JP2018026331A5 - - Google Patents

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JP2018026331A5
JP2018026331A5 JP2017137656A JP2017137656A JP2018026331A5 JP 2018026331 A5 JP2018026331 A5 JP 2018026331A5 JP 2017137656 A JP2017137656 A JP 2017137656A JP 2017137656 A JP2017137656 A JP 2017137656A JP 2018026331 A5 JP2018026331 A5 JP 2018026331A5
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generator
signal
impedance matching
matching circuit
measurement
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JP2017137656A 2016-07-25 2017-07-14 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法 Active JP7072354B2 (ja)

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JP2022077412A JP7335999B2 (ja) 2016-07-25 2022-05-10 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法

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US201662366567P 2016-07-25 2016-07-25
US62/366,567 2016-07-25
US15/636,519 US10283330B2 (en) 2016-07-25 2017-06-28 Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US15/636,519 2017-06-28

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JP2022077412A Active JP7335999B2 (ja) 2016-07-25 2022-05-10 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法

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US (2) US10283330B2 (enExample)
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KR (2) KR102410563B1 (enExample)
CN (2) CN107665804B (enExample)
TW (2) TWI800158B (enExample)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US10665433B2 (en) * 2016-09-19 2020-05-26 Varian Semiconductor Equipment Associates, Inc. Extreme edge uniformity control
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10763081B2 (en) * 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11837446B2 (en) * 2017-07-31 2023-12-05 Lam Research Corporation High power cable for heated components in RF environment
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
JP6902450B2 (ja) * 2017-10-10 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法
CN111670491A (zh) 2018-01-31 2020-09-15 朗姆研究公司 静电卡盘(esc)基座电压隔离
US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
CN110323117B (zh) * 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
CN110416049B (zh) * 2018-04-28 2022-02-11 中微半导体设备(上海)股份有限公司 可调节边缘射频等离子体分布的ccp刻蚀装置及其方法
JP7170422B2 (ja) * 2018-05-15 2022-11-14 東京エレクトロン株式会社 処理装置
TWI652751B (zh) * 2018-06-26 2019-03-01 旺矽科技股份有限公司 用於垂直式共振腔面射型雷射晶粒之點測方法
JP7080114B2 (ja) * 2018-06-27 2022-06-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
KR101938574B1 (ko) * 2018-08-24 2019-04-10 주식회사 알에프피티 플라즈마 챔버에 고정밀 및 고속의 전력을 공급하기 위한 디지탈 전력전달장치
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
JP6762410B2 (ja) * 2018-10-10 2020-09-30 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102111504B1 (ko) 2018-10-15 2020-05-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102595900B1 (ko) * 2018-11-13 2023-10-30 삼성전자주식회사 플라즈마 처리 장치
US11289310B2 (en) * 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7117734B2 (ja) * 2018-12-06 2022-08-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10720305B2 (en) * 2018-12-21 2020-07-21 Advanced Energy Industries, Inc. Plasma delivery system for modulated plasma systems
US11515123B2 (en) * 2018-12-21 2022-11-29 Advanced Energy Industries, Inc. Apparatus and system for modulated plasma systems
US11804362B2 (en) * 2018-12-21 2023-10-31 Advanced Energy Industries, Inc. Frequency tuning for modulated plasma systems
US11361947B2 (en) 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
JP7258562B2 (ja) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
JP2022520784A (ja) 2019-02-12 2022-04-01 ラム リサーチ コーポレーション セラミックモノリシック本体を備えた静電チャック
US11189517B2 (en) * 2019-04-26 2021-11-30 Applied Materials, Inc. RF electrostatic chuck filter circuit
KR20210149225A (ko) * 2019-04-29 2021-12-08 램 리써치 코포레이션 Rf 플라즈마 툴들의 멀티 레벨 펄싱을 위한 시스템들 및 방법들
KR102214333B1 (ko) * 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102256216B1 (ko) * 2019-06-27 2021-05-26 세메스 주식회사 플라즈마 처리 장치 및 플라즈마 제어 방법
KR102290910B1 (ko) * 2019-06-27 2021-08-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112151343B (zh) * 2019-06-28 2023-03-24 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体处理装置及其方法
WO2021112991A1 (en) * 2019-12-06 2021-06-10 Lam Research Corporation Substrate supports with integrated rf filters
CN112992635B (zh) * 2019-12-13 2023-10-24 中微半导体设备(上海)股份有限公司 一种晶圆固定装置及其形成方法、等离子体处理设备
WO2021158612A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Electrostatic edge ring mounting system for substrate processing
JP2023516076A (ja) * 2020-03-04 2023-04-17 ラム リサーチ コーポレーション 調整可能なエッジシースシステムでの反射電力最小化
US12183544B2 (en) 2020-03-06 2024-12-31 Lam Research Corporation Tuning voltage setpoint in a pulsed RF signal for a tunable edge sheath system
CN113394067B (zh) 2020-03-13 2026-02-10 Asmip私人控股有限公司 基板处理设备
JP2021150380A (ja) 2020-03-17 2021-09-27 キオクシア株式会社 膜処理方法および半導体装置の製造方法
JP7411463B2 (ja) * 2020-03-17 2024-01-11 東京エレクトロン株式会社 検査方法及び検査装置
US11276601B2 (en) 2020-04-10 2022-03-15 Applied Materials, Inc. Apparatus and methods for manipulating power at an edge ring in a plasma processing device
TWI903072B (zh) * 2020-05-01 2025-11-01 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
JP7516198B2 (ja) * 2020-05-01 2024-07-16 東京エレクトロン株式会社 エッチング装置及びエッチング方法
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
US11655540B2 (en) * 2020-06-26 2023-05-23 Applied Materials, Inc. Methods and apparatus for adjusting wafer performance using multiple RF generators
US12597589B2 (en) * 2020-06-29 2026-04-07 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
GB202012560D0 (en) 2020-08-12 2020-09-23 Spts Technologies Ltd Apparatus and method
US12626887B2 (en) * 2020-11-13 2026-05-12 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
CN114551199B (zh) * 2020-11-19 2025-08-08 中微半导体设备(上海)股份有限公司 一种限制环及其制作方法、以及等离子体处理装置
JP7842759B2 (ja) * 2020-12-08 2026-04-08 ラム リサーチ コーポレーション 低周波ｒｆ発生器および関連する静電チャック
KR102427905B1 (ko) * 2020-12-21 2022-08-02 주식회사 테스 기판처리장치
KR102762970B1 (ko) * 2020-12-23 2025-02-07 삼성전자주식회사 기판 처리 장치 모니터링 방법 및 시스템
JP2024507722A (ja) * 2021-02-05 2024-02-21 ラム リサーチ コーポレーション 均一性を実現するためのデューティサイクル制御
KR102876338B1 (ko) * 2021-03-24 2025-10-27 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法
JP7638930B2 (ja) * 2021-05-31 2025-03-04 東京エレクトロン株式会社 プラズマ処理装置
US20220399186A1 (en) * 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
WO2023003832A1 (en) * 2021-07-23 2023-01-26 Lam Research Corporation Plasma systems and methods for using square-shaped pulse signals
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
KR102925672B1 (ko) * 2021-09-09 2026-02-09 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 내 이온 에너지 분포의 디지털 제어를 위한 방법 및 장치
WO2023055836A1 (en) * 2021-09-29 2023-04-06 Lam Research Corporation Edge capacitively coupled plasma chamber structure
KR102904705B1 (ko) 2021-11-09 2025-12-29 삼성전자주식회사 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR20230069288A (ko) * 2021-11-11 2023-05-19 삼성전자주식회사 플라즈마 에지 링, 이를 포함하는 플라즈마 식각 장비 및 이를 이용한 플라즈마 식각 방법
JP7740979B2 (ja) * 2021-12-13 2025-09-17 東京エレクトロン株式会社 プラズマ処理装置及び電位制御方法
WO2023158490A1 (en) * 2022-02-18 2023-08-24 Lam Research Corporation Systems and methods for central frequency tuning
KR102646591B1 (ko) 2022-05-13 2024-03-12 세메스 주식회사 기판 처리 장치
WO2023240003A1 (en) * 2022-06-08 2023-12-14 Lam Research Corporation Rf and dc frequency and phase locked pulsed edge tilt control system
WO2024112517A1 (en) * 2022-11-23 2024-05-30 Lam Research Corporation Systems and methods for controlling tilts across a surface of a substrate
US20240194446A1 (en) * 2022-12-09 2024-06-13 Applied Materials, Inc. Chamber impedance management in a processing chamber
US12586759B2 (en) 2023-01-27 2026-03-24 Mks Inc. Pulsed RF plasma generator with high dynamic range
US20240282557A1 (en) * 2023-02-17 2024-08-22 Samsung Electronics Co., Ltd. Substrate processing apparatus and substrate processing method using the same
TW202520336A (zh) * 2023-07-04 2025-05-16 日商東京威力科創股份有限公司 電漿處理裝置、控制方法及控制程式
US12706277B2 (en) * 2023-09-08 2026-08-11 Applied Materials, Inc. Radio-frequency (RF) matching network and tuning technique
KR102902657B1 (ko) * 2024-04-01 2025-12-23 주식회사 알에프피티 멀티 챔버 기반의 플라즈마 처리 장치 및 그의 위상 동기화 방법
WO2026015311A1 (en) * 2024-07-09 2026-01-15 Lam Research Corporation Systems and methods for providing an hf rf signal to an upper electrode extension
WO2026043744A1 (en) * 2024-08-22 2026-02-26 Lam Research Corporation Systems and methods for splitting top mhz power using a capacitor

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824606A (en) * 1996-03-29 1998-10-20 Lam Research Corporation Methods and apparatuses for controlling phase difference in plasma processing systems
US6447719B1 (en) * 2000-10-02 2002-09-10 Johnson & Johnson Power system for sterilization systems employing low frequency plasma
JP4773079B2 (ja) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US20080179948A1 (en) * 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
US20100015357A1 (en) * 2008-07-18 2010-01-21 Hiroji Hanawa Capacitively coupled plasma etch chamber with multiple rf feeds
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
KR101246566B1 (ko) * 2010-12-30 2013-03-25 엘아이지에이디피 주식회사 플라즈마를 이용한 기판처리장치 및 이를 이용한 기판처리방법
US8988848B2 (en) * 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US10526708B2 (en) * 2012-06-19 2020-01-07 Aixtron Se Methods for forming thin protective and optical layers on substrates
US9408288B2 (en) * 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9336995B2 (en) * 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US10224210B2 (en) * 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
US10187032B2 (en) * 2016-06-17 2019-01-22 Lam Research Corporation Combiner and distributor for adjusting impedances or power across multiple plasma processing stations
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
TWI788390B (zh) * 2017-08-10 2023-01-01 美商應用材料股份有限公司 用於電漿處理的分佈式電極陣列

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