JP2017535075A5 - - Google Patents
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- Publication number
- JP2017535075A5 JP2017535075A5 JP2017520461A JP2017520461A JP2017535075A5 JP 2017535075 A5 JP2017535075 A5 JP 2017535075A5 JP 2017520461 A JP2017520461 A JP 2017520461A JP 2017520461 A JP2017520461 A JP 2017520461A JP 2017535075 A5 JP2017535075 A5 JP 2017535075A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- etching
- depositing
- silicon substrate
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims 1
- 229930006000 Sucrose Natural products 0.000 claims 1
- 238000004380 ashing Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000005720 sucrose Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/525,543 US9589828B2 (en) | 2014-10-28 | 2014-10-28 | Method for photolithography-free self-aligned reverse active etch |
| US14/525,543 | 2014-10-28 | ||
| PCT/US2015/057469 WO2016069531A1 (en) | 2014-10-28 | 2015-10-27 | A method for photolithography-free self-aligned reverse active etch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017535075A JP2017535075A (ja) | 2017-11-24 |
| JP2017535075A5 true JP2017535075A5 (enExample) | 2018-11-22 |
Family
ID=54477334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017520461A Pending JP2017535075A (ja) | 2014-10-28 | 2015-10-27 | フォトリソグラフィを用いない自己整合逆活性エッチングのための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9589828B2 (enExample) |
| EP (1) | EP3213343B1 (enExample) |
| JP (1) | JP2017535075A (enExample) |
| KR (1) | KR20170075716A (enExample) |
| CN (1) | CN107078022B (enExample) |
| SG (1) | SG11201702042YA (enExample) |
| TW (1) | TW201631650A (enExample) |
| WO (1) | WO2016069531A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019169581A (ja) * | 2018-03-23 | 2019-10-03 | 株式会社東芝 | 半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6395620B1 (en) | 1996-10-08 | 2002-05-28 | Micron Technology, Inc. | Method for forming a planar surface over low density field areas on a semiconductor wafer |
| US5874345A (en) | 1996-11-18 | 1999-02-23 | International Business Machines Corporation | Method for planarizing TEOS SiO2 filled shallow isolation trenches |
| US5728621A (en) | 1997-04-28 | 1998-03-17 | Chartered Semiconductor Manufacturing Pte Ltd | Method for shallow trench isolation |
| US5976982A (en) * | 1997-06-27 | 1999-11-02 | Siemens Aktiengesellschaft | Methods for protecting device components from chemical mechanical polish induced defects |
| US6146975A (en) * | 1998-07-10 | 2000-11-14 | Lucent Technologies Inc. | Shallow trench isolation |
| TW413883B (en) * | 1999-02-26 | 2000-12-01 | Vanguard Int Semiconduct Corp | Method for using nitride hard mask for local reversed back-etching and CMP to solve the dishing effect encountered during CMP plantarization process |
| US6444581B1 (en) | 1999-07-15 | 2002-09-03 | International Business Machines Corporation | AB etch endpoint by ABFILL compensation |
| US6391781B1 (en) | 2000-01-06 | 2002-05-21 | Oki Electric Industry Co., Ltd. | Method of making a semiconductor device |
| TW436975B (en) * | 2000-03-23 | 2001-05-28 | United Microelectronics Corp | Shallow trench isolation process |
| US6593208B1 (en) * | 2001-02-14 | 2003-07-15 | Cypress Semiconductor Corp. | Method of uniform polish in shallow trench isolation process |
| US6617251B1 (en) * | 2001-06-19 | 2003-09-09 | Lsi Logic Corporation | Method of shallow trench isolation formation and planarization |
| US6638866B1 (en) * | 2001-10-18 | 2003-10-28 | Taiwan Semiconductor Manufacturing Company | Chemical-mechanical polishing (CMP) process for shallow trench isolation |
| US8426300B2 (en) * | 2010-12-02 | 2013-04-23 | International Business Machines Corporation | Self-aligned contact for replacement gate devices |
-
2014
- 2014-10-28 US US14/525,543 patent/US9589828B2/en active Active
-
2015
- 2015-10-27 JP JP2017520461A patent/JP2017535075A/ja active Pending
- 2015-10-27 KR KR1020177008459A patent/KR20170075716A/ko not_active Withdrawn
- 2015-10-27 WO PCT/US2015/057469 patent/WO2016069531A1/en not_active Ceased
- 2015-10-27 EP EP15791164.5A patent/EP3213343B1/en active Active
- 2015-10-27 SG SG11201702042YA patent/SG11201702042YA/en unknown
- 2015-10-27 CN CN201580057738.4A patent/CN107078022B/zh active Active
- 2015-10-28 TW TW104135483A patent/TW201631650A/zh unknown
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