JP2017537043A - ポリシリコンチップ回収アセンブリ、及びポリシリコン洗浄装置からポリシリコンチップを回収する方法 - Google Patents
ポリシリコンチップ回収アセンブリ、及びポリシリコン洗浄装置からポリシリコンチップを回収する方法 Download PDFInfo
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- JP2017537043A JP2017537043A JP2017516997A JP2017516997A JP2017537043A JP 2017537043 A JP2017537043 A JP 2017537043A JP 2017516997 A JP2017516997 A JP 2017516997A JP 2017516997 A JP2017516997 A JP 2017516997A JP 2017537043 A JP2017537043 A JP 2017537043A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 186
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 179
- 238000004140 cleaning Methods 0.000 title claims abstract description 42
- 238000011084 recovery Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 37
- 239000012530 fluid Substances 0.000 claims abstract description 45
- 238000010926 purge Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000018044 dehydration Effects 0.000 claims description 3
- 238000006297 dehydration reaction Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010960 commercial process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning In General (AREA)
Abstract
Description
本出願は、2014年9月30日出願の米国特許仮出願第62/057,568号に対する優先権及びその全ての利益を主張するものであり、その内容は、本明細書において参照としてその全体を組み込まれる。
Claims (15)
- 複数のポリシリコン体を洗浄するように構成された、ポリシリコン洗浄装置と、
洗浄中に前記ポリシリコン体から生成される複数のポリシリコンチップであって、前記複数のポリシリコンチップそれぞれが、0.1mm〜25.0mmの最大寸法長さを有する、複数のポリシリコンチップと、
前記ポリシリコン洗浄装置から主要チップドレインラインへと前記複数のポリシリコンチップを導くように構成された、ポリシリコン装置ドレインラインであって、前記主要チップドレインラインは、前記ポリシリコン装置ドレインラインから下方に傾斜するように向けられている、ポリシリコン装置ドレインラインと、
前記主要チップドレインラインに流体連結され、前記主要チップドレインラインに流体を注入して前記主要チップドレインラインを通じて前記複数のポリシリコンチップを推進するように構成された、流体源と、を備える、ポリシリコンチップ回収アセンブリ。 - 前記流体が脱イオン水を含む、請求項1に記載のポリシリコンチップ回収アセンブリ。
- 前記主要チップドレインラインの下向きの傾斜は、4.2センチメートル/メートル〜12.5センチメートル/メートル(0.5インチ/フィート〜1.5インチ/フィート)である、請求項1又は2に記載のポリシリコンチップ回収アセンブリ。
- 前記主要チップドレインラインはプラスチックチューブを備える、請求項1〜3のいずれか一項に記載のポリシリコンチップ回収アセンブリ。
- 前記プラスチックチューブは、8センチメートル〜20センチメートル(3インチ〜8インチ)の直径を含む、請求項4に記載のポリシリコンチップ回収アセンブリ。
- チップ回収タンクを更に備え、前記主要チップドレインラインは前記チップ回収タンク付近に出口を備え、前記出口は、前記複数のポリシリコンチップを前記チップ回収タンク内へと方向付けるように構成されている、請求項1〜5のいずれか一項に記載のポリシリコンチップ回収アセンブリ。
- 前記チップ回収タンクは、前記複数のチップのpHレベルを中和するために、すすぎ流体を分配して前記複数のポリシリコンチップと接触させるように構成された、すすぎシステムを備える、請求項6に記載のポリシリコンチップ回収アセンブリ。
- 前記チップ回収タンクは、前記チップ回収タンクから出るように前記すすぎ流体を導くように構成された排出ドレインラインを備える、請求項6又は7に記載のポリシリコンチップ回収アセンブリ。
- 前記チップ回収タンクの出口と、コンベアとの間に延びる、チップ誘導ラインを更に備える、請求項6〜8のいずれか一項に記載のポリシリコンチップ回収アセンブリ。
- 前記コンベアは振動コンベアを備える、請求項9に記載のポリシリコンチップ回収アセンブリ。
- 前記コンベアは、5°〜10°の角度で上方に傾斜するように、角度を付けられており、分配される前記流体の最大95%を除去するように構成された脱水システムを含む、請求項9又は10に記載のポリシリコンチップ回収アセンブリ。
- 前記チップ誘導ラインは複数の弁を備え、前記ポリシリコンチップ回収アセンブリは、前記複数の弁の2つの間の位置で前記チップ誘導ラインと流体連結されたパージラインを更に備える、請求項9〜11のいずれか一項に記載のポリシリコンチップ回収アセンブリ。
- 前記コンベアから前記複数のポリシリコンチップを受けとるように構成された乾燥機を更に備え、前記乾燥機は温度センサー及び湿度センサーを備える、請求項9〜12のいずれか一項に記載のポリシリコンチップ回収アセンブリ。
- ポリシリコン洗浄装置からポリシリコンチップを回収する方法であって、
ポリシリコン洗浄装置から、少なくとも1つのポリシリコン装置ドレインラインを通じて、複数のポリシリコンチップを流す工程であって、前記複数のポリシリコンチップそれぞれが、0.1mm〜25.0mmの最大寸法長さを有する、工程と、
前記ポリシリコン装置ドレインラインを通じ、下方に傾斜するように向けられた主要チップドレインラインへと前記複数のポリシリコンチップを導く工程と、
流体により、前記主要チップドレインラインを介して、チップ回収タンクへと前記複数のポリシリコンチップを推進する工程とを含む、方法。 - 前記複数のポリシリコンチップの移動方向に対して上向きの角度で配置されたコンベアに前記複数のポリシリコンチップを導く工程と、
前記コンベアから乾燥機へと前記複数のポリシリコンチップを導く工程であって、前記乾燥機は温度センサー及び湿度センサーを有する自動乾燥機ユニットである、工程と、
前記自動乾燥機ユニット内の温度、及び自動乾燥機ユニット内の湿度レベルをモニタリングする工程と、
乾燥を向上させるために、自動乾燥機ユニット内でポリシリコンチップを回転させる工程と、
前記温度センサーにより検出される所定の温度、及び前記湿度センサーにより検出される所定の湿度レベルが検出された際に、前記複数のポリシリコンチップをパッケージングユニットに分配する工程と、を更に含む、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462057568P | 2014-09-30 | 2014-09-30 | |
US62/057,568 | 2014-09-30 | ||
PCT/US2015/048293 WO2016053571A1 (en) | 2014-09-30 | 2015-09-03 | Polysilicon chip reclamation assembly and method of reclaiming polysilicon chips from a polysilicon cleaning apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017537043A true JP2017537043A (ja) | 2017-12-14 |
JP6640842B2 JP6640842B2 (ja) | 2020-02-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017516997A Active JP6640842B2 (ja) | 2014-09-30 | 2015-09-03 | ポリシリコンチップ回収アセンブリ、及びポリシリコン洗浄装置からポリシリコンチップを回収する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10431447B2 (ja) |
JP (1) | JP6640842B2 (ja) |
CN (1) | CN107078077B (ja) |
CA (1) | CA2960970A1 (ja) |
DE (1) | DE112015004469T5 (ja) |
TW (1) | TW201613701A (ja) |
WO (1) | WO2016053571A1 (ja) |
Family Cites Families (15)
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US6006736A (en) * | 1995-07-12 | 1999-12-28 | Memc Electronic Materials, Inc. | Method and apparatus for washing silicon ingot with water to remove particulate matter |
US5799643A (en) * | 1995-10-04 | 1998-09-01 | Nippei Toyama Corp | Slurry managing system and slurry managing method for wire saws |
DE19637086C2 (de) * | 1996-09-12 | 1999-06-24 | Duerr Ecoclean Gmbh | Automatisch arbeitende Reinigungsanlage für Werkstücke |
JP2000294530A (ja) * | 1999-04-06 | 2000-10-20 | Nec Corp | 半導体基板の洗浄方法及びその洗浄装置 |
JP3728996B2 (ja) * | 1999-10-04 | 2005-12-21 | 株式会社Sumco | シリコン原料の洗浄乾燥装置 |
US6375841B1 (en) * | 2000-02-15 | 2002-04-23 | Inter-Source Recovery Systems, Inc. | System for transporting and separating wet chips and delivering dried chips |
JP3794247B2 (ja) * | 2000-06-27 | 2006-07-05 | 株式会社Sumco | 粒状半導体材料洗浄装置 |
US6837254B2 (en) * | 2001-09-06 | 2005-01-04 | Seiwa Pro Co., Ltd. | System for cleaning drainage pipes in movable equipment |
US20050269254A1 (en) | 2004-05-24 | 2005-12-08 | Roitman Lipa L | [Air and Water Purifying System And Filter Media] |
JP2009536462A (ja) * | 2006-05-03 | 2009-10-08 | セント ローレンス ナノテクノロジー, インコーポレイテッド | 個々のダイの研磨が可能な大型ウェハの化学機械研磨方法及び装置 |
KR100874383B1 (ko) | 2007-10-16 | 2008-12-18 | 주식회사 실트론 | 다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 |
JP2011071275A (ja) * | 2009-09-25 | 2011-04-07 | Hitachi Plant Technologies Ltd | 多結晶シリコンの乾燥方法 |
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2015
- 2015-09-03 US US15/506,483 patent/US10431447B2/en active Active
- 2015-09-03 JP JP2017516997A patent/JP6640842B2/ja active Active
- 2015-09-03 CA CA2960970A patent/CA2960970A1/en not_active Abandoned
- 2015-09-03 CN CN201580051962.2A patent/CN107078077B/zh active Active
- 2015-09-03 DE DE112015004469.8T patent/DE112015004469T5/de active Pending
- 2015-09-03 WO PCT/US2015/048293 patent/WO2016053571A1/en active Application Filing
- 2015-09-25 TW TW104131758A patent/TW201613701A/zh unknown
Also Published As
Publication number | Publication date |
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TW201613701A (en) | 2016-04-16 |
US20180226243A1 (en) | 2018-08-09 |
WO2016053571A1 (en) | 2016-04-07 |
CN107078077B (zh) | 2020-11-10 |
JP6640842B2 (ja) | 2020-02-05 |
DE112015004469T5 (de) | 2017-06-14 |
CA2960970A1 (en) | 2016-04-07 |
CN107078077A (zh) | 2017-08-18 |
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