CN109979805B - 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 - Google Patents

通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Download PDF

Info

Publication number
CN109979805B
CN109979805B CN201910297108.4A CN201910297108A CN109979805B CN 109979805 B CN109979805 B CN 109979805B CN 201910297108 A CN201910297108 A CN 201910297108A CN 109979805 B CN109979805 B CN 109979805B
Authority
CN
China
Prior art keywords
film
packet
light
pulse
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910297108.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN109979805A (zh
Inventor
尤里·叶罗欣
伊格尔·山马尔特瑟夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
IPG Photonics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPG Photonics Corp filed Critical IPG Photonics Corp
Publication of CN109979805A publication Critical patent/CN109979805A/zh
Application granted granted Critical
Publication of CN109979805B publication Critical patent/CN109979805B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06745—Tapering of the fibre, core or active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Glass Compositions (AREA)
CN201910297108.4A 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统 Active CN109979805B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462020501P 2014-07-03 2014-07-03
US62/020,501 2014-07-03
CN201580036440.5A CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
PCT/US2015/038785 WO2016004175A1 (en) 2014-07-03 2015-07-01 Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580036440.5A Division CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Publications (2)

Publication Number Publication Date
CN109979805A CN109979805A (zh) 2019-07-05
CN109979805B true CN109979805B (zh) 2023-02-21

Family

ID=55019961

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910297108.4A Active CN109979805B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
CN201580036440.5A Active CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201580036440.5A Active CN106663655B (zh) 2014-07-03 2015-07-01 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统

Country Status (6)

Country Link
US (2) US9941120B2 (https=)
EP (1) EP3164885B1 (https=)
JP (2) JP2017528922A (https=)
KR (1) KR102439093B1 (https=)
CN (2) CN109979805B (https=)
WO (2) WO2016004175A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017528922A (ja) * 2014-07-03 2017-09-28 アイピージー フォトニクス コーポレーション ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
CN109154562A (zh) * 2016-05-11 2019-01-04 Ipg光子公司 用于测量平板显示器的光纤激光退火多晶硅薄膜的形态特性的过程和系统
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
CN111065759B (zh) * 2017-07-31 2022-05-10 Ipg光子公司 激光装置和对薄膜进行加工的方法
US11600491B2 (en) * 2017-07-31 2023-03-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
US11673208B2 (en) 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
JP7335236B2 (ja) * 2017-10-13 2023-08-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク スポットビーム及びラインビーム結晶化のためのシステムおよび方法
CN108550580B (zh) * 2018-04-27 2019-10-11 武汉华星光电技术有限公司 Tft阵列基板
CN108615680B (zh) * 2018-04-28 2020-03-10 京东方科技集团股份有限公司 多晶硅层及其制造方法、薄膜晶体管及阵列基板的制造方法
US10802120B1 (en) * 2019-08-20 2020-10-13 Luminar Technologies, Inc. Coherent pulsed lidar system
US12481034B2 (en) 2020-08-10 2025-11-25 Luminar Technologies, Inc. Lidar system with input optical element
US20220043202A1 (en) 2020-08-10 2022-02-10 Luminar, Llc Semiconductor optical amplifier with bragg grating

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645272A (ja) * 1992-07-21 1994-02-18 Hitachi Ltd レーザアニール装置
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
JP2002280324A (ja) * 2001-03-16 2002-09-27 Sony Corp レーザ装置
WO2003043070A1 (fr) * 2001-11-12 2003-05-22 Sony Corporation Dispositif de recuit laser et procede de fabrication d'un transistor a couches minces
GB2385460B (en) * 2002-02-18 2004-04-14 Univ Southampton "Pulsed light sources"
JP2004063924A (ja) * 2002-07-31 2004-02-26 Mitsubishi Heavy Ind Ltd レーザアニール方法及び装置
US6925216B2 (en) * 2003-05-30 2005-08-02 The Regents Of The University Of California Direct-patterned optical waveguides on amorphous silicon films
JP5072197B2 (ja) * 2004-06-18 2012-11-14 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP2006086447A (ja) * 2004-09-17 2006-03-30 Sharp Corp 半導体薄膜の製造方法および半導体薄膜の製造装置
US7585791B2 (en) * 2004-10-20 2009-09-08 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device
US7508853B2 (en) * 2004-12-07 2009-03-24 Imra, America, Inc. Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7715459B2 (en) * 2005-11-01 2010-05-11 Cymer, Inc. Laser system
EP1974422A4 (en) * 2005-12-15 2011-12-07 Laser Abrasive Technologies Llc METHOD AND DEVICE FOR TREATING SOLID MATERIALS USING HARD FIBER
JP5227552B2 (ja) * 2006-08-31 2013-07-03 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法、並びに半導体装置
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
US8009705B2 (en) * 2007-07-05 2011-08-30 Mobius Photonics, Inc. Fiber MOPA system without stimulated brillouin scattering
US8630320B2 (en) * 2007-08-31 2014-01-14 Deep Photonics Corporation Method and apparatus for a hybrid mode-locked fiber laser
US20090246530A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method For Fabricating Thin Films
US20090246413A1 (en) * 2008-03-27 2009-10-01 Imra America, Inc. Method for fabricating thin films
WO2009150733A1 (ja) * 2008-06-12 2009-12-17 株式会社Ihi レーザアニール方法及びレーザアニール装置
CA2743648C (en) * 2008-11-21 2014-11-04 Institut National D'optique Spectrally tailored pulsed fiber laser oscillator
US8372667B2 (en) * 2009-04-20 2013-02-12 Applied Materials, Inc. Fiber laser substrate processing
US8068705B2 (en) * 2009-09-14 2011-11-29 Gapontsev Valentin P Single-mode high-power fiber laser system
US20110133129A1 (en) * 2009-12-07 2011-06-09 Imra America, Inc. Method of tuning properties of thin films
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
US9316545B2 (en) 2011-07-11 2016-04-19 California Institute Of Technology Scanning measurement of Seebeck coefficient of a heated sample
US8817827B2 (en) * 2011-08-17 2014-08-26 Veralas, Inc. Ultraviolet fiber laser system
US8774236B2 (en) * 2011-08-17 2014-07-08 Veralas, Inc. Ultraviolet fiber laser system
GB2505409B (en) * 2012-08-27 2016-08-03 V-Gen Ltd Generation of narrow line width high power optical pulses
US9413137B2 (en) * 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
US10069271B2 (en) * 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
JP2017528922A (ja) * 2014-07-03 2017-09-28 アイピージー フォトニクス コーポレーション ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
US9246303B1 (en) * 2014-10-31 2016-01-26 Raytheon Company Method and apparatus for temporally concentrating pump power to support generation of high peak-power pulse bursts or other time-varying laser output waveforms

Also Published As

Publication number Publication date
KR20170029537A (ko) 2017-03-15
US20160013057A1 (en) 2016-01-14
JP2020205439A (ja) 2020-12-24
JP2017528922A (ja) 2017-09-28
JP7111783B2 (ja) 2022-08-02
USRE48398E1 (en) 2021-01-19
EP3164885B1 (en) 2021-08-25
WO2016004175A1 (en) 2016-01-07
WO2016004174A1 (en) 2016-01-07
CN106663655A (zh) 2017-05-10
CN106663655B (zh) 2019-05-07
US9941120B2 (en) 2018-04-10
CN109979805A (zh) 2019-07-05
EP3164885A1 (en) 2017-05-10
KR102439093B1 (ko) 2022-08-31
EP3164885A4 (en) 2018-03-07

Similar Documents

Publication Publication Date Title
CN109979805B (zh) 通过光纤激光器使非晶硅衬底均匀再结晶的工艺和系统
US7863541B2 (en) Laser annealing apparatus and semiconductor device manufacturing method
KR100860114B1 (ko) 레이져 장치
US10957541B2 (en) Short pulse fiber laser for LTPS crystallization
CA2225152C (en) Device for controlling a laser source with multiple laser units for the energy and spatial optimisation of a laser surface treatment
KR101446821B1 (ko) 레이저 빔 공간 강도 프로파일의 최적화를 위한 시스템 및 방법
KR20180131667A (ko) 고체 레이저 결정화 장치
US20120111267A1 (en) Crystallization apparatus using sequential lateral solidification
CN105118773B (zh) 准分子激光退火装置和方法
KR100683662B1 (ko) 레이저 가공 장치
KR100603330B1 (ko) 레이저 결정화 장치
Paetzel et al. Laser annealing of LTPS
JP4854244B2 (ja) レーザアニール方法およびその装置
KR101335639B1 (ko) 레이저 결정화 장치 및 이를 이용한 실리콘 결정화 방법
KR100603319B1 (ko) 레이저 가공 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant