JP2017524261A - Led用担体 - Google Patents

Led用担体 Download PDF

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Publication number
JP2017524261A
JP2017524261A JP2017506875A JP2017506875A JP2017524261A JP 2017524261 A JP2017524261 A JP 2017524261A JP 2017506875 A JP2017506875 A JP 2017506875A JP 2017506875 A JP2017506875 A JP 2017506875A JP 2017524261 A JP2017524261 A JP 2017524261A
Authority
JP
Japan
Prior art keywords
carrier
led
contact surface
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017506875A
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English (en)
Japanese (ja)
Inventor
トーマス ファイヒティンガー,
トーマス ファイヒティンガー,
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of JP2017524261A publication Critical patent/JP2017524261A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12Overvoltage protection resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8583Means for heat extraction or cooling not being in contact with the bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2017506875A 2014-08-08 2015-08-07 Led用担体 Pending JP2017524261A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102014111363.2 2014-08-08
DE102014111363 2014-08-08
DE102014115375.8 2014-10-22
DE102014115375.8A DE102014115375A1 (de) 2014-08-08 2014-10-22 Träger für eine LED
PCT/EP2015/068280 WO2016020537A1 (de) 2014-08-08 2015-08-07 Träger für eine led

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019003096A Division JP2019083328A (ja) 2014-08-08 2019-01-11 Led用担体

Publications (1)

Publication Number Publication Date
JP2017524261A true JP2017524261A (ja) 2017-08-24

Family

ID=55134667

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017506875A Pending JP2017524261A (ja) 2014-08-08 2015-08-07 Led用担体
JP2019003096A Pending JP2019083328A (ja) 2014-08-08 2019-01-11 Led用担体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019003096A Pending JP2019083328A (ja) 2014-08-08 2019-01-11 Led用担体

Country Status (6)

Country Link
US (1) US9978912B2 (enExample)
EP (1) EP3178117B1 (enExample)
JP (2) JP2017524261A (enExample)
CN (1) CN106575692B (enExample)
DE (2) DE102014115375A1 (enExample)
WO (1) WO2016020537A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016122014A1 (de) * 2016-11-16 2018-05-17 Epcos Ag Leistungsmodul mit verringerter Defektanfälligkeit und Verwendung desselben
DE102017118490B4 (de) * 2017-08-14 2025-03-27 Tdk Electronics Ag Anordnung mit LED-Modul
DE102017126268A1 (de) 2017-11-09 2019-05-09 Osram Opto Semiconductors Gmbh Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150386A (ja) * 2003-11-14 2005-06-09 Stanley Electric Co Ltd 半導体装置及びその製造方法
JP2006295079A (ja) * 2005-04-14 2006-10-26 Tdk Corp 発光装置
JP2008109079A (ja) * 2006-09-26 2008-05-08 Kyocera Corp 表面実装型発光素子用配線基板および発光装置
JP2008270325A (ja) * 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 静電気対策部品およびこれを用いた発光ダイオードモジュール
JP2011523778A (ja) * 2008-05-21 2011-08-18 エプコス アクチエンゲゼルシャフト 電気的構成要素アセンブリ
JP2011187855A (ja) * 2010-03-11 2011-09-22 Panasonic Corp 多層セラミック基板の製造方法
JP2012074501A (ja) * 2010-09-28 2012-04-12 Stanley Electric Co Ltd 光半導体素子、発光ダイオード、およびそれらの製造方法
JP2014116411A (ja) * 2012-12-07 2014-06-26 Kyocera Corp 発光素子搭載用基板および発光装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3475910B2 (ja) 2000-05-24 2003-12-10 株式会社村田製作所 電子部品、電子部品の製造方法および回路基板
US7279724B2 (en) 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
JP4915058B2 (ja) * 2005-06-06 2012-04-11 パナソニック株式会社 Led部品およびその製造方法
US20070200133A1 (en) * 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
US7505239B2 (en) 2005-04-14 2009-03-17 Tdk Corporation Light emitting device
WO2007058438A1 (en) * 2005-11-18 2007-05-24 Amosense Co., Ltd. Electronic parts packages
US20090020876A1 (en) 2007-07-20 2009-01-22 Hertel Thomas A High temperature packaging for semiconductor devices
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
DE102008024480A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
TWI533483B (zh) * 2010-08-09 2016-05-11 Lg伊諾特股份有限公司 發光裝置
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150386A (ja) * 2003-11-14 2005-06-09 Stanley Electric Co Ltd 半導体装置及びその製造方法
JP2006295079A (ja) * 2005-04-14 2006-10-26 Tdk Corp 発光装置
JP2008109079A (ja) * 2006-09-26 2008-05-08 Kyocera Corp 表面実装型発光素子用配線基板および発光装置
JP2008270325A (ja) * 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 静電気対策部品およびこれを用いた発光ダイオードモジュール
JP2011523778A (ja) * 2008-05-21 2011-08-18 エプコス アクチエンゲゼルシャフト 電気的構成要素アセンブリ
JP2011187855A (ja) * 2010-03-11 2011-09-22 Panasonic Corp 多層セラミック基板の製造方法
JP2012074501A (ja) * 2010-09-28 2012-04-12 Stanley Electric Co Ltd 光半導体素子、発光ダイオード、およびそれらの製造方法
JP2014116411A (ja) * 2012-12-07 2014-06-26 Kyocera Corp 発光素子搭載用基板および発光装置

Also Published As

Publication number Publication date
EP3178117B1 (de) 2020-07-15
DE202015009825U1 (de) 2020-07-22
US20170229617A1 (en) 2017-08-10
WO2016020537A1 (de) 2016-02-11
DE102014115375A1 (de) 2016-02-11
CN106575692A (zh) 2017-04-19
CN106575692B (zh) 2019-07-05
JP2019083328A (ja) 2019-05-30
US9978912B2 (en) 2018-05-22
EP3178117A1 (de) 2017-06-14

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