JP2017505443A - 差動測定に基づくイオンセンサーおよび製造方法 - Google Patents

差動測定に基づくイオンセンサーおよび製造方法 Download PDF

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Publication number
JP2017505443A
JP2017505443A JP2016550810A JP2016550810A JP2017505443A JP 2017505443 A JP2017505443 A JP 2017505443A JP 2016550810 A JP2016550810 A JP 2016550810A JP 2016550810 A JP2016550810 A JP 2016550810A JP 2017505443 A JP2017505443 A JP 2017505443A
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Prior art keywords
ion
field effect
microreservoir
chip
effect transistor
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JP2016550810A
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Japanese (ja)
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JP2017505443A5 (https=
Inventor
コール，アントニ バルディ
コール，アントニ バルディ
ホルナ，カルロス ドミンゲス
ホルナ，カルロス ドミンゲス
ホルケーラ，セシリア ヒメネス
ホルケーラ，セシリア ヒメネス
サンチェス，シーザー フェルナンデス
サンチェス，シーザー フェルナンデス
アダン，アンドリュー ロベラ
アダン，アンドリュー ロベラ
ドミンゴ，エンジェル メルロス
ドミンゴ，エンジェル メルロス
ブスト，アルフレッド カダルソ
ブスト，アルフレッド カダルソ
バウティスタ，イザベル ブルダロ
バウティスタ，イザベル ブルダロ
グラス，フェラン ベラ
グラス，フェラン ベラ
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Consejo Superior de Investigaciones Cientificas CSIC
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Consejo Superior de Investigaciones Cientificas CSIC
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Publication of JP2017505443A publication Critical patent/JP2017505443A/ja
Publication of JP2017505443A5 publication Critical patent/JP2017505443A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP2016550810A 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法 Pending JP2017505443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ESP201430180 2014-02-11
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (2)

Publication Number Publication Date
JP2017505443A true JP2017505443A (ja) 2017-02-16
JP2017505443A5 JP2017505443A5 (https=) 2017-12-21

Family

ID=52633296

Family Applications (1)

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JP2016550810A Pending JP2017505443A (ja) 2014-02-11 2015-01-29 差動測定に基づくイオンセンサーおよび製造方法

Country Status (9)

Country Link
US (3) US10067085B2 (https=)
EP (1) EP3106865B1 (https=)
JP (1) JP2017505443A (https=)
KR (1) KR20160119096A (https=)
CN (1) CN106104265A (https=)
CA (1) CA2938155A1 (https=)
ES (2) ES2542927R1 (https=)
MX (1) MX2016010017A (https=)
WO (1) WO2015121516A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023049992A (ja) * 2021-09-29 2023-04-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
JP2024178391A (ja) * 2020-01-13 2024-12-24 ベックマン コールター， インコーポレイテッド 固体イオン選択電極

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) * 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
US12117415B2 (en) * 2017-05-15 2024-10-15 Analog Devices International Unlimited Company Integrated ion sensing apparatus and methods
CA3088168A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
JP7173731B2 (ja) * 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
JP2008134255A (ja) * 2007-12-17 2008-06-12 Hitachi Ltd 生体分子検出装置及びそれを用いた生体分子検出方法
US20130069120A1 (en) * 2011-09-16 2013-03-21 Nxp B.V. Ph sensor and manufacturing method

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US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
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WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
CN102170820A (zh) * 2008-08-05 2011-08-31 Ph值诊断公司 用于确定哺乳动物的生理状态的装置、方法和系统
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US20130158378A1 (en) * 2011-09-22 2013-06-20 The Ohio State University Ionic barrier for floating gate in vivo biosensors
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US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
JP2008134255A (ja) * 2007-12-17 2008-06-12 Hitachi Ltd 生体分子検出装置及びそれを用いた生体分子検出方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024178391A (ja) * 2020-01-13 2024-12-24 ベックマン コールター， インコーポレイテッド 固体イオン選択電極
JP7809179B2 (ja) 2020-01-13 2026-01-30 ベックマン コールター， インコーポレイテッド 固体イオン選択電極
JP2023049992A (ja) * 2021-09-29 2023-04-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
JP7611795B2 (ja) 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス

Also Published As

Publication number Publication date
US10436743B2 (en) 2019-10-08
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
US20190017958A1 (en) 2019-01-17
US20200025710A1 (en) 2020-01-23
US10067085B2 (en) 2018-09-04
US11029278B2 (en) 2021-06-08
CA2938155A1 (en) 2015-08-20
CN106104265A (zh) 2016-11-09
ES2542927A2 (es) 2015-08-12
KR20160119096A (ko) 2016-10-12
EP3106865A1 (en) 2016-12-21
ES2542927R1 (es) 2015-09-09
MX2016010017A (es) 2016-10-07
EP3106865B1 (en) 2020-06-10
ES2818111T3 (es) 2021-04-09

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