by the transport pad can be selectively controlled by adjusting the air flow rate without changing the transport pad and the piping path through which the air flows. It can be carried out. Further, since it is not necessary to connect a suction source to the transport pad, the apparatus configuration does not have to be complicated.

保持面を上側に向けた状態の搬送パッドの一例を示す斜視図である。It is a perspective view which shows an example of the conveyance pad of the state which orient | assigned the holding surface to the upper side. 搬送パッドでウエーハを搬送する状態の一例を示す斜視図である。It is a perspective view which shows an example of the state which conveys a wafer with a conveyance pad.

半導体ウエーハ等を保持する図１に示す搬送パッド１は、例えば、アクリルやポリカーボネート、ＰＢＴ樹脂等のエンプラ又はステンレス鋼等からなり外形が円板状である本体部１０を備えている。図１においては上側を向いている本体部１０の保持面１０ｂは、ウエーハを保持する面となり、例えば、表面が平滑に仕上げられており、また、本体部１０がウエーハに接触してしまった場合に、ウエーハを傷付けないように保持面１０ｂの端部（稜線）には面取りが施されていてもよい。本体部１０の外形は、略円形状に限定されるものではなく、円形の一部を部分的に切欠いた三角十字状等に形成されていてもよい。   A transport pad 1 shown in FIG. 1 that holds a semiconductor wafer or the like includes a main body 10 that is made of, for example, an engineering plastic such as acrylic, polycarbonate, or PBT resin, stainless steel, or the like, and has an outer shape that is a disk. In FIG. 1, the holding surface 10b of the main body 10 facing upward is a surface for holding the wafer. For example, the surface is finished smooth and the main body 10 comes into contact with the wafer. In addition, the end portion (ridge line) of the holding surface 10b may be chamfered so as not to damage the wafer. The outer shape of the main body 10 is not limited to a substantially circular shape, and may be formed in a triangular cross shape in which a part of a circular shape is partially cut out.

例えば本体部１０には、保持面１０ｂに形成され保持面１０ｂに沿ってエアを噴出するエア噴出口１００と、エア噴出口１０から噴出されたエアを保持面１０ｂの外周縁に向かって直線状に流す溝１０１と、を備えている。   For example, the main body 10 has a linear shape toward the outer peripheral edge of the holding surface 10b, and an air outlet 100 formed on the holding surface 10b and ejecting air along the holding surface 10b. And a groove 101 to be passed through.

溝１０１は、例えば、保持面１０ｂの中心から径方向外側に向かって３方向に均等な角度（例えば１２０度）で放射状に延びており、保持面１０ｂから本体部１０の厚さ方向（Ｚ軸方向）の中間部に至る程度の深さを備えている。各溝１０１の幅および深さは同一寸法の一定断面を有している。なお、溝１０１の形成本数は、本実施形態における本数に限定されるものではなく、保持面１０ｂに周方向に均等な間隔で４本以上放射状に形成されていてもよい。また、溝１０１の幅を一部だけ狭めることで、この狭められた部分で溝１０１内を通るエアが加速されるものとしてもよい。各溝１０１の一方の端１０１ａは、保持部１０の外周縁において開口しており、各溝１０１の他方の端１０１ｂは、保持面１０ｂの中央に形成された各エア噴出口１００と連通している。   For example, the grooves 101 extend radially from the center of the holding surface 10b radially outward in three directions at equal angles (for example, 120 degrees), and from the holding surface 10b in the thickness direction (Z-axis) It is deep enough to reach the middle part of the direction. The width and depth of each groove 101 have a constant cross section with the same dimensions. The number of grooves 101 formed is not limited to the number in the present embodiment, and four or more grooves 101 may be radially formed on the holding surface 10b at equal intervals in the circumferential direction. Further, by narrowing the width of the groove 101 only partially, the air passing through the groove 101 may be accelerated at the narrowed portion. One end 101a of each groove 101 opens at the outer peripheral edge of the holding portion 10, and the other end 101b of each groove 101 communicates with each air outlet 100 formed in the center of the holding surface 10b. Yes.

各エア噴出口１００は、それぞれ保持面１０ｂの径方向外側に向かって開口しており、各溝１０１の他方の端１０１ｂから一方の端１０１ａに向かってエアを水平に噴出する。例えば、エア噴出口１００の断面積は溝１０１の断面積よりも大きくなっており、エア噴出口１００から溝１０１へとエアが移動する際に、エアが加速されるようになっていてもよい。また、各エア噴出口１００は、本体部１０の中央領域の内部から保持面１０ｂの反対側の面であるアーム部接続面１０ａに向かって形成されアーム部接続面１０ａ上で開口する接続口１０２と連通している。なお、本実施形態のようにエア噴出口１００を保持面１０ｂに形成するのではなく、例えば、本体部１０の保持面１０ｂに取り外し可能なノズルパッドを配設するものとし、このノズルパッドにエア噴出口１００を形成するものとしてもよい。また、例えば、本体部１０の外周縁には、ウエーハが本体部１０の面方向に移動すること（すなわち、ウエーハの横滑り）を摩擦力又はウエーハを外周面から押さえる力によって制限するガイド部１０９を設けてもよい。このガイド部１０９は、例えば、ゴム又はスポンジ等から構成されており、本体部１０の外周縁に、周方向に一定の間隔をおいて溝１０１の一方の端１０１ａとずれるようにして複数（例えば１２０度間隔で３つ）固定される。   Each air outlet 100 opens toward the radially outer side of the holding surface 10b, and jets air horizontally from the other end 101b of each groove 101 toward the one end 101a. For example, the cross-sectional area of the air spout 100 may be larger than the cross-sectional area of the groove 101, and the air may be accelerated when the air moves from the air spout 100 to the groove 101. . In addition, each air spout 100 is formed from the inside of the central region of the main body 10 toward the arm connection surface 10a that is the surface opposite to the holding surface 10b, and is open on the arm connection surface 10a. Communicated with. Instead of forming the air outlet 100 on the holding surface 10b as in the present embodiment, for example, a removable nozzle pad is provided on the holding surface 10b of the main body 10 and the nozzle pad is provided with an air The spout 100 may be formed. Further, for example, a guide portion 109 that restricts movement of the wafer in the surface direction of the main body portion 10 (that is, side slip of the wafer) by a frictional force or a force pressing the wafer from the outer peripheral surface is provided on the outer peripheral edge of the main body portion 10. It may be provided. The guide portion 109 is made of, for example, rubber, sponge, or the like, and a plurality of (for example, the outer peripheral edge of the main body portion 10 is displaced from the one end 101a of the groove 101 at a constant interval in the circumferential direction (for example, 3) fixed at intervals of 120 degrees.

以下に、図１、２に示す搬送パッド１を用いて本発明に係るウエーハの搬送方法を実施する場合の、搬送パッド１の動作について説明する。   The operation of the transport pad 1 when the wafer transport method according to the present invention is carried out using the transport pad 1 shown in FIGS.

搬送パッド１が図２に示すウエーハＷを搬送する場合には、図２に示すように、搬送パッド１は、アーム部２０に接続された状態になる。すなわち、例えば、アーム部接続面１０ａの中央領域に連結部材２１が固定され、この連結部材２１を介して搬送パッド１はアーム部２０の一端の下面側に固定された状態になる。アーム部２０の他方の端には、移動手段３が接続されており、移動手段３は、アーム部２０を水平面上において平行移動可能又は旋回移動可能にし、かつ、Ｚ軸方向に上下動可能にしている。移動手段３は、例えば、アーム部２０を空気圧によりＺ軸方向に上下動させるエアシリンダや、モータによりボールネジを回動させることでアーム部２０を平行移動させるボールネジ機構等から構成されている。   When the transport pad 1 transports the wafer W shown in FIG. 2, the transport pad 1 is connected to the arm unit 20 as shown in FIG. 2. That is, for example, the connecting member 21 is fixed to the central region of the arm portion connection surface 10 a, and the transport pad 1 is fixed to the lower surface side of one end of the arm portion 20 through the connecting member 21. The moving means 3 is connected to the other end of the arm part 20, and the moving means 3 enables the arm part 20 to be translated or swiveled on a horizontal plane and to be vertically movable in the Z-axis direction. ing. The moving means 3 includes, for example, an air cylinder that moves the arm portion 20 up and down in the Z-axis direction by air pressure, a ball screw mechanism that moves the arm portion 20 in parallel by rotating the ball screw by a motor, and the like.

連結部材２１は、例えば、ロータリージョイント等から構成されており、アーム部２０に接続されることで、アーム部２０及び連結部材２１の厚み方向（Ｚ軸方向）に延びる流路２１ａが形成される。流路２１ａの一端は、搬送パッド１の接続口１０２に連通しており、流路２１ａのもう一端は、可撓性を有する樹脂チューブ又は金属配管等で構成されるエア供給路２３の一端に連通する。なお、流路２１ａ上に、流路２１ａ内を通るエアを加速させるオリフィス孔等が形成されていてもよい。   The connecting member 21 is composed of, for example, a rotary joint or the like, and is connected to the arm part 20 to form a flow path 21a extending in the thickness direction (Z-axis direction) of the arm part 20 and the connecting member 21. . One end of the flow path 21a communicates with the connection port 102 of the transport pad 1, and the other end of the flow path 21a is connected to one end of an air supply path 23 formed of a flexible resin tube or metal pipe. Communicate. Note that an orifice hole or the like for accelerating the air passing through the flow path 21a may be formed on the flow path 21a.

エア供給路２３のもう一端には、コンプレッサー等からなるエア供給源２４が連通している。また、エア供給路２３上には、例えば、エア供給源２４が搬送パッド１に供給しエア噴出口１００から噴出させ溝１０１に流すエアの流量を第１のエア流量Ｆ１と第１のエア流量Ｆ１より多い流量の第２のエア流量Ｆ２とに調節可能な流量調節部２５が配設されている。流量調節部２５は、例えば、絞り弁であり、弁内部のエアの通過流量を把握可能にする流量計を備えている。   An air supply source 24 composed of a compressor or the like communicates with the other end of the air supply path 23. In addition, on the air supply path 23, for example, the air flow rate of the air supplied from the air supply source 24 to the transport pad 1 and ejected from the air outlet 100 to flow in the groove 101 is the first air flow rate F1 and the first air flow rate. A flow rate adjusting unit 25 that can be adjusted to a second air flow rate F2 having a flow rate higher than F1 is provided. The flow rate adjustment unit 25 is, for example, a throttle valve, and includes a flow meter that makes it possible to grasp the flow rate of air passing through the valve.

図２に示すウエーハＷは、例えば、外形が円形板状の半導体ウエーハであり、ウエーハＷの表面Ｗａには複数のデバイスが形成されており、例えば、表面Ｗａは図示しない保護テープが貼着されて保護されている。ウエーハＷの裏面Ｗｂは、例えば研削加工等が施される被加工面となる。   The wafer W shown in FIG. 2 is, for example, a semiconductor wafer having a circular plate shape, and a plurality of devices are formed on the surface Wa of the wafer W. For example, a protective tape (not shown) is attached to the surface Wa. Protected. The back surface Wb of the wafer W is a processed surface on which, for example, grinding is performed.

まず、図２に示す移動手段３が、搬送パッド１を水平方向に移動させて、図示しないウエーハカセット等に収容されているウエーハＷの裏面Ｗｂと搬送パッド１の保持面１０ｂとが対向し、かつ、ウエーハＷの裏面Ｗｂの中心と搬送パッド１の中心とが略合致するように、搬送パッド１をウエーハＷの上方に位置付ける。   First, the moving means 3 shown in FIG. 2 moves the transport pad 1 in the horizontal direction so that the back surface Wb of the wafer W accommodated in a wafer cassette (not shown) and the holding surface 10b of the transport pad 1 face each other. In addition, the transport pad 1 is positioned above the wafer W so that the center of the back surface Wb of the wafer W substantially matches the center of the transport pad 1.

次いで、例えば、搬送パッド１の保持面１０ｂとウエーハＷの裏面Ｗｂとが接触しない程度の高さ位置まで、移動手段３が搬送パッド１を−Ｚ方向に向かって降下させ位置付ける。この状態で、エア供給源２４が、所定圧力のエアをエア供給路２３に供給する。例えば、流量調節部２５は、流量調節部２５を通過し搬送パッド１に到達しエア噴出口１００から噴出し溝１０１を流れるエアの流量が、第２のエア流量Ｆ２となるように、弁内部が予め大きく開かれた状態になっており、エア供給源２４からエア供給路２３に供給されたエアは、大きく開かれた状態の流量調節部２５を通過し、さらに、流路２１ａ及び接続口１０２を通り、搬送パッド１のエア噴出口１００から噴出する。   Next, for example, the moving means 3 lowers the transport pad 1 in the −Z direction to a position where the holding surface 10b of the transport pad 1 and the back surface Wb of the wafer W are not in contact with each other. In this state, the air supply source 24 supplies air of a predetermined pressure to the air supply path 23. For example, the flow rate adjusting unit 25 passes through the flow rate adjusting unit 25, reaches the transport pad 1, and flows through the ejection groove 101 from the air outlet 100 so that the flow rate of air becomes the second air flow rate F <b> 2. Has been opened in advance, and the air supplied from the air supply source 24 to the air supply path 23 passes through the flow rate adjustment unit 25 in the largely opened state, and further, the flow path 21a and the connection port It passes through 102 and is ejected from the air ejection port 100 of the conveyance pad 1.

エア噴出口１００から噴射されたエアは、保持面１０ｂに形成された各溝１０１内を放射方向に向かって直線状に第２のエア流量Ｆ２で流通することにより、ベルヌーイ効果によって溝１０１の両脇の周囲の空気が溝１０１内部へ引き込まれ、溝１０１近辺に負圧が生じ、ウエーハＷに対する吸着力が生じる。ここで、各溝１０１の一方の端１０１ａが保持部１０の外周縁において開口しているため、エアの溝１０１内での流れが阻害されず、また、溝１０１内のエアのエア流量は、比較的大きな第２のエア流量Ｆ２となっているため、保持面１０ｂに強力な吸着力が生じる。このようにして強力な吸着力でウエーハＷを搬送パッド１の保持面１０ｂに引きつけると、保持面１０ｂがウエーハＷに接触した状態で、搬送パッド１がウエーハＷを吸着保持する。   The air injected from the air outlet 100 circulates in the grooves 101 formed on the holding surface 10b linearly in the radial direction at the second air flow rate F2, so that both of the grooves 101 are caused by the Bernoulli effect. Air around the side is drawn into the groove 101, a negative pressure is generated in the vicinity of the groove 101, and a suction force to the wafer W is generated. Here, since one end 101a of each groove 101 is open at the outer peripheral edge of the holding portion 10, the flow of air in the groove 101 is not obstructed, and the air flow rate of air in the groove 101 is Since the second air flow rate F2 is relatively large, a strong suction force is generated on the holding surface 10b. When the wafer W is attracted to the holding surface 10b of the transport pad 1 with a strong suction force in this manner, the transport pad 1 sucks and holds the wafer W while the holding surface 10b is in contact with the wafer W.

搬送パッド１が吸着保持したウエーハＷを図示しない仮置きテーブルから搬出し、図２に示す保持テーブルＴ上まで搬送する。図２に示す保持テーブルＴは、例えば、その外形が円形状であり、ポーラス部材等からなりウエーハＷを吸引保持する保持部Ｔ１と、保持部Ｔ１を支持する枠体Ｔ２とを備える。ウエーハＷの裏面Ｗｂを吸引保持している搬送パッド１が、ウエーハＷの裏面Ｗｂが上側になるようにして、ウエーハＷを保持テーブルＴ上に接触させる。保持部Ｔ１は図示しない吸引源に連通しており、吸引源が吸引することで生み出された吸引力が保持面Ｔ１ａに伝達されることで、保持テーブルＴは保持面Ｔ１ａ上でウエーハＷを吸引保持する。また、エア供給源２４による搬送パッド１に対するエアの供給を停止させる。または、流量を少なくして搬送パッド１の保持面１０ｂ上の吸着力を消失させ、ウエーハＷを搬送パッド１の保持面１０ｂから離脱させる。そして、搬送パッド１が、ウエーハＷを吸引保持している保持テーブルＴ上から退避する。   The wafer W sucked and held by the transfer pad 1 is unloaded from a temporary table (not shown) and transferred to the holding table T shown in FIG. The holding table T shown in FIG. 2 has, for example, a circular outer shape, and includes a holding portion T1 made of a porous member or the like for sucking and holding the wafer W, and a frame T2 for supporting the holding portion T1. The conveyance pad 1 that sucks and holds the back surface Wb of the wafer W brings the wafer W into contact with the holding table T so that the back surface Wb of the wafer W is on the upper side. The holding part T1 communicates with a suction source (not shown), and the holding table T sucks the wafer W on the holding surface T1a by transmitting the suction force generated by the suction source to the holding surface T1a. Hold. Further, the supply of air to the transport pad 1 by the air supply source 24 is stopped. Alternatively, the suction force on the holding surface 10 b of the transport pad 1 is lost by decreasing the flow rate, and the wafer W is detached from the holding surface 10 b of the transport pad 1. Then, the transport pad 1 retreats from the holding table T that holds the wafer W by suction.

裏面Ｗｂが上側を向いた状態で保持テーブルＴにより吸引保持されたウエーハＷは、例えば図示しない研削手段によって、裏面Ｗｂ側から研削され所定の厚みまで薄化される。研削加工が完了したウエーハＷは、保持テーブルＴから搬送パッド１によって搬出される。   The wafer W sucked and held by the holding table T with the back surface Wb facing upward is ground from the back surface Wb side and thinned to a predetermined thickness by, for example, a grinding means (not shown). The wafer W that has been ground is unloaded from the holding table T by the transfer pad 1.

ウエーハＷを保持テーブルＴから搬出するに際しては、図２に示す移動手段３が、搬送パッド１を水平方向に移動させて、保持テーブルＴにより保持されているウエーハＷの裏面Ｗｂと搬送パッド１の保持面１０ｂとが対向し、かつ、ウエーハＷの裏面Ｗｂの中心と搬送パッド１の中心とが略合致するように、搬送パッド１をウエーハＷの上方に位置付ける。   When the wafer W is unloaded from the holding table T, the moving means 3 shown in FIG. 2 moves the conveyance pad 1 in the horizontal direction, and the back surface Wb of the wafer W held by the holding table T and the conveyance pad 1 The transport pad 1 is positioned above the wafer W so that the holding surface 10b faces and the center of the back surface Wb of the wafer W substantially matches the center of the transport pad 1.

次いで、移動手段３が、搬送パッド１の保持面１０ｂとウエーハＷの裏面Ｗｂとが接触しない程度の高さ位置まで、搬送パッド１を−Ｚ方向に向かって降下させる。そして、エア供給源２４が、所定圧力のエアをエア供給路２３に供給する。例えば、流量調節部２５は、流量調節部２５を通過し搬送パッド１に到達しエア噴出口１００から噴出し溝１０１を流れるエアの流量が、第２のエア流量Ｆ２より少ない流量の第１のエア流量Ｆ１となるように、弁内部の流路が絞られた状態に切り替えられる。そのため、エア供給源２４からエア供給路２３に供給されたエアは、流量調節部２５を通過する際に流量が絞られ、さらに、流路２１ａ及び接続口１０２を通り、搬送パッド１のエア噴出口１００から噴出する。   Next, the moving unit 3 lowers the transport pad 1 in the −Z direction to a height position where the holding surface 10b of the transport pad 1 and the back surface Wb of the wafer W are not in contact with each other. The air supply source 24 supplies air with a predetermined pressure to the air supply path 23. For example, the flow rate adjustment unit 25 passes through the flow rate adjustment unit 25, reaches the transport pad 1, and flows through the ejection groove 101 from the air ejection port 100 so that the flow rate of the air is smaller than the second air flow rate F2. The flow path inside the valve is switched to a narrowed state so that the air flow rate F1 is obtained. Therefore, the flow rate of the air supplied from the air supply source 24 to the air supply path 23 is reduced when passing through the flow rate adjusting unit 25, and further, the air jet of the transport pad 1 passes through the flow path 21 a and the connection port 102. It ejects from the exit 100.

エア噴出口１００から噴射されたエアは、保持面１０ｂに形成された各溝１０１内を放射方向に向かって直線状に第１のエア流量Ｆ１で流通することにより、ベルヌーイ効果によって溝１０１の両脇の周囲の空気が溝１０１内部へ引き込まれ、溝１０１近辺に負圧が生じ、ウエーハＷに対する吸着力が生じる。溝１０１内のエアの流量は、第２のエア流量Ｆ２より少ない流量の第１のエア流量Ｆ１に調節されているため、ウエーハＷと保持面１０ｂとの間に僅かな間隙が形成された状態、すなわち、搬送パッド１が保持面１０ｂで非接触状態でウエーハＷを吸着保持する。   The air injected from the air outlet 100 circulates in the grooves 101 formed on the holding surface 10b linearly in the radial direction at the first air flow rate F1, so that both of the grooves 101 are caused by the Bernoulli effect. Air around the side is drawn into the groove 101, a negative pressure is generated in the vicinity of the groove 101, and a suction force to the wafer W is generated. Since the air flow rate in the groove 101 is adjusted to the first air flow rate F1 which is smaller than the second air flow rate F2, a slight gap is formed between the wafer W and the holding surface 10b. That is, the transport pad 1 sucks and holds the wafer W on the holding surface 10b in a non-contact state.

搬送パッド１がウエーハＷを非接触で吸着保持した後、保持テーブルＴによるウエーハＷの吸引保持が解除される。さらに、搬送パッド１が＋Ｚ方向へと上昇することで、ウエーハＷが保持テーブルＴから搬出される。移動手段３によって、加工後のウエーハＷを非接触で吸着保持した搬送パッド１が水平移動して、加工後のウエーハＷが例えばウエーハ洗浄装置等に搬送される。   After the conveyance pad 1 sucks and holds the wafer W in a non-contact manner, the suction holding of the wafer W by the holding table T is released. Furthermore, the wafer W is unloaded from the holding table T as the transfer pad 1 is raised in the + Z direction. By the moving means 3, the transport pad 1 that sucks and holds the processed wafer W in a non-contact manner moves horizontally, and the processed wafer W is transported to, for example, a wafer cleaning device.

このように、本発明に係る搬送パッド１は、保持面１０ｂに形成され保持面１０ｂに沿ってエアを噴出するエア噴出口１００と、エア噴出口１００から噴出されたエアを保持面１０ｂの外周縁に向かって直線状に流す溝１０１と、を備え、溝１０１にエアを流すことで溝１０１の周囲に発生させる負圧の強弱を溝１０１に流すエアの流量で調整して保持面１０ｂでウエーハＷを保持することができるため、エアの流量を調節するだけで、ウエーハＷの接触保持と非接触保持とを選択的に行うことができる。   As described above, the transport pad 1 according to the present invention includes the air ejection port 100 that is formed on the retaining surface 10b and ejects air along the retaining surface 10b, and the air ejected from the air ejection port 100 is outside the retaining surface 10b. A groove 101 that flows linearly toward the periphery, and the holding surface 10b adjusts the strength of the negative pressure generated around the groove 101 by flowing air through the groove 101 by the flow rate of air flowing through the groove 101. Since the wafer W can be held, the contact holding and non-contact holding of the wafer W can be selectively performed only by adjusting the air flow rate.

また、本発明に係るウエーハの搬送方法においては、搬送パッド１に、エア噴出口１００から噴出させ溝１０１に流すエアの流量を第１のエア流量Ｆ１と第１のエア流量Ｆ１より多い流量の第２のエア流量Ｆ２とに調節可能な流量調節部２５が接続され、搬送パッド１は、保持面１０ｂによりウエーハＷを非接触で保持する時には、第１のエア流量Ｆ１のエアを溝１０１に流し、保持面１０ｂにウエーハＷを接触させて保持面１０ｂによりウエーハＷを保持する時には、第２のエア流量Ｆ２のエアを溝１０１に流すことで、ウエーハＷの非接触保持と接触保持とを選択的に行うことができる。すなわち、搬送パッド及びエアが流れる配管経路を変更することなく、エアの流量を調節するだけで搬送パッド１によるウエーハＷの接触保持と非接触保持とを選択的に行うことができる。また、搬送パッド１に吸引源を接続させる必要がなくなるため、装置構成を複雑なものとしなくても済むようになる。   Further, in the wafer transport method according to the present invention, the flow rate of the air that is ejected from the air ejection port 100 to the transport pad 1 and flows through the groove 101 is higher than the first air flow rate F1 and the first air flow rate F1. An adjustable flow rate adjusting unit 25 is connected to the second air flow rate F2, and when the transport pad 1 holds the wafer W in a non-contact manner by the holding surface 10b, the air of the first air flow rate F1 is supplied to the groove 101. When the wafer W is held in contact with the holding surface 10b and held by the holding surface 10b, non-contact holding and contact holding of the wafer W are performed by flowing air at the second air flow rate F2 into the groove 101. It can be done selectively. That is, it is possible to selectively perform contact holding and non-contact holding of the wafer W by the transport pad 1 only by adjusting the air flow rate without changing the transport pad and the piping path through which the air flows. Further, since it is not necessary to connect a suction source to the transport pad 1, the apparatus configuration does not have to be complicated.

なお、本発明に係るウエーハの搬送方法は上記実施形態に限定されるものではなく、また、添付図面に図示されている搬送パッド１の各構成の形状等についても、これに限定されず、本発明の効果を発揮できる範囲内で適宜変更可能である。例えば、反りが有るウエーハ又は表面に凸凹が形成されるウエーハを搬送パッド１により吸着保持する時には第２のエア流量よりも少なく保持面１０ｂがウエーハに接触しない程度の吸着力を生み出す流量のエアを溝１０１に流し、非接触で吸着保持し、そのウエーハが研削された後は第１のエア流量を溝１０１に流し、非接触で吸着保持すると言うように、溝１０１に流すエア流量を変えるが非接触で保持してもよい。   The wafer transport method according to the present invention is not limited to the above embodiment, and the shape of each component of the transport pad 1 illustrated in the accompanying drawings is not limited to this, and the present invention is not limited to this. Modifications can be made as appropriate within the range where the effects of the invention can be exhibited. For example, when a wafer having warpage or a wafer having a surface with unevenness is sucked and held by the transport pad 1, the flow rate of air is less than the second air flow rate and generates a suction force that does not contact the wafer with the holding surface 10b. The flow rate of air flowing into the groove 101 is changed so that the first air flow rate is flowed into the groove 101 and is sucked and held without contact after the wafer has been ground. You may hold | maintain in non-contact.

１：搬送パッド １０：本体部 １０ｂ：保持面 １０ａ：アーム部接続面
１００：エア噴出口 １０１：溝 １０１ａ：一方の端 １０１ｂ：溝の他方の端 １０２：接続口 １０９：ガイド部
２０：アーム部 ２１：連結部材 ２１ａ：流路
２３：エア供給路 ２４：エア供給源 ２５：流量調節部
３：移動手段
Ｗ：ウエーハ Ｗａ：ウエーハの表面 Ｗｂ：ウエーハの裏面
Ｔ：保持テーブル Ｔ１：吸着部 Ｔ１ａ：保持面 Ｔ２：枠体 DESCRIPTION OF SYMBOLS 1: Transfer pad 10: Main-body part 10b: Holding surface 10a: Arm part connection surface 100: Air jet outlet 101: Groove 101a: One end 101b: The other end of a groove 102: Connection port 109: Guide part 20: Arm part 21: Connecting member 21a: Flow path
23: Air supply path 24: Air supply source 25: Flow rate adjusting unit 3: Moving means W: Wafer Wa: Wafer surface Wb: Wafer back surface T: Holding table T1: Adsorption unit T1a: Holding surface T2: Frame

Claims (2)

保持面でウエーハを保持する板状の搬送パッドであって、
該保持面に形成され該保持面に沿ってエアを噴出するエア噴出口と、該エア噴出口から噴出されたエアを該保持面の外周縁に向かって直線状に流す溝と、を備え、
該溝にエアを流すことで該溝の周囲に発生させる負圧の強弱を該溝に流すエアの流量で調整して該保持面でウエーハを保持する搬送パッド。 A plate-shaped transport pad for holding a wafer on a holding surface,
An air outlet that is formed on the holding surface and jets air along the holding surface; and a groove that linearly flows the air jetted from the air outlet toward the outer periphery of the holding surface,
A conveyance pad that holds the wafer on the holding surface by adjusting the strength of the negative pressure generated around the groove by flowing air in the groove with the flow rate of air flowing in the groove. 請求項１記載の搬送パッドを用いたウエーハの搬送方法であって、
該搬送パッドには、前記エア噴出口から噴出させ前記溝に流すエアの流量を第１のエア流量と該第１のエア流量より多い流量の第２のエア流量とに調節可能な流量調節部が接続され、
該搬送パッドは、前記保持面によりウエーハを非接触で保持する時には、該第１のエア流量のエアを該溝に流し、該保持面にウエーハを接触させて該保持面によりウエーハを保持する時には、該第２のエア流量のエアを該溝に流すことで、ウエーハの非接触保持と接触保持とを選択的に行うウエーハの搬送方法。 A wafer transport method using the transport pad according to claim 1,
The transfer pad is configured to adjust a flow rate of the air that is ejected from the air ejection port and flows through the groove to a first air flow rate and a second air flow rate that is larger than the first air flow rate. Is connected,
When the wafer is held in a non-contact manner by the holding surface, the transport pad allows the air having the first air flow rate to flow in the groove and the wafer is brought into contact with the holding surface to hold the wafer by the holding surface. A wafer transfer method for selectively performing non-contact holding and contact holding of the wafer by flowing air of the second air flow rate into the groove.
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