JP2018029314A - 周波数特性調整回路、これを用いた光送信器、及び光トランシーバ - Google Patents
周波数特性調整回路、これを用いた光送信器、及び光トランシーバ Download PDFInfo
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- 238000000034 method Methods 0.000 description 11
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L25/03159—Arrangements for removing intersymbol interference operating in the frequency domain
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G5/00—Tone control or bandwidth control in amplifiers
- H03G5/02—Manually-operated control
- H03G5/025—Equalizers; Volume or gain control in limited frequency bands
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G5/00—Tone control or bandwidth control in amplifiers
- H03G5/16—Automatic control
- H03G5/24—Automatic control in frequency-selective amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G9/00—Combinations of two or more types of control, e.g. gain control and tone control
- H03G9/20—Combinations of two or more types of control, e.g. gain control and tone control in frequency-selective amplifiers
- H03G9/24—Combinations of two or more types of control, e.g. gain control and tone control in frequency-selective amplifiers having semiconductor devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/58—Compensation for non-linear transmitter output
- H04B10/588—Compensation for non-linear transmitter output in external modulation systems
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L25/03012—Arrangements for removing intersymbol interference operating in the time domain
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L25/03343—Arrangements at the transmitter end
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03878—Line equalisers; line build-out devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L2025/03433—Arrangements for removing intersymbol interference characterised by equaliser structure
- H04L2025/03439—Fixed structures
- H04L2025/03522—Frequency domain
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- Physics & Mathematics (AREA)
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- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
キャパシタと、
前記キャパシタと並列に接続される、2以上の抵抗とスイッチの直列回路と、
を有し、
前記スイッチのオン、オフを変化させ、前記スイッチのオン時の抵抗を、前記駆動回路の出力電圧によって変えることで、前記光回路素子と前記キャパシタの接点にある電荷量が前記駆動回路の出力電圧によらず一定となるように調整される。
η=(RL+RS+RM)/(RL+RS+RM+RF)
として、イコライズ回路のないとき(RF=0すなわちη=1)とイコライズ回路を挿入したとき(η<1)を比較する。式(3)の右辺で乗算される最初の項のRM/(RL+RS+RM+RF)が低周波領域の利得を決める項であり、CMRM(RL+RS)/(RL+RS+RM+RF)が帯域を決める項である。
QM1−CF(VDDN−VM1−VSS)=QM2−CF(VDDP-VM2−VDD)
となるように設定される。その結果、入力データ「0」、「1」の変化にかかわらず光回路素子13の入力端にかかる電荷量が一定に保たれる。これにより、帯域拡張された光回路素子13で周波数特性がフラットになり、安定した高速動作が実現できる。
2 光送信器
3 光受信器
9 制御回路
11 駆動回路
13 光回路素子
13A 光変調器
50 イコライズ回路(周波数特性調整回路)
100A 周波数特性調整回路
101−1〜101−2 抵抗ブロック
102 NAND回路
104 NOR回路
105 抵抗
CF キャパシタ
RF、RF1、RF2 抵抗
SW スイッチ
Pm0〜Pmn PMOSトランジスタ
Nm0〜Nmn'NMOSトランジスタ
Claims (10)
- 光回路素子と前記光回路素子を駆動する駆動回路の間に配置される回路であって、
キャパシタと、
前記キャパシタと並列に接続される、2以上の抵抗とスイッチの直列回路、
を有し、
前記スイッチのオン、オフを変化させ、前記スイッチのオン時の抵抗を、前記駆動回路の出力電圧によって変えることで、前記光回路素子と前記キャパシタの接点にある電荷量が前記駆動回路の出力電圧によらず一定となるように調整される、
ことを特徴とする周波数特性調整回路。 - 前記スイッチのオン時の抵抗を、前記駆動回路の出力電圧によって変えることで、前記光回路素子の容量の電圧依存性に非線形性がある場合でも、前記光回路素子と前記キャパシタの接点にある電荷量が前記駆動回路の出力電圧によらず一定となることを特徴とする請求項1に記載の周波数特性調整回路。
- 前記スイッチは、並列接続される複数のトランジスタを含み、
前記抵抗は、抵抗素子であり、
前記トランジスタのオン・オフの数を制御することで、
前記駆動回路の出力電圧に応じて、前記トランジスタのオン抵抗と抵抗素子の抵抗の合成抵抗値が変化することを特徴とする請求項1に記載の周波数特性調整回路。 - 前記光回路素子のアノードは第一の電源に接続され、前記駆動回路は第二の電源に接続され、前記光回路素子のカソード側に前記抵抗が、前記駆動回路の出力側に前記スイッチが配置され、前記スイッチは、複数のPMOSトランジスタと複数のNMOSトランジスタを有し、
前記スイッチが選択される場合は、前記PMOSトランジスタのゲートは低電位に、各前記NMOSトランジスタのゲートは高電位にバイアスされるように論理が組まれていることを特徴とする請求項1〜3のいずれか1項に記載の周波数特性調整回路。 - 前記光回路素子のカソードは第一の電源に接続され、前記駆動回路は第二の電源に接続され、前記光回路素子のアノード側に前記抵抗が、前記駆動回路の出力側に前記スイッチが配置され、前記スイッチは、複数のPMOSトランジスタと複数のNMOSトランジスタを有し、
前記スイッチが選択される場合は、前記PMOSトランジスタのゲートは低電位に、各前記NMOSトランジスタのゲートは高電位にバイアスされるように論理が組まれていることを特徴とする請求項1〜3のいずれか1項に記載の周波数特性調整回路。 - 前記高電位と前記第二の電源の電位は共通化されていることを特徴とする請求項4または請求項5に記載の周波数特性調整回路。
- 前記スイッチの一部が常にオン状態となっていることを特徴とする請求項2〜6のいずれか1項に記載の周波数特性調整回路。
- 前記2以上の抵抗は、基準となる抵抗値に対して1/2n(nは0以上の整数)の抵抗値を有することを特徴とする請求項1〜7のいずれか1項に記載の周波数特性調整回路。
- 電気信号に基づいて光信号を出力する光回路素子と、
前記光回路素子を駆動する駆動回路と、
前記光回路素子と前記駆動回路の間に配置される請求項1〜8のいずれか1項に記載の周波数特性調整回路と、
を有する光送信器。 - 請求項9に記載の光送信器と、
光受信器と、
を有する光トランシーバ。
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US15/644,511 US10256999B2 (en) | 2016-08-19 | 2017-07-07 | Frequency characteristic adjusting circuit, optical transmitter, and optical transceiver |
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JP2019165131A (ja) * | 2018-03-20 | 2019-09-26 | 日本電信電話株式会社 | Dmlドライバ |
JP2020138339A (ja) * | 2019-02-27 | 2020-09-03 | キヤノン株式会社 | 画像形成装置 |
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US11307481B2 (en) * | 2019-09-11 | 2022-04-19 | Electronics And Telecommunications Research Institute | Silicon-based optical modulator |
CN115694660B (zh) * | 2022-09-13 | 2023-09-22 | 北京无线电测量研究所 | 一种t型匹配谐振增强型光电探测器接收网络 |
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JPS53105391A (en) * | 1977-02-25 | 1978-09-13 | Hitachi Ltd | Driving circuit for semiconductor light emitting element |
JPS5739593A (en) * | 1980-08-22 | 1982-03-04 | Nec Corp | Driving circuit of semiconductor light emitting element |
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JP2020138339A (ja) * | 2019-02-27 | 2020-09-03 | キヤノン株式会社 | 画像形成装置 |
JP7237648B2 (ja) | 2019-02-27 | 2023-03-13 | キヤノン株式会社 | 画像形成装置 |
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