KR100874383B1 - 다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 - Google Patents
다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 Download PDFInfo
- Publication number
- KR100874383B1 KR100874383B1 KR1020070103809A KR20070103809A KR100874383B1 KR 100874383 B1 KR100874383 B1 KR 100874383B1 KR 1020070103809 A KR1020070103809 A KR 1020070103809A KR 20070103809 A KR20070103809 A KR 20070103809A KR 100874383 B1 KR100874383 B1 KR 100874383B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- unit
- polycrystalline silicon
- drying
- etching
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (3)
- 다결정 실리콘을 식각시키는 식각유닛;상기 다결정 실리콘을 세정시키는 세정유닛;상기 다결정 실리콘을 건조시키는 건조유닛; 및상기 다결정 실리콘을 상기 식각유닛으로부터 상기 건조유닛으로 이송시키는 이송유닛;을 포함하는 것을 특징으로 하는 다결정 실리콘 재생장치.
- 제1항에 있어서,상기 다결정 실리콘의 이송경로 상 상기 식각유닛과 상기 건조유닛 사이에 배치되며, 상기 다결정 실리콘이 건조되도록 상기 다결정 실리콘을 진동 또는 회전시켜 건조시키는 보조건조유닛;을 더 포함하는 것을 특징으로 하는 다결정 실리콘 재생장치.
- 다결정 실리콘을 분쇄하는 분쇄단계;상기 다결정 실리콘을 식각하는 식각단계;상기 다결정 실리콘을 세정하는 세정단계;상기 다결정 실리콘이 건조되도록 상기 다결정 실리콘을 진동 또는 회전시키는 제1건조단계; 및상기 다결정 실리콘이 건조되도록 상기 다결정 실리콘을 가열하는 제2건조단 계;를 포함하는 것을 특징으로 하는 다결정 실리콘 재생방법.
Priority Applications (1)
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KR1020070103809A KR100874383B1 (ko) | 2007-10-16 | 2007-10-16 | 다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 |
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KR1020070103809A KR100874383B1 (ko) | 2007-10-16 | 2007-10-16 | 다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 |
Publications (1)
Publication Number | Publication Date |
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KR100874383B1 true KR100874383B1 (ko) | 2008-12-18 |
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KR1020070103809A KR100874383B1 (ko) | 2007-10-16 | 2007-10-16 | 다결정 실리콘 재생장치 및 다결정 실리콘 재생방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431447B2 (en) | 2014-09-30 | 2019-10-01 | Hemlock Semiconductor Corporation | Polysilicon chip reclamation assembly and method of reclaiming polysilicon chips from a polysilicon cleaning apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000501231A (ja) | 1995-10-13 | 2000-02-02 | ウェン,ヅイン | 半導体ウエハの化学的処理方法および装置 |
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2007
- 2007-10-16 KR KR1020070103809A patent/KR100874383B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000501231A (ja) | 1995-10-13 | 2000-02-02 | ウェン,ヅイン | 半導体ウエハの化学的処理方法および装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431447B2 (en) | 2014-09-30 | 2019-10-01 | Hemlock Semiconductor Corporation | Polysilicon chip reclamation assembly and method of reclaiming polysilicon chips from a polysilicon cleaning apparatus |
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