CN106796951B - 双基极双向双极晶体管两个相对表面上的场板：器件、方法和系统 - Google Patents

双基极双向双极晶体管两个相对表面上的场板：器件、方法和系统 Download PDF

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CN106796951B
CN106796951B CN201580054265.2A CN201580054265A CN106796951B CN 106796951 B CN106796951 B CN 106796951B CN 201580054265 A CN201580054265 A CN 201580054265A CN 106796951 B CN106796951 B CN 106796951B
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emitter
field plate
type
base contact
semiconductor wafer
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CN106796951A (zh
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威廉·C·亚历山大
理查德·A·布兰查德
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Ideal Power Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/341—Unijunction transistors, i.e. double base diodes

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  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
CN201580054265.2A 2014-10-13 2015-10-13 双基极双向双极晶体管两个相对表面上的场板：器件、方法和系统 Active CN106796951B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462063090P 2014-10-13 2014-10-13
US62/063,090 2014-10-13
PCT/US2015/055388 WO2016061140A1 (en) 2014-10-13 2015-10-13 Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems

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CN106796951A CN106796951A (zh) 2017-05-31
CN106796951B true CN106796951B (zh) 2020-08-18

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US (3) US10418471B2 (https=)
EP (1) EP3155664B1 (https=)
JP (1) JP6559232B2 (https=)
KR (1) KR102382856B1 (https=)
CN (1) CN106796951B (https=)
GB (1) GB2535381B (https=)
WO (1) WO2016061140A1 (https=)

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* Cited by examiner, † Cited by third party
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US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11069797B2 (en) 2016-05-25 2021-07-20 Ideal Power Inc. Ruggedized symmetrically bidirectional bipolar power transistor
US11233141B2 (en) 2018-01-16 2022-01-25 Ipower Semiconductor Self-aligned and robust IGBT devices
US20190245070A1 (en) * 2018-02-07 2019-08-08 Ipower Semiconductor Igbt devices with 3d backside structures for field stop and reverse conduction
CN112909031A (zh) * 2019-12-04 2021-06-04 半导体元件工业有限责任公司 半导体器件
US11411557B2 (en) 2020-05-18 2022-08-09 Ideal Power Inc. Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
US11496129B2 (en) 2020-06-08 2022-11-08 Ideal Power Inc. Method and system of current sharing among bidirectional double-base bipolar junction transistors
US11777018B2 (en) 2020-11-19 2023-10-03 Ideal Power Inc. Layout to reduce current crowding at endpoints
CN116686095A (zh) * 2020-12-10 2023-09-01 理想能量有限公司 操作双向双基极双极结型晶体管(b-tran)的方法及系统
US11881525B2 (en) 2021-08-10 2024-01-23 Ideal Power Inc. Semiconductor device with bi-directional double-base trench power switches
WO2024123521A1 (en) * 2022-12-08 2024-06-13 Ideal Power Inc. Bidirectional bipolar junction transistor devices from bonded wide and thick wafers
US12506475B2 (en) 2023-08-30 2025-12-23 Ideal Power Inc. Hybrid switch circuit with bidirectional double-base bipolar junction transistors
US12388442B2 (en) 2023-12-06 2025-08-12 Ideal Power Inc. Unidirectional hybrid switch circuit
US12506476B2 (en) 2024-02-21 2025-12-23 Ideal Power Inc. Methods and systems of operating a double-sided double-base bipolar junction transistor

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US6323509B1 (en) * 1999-01-07 2001-11-27 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device including a free wheeling diode and method of manufacturing for same
US20130075760A1 (en) * 2010-06-11 2013-03-28 Denso Corporation Semiconductor device and method for manufacturing semiconductor device
CN103325821A (zh) * 2013-06-19 2013-09-25 南宁市柳川华邦电子有限公司 一种绝缘栅双极型双向可选功率管
US20140217497A1 (en) * 2013-02-07 2014-08-07 Texas Instruments Incorporated Mosfet with curved trench feature coupling termination trench to active trench
WO2014122472A1 (en) * 2013-02-07 2014-08-14 John Wood A bipolar junction transistor structure

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US20130075760A1 (en) * 2010-06-11 2013-03-28 Denso Corporation Semiconductor device and method for manufacturing semiconductor device
US20140217497A1 (en) * 2013-02-07 2014-08-07 Texas Instruments Incorporated Mosfet with curved trench feature coupling termination trench to active trench
WO2014122472A1 (en) * 2013-02-07 2014-08-14 John Wood A bipolar junction transistor structure
CN103325821A (zh) * 2013-06-19 2013-09-25 南宁市柳川华邦电子有限公司 一种绝缘栅双极型双向可选功率管

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KR102382856B1 (ko) 2022-04-05
EP3155664A4 (en) 2017-06-28
EP3155664A1 (en) 2017-04-19
KR20170068459A (ko) 2017-06-19
GB2535381A (en) 2016-08-17
US20190097031A1 (en) 2019-03-28
JP6559232B2 (ja) 2019-08-14
GB2535381B (en) 2016-12-28
JP2017535074A (ja) 2017-11-24
US20200243674A1 (en) 2020-07-30
WO2016061140A1 (en) 2016-04-21
CN106796951A (zh) 2017-05-31
US10418471B2 (en) 2019-09-17
EP3155664B1 (en) 2019-04-03
US10892354B2 (en) 2021-01-12
US10580885B1 (en) 2020-03-03
US20200058780A1 (en) 2020-02-20
GB201608361D0 (en) 2016-06-29

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