JP2018026331A5 - - Google Patents

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JP2018026331A5
JP2018026331A5 JP2017137656A JP2017137656A JP2018026331A5 JP 2018026331 A5 JP2018026331 A5 JP 2018026331A5 JP 2017137656 A JP2017137656 A JP 2017137656A JP 2017137656 A JP2017137656 A JP 2017137656A JP 2018026331 A5 JP2018026331 A5 JP 2018026331A5
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signal
impedance matching
matching circuit
measurement
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JP2017137656A 2016-07-25 2017-07-14 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法 Active JP7072354B2 (ja)

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JP2022077412A JP7335999B2 (ja) 2016-07-25 2022-05-10 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法

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US201662366567P 2016-07-25 2016-07-25
US62/366,567 2016-07-25
US15/636,519 2017-06-28
US15/636,519 US10283330B2 (en) 2016-07-25 2017-06-28 Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators

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JP2022077412A Active JP7335999B2 (ja) 2016-07-25 2022-05-10 メインｒｆ発生器およびエッジｒｆ発生器を同期させることによってプラズマチャンバ内のエッジ領域に関連する予め定められた要素を達成するためのシステムおよび方法

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US (2) US10283330B2 (enExample)
JP (2) JP7072354B2 (enExample)
KR (2) KR102410563B1 (enExample)
CN (2) CN107665804B (enExample)
TW (2) TWI800158B (enExample)

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