MX2016010017A - Sensor de iones basado en medida diferencial y metodo de fabricacion. - Google Patents
Sensor de iones basado en medida diferencial y metodo de fabricacion.Info
- Publication number
- MX2016010017A MX2016010017A MX2016010017A MX2016010017A MX2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A MX 2016010017 A MX2016010017 A MX 2016010017A
- Authority
- MX
- Mexico
- Prior art keywords
- microdeposit
- sensor based
- ion
- differential measurement
- manufacturing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Computer Hardware Design (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES201430180A ES2542927R1 (es) | 2014-02-11 | 2014-02-11 | Sensor de iones basado en medida diferencial, método de fabricación y método de medida |
| PCT/ES2015/070063 WO2015121516A1 (es) | 2014-02-11 | 2015-01-29 | Sensor de iones basado en medida diferencial y método de fabricación |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2016010017A true MX2016010017A (es) | 2016-10-07 |
Family
ID=52633296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2016010017A MX2016010017A (es) | 2014-02-11 | 2015-01-29 | Sensor de iones basado en medida diferencial y metodo de fabricacion. |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US10067085B2 (https=) |
| EP (1) | EP3106865B1 (https=) |
| JP (1) | JP2017505443A (https=) |
| KR (1) | KR20160119096A (https=) |
| CN (1) | CN106104265A (https=) |
| CA (1) | CA2938155A1 (https=) |
| ES (2) | ES2542927R1 (https=) |
| MX (1) | MX2016010017A (https=) |
| WO (1) | WO2015121516A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2542927R1 (es) * | 2014-02-11 | 2015-09-09 | Consejo Superior De Investigaciones Científicas (Csic) | Sensor de iones basado en medida diferencial, método de fabricación y método de medida |
| ES2597129B1 (es) * | 2015-07-13 | 2017-11-08 | Consejo Superior De Investigaciones Científicas (Csic) | Sensor de iones de medida diferencial |
| US12117415B2 (en) * | 2017-05-15 | 2024-10-15 | Analog Devices International Unlimited Company | Integrated ion sensing apparatus and methods |
| CA3088168A1 (en) | 2017-11-07 | 2019-05-16 | Lic Automation Limited | System and method for analysis of a fluid |
| JP7173731B2 (ja) * | 2017-12-15 | 2022-11-16 | 株式会社 堀場アドバンスドテクノ | 電磁気センサ |
| CN108565262A (zh) * | 2018-04-17 | 2018-09-21 | 重庆第二师范学院 | 一种用于生化分析的阵列式传感器集成芯片及其制备方法 |
| US20200316002A1 (en) * | 2019-04-03 | 2020-10-08 | Devicare SL | Prevention of urinary tract device encrustation |
| CN114930166A (zh) * | 2020-01-13 | 2022-08-19 | 贝克曼库尔特有限公司 | 固态离子选择性电极 |
| JP7611795B2 (ja) * | 2021-09-29 | 2025-01-10 | ラピスセミコンダクタ株式会社 | 測定装置、測定方法、イオン感応半導体デバイス |
| SE545362C2 (en) * | 2021-12-22 | 2023-07-18 | Senseair Ab | Capped semiconductor based sensor and method for its fabrication |
| CN119470598B (zh) * | 2025-01-14 | 2025-04-22 | 南京大学 | 一种半导体场效应晶体管液体传感器及其制造方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2096825A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemical sensitive semiconductor field effect transducer |
| EP0155725A1 (en) | 1984-02-27 | 1985-09-25 | Sentron v.o.f. | Ion concentration measurement system that employs measuring and reference field effect transistor electrodes sensitive to the same ion |
| JPS63128253A (ja) * | 1986-11-19 | 1988-05-31 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | 半導体化学センサ |
| US4874499A (en) * | 1988-05-23 | 1989-10-17 | Massachusetts Institute Of Technology | Electrochemical microsensors and method of making such sensors |
| US5250168A (en) | 1990-07-03 | 1993-10-05 | Hitachi, Ltd. | Integrated ion sensor |
| JPH0580026A (ja) * | 1991-09-24 | 1993-03-30 | Fuji Electric Co Ltd | 半導体イオンセンサ |
| TW533593B (en) * | 2002-05-20 | 2003-05-21 | Univ Nat Yunlin Sci & Tech | Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof |
| GB2416210B (en) * | 2004-07-13 | 2008-02-20 | Christofer Toumazou | Ion sensitive field effect transistors |
| JP4731544B2 (ja) * | 2007-12-17 | 2011-07-27 | 株式会社日立製作所 | 生体分子検出装置及びそれを用いた生体分子検出方法 |
| WO2009119319A1 (ja) * | 2008-03-27 | 2009-10-01 | 株式会社堀場製作所 | イオンセンサ |
| CN102170820A (zh) * | 2008-08-05 | 2011-08-31 | Ph值诊断公司 | 用于确定哺乳动物的生理状态的装置、方法和系统 |
| US9518953B2 (en) * | 2011-09-07 | 2016-12-13 | Technion Research And Development Foundation Ltd. | Ion sensitive detector |
| EP2570803B1 (en) * | 2011-09-16 | 2018-03-21 | Nxp B.V. | pH sensor and manufacturing method |
| US20130158378A1 (en) * | 2011-09-22 | 2013-06-20 | The Ohio State University | Ionic barrier for floating gate in vivo biosensors |
| US9304103B2 (en) * | 2011-09-30 | 2016-04-05 | Sentient Technologies, Inc. | Self-calibrating ion meter |
| US20130084214A1 (en) * | 2011-09-30 | 2013-04-04 | Frederick Quincy Johnson | Ion-Selective Ion Concentration Meter |
| US9689835B2 (en) * | 2011-10-31 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Amplified dual-gate bio field effect transistor |
| US9459234B2 (en) * | 2011-10-31 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”) | CMOS compatible BioFET |
| US8963216B2 (en) * | 2013-03-13 | 2015-02-24 | Life Technologies Corporation | Chemical sensor with sidewall spacer sensor surface |
| RU2649049C2 (ru) * | 2013-04-18 | 2018-03-29 | Соленис Текнолоджиз Кейман, Л.П. | Устройство и способ для обнаружения и анализа отложений |
| KR101540254B1 (ko) * | 2013-06-24 | 2015-07-30 | 경북대학교 산학협력단 | 당을 감지하는 화학감각수용체를 발현하는 세포를 이용한 바이오 센서 및 이를 포함하는 알츠하이머 진단 기기 |
| US9978689B2 (en) * | 2013-12-18 | 2018-05-22 | Nxp Usa, Inc. | Ion sensitive field effect transistors with protection diodes and methods of their fabrication |
| ES2542927R1 (es) * | 2014-02-11 | 2015-09-09 | Consejo Superior De Investigaciones Científicas (Csic) | Sensor de iones basado en medida diferencial, método de fabricación y método de medida |
| US9733210B2 (en) * | 2014-12-31 | 2017-08-15 | International Business Machines Corporation | Nanofluid sensor with real-time spatial sensing |
-
2014
- 2014-02-11 ES ES201430180A patent/ES2542927R1/es active Granted
-
2015
- 2015-01-29 US US15/113,381 patent/US10067085B2/en active Active
- 2015-01-29 MX MX2016010017A patent/MX2016010017A/es unknown
- 2015-01-29 JP JP2016550810A patent/JP2017505443A/ja active Pending
- 2015-01-29 CA CA2938155A patent/CA2938155A1/en not_active Abandoned
- 2015-01-29 KR KR1020167021498A patent/KR20160119096A/ko not_active Withdrawn
- 2015-01-29 ES ES15708848T patent/ES2818111T3/es active Active
- 2015-01-29 EP EP15708848.5A patent/EP3106865B1/en active Active
- 2015-01-29 CN CN201580007758.0A patent/CN106104265A/zh active Pending
- 2015-01-29 WO PCT/ES2015/070063 patent/WO2015121516A1/es not_active Ceased
-
2018
- 2018-06-28 US US16/021,926 patent/US10436743B2/en active Active
-
2019
- 2019-08-02 US US16/530,574 patent/US11029278B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10436743B2 (en) | 2019-10-08 |
| US20170010237A1 (en) | 2017-01-12 |
| WO2015121516A1 (es) | 2015-08-20 |
| JP2017505443A (ja) | 2017-02-16 |
| US20190017958A1 (en) | 2019-01-17 |
| US20200025710A1 (en) | 2020-01-23 |
| US10067085B2 (en) | 2018-09-04 |
| US11029278B2 (en) | 2021-06-08 |
| CA2938155A1 (en) | 2015-08-20 |
| CN106104265A (zh) | 2016-11-09 |
| ES2542927A2 (es) | 2015-08-12 |
| KR20160119096A (ko) | 2016-10-12 |
| EP3106865A1 (en) | 2016-12-21 |
| ES2542927R1 (es) | 2015-09-09 |
| EP3106865B1 (en) | 2020-06-10 |
| ES2818111T3 (es) | 2021-04-09 |
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