CN106575692B - 用于led的载体 - Google Patents

用于led的载体 Download PDF

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Publication number
CN106575692B
CN106575692B CN201580042669.XA CN201580042669A CN106575692B CN 106575692 B CN106575692 B CN 106575692B CN 201580042669 A CN201580042669 A CN 201580042669A CN 106575692 B CN106575692 B CN 106575692B
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CN
China
Prior art keywords
carrier
upside
contact surface
leds
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580042669.XA
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English (en)
Chinese (zh)
Other versions
CN106575692A (zh
Inventor
T.费希廷格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of CN106575692A publication Critical patent/CN106575692A/zh
Application granted granted Critical
Publication of CN106575692B publication Critical patent/CN106575692B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN201580042669.XA 2014-08-08 2015-08-07 用于led的载体 Active CN106575692B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102014111363.2 2014-08-08
DE102014111363 2014-08-08
DE102014115375.8 2014-10-22
DE102014115375.8A DE102014115375A1 (de) 2014-08-08 2014-10-22 Träger für eine LED
PCT/EP2015/068280 WO2016020537A1 (de) 2014-08-08 2015-08-07 Träger für eine led

Publications (2)

Publication Number Publication Date
CN106575692A CN106575692A (zh) 2017-04-19
CN106575692B true CN106575692B (zh) 2019-07-05

Family

ID=55134667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580042669.XA Active CN106575692B (zh) 2014-08-08 2015-08-07 用于led的载体

Country Status (6)

Country Link
US (1) US9978912B2 (enExample)
EP (1) EP3178117B1 (enExample)
JP (2) JP2017524261A (enExample)
CN (1) CN106575692B (enExample)
DE (2) DE102014115375A1 (enExample)
WO (1) WO2016020537A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016122014A1 (de) * 2016-11-16 2018-05-17 Epcos Ag Leistungsmodul mit verringerter Defektanfälligkeit und Verwendung desselben
DE102017118490B4 (de) * 2017-08-14 2025-03-27 Tdk Electronics Ag Anordnung mit LED-Modul
DE102017126268A1 (de) 2017-11-09 2019-05-09 Osram Opto Semiconductors Gmbh Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3475910B2 (ja) 2000-05-24 2003-12-10 株式会社村田製作所 電子部品、電子部品の製造方法および回路基板
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
US7279724B2 (en) 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
JP4915058B2 (ja) * 2005-06-06 2012-04-11 パナソニック株式会社 Ｌｅｄ部品およびその製造方法
US20070200133A1 (en) * 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
JP4146849B2 (ja) 2005-04-14 2008-09-10 Ｔｄｋ株式会社 発光装置
US7505239B2 (en) 2005-04-14 2009-03-17 Tdk Corporation Light emitting device
WO2007058438A1 (en) * 2005-11-18 2007-05-24 Amosense Co., Ltd. Electronic parts packages
JP2008109079A (ja) * 2006-09-26 2008-05-08 Kyocera Corp 表面実装型発光素子用配線基板および発光装置
JP2008270325A (ja) 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 静電気対策部品およびこれを用いた発光ダイオードモジュール
US20090020876A1 (en) 2007-07-20 2009-01-22 Hertel Thomas A High temperature packaging for semiconductor devices
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
DE102008024480A1 (de) * 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
DE102008024479A1 (de) 2008-05-21 2009-12-03 Epcos Ag Elektrische Bauelementanordnung
JP2011187855A (ja) 2010-03-11 2011-09-22 Panasonic Corp 多層セラミック基板の製造方法
TWI533483B (zh) * 2010-08-09 2016-05-11 Ｌｇ伊諾特股份有限公司 發光裝置
JP5735245B2 (ja) * 2010-09-28 2015-06-17 スタンレー電気株式会社 光半導体素子、発光ダイオード、およびそれらの製造方法
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung
JP2014116411A (ja) 2012-12-07 2014-06-26 Kyocera Corp 発光素子搭載用基板および発光装置

Also Published As

Publication number Publication date
EP3178117B1 (de) 2020-07-15
DE202015009825U1 (de) 2020-07-22
US20170229617A1 (en) 2017-08-10
WO2016020537A1 (de) 2016-02-11
JP2017524261A (ja) 2017-08-24
DE102014115375A1 (de) 2016-02-11
CN106575692A (zh) 2017-04-19
JP2019083328A (ja) 2019-05-30
US9978912B2 (en) 2018-05-22
EP3178117A1 (de) 2017-06-14

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CP01 Change in the name or title of a patent holder

Address after: Munich, Germany

Patentee after: TDK Electronics Co.,Ltd.

Address before: Munich, Germany

Patentee before: EPCOS AG