JP2017516298A - 基板のトレンチ内で誘電体フィールドプレートを製造する方法、対応する基板およびそのような基板を備えたパワートランジスタ - Google Patents
基板のトレンチ内で誘電体フィールドプレートを製造する方法、対応する基板およびそのような基板を備えたパワートランジスタ Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 111
- 239000003989 dielectric material Substances 0.000 claims description 46
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 42
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
シリコンベースの基板、例えば炭化ケイ素層含む基板は、標準構成部品のために益々使用されている。例えば金属酸化物半導体トランジスタ、例えばトレンチ型金属酸化物半導体電界効果トランジスタ(トレンチMOSFET)として、または絶縁ゲート電極を有するトレンチ型バイポーラトランジスタ(トレンチIGBT)として、1.2kV以上の電圧まで遮断するパワー半導体は、そのような基板を用いて実現される。そのようなパワー半導体は、例えば電動自動車の分野、つまり例えばリチウムイオンセルベースのバッテリーのようなバッテリーを備えた自動車分野において、あるいは太陽光発電システムにおいて使用される。また微小電気機械システムもそのような基板を用いて実現することが可能である。微小電気機械システムについては、この基板はさらに、二酸化ケイ素層、窒化ケイ素層または炭化ケイ素層が堆積されたシリコン層を含み得る。
本発明によれば、基板のトレンチ内で誘電体フィールドプレートを製造するための請求項1に記載の方法が提案される。この方法は、以下のステップを含むことによって特徴付けられる:すなわち、
(a)前記トレンチの壁部および底部と、前記トレンチに隣接する前記基板の表面区域とに、誘電体構造部を堆積させるステップであって、前記誘電体構造部に含まれている1つ以上の誘電体材料は、前記壁部、前記底部および前記基板の前記表面区域を形成する1つ以上の材料とは異なったものである、ステップと、
(b)前記トレンチを充填し、かつ前記誘電体構造部を覆い、かつ前記1つ以上の誘電体材料とは異なっているストッパー材料を堆積させるステップであって、前記ストッパー材料も前記基板の1つ以上の材料とは異なったものである、ステップと、
(c)前記ストッパー材料の一部を、第1のエッチング剤を用いて、前記基板の前記表面区域と前記トレンチの前記壁部とを覆う前記誘電体構造部の一部が露出されるように、選択的にエッチバックするステップと、
(d)前記誘電体構造部を、前記第1のエッチング剤とは異なる第2のエッチング剤を用いて、前記基板の表面と前記壁部の上方区域とが露出されるように選択的にエッチバックするステップであって、前記壁部の下方区域および前記底部を覆う前記誘電体構造部の残余部分は残留されるものである、ステップと、
(e)前記ストッパー材料の残余部分を、前記第2のエッチング剤とは異なる第3のエッチング剤を用いて選択的にエッチバックするステップである。
図1乃至図5には、基板のトレンチ内で誘電体フィールドプレートを製造する前と製造中の基板の例示的な構造が示されており、それによって本発明によって提案される方法の実施形態の概略的なステップ並びに中間生成物が視覚化されている。
Claims (10)
- 基板(10)のトレンチ(60)内で誘電体フィールドプレート(200)を製造する方法であって、
前記方法は、
(a)前記トレンチの壁部(61)および底部(62)上に、及び前記トレンチに隣接する前記基板(10)の表面区域(11)上に、誘電体構造部を堆積させるステップであって、前記誘電体構造部に含まれている1つ以上の誘電体材料は、前記壁部(61)、前記底部(62)および前記基板の前記表面区域を形成する1つ以上の材料とは異なったものである、ステップと、
(b)前記トレンチ(60)を充填し、かつ前記誘電体構造部を覆い、かつ前記1つ以上の誘電体材料とは異なっているストッパー材料(90)を堆積させるステップであって、前記ストッパー材料(90)も前記基板の1つ以上の材料とは異なったものである、ステップと、
(c)前記ストッパー材料(90)の一部を、第1のエッチング剤を用いて、前記基板の前記表面区域と前記トレンチの前記壁部とを覆う前記誘電体構造部の一部が露出されるように、選択的にエッチバックするステップと、
(d)前記誘電体構造部を、前記第1のエッチング剤とは異なる第2のエッチング剤を用いて、前記基板の表面と前記壁部(61)の上方区域とが露出されるように選択的にエッチバックするステップであって、前記壁部(61)の下方区域および前記底部(62)を覆う前記誘電体構造部の残余部分(83)は残留されるものである、ステップと、
(e)前記ストッパー材料(90)の残余部分を、前記第2のエッチング剤とは異なる第3のエッチング剤を用いて選択的にエッチバックするステップと、を含むことを特徴とする方法。 - 前記誘電体材料は、二酸化ケイ素(SiO2)、窒化ケイ素(Si3N4)、酸化アルミニウム(Al2O3)、真性ポリシリコンカーバイド(SiC)および熱酸化ポリシリコンを含む材料群から選択される、請求項1記載の方法。
- 前記壁部(61)、前記底部(62)、および前記トレンチに隣接する基板の表面区域を形成する材料は、さらなる誘電体材料である、請求項1または2記載の方法。
- 前記さらなる誘電体材料は、二酸化ケイ素(SiO2)、窒化ケイ素(Si3N4)、酸化アルミニウム(Al2O3)、真性ポリシリコンカーバイド(SiC)および熱酸化ポリシリコンを含む材料群から選択される、請求項3記載の方法。
- 前記ストッパー材料(90)は、誘電体、半導体または金属を含む材料群から選択される、請求項1から4いずれか1項記載の方法。
- 前記トレンチおよび前記誘電体構造部の残余部分は、U字形状である、請求項1から5いずれか1項記載の方法。
- 前記第1のエッチング剤および前記第3のエッチング剤は、同一である、請求項1から6いずれか1項記載の方法。
- 壁部(61)と底部(62)とを有するトレンチ(60)を備えた基板(10)であって、
前記基板(10)は、少なくとも1つの第1の誘電体層(80)からなる誘電体フィールドプレート(200)を有しており、前記誘電体フィールドプレート(200)は、前記トレンチ(60)の前記壁部(61)の下方区域と、前記トレンチ(60)の前記底部(62)とにのみ隣接していることを特徴とする基板(10)。 - 前記基板(10)は、炭化ケイ素層(12)とp型ドープされた炭化ケイ素層(20)とを含み、前記p型ドープされた炭化ケイ素層(20)は、前記炭化ケイ素層(12)上に直接配置されており、前記トレンチ(60)は、前記p型ドープされた炭化ケイ素層(20)を通って前記炭化ケイ素層(12)内まで延在し、前記前記誘電体フィールドプレート(200)は、前記トレンチ(60)の前記炭化ケイ素層(12)によって形成される前記壁部(61)の下方区域と、前記トレンチ(60)の前記底部(62)とにのみ隣接している、請求項8記載の基板(10)。
- 請求項8または9記載の誘電体フィールドプレート(200)を備えた基板(10)を含んでいることを特徴とするパワートランジスタ。
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DE102014206361.2A DE102014206361A1 (de) | 2014-04-03 | 2014-04-03 | Verfahren zur Herstellung einer dielektrischen Feldplatte in einem Graben eines Substrats, nach dem Verfahren erhältliches Substrat und Leistungstransistor mit einem solchen Substrat |
DE102014206361.2 | 2014-04-03 | ||
PCT/EP2015/054821 WO2015150023A1 (de) | 2014-04-03 | 2015-03-09 | Verfahren zur herstellung einer dielektrischen feldplatte in einem graben eines substrats, entsprechende substrat und leistungstransistor |
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GB201607672D0 (en) * | 2016-05-03 | 2016-06-15 | Rolls Royce Plc | A signal transmitting component |
CN108206135B (zh) * | 2016-12-20 | 2020-08-04 | 中芯国际集成电路制造(上海)有限公司 | 一种沟槽型igbt及其制造方法和电子装置 |
CN110767740B (zh) * | 2018-07-27 | 2021-10-15 | 无锡华润上华科技有限公司 | 半导体器件及其制造方法 |
US10712500B2 (en) * | 2018-10-17 | 2020-07-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method of the same |
CN112993006B (zh) * | 2019-12-12 | 2022-08-12 | 珠海格力电器股份有限公司 | 一种终端结构、其制作方法及电子器件 |
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EP2339636A1 (en) * | 2009-12-28 | 2011-06-29 | STMicroelectronics Srl | Power semiconductor device and manufacturing method |
JP2011216651A (ja) * | 2010-03-31 | 2011-10-27 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2014056912A (ja) * | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
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US6262453B1 (en) | 1998-04-24 | 2001-07-17 | Magepower Semiconductor Corp. | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
GB0405325D0 (en) * | 2004-03-10 | 2004-04-21 | Koninkl Philips Electronics Nv | Trench-gate transistors and their manufacture |
JP2009026809A (ja) * | 2007-07-17 | 2009-02-05 | Toyota Motor Corp | 半導体装置とその製造方法 |
US8198678B2 (en) | 2009-12-09 | 2012-06-12 | Infineon Technologies Austria Ag | Semiconductor device with improved on-resistance |
EP2472573A1 (en) * | 2011-01-04 | 2012-07-04 | Nxp B.V. | Vertical transistor manufacturing method and vertical transistor |
US8836024B2 (en) * | 2012-03-20 | 2014-09-16 | Semiconductor Components Industries, Llc | Electronic device including a trench and a conductive structure therein having a contact within a Schottky region and a process of forming the same |
JP6299102B2 (ja) * | 2012-08-07 | 2018-03-28 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
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EP2339636A1 (en) * | 2009-12-28 | 2011-06-29 | STMicroelectronics Srl | Power semiconductor device and manufacturing method |
JP2011216651A (ja) * | 2010-03-31 | 2011-10-27 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2014056912A (ja) * | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
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EP3127161A1 (de) | 2017-02-08 |
US9972690B2 (en) | 2018-05-15 |
US20170117369A1 (en) | 2017-04-27 |
WO2015150023A1 (de) | 2015-10-08 |
DE102014206361A1 (de) | 2015-10-08 |
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