JP2018046237A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000002184 metal Substances 0.000 claims abstract description 173
- 229910052751 metal Inorganic materials 0.000 claims abstract description 173
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000007747 plating Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 5
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図1は、第1実施形態に係る半導体装置の概略的な構造を示す断面図である。本実施形態に係る半導体装置1は、半導体素子10と、基板20と、金属種30と、絶縁膜40と、めっき金属部50と、を備える。
図9は、第1変形例に係る半導体装置の要部の構造を示す斜視図である。図9では、上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図10は、第2実施形態に係る半導体装置の概略的な構造を示す断面図である。図10では、上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図14は、第2変形例に係る半導体装置の要部の構造を示す斜視図である。図14では、上述した第2実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
Claims (9)
- 半導体素子と、
前記半導体素子が設けられた第1面と、前記第1面とは反対側に位置する第2面と、を有する基板と、
前記第2面に設けられた金属種と、
前記金属種を介して前記第2面に部分的に設けられためっき金属部と、を備え、
前記めっき金属部が設けられた第1領域と、前記めっき金属部が設けられていない第2領域とが、前記第2面の端部で交互に並んだ、半導体装置。 - 前記第2領域に絶縁膜が設けられた、請求項1に記載の半導体装置。
- 前記めっき金属部のパターンが、ドット状またはメッシュ状である、請求項1または2に記載の半導体装置。
- 前記めっき金属部の厚さが、0.3μm以上80μm以下である、請求項1から3のいずれかに記載の半導体装置。
- 基板の第1面に半導体素子を形成し、
前記第1面とは反対側に位置する前記基板の第2面に金属種を形成し、
前記金属種を用いて前記第2面にめっき金属部を部分的に形成し
前記めっき金属部が設けられた第1領域と、前記めっき金属部が設けられていない第2領域とが、交互に並んだラインに沿って前記基板をダイシングする、半導体装置の製造方法。 - 前記金属種を覆う絶縁膜にパターンを形成し、当該パターンに合わせて前記めっき金属部を形成する、請求項5に記載の半導体装置の製造方法。
- 前記金属種にパターンを形成し、当該パターンに合わせて前記めっき金属部を形成する、請求項5に記載の半導体装置の製造方法。
- 電解めっきまたは無電解めっきにて前記めっき金属部を形成する、請求項5から7のいずれかに記載の半導体装置の製造方法。
- 前記めっき金属部を、ドット状またはメッシュ状に形成する、請求項5から8のいずれかに記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016181793A JP2018046237A (ja) | 2016-09-16 | 2016-09-16 | 半導体装置およびその製造方法 |
US15/446,978 US9953894B2 (en) | 2016-09-16 | 2017-03-01 | Semiconductor device and manufacturing method thereof |
CN201710377221.4A CN107833917A (zh) | 2016-09-16 | 2017-05-25 | 半导体装置及其制造方法 |
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JP2016181793A JP2018046237A (ja) | 2016-09-16 | 2016-09-16 | 半導体装置およびその製造方法 |
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JP2018046237A true JP2018046237A (ja) | 2018-03-22 |
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JP2016181793A Pending JP2018046237A (ja) | 2016-09-16 | 2016-09-16 | 半導体装置およびその製造方法 |
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US (1) | US9953894B2 (ja) |
JP (1) | JP2018046237A (ja) |
CN (1) | CN107833917A (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480093A (en) * | 1977-12-08 | 1979-06-26 | Nec Corp | Manufacture of semiconductor device |
JPH05109650A (ja) * | 1991-10-21 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JPH05218020A (ja) * | 1992-01-31 | 1993-08-27 | Nec Corp | 薄膜配線の形成方法 |
JPH06112312A (ja) * | 1992-09-24 | 1994-04-22 | Rohm Co Ltd | 半導体チップの製造方法 |
JPH07176546A (ja) * | 1993-12-21 | 1995-07-14 | Toshiba Corp | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US7227242B1 (en) * | 2003-10-09 | 2007-06-05 | Qspeed Semiconductor Inc. | Structure and method for enhanced performance in semiconductor substrates |
US7449776B2 (en) * | 2005-05-10 | 2008-11-11 | Hewlett-Packard Development Company, L.P. | Cooling devices that use nanowires |
JP2008034704A (ja) | 2006-07-31 | 2008-02-14 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
US9730309B2 (en) * | 2011-04-04 | 2017-08-08 | Ceramtec Gmbh | Ceramic printed circuit board comprising an al cooling body |
US8409927B1 (en) * | 2011-09-23 | 2013-04-02 | GlobalFoundries, Inc. | Methods for fabricating integrated circuit systems including high reliability die under-fill |
JP6065198B2 (ja) | 2012-02-21 | 2017-01-25 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP6027511B2 (ja) | 2013-09-12 | 2016-11-16 | 株式会社東芝 | 半導体装置 |
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2016
- 2016-09-16 JP JP2016181793A patent/JP2018046237A/ja active Pending
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2017
- 2017-03-01 US US15/446,978 patent/US9953894B2/en not_active Expired - Fee Related
- 2017-05-25 CN CN201710377221.4A patent/CN107833917A/zh not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5480093A (en) * | 1977-12-08 | 1979-06-26 | Nec Corp | Manufacture of semiconductor device |
JPH05109650A (ja) * | 1991-10-21 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JPH05218020A (ja) * | 1992-01-31 | 1993-08-27 | Nec Corp | 薄膜配線の形成方法 |
JPH06112312A (ja) * | 1992-09-24 | 1994-04-22 | Rohm Co Ltd | 半導体チップの製造方法 |
JPH07176546A (ja) * | 1993-12-21 | 1995-07-14 | Toshiba Corp | 半導体装置 |
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US20180082918A1 (en) | 2018-03-22 |
US9953894B2 (en) | 2018-04-24 |
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