KR20160119096A - 차동 측정 기반 이온 센서 및 그 제조 방법 - Google Patents

차동 측정 기반 이온 센서 및 그 제조 방법 Download PDF

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Publication number
KR20160119096A
KR20160119096A KR1020167021498A KR20167021498A KR20160119096A KR 20160119096 A KR20160119096 A KR 20160119096A KR 1020167021498 A KR1020167021498 A KR 1020167021498A KR 20167021498 A KR20167021498 A KR 20167021498A KR 20160119096 A KR20160119096 A KR 20160119096A
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KR
South Korea
Prior art keywords
ion
field effect
effect transistor
sensor
selective field
Prior art date
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Withdrawn
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KR1020167021498A
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English (en)
Korean (ko)
Inventor
안토니 발디 콜
카를로스 도밍게스 호르나
세실리아 히메네스 호르케라
세사르 페르난데스 산체스
앤드류 요베라 아단
앙겔 멜로스 도밍고
알프레도 카다르소 부스토
이자벨 부르달로 바우티스타
페란 베라 그라스
Original Assignee
콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스
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Application filed by 콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스 filed Critical 콘세호 수페리오르 데 인베스티가시오네스 시엔티피카스
Publication of KR20160119096A publication Critical patent/KR20160119096A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020167021498A 2014-02-11 2015-01-29 차동 측정 기반 이온 센서 및 그 제조 방법 Withdrawn KR20160119096A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ESP201430180 2014-02-11
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (1)

Publication Number Publication Date
KR20160119096A true KR20160119096A (ko) 2016-10-12

Family

ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167021498A Withdrawn KR20160119096A (ko) 2014-02-11 2015-01-29 차동 측정 기반 이온 센서 및 그 제조 방법

Country Status (9)

Country Link
US (3) US10067085B2 (https=)
EP (1) EP3106865B1 (https=)
JP (1) JP2017505443A (https=)
KR (1) KR20160119096A (https=)
CN (1) CN106104265A (https=)
CA (1) CA2938155A1 (https=)
ES (2) ES2542927R1 (https=)
MX (1) MX2016010017A (https=)
WO (1) WO2015121516A1 (https=)

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* Cited by examiner, † Cited by third party
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ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) * 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
US12117415B2 (en) * 2017-05-15 2024-10-15 Analog Devices International Unlimited Company Integrated ion sensing apparatus and methods
CA3088168A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
CN114930166A (zh) * 2020-01-13 2022-08-19 贝克曼库尔特有限公司 固态离子选择性电极
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
EP0155725A1 (en) 1984-02-27 1985-09-25 Sentron v.o.f. Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion
JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
CN102170820A (zh) * 2008-08-05 2011-08-31 Ph值诊断公司 用于确定哺乳动物的生理状态的装置、方法和系统
US9518953B2 (en) * 2011-09-07 2016-12-13 Technion Research And Development Foundation Ltd. Ion sensitive detector
EP2570803B1 (en) * 2011-09-16 2018-03-21 Nxp B.V. pH sensor and manufacturing method
US20130158378A1 (en) * 2011-09-22 2013-06-20 The Ohio State University Ionic barrier for floating gate in vivo biosensors
US9304103B2 (en) * 2011-09-30 2016-04-05 Sentient Technologies, Inc. Self-calibrating ion meter
US20130084214A1 (en) * 2011-09-30 2013-04-04 Frederick Quincy Johnson Ion-Selective Ion Concentration Meter
US9689835B2 (en) * 2011-10-31 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Amplified dual-gate bio field effect transistor
US9459234B2 (en) * 2011-10-31 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) CMOS compatible BioFET
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RU2649049C2 (ru) * 2013-04-18 2018-03-29 Соленис Текнолоджиз Кейман, Л.П. Устройство и способ для обнаружения и анализа отложений
KR101540254B1 (ko) * 2013-06-24 2015-07-30 경북대학교 산학협력단 당을 감지하는 화학감각수용체를 발현하는 세포를 이용한 바이오 센서 및 이를 포함하는 알츠하이머 진단 기기
US9978689B2 (en) * 2013-12-18 2018-05-22 Nxp Usa, Inc. Ion sensitive field effect transistors with protection diodes and methods of their fabrication
ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
US9733210B2 (en) * 2014-12-31 2017-08-15 International Business Machines Corporation Nanofluid sensor with real-time spatial sensing

Also Published As

Publication number Publication date
US10436743B2 (en) 2019-10-08
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
JP2017505443A (ja) 2017-02-16
US20190017958A1 (en) 2019-01-17
US20200025710A1 (en) 2020-01-23
US10067085B2 (en) 2018-09-04
US11029278B2 (en) 2021-06-08
CA2938155A1 (en) 2015-08-20
CN106104265A (zh) 2016-11-09
ES2542927A2 (es) 2015-08-12
EP3106865A1 (en) 2016-12-21
ES2542927R1 (es) 2015-09-09
MX2016010017A (es) 2016-10-07
EP3106865B1 (en) 2020-06-10
ES2818111T3 (es) 2021-04-09

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PA0105 International application

Patent event date: 20160805

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid