JP2017528922A - ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム - Google Patents

ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム Download PDF

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Publication number
JP2017528922A
JP2017528922A JP2017521034A JP2017521034A JP2017528922A JP 2017528922 A JP2017528922 A JP 2017528922A JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017521034 A JP2017521034 A JP 2017521034A JP 2017528922 A JP2017528922 A JP 2017528922A
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packet
light
amorphous silicon
pulse
film
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Japanese (ja)
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JP2017528922A5 (https=
Inventor
ユーリ・エロキン
イゴール・サマルツェフ
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アイピージー フォトニクス コーポレーション
アイピージー フォトニクス コーポレーション
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Publication of JP2017528922A publication Critical patent/JP2017528922A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Glass Compositions (AREA)
JP2017521034A 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム Pending JP2017528922A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Related Child Applications (1)

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JP2020148871A Division JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

Publications (2)

Publication Number Publication Date
JP2017528922A true JP2017528922A (ja) 2017-09-28
JP2017528922A5 JP2017528922A5 (https=) 2019-12-05

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JP2017521034A Pending JP2017528922A (ja) 2014-07-03 2015-07-01 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
JP2020148871A Active JP7111783B2 (ja) 2014-07-03 2020-09-04 ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム

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Country Status (6)

Country Link
US (2) US9941120B2 (https=)
EP (1) EP3164885B1 (https=)
JP (2) JP2017528922A (https=)
KR (1) KR102439093B1 (https=)
CN (2) CN109979805B (https=)
WO (2) WO2016004175A1 (https=)

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JP2017528922A (ja) * 2014-07-03 2017-09-28 アイピージー フォトニクス コーポレーション ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
CN109154562A (zh) * 2016-05-11 2019-01-04 Ipg光子公司 用于测量平板显示器的光纤激光退火多晶硅薄膜的形态特性的过程和系统
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
CN111065759B (zh) * 2017-07-31 2022-05-10 Ipg光子公司 激光装置和对薄膜进行加工的方法
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US10802120B1 (en) * 2019-08-20 2020-10-13 Luminar Technologies, Inc. Coherent pulsed lidar system
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element
US20220043202A1 (en) 2020-08-10 2022-02-10 Luminar, Llc Semiconductor optical amplifier with bragg grating

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WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
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JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
JP2002280324A (ja) * 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
JP2007508694A (ja) * 2003-10-10 2007-04-05 ジーエスアイ ルモニクス コーポレイション ピコ秒レーザでのメモリリンク処理のためのレーザに基づくシステム
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Also Published As

Publication number Publication date
KR20170029537A (ko) 2017-03-15
CN109979805B (zh) 2023-02-21
US20160013057A1 (en) 2016-01-14
JP2020205439A (ja) 2020-12-24
JP7111783B2 (ja) 2022-08-02
USRE48398E1 (en) 2021-01-19
EP3164885B1 (en) 2021-08-25
WO2016004175A1 (en) 2016-01-07
WO2016004174A1 (en) 2016-01-07
CN106663655A (zh) 2017-05-10
CN106663655B (zh) 2019-05-07
US9941120B2 (en) 2018-04-10
CN109979805A (zh) 2019-07-05
EP3164885A1 (en) 2017-05-10
KR102439093B1 (ko) 2022-08-31
EP3164885A4 (en) 2018-03-07

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