JP2017535074A5 - - Google Patents
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- Publication number
- JP2017535074A5 JP2017535074A5 JP2017519858A JP2017519858A JP2017535074A5 JP 2017535074 A5 JP2017535074 A5 JP 2017535074A5 JP 2017519858 A JP2017519858 A JP 2017519858A JP 2017519858 A JP2017519858 A JP 2017519858A JP 2017535074 A5 JP2017535074 A5 JP 2017535074A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- field plate
- semiconductor device
- power semiconductor
- base contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 40
- 238000000034 method Methods 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462063090P | 2014-10-13 | 2014-10-13 | |
| US62/063,090 | 2014-10-13 | ||
| PCT/US2015/055388 WO2016061140A1 (en) | 2014-10-13 | 2015-10-13 | Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017535074A JP2017535074A (ja) | 2017-11-24 |
| JP2017535074A5 true JP2017535074A5 (https=) | 2018-09-06 |
| JP6559232B2 JP6559232B2 (ja) | 2019-08-14 |
Family
ID=55747235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017519858A Active JP6559232B2 (ja) | 2014-10-13 | 2015-10-13 | ダブルベース双方向バイポーラトランジスタの２つの対向面上のフィールドプレート：デバイス、方法、およびシステム |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10418471B2 (https=) |
| EP (1) | EP3155664B1 (https=) |
| JP (1) | JP6559232B2 (https=) |
| KR (1) | KR102382856B1 (https=) |
| CN (1) | CN106796951B (https=) |
| GB (1) | GB2535381B (https=) |
| WO (1) | WO2016061140A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US11069797B2 (en) | 2016-05-25 | 2021-07-20 | Ideal Power Inc. | Ruggedized symmetrically bidirectional bipolar power transistor |
| US11233141B2 (en) | 2018-01-16 | 2022-01-25 | Ipower Semiconductor | Self-aligned and robust IGBT devices |
| US20190245070A1 (en) * | 2018-02-07 | 2019-08-08 | Ipower Semiconductor | Igbt devices with 3d backside structures for field stop and reverse conduction |
| CN112909031A (zh) * | 2019-12-04 | 2021-06-04 | 半导体元件工业有限责任公司 | 半导体器件 |
| US11411557B2 (en) | 2020-05-18 | 2022-08-09 | Ideal Power Inc. | Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN) |
| US11496129B2 (en) | 2020-06-08 | 2022-11-08 | Ideal Power Inc. | Method and system of current sharing among bidirectional double-base bipolar junction transistors |
| US11777018B2 (en) | 2020-11-19 | 2023-10-03 | Ideal Power Inc. | Layout to reduce current crowding at endpoints |
| CN116686095A (zh) * | 2020-12-10 | 2023-09-01 | 理想能量有限公司 | 操作双向双基极双极结型晶体管(b-tran)的方法及系统 |
| US11881525B2 (en) | 2021-08-10 | 2024-01-23 | Ideal Power Inc. | Semiconductor device with bi-directional double-base trench power switches |
| WO2024123521A1 (en) * | 2022-12-08 | 2024-06-13 | Ideal Power Inc. | Bidirectional bipolar junction transistor devices from bonded wide and thick wafers |
| US12506475B2 (en) | 2023-08-30 | 2025-12-23 | Ideal Power Inc. | Hybrid switch circuit with bidirectional double-base bipolar junction transistors |
| US12388442B2 (en) | 2023-12-06 | 2025-08-12 | Ideal Power Inc. | Unidirectional hybrid switch circuit |
| US12506476B2 (en) | 2024-02-21 | 2025-12-23 | Ideal Power Inc. | Methods and systems of operating a double-sided double-base bipolar junction transistor |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224457A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
| JP3352840B2 (ja) * | 1994-03-14 | 2002-12-03 | 株式会社東芝 | 逆並列接続型双方向性半導体スイッチ |
| JPH11145154A (ja) * | 1997-11-13 | 1999-05-28 | Nissan Motor Co Ltd | バイポーラトランジスタ |
| JP4198251B2 (ja) * | 1999-01-07 | 2008-12-17 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
| JP2000315691A (ja) * | 1999-04-28 | 2000-11-14 | Sanken Electric Co Ltd | 半導体装置 |
| EP1353385B1 (en) * | 2001-01-19 | 2014-09-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| ATE532211T1 (de) * | 2006-08-31 | 2011-11-15 | Nxp Bv | Verfahren zur herstellung eines bipolaren transistors |
| US8093621B2 (en) * | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
| EP2317553B1 (en) * | 2009-10-28 | 2012-12-26 | STMicroelectronics Srl | Double-sided semiconductor structure and method for manufacturing the same |
| JP5633992B2 (ja) * | 2010-06-11 | 2014-12-03 | トヨタ自動車株式会社 | 半導体装置および半導体装置の製造方法 |
| US20130128654A1 (en) * | 2011-06-10 | 2013-05-23 | Shinichi Yoneda | Nonvolatile memory element, method of manufacturing nonvolatile memory element, method of initial breakdown of nonvolatile memory element, and nonvolatile memory device |
| JP5806535B2 (ja) * | 2011-07-20 | 2015-11-10 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
| CN103066116B (zh) * | 2011-10-24 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 双极晶体管器件及制造方法 |
| GB2524699C (en) * | 2013-02-07 | 2018-11-14 | Wood John | A bipolar junction transistor structure |
| US9685502B2 (en) * | 2013-02-07 | 2017-06-20 | John Wood | Bipolar junction transistor structure |
| US9245994B2 (en) * | 2013-02-07 | 2016-01-26 | Texas Instruments Incorporated | MOSFET with curved trench feature coupling termination trench to active trench |
| CN103325821A (zh) * | 2013-06-19 | 2013-09-25 | 南宁市柳川华邦电子有限公司 | 一种绝缘栅双极型双向可选功率管 |
| CN104919595B (zh) * | 2013-06-24 | 2019-06-07 | 理想能量有限公司 | 具有双向双极晶体管的系统、电路、器件和方法 |
-
2015
- 2015-10-13 GB GB1608361.0A patent/GB2535381B/en active Active
- 2015-10-13 KR KR1020177008934A patent/KR102382856B1/ko active Active
- 2015-10-13 EP EP15850860.6A patent/EP3155664B1/en active Active
- 2015-10-13 WO PCT/US2015/055388 patent/WO2016061140A1/en not_active Ceased
- 2015-10-13 JP JP2017519858A patent/JP6559232B2/ja active Active
- 2015-10-13 CN CN201580054265.2A patent/CN106796951B/zh active Active
-
2017
- 2017-04-13 US US15/486,921 patent/US10418471B2/en active Active
-
2019
- 2019-08-30 US US16/557,284 patent/US10580885B1/en active Active
-
2020
- 2020-01-27 US US16/773,031 patent/US10892354B2/en active Active
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