CN106104265A - 基于差分测量的离子传感器和制造方法 - Google Patents

基于差分测量的离子传感器和制造方法 Download PDF

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Publication number
CN106104265A
CN106104265A CN201580007758.0A CN201580007758A CN106104265A CN 106104265 A CN106104265 A CN 106104265A CN 201580007758 A CN201580007758 A CN 201580007758A CN 106104265 A CN106104265 A CN 106104265A
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CN
China
Prior art keywords
ion
effect transistor
chip
differential measurement
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580007758.0A
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English (en)
Chinese (zh)
Inventor
A·巴尔迪科尔
C·多明格斯霍尔纳
C·希门尼斯霍尔克拉
C·费尔南德斯桑切斯
A·略韦拉阿丹
A·摩尔罗斯多明戈
A·卡达尔索布斯托
I·布尔达罗包蒂斯塔
F·维拉格拉斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
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Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Publication of CN106104265A publication Critical patent/CN106104265A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
CN201580007758.0A 2014-02-11 2015-01-29 基于差分测量的离子传感器和制造方法 Pending CN106104265A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ES201430180A ES2542927R1 (es) 2014-02-11 2014-02-11 Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ESP201430180 2014-02-11
PCT/ES2015/070063 WO2015121516A1 (es) 2014-02-11 2015-01-29 Sensor de iones basado en medida diferencial y método de fabricación

Publications (1)

Publication Number Publication Date
CN106104265A true CN106104265A (zh) 2016-11-09

Family

ID=52633296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580007758.0A Pending CN106104265A (zh) 2014-02-11 2015-01-29 基于差分测量的离子传感器和制造方法

Country Status (9)

Country Link
US (3) US10067085B2 (https=)
EP (1) EP3106865B1 (https=)
JP (1) JP2017505443A (https=)
KR (1) KR20160119096A (https=)
CN (1) CN106104265A (https=)
CA (1) CA2938155A1 (https=)
ES (2) ES2542927R1 (https=)
MX (1) MX2016010017A (https=)
WO (1) WO2015121516A1 (https=)

Cited By (3)

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CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法
CN109932398A (zh) * 2017-12-15 2019-06-25 株式会社堀场先进技术 电磁传感器
CN116124856A (zh) * 2017-05-15 2023-05-16 亚德诺半导体国际无限责任公司 集成离子传感设备和方法

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* Cited by examiner, † Cited by third party
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ES2542927R1 (es) * 2014-02-11 2015-09-09 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones basado en medida diferencial, método de fabricación y método de medida
ES2597129B1 (es) * 2015-07-13 2017-11-08 Consejo Superior De Investigaciones Científicas (Csic) Sensor de iones de medida diferencial
CA3088168A1 (en) 2017-11-07 2019-05-16 Lic Automation Limited System and method for analysis of a fluid
US20200316002A1 (en) * 2019-04-03 2020-10-08 Devicare SL Prevention of urinary tract device encrustation
CN114930166A (zh) * 2020-01-13 2022-08-19 贝克曼库尔特有限公司 固态离子选择性电极
JP7611795B2 (ja) * 2021-09-29 2025-01-10 ラピスセミコンダクタ株式会社 測定装置、測定方法、イオン感応半導体デバイス
SE545362C2 (en) * 2021-12-22 2023-07-18 Senseair Ab Capped semiconductor based sensor and method for its fabrication
CN119470598B (zh) * 2025-01-14 2025-04-22 南京大学 一种半导体场效应晶体管液体传感器及其制造方法

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US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
CN102998336A (zh) * 2011-09-16 2013-03-27 Nxp股份有限公司 Ph传感器及制造方法

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US5250168A (en) 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
JPH0580026A (ja) * 1991-09-24 1993-03-30 Fuji Electric Co Ltd 半導体イオンセンサ
TW533593B (en) * 2002-05-20 2003-05-21 Univ Nat Yunlin Sci & Tech Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof
GB2416210B (en) * 2004-07-13 2008-02-20 Christofer Toumazou Ion sensitive field effect transistors
JP4731544B2 (ja) * 2007-12-17 2011-07-27 株式会社日立製作所 生体分子検出装置及びそれを用いた生体分子検出方法
WO2009119319A1 (ja) * 2008-03-27 2009-10-01 株式会社堀場製作所 イオンセンサ
CN102170820A (zh) * 2008-08-05 2011-08-31 Ph值诊断公司 用于确定哺乳动物的生理状态的装置、方法和系统
US9518953B2 (en) * 2011-09-07 2016-12-13 Technion Research And Development Foundation Ltd. Ion sensitive detector
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JPS63128253A (ja) * 1986-11-19 1988-05-31 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 半導体化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
CN102998336A (zh) * 2011-09-16 2013-03-27 Nxp股份有限公司 Ph传感器及制造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116124856A (zh) * 2017-05-15 2023-05-16 亚德诺半导体国际无限责任公司 集成离子传感设备和方法
CN109932398A (zh) * 2017-12-15 2019-06-25 株式会社堀场先进技术 电磁传感器
CN108565262A (zh) * 2018-04-17 2018-09-21 重庆第二师范学院 一种用于生化分析的阵列式传感器集成芯片及其制备方法

Also Published As

Publication number Publication date
US10436743B2 (en) 2019-10-08
US20170010237A1 (en) 2017-01-12
WO2015121516A1 (es) 2015-08-20
JP2017505443A (ja) 2017-02-16
US20190017958A1 (en) 2019-01-17
US20200025710A1 (en) 2020-01-23
US10067085B2 (en) 2018-09-04
US11029278B2 (en) 2021-06-08
CA2938155A1 (en) 2015-08-20
ES2542927A2 (es) 2015-08-12
KR20160119096A (ko) 2016-10-12
EP3106865A1 (en) 2016-12-21
ES2542927R1 (es) 2015-09-09
MX2016010017A (es) 2016-10-07
EP3106865B1 (en) 2020-06-10
ES2818111T3 (es) 2021-04-09

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Application publication date: 20161109

RJ01 Rejection of invention patent application after publication