JP2017505443A5 - - Google Patents

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Publication number
JP2017505443A5
JP2017505443A5 JP2016550810A JP2016550810A JP2017505443A5 JP 2017505443 A5 JP2017505443 A5 JP 2017505443A5 JP 2016550810 A JP2016550810 A JP 2016550810A JP 2016550810 A JP2016550810 A JP 2016550810A JP 2017505443 A5 JP2017505443 A5 JP 2017505443A5
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JP
Japan
Prior art keywords
ion
field effect
sensor
effect transistor
selective field
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Pending
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JP2016550810A
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English (en)
Japanese (ja)
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JP2017505443A (ja
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Priority claimed from ES201430180A external-priority patent/ES2542927R1/es
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Publication of JP2017505443A publication Critical patent/JP2017505443A/ja
Publication of JP2017505443A5 publication Critical patent/JP2017505443A5/ja
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JP2016550810A 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法 Pending JP2017505443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ESP201430180 2014-02-11
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (2)

Publication Number Publication Date
JP2017505443A JP2017505443A (ja) 2017-02-16
JP2017505443A5 true JP2017505443A5 (https=) 2017-12-21

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ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550810A Pending JP2017505443A (ja) 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法

Country Status (9)

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US (3) US10067085B2 (https=)
EP (1) EP3106865B1 (https=)
JP (1) JP2017505443A (https=)
KR (1) KR20160119096A (https=)
CN (1) CN106104265A (https=)
CA (1) CA2938155A1 (https=)
ES (2) ES2542927R1 (https=)
MX (1) MX2016010017A (https=)
WO (1) WO2015121516A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) * 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
US12117415B2 (en) * 2017-05-15 2024-10-15 Analog Devices International Unlimited Company Integrated ion sensing apparatus and methods
CA3088168A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
CN114930166A (zh) * 2020-01-13 2022-08-19 贝克曼库尔特有限公司 固态离子选择性电极
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
EP0155725A1 (en) 1984-02-27 1985-09-25 Sentron v.o.f. Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion
JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
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US9689835B2 (en) * 2011-10-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Amplified dual-gate bio field effect transistor
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KR101540254B1 (ko) * 2013-06-24 2015-07-30 경북대학교 산학협력단 당을 감지하는 화학감각수용체를 발현하는 세포를 이용한 바이오 센서 및 이를 포함하는 알츠하이머 진단 기기
US9978689B2 (en) * 2013-12-18 2018-05-22 Nxp Usa, Inc. Ion sensitive field effect transistors with protection diodes and methods of their fabrication
ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

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