CN107799154B - 半导体装置、液体排出头基板、液体排出头及装置 - Google Patents
半导体装置、液体排出头基板、液体排出头及装置 Download PDFInfo
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- CN107799154B CN107799154B CN201710766891.5A CN201710766891A CN107799154B CN 107799154 B CN107799154 B CN 107799154B CN 201710766891 A CN201710766891 A CN 201710766891A CN 107799154 B CN107799154 B CN 107799154B
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- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/35—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads providing current or voltage to the thermal head
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- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016169617A JP6827740B2 (ja) | 2016-08-31 | 2016-08-31 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
| JP2016-169617 | 2016-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107799154A CN107799154A (zh) | 2018-03-13 |
| CN107799154B true CN107799154B (zh) | 2021-12-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710766891.5A Active CN107799154B (zh) | 2016-08-31 | 2017-08-31 | 半导体装置、液体排出头基板、液体排出头及装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10566069B2 (enExample) |
| JP (1) | JP6827740B2 (enExample) |
| CN (1) | CN107799154B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6622745B2 (ja) * | 2017-03-30 | 2019-12-18 | キヤノン株式会社 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
| US10950658B2 (en) | 2018-09-21 | 2021-03-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Circuit and method to enhance efficiency of memory |
| JP7195921B2 (ja) * | 2018-12-28 | 2022-12-26 | キヤノン株式会社 | 記録素子基板、液体吐出ヘッド及び記録装置 |
| JP7623857B2 (ja) * | 2021-03-10 | 2025-01-29 | キヤノン株式会社 | 基板、記録装置及び製造方法 |
| JP2023129035A (ja) * | 2022-03-04 | 2023-09-14 | キヤノン株式会社 | 半導体記憶装置及び記録装置 |
| CN114937653A (zh) * | 2022-05-18 | 2022-08-23 | 珠海艾派克微电子有限公司 | 半导体器件、存储器、打印头及耗材盒 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373550A (ja) * | 1986-09-16 | 1988-04-04 | Nec Corp | 半導体装置 |
| CN102668053A (zh) * | 2009-12-08 | 2012-09-12 | 罗伯特·博世有限公司 | 具有半导体组件的电路装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005236195A (ja) * | 2004-02-23 | 2005-09-02 | Toshiba Corp | 半導体装置 |
| JP4498819B2 (ja) * | 2004-05-14 | 2010-07-07 | 株式会社デンソー | 薄膜抵抗装置及び抵抗温度特性調整方法 |
| JP2005337861A (ja) * | 2004-05-26 | 2005-12-08 | Denso Corp | 磁気検出装置 |
| US8242876B2 (en) * | 2008-09-17 | 2012-08-14 | Stmicroelectronics, Inc. | Dual thin film precision resistance trimming |
| JP5789812B2 (ja) * | 2011-05-12 | 2015-10-07 | 株式会社ソシオネクスト | 半導体装置 |
| JP5981815B2 (ja) | 2012-09-18 | 2016-08-31 | キヤノン株式会社 | 記録ヘッド用基板及び記録装置 |
| JP6249682B2 (ja) * | 2013-08-27 | 2017-12-20 | キヤノン株式会社 | 液体吐出ヘッド用基板、液体吐出ヘッド、および、記録装置。 |
| US9691473B2 (en) * | 2015-09-22 | 2017-06-27 | Sandisk Technologies Llc | Adaptive operation of 3D memory |
| JP6622745B2 (ja) * | 2017-03-30 | 2019-12-18 | キヤノン株式会社 | 半導体装置、液体吐出ヘッド用基板、液体吐出ヘッド、及び液体吐出装置 |
-
2016
- 2016-08-31 JP JP2016169617A patent/JP6827740B2/ja active Active
-
2017
- 2017-08-16 US US15/678,860 patent/US10566069B2/en active Active
- 2017-08-31 CN CN201710766891.5A patent/CN107799154B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373550A (ja) * | 1986-09-16 | 1988-04-04 | Nec Corp | 半導体装置 |
| CN102668053A (zh) * | 2009-12-08 | 2012-09-12 | 罗伯特·博世有限公司 | 具有半导体组件的电路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10566069B2 (en) | 2020-02-18 |
| US20180061506A1 (en) | 2018-03-01 |
| JP2018037528A (ja) | 2018-03-08 |
| JP6827740B2 (ja) | 2021-02-10 |
| CN107799154A (zh) | 2018-03-13 |
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