JP2017532782A - シリコンオンインシュレータ基板を備えた埋め込みメモリデバイスの製造方法 - Google Patents
シリコンオンインシュレータ基板を備えた埋め込みメモリデバイスの製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000012212 insulator Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000002513 implantation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
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- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Abstract
Description
Claims (10)
- 半導体デバイスを形成する方法であって、
シリコンと、前記シリコンの直上の第1の絶縁層と、前記第1の絶縁層の直上のシリコン層と、を含む基板を準備する工程と、
前記基板の第1の区域内に前記第1の絶縁層及び前記シリコン層を維持しながら、前記基板の第2の区域から前記シリコン層及び前記絶縁層を除去するためにエッチングプロセスを実行する工程と、
前記基板の前記第1の区域内の前記シリコン層の上、及び前記基板の前記第2の区域内の前記シリコンの上に第2の絶縁層を形成する工程と、
それぞれが前記第2の絶縁層、前記シリコン層、及び前記第1絶縁層を通って延在し、前記シリコンへと延在する、第1の複数のトレンチを、前記基板の前記第1の区域内に形成する工程と、
それぞれが前記第2の絶縁層を通って延在し、前記シリコンへと延在する、第2の複数のトレンチを、前記基板の前記第2の区域内に形成する工程と、
絶縁材を、前記第1及び第2の複数のトレンチ内に形成する工程と、
ロジックデバイスを前記基板の前記第1の区域内に形成する工程であって、前記ロジックデバイスのそれぞれを形成する工程が
前記シリコン層に離間したソース及びドレイン領域を形成する工程と、
前記シリコン層の一部の上にそれとは絶縁された状態で、かつ前記ソース及びドレイン領域間に導電ゲートを形成する工程と、を含む工程と、
メモリセルを前記基板の前記第2の区域内に形成する工程であって、前記メモリセルのそれぞれを形成する工程が、
前記シリコン内に離間した第2のソース及び第2のドレイン領域を形成し、その間にチャネル領域を画定する工程と、
前記チャネル領域の第1の部分の上にそれとは絶縁された浮遊ゲートを形成する工程と、
前記チャネル領域の第2の部分の上にそれとは絶縁された選択ゲートを形成する工程と、を含む工程と、を含む方法。 - 前記第2の区域内に形成された前記第2のソース及び第2のドレイン領域は、前記第1の区域内に形成された前記ソース及びドレイン領域が延在するより深く前記基板へと延在する、請求項1に記載の方法。
- 前記第2の区域内に形成された前記第2のソース及び第2のドレイン領域は、前記第1の区域内の前記シリコン層の厚さより深く前記基板へと延在する、請求項1に記載の方法。
- 第2の絶縁層の上に第3の絶縁層を形成する工程を更に含み、前記第1及び第2のトレンチが、前記第3の絶縁層を通って延在する、請求項1に記載の方法。
- 前記メモリセルのそれぞれを形成する工程が、
前記浮遊ゲートの上にそれとは絶縁された制御ゲートを形成する工程と、
前記ソース領域の上にそれとは絶縁された消去ゲートを形成する工程とを更に含む、請求項1に記載の方法。 - 前記メモリセルのそれぞれを形成する工程が、
前記ソース領域の上にそれとは絶縁された消去ゲートを形成する工程を更に含む、請求項1に記載の方法。 - 前記導電ゲート、前記選択ゲート、及び前記消去ゲートを形成する工程が、
前記基板の前記第1及び第2の区域に第1のポリシリコン層を形成する工程と、
前記基板の前記第1の区域内の前記第1のポリシリコン層上に配設されるが、前記基板の前記第2の区域内の前記第1のポリシリコン層上に配設されない第3の絶縁層を形成する工程と、
前記基板の前記第1の区域内の前記第3の絶縁層上に配設され、前記基板の前記第2の区域内の前記第1のポリシリコン層上に配設される第2のポリシリコン層を形成する工程と、
前記基板の前記第1及び第2の区域から前記第2のポリシリコン層を除去し、前記基板の前記第2の区域内の前記第1のポリシリコン層の一部を選択的に除去して、前記消去ゲート及び前記選択ゲートを構成するそのブロックを残す、ポリシリコンエッチングを実行する工程と、
前記基板の前記第1の区域内の前記第1のポリシリコン層を選択的に除去して前記導電ゲートを構成するそのブロックを残す第2のポリシリコンエッチングを実行する工程と、を更に含む請求項1に記載の方法。 - 前記第1の区域から前記第3の絶縁材の層を除去することによって前記第1の複数のトレンチ内の前記絶縁材間に配設される前記基板の前記第1の区域内に第3の複数のトレンチを形成する工程と、
前記第2の区域から前記第3の絶縁材の層を除去することによって前記第2の複数のトレンチ内の前記絶縁材間に配設される前記基板の前記第2の区域内に第4の複数のトレンチを形成する工程と、を更に含む請求項7に記載の方法。 - 前記導電ゲートのそれぞれが、前記第3のトレンチのうちの1つに少なくとも部分的に配設され、
前記浮遊ゲートのそれぞれが、前記第4のトレンチのうちの1つに少なくとも部分的に配設され、
前記選択ゲートのそれぞれが、前記第4のトレンチのうちの1つに少なくとも部分的に配設される、請求項8に記載の方法。 - 前記メモリセルのそれぞれを形成する工程が、
前記浮遊ゲートの上にそれとは絶縁された制御ゲートを形成する工程と、
前記ソース領域の上にそれとは絶縁された状態で、かつ前記第4のトレンチのうちの1つに少なくとも部分的に配設される消去ゲートを形成する工程と、を更に含む請求項9に記載の方法。
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PCT/US2015/043429 WO2016043857A1 (en) | 2014-09-19 | 2015-08-03 | Method of making embedded memory device with silicon-on-insulator substrate |
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KR20180132778A (ko) * | 2016-04-08 | 2018-12-12 | 실리콘 스토리지 테크놀로지 인크 | 감소된 크기의 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법 |
JP2021523575A (ja) * | 2018-05-14 | 2021-09-02 | シリコン ストーリッジ テクノロージー インコーポレイテッドSilicon Storage Technology, Inc. | シリコンオンインシュレータ基板を備えた埋め込みメモリデバイスを製造する方法 |
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US10541205B1 (en) * | 2017-02-14 | 2020-01-21 | Intel Corporation | Manufacture of interconnects for integration of multiple integrated circuits |
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KR102119335B1 (ko) | 2016-04-08 | 2020-06-04 | 실리콘 스토리지 테크놀로지 인크 | 감소된 크기의 분리형 게이트 비휘발성 플래시 메모리 셀 및 이를 제조하는 방법 |
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CN107078035B (zh) | 2018-12-21 |
CN107078035A (zh) | 2017-08-18 |
WO2016043857A1 (en) | 2016-03-24 |
KR20170045386A (ko) | 2017-04-26 |
KR101799250B1 (ko) | 2017-11-17 |
EP3195349A1 (en) | 2017-07-26 |
TW201614776A (en) | 2016-04-16 |
TWI613763B (zh) | 2018-02-01 |
JP6324621B2 (ja) | 2018-05-16 |
US20160086962A1 (en) | 2016-03-24 |
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