JP2018037528A5 - - Google Patents

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Publication number
JP2018037528A5
JP2018037528A5 JP2016169617A JP2016169617A JP2018037528A5 JP 2018037528 A5 JP2018037528 A5 JP 2018037528A5 JP 2016169617 A JP2016169617 A JP 2016169617A JP 2016169617 A JP2016169617 A JP 2016169617A JP 2018037528 A5 JP2018037528 A5 JP 2018037528A5
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JP
Japan
Prior art keywords
semiconductor device
terminal
potential
resistance element
transistor
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JP2016169617A
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English (en)
Japanese (ja)
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JP2018037528A (ja
JP6827740B2 (ja
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Priority to JP2016169617A priority Critical patent/JP6827740B2/ja
Priority claimed from JP2016169617A external-priority patent/JP6827740B2/ja
Priority to US15/678,860 priority patent/US10566069B2/en
Priority to CN201710766891.5A priority patent/CN107799154B/zh
Publication of JP2018037528A publication Critical patent/JP2018037528A/ja
Publication of JP2018037528A5 publication Critical patent/JP2018037528A5/ja
Application granted granted Critical
Publication of JP6827740B2 publication Critical patent/JP6827740B2/ja
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JP2016169617A 2016-08-31 2016-08-31 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 Active JP6827740B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016169617A JP6827740B2 (ja) 2016-08-31 2016-08-31 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置
US15/678,860 US10566069B2 (en) 2016-08-31 2017-08-16 Semiconductor apparatus, liquid discharge head substrate, liquid discharge head, and liquid discharge apparatus
CN201710766891.5A CN107799154B (zh) 2016-08-31 2017-08-31 半导体装置、液体排出头基板、液体排出头及装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016169617A JP6827740B2 (ja) 2016-08-31 2016-08-31 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置

Publications (3)

Publication Number Publication Date
JP2018037528A JP2018037528A (ja) 2018-03-08
JP2018037528A5 true JP2018037528A5 (enExample) 2019-10-03
JP6827740B2 JP6827740B2 (ja) 2021-02-10

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ID=61243221

Family Applications (1)

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JP2016169617A Active JP6827740B2 (ja) 2016-08-31 2016-08-31 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置

Country Status (3)

Country Link
US (1) US10566069B2 (enExample)
JP (1) JP6827740B2 (enExample)
CN (1) CN107799154B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6622745B2 (ja) * 2017-03-30 2019-12-18 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置
US10950658B2 (en) 2018-09-21 2021-03-16 Taiwan Semiconductor Manufacturing Company Ltd. Circuit and method to enhance efficiency of memory
JP7195921B2 (ja) * 2018-12-28 2022-12-26 キヤノン株式会社 記録素子基板、液体吐出ヘッド及び記録装置
JP7623857B2 (ja) * 2021-03-10 2025-01-29 キヤノン株式会社 基板、記録装置及び製造方法
JP2023129035A (ja) * 2022-03-04 2023-09-14 キヤノン株式会社 半導体記憶装置及び記録装置
CN114937653A (zh) * 2022-05-18 2022-08-23 珠海艾派克微电子有限公司 半导体器件、存储器、打印头及耗材盒

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373550A (ja) * 1986-09-16 1988-04-04 Nec Corp 半導体装置
JP2005236195A (ja) * 2004-02-23 2005-09-02 Toshiba Corp 半導体装置
JP4498819B2 (ja) * 2004-05-14 2010-07-07 株式会社デンソー 薄膜抵抗装置及び抵抗温度特性調整方法
JP2005337861A (ja) * 2004-05-26 2005-12-08 Denso Corp 磁気検出装置
US8242876B2 (en) * 2008-09-17 2012-08-14 Stmicroelectronics, Inc. Dual thin film precision resistance trimming
DE102009047670B4 (de) * 2009-12-08 2020-07-30 Robert Bosch Gmbh Schaltungseinrichtung mit einem Halbleiter-Bauelement
JP5789812B2 (ja) * 2011-05-12 2015-10-07 株式会社ソシオネクスト 半導体装置
JP5981815B2 (ja) 2012-09-18 2016-08-31 キヤノン株式会社 記録ヘッド用基板及び記録装置
JP6249682B2 (ja) * 2013-08-27 2017-12-20 キヤノン株式会社 液体吐出ヘッド用基板、液体吐出ヘッド、および、記録装置。
US9691473B2 (en) * 2015-09-22 2017-06-27 Sandisk Technologies Llc Adaptive operation of 3D memory
JP6622745B2 (ja) * 2017-03-30 2019-12-18 キヤノン株式会社 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置

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