JP2017227892A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017227892A5 JP2017227892A5 JP2017116554A JP2017116554A JP2017227892A5 JP 2017227892 A5 JP2017227892 A5 JP 2017227892A5 JP 2017116554 A JP2017116554 A JP 2017116554A JP 2017116554 A JP2017116554 A JP 2017116554A JP 2017227892 A5 JP2017227892 A5 JP 2017227892A5
- Authority
- JP
- Japan
- Prior art keywords
- characteristic
- feature
- lut
- design layout
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 123
- 238000013461 design Methods 0.000 claims description 64
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 40
- 238000012545 processing Methods 0.000 claims description 38
- 230000004907 flux Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000001228 spectrum Methods 0.000 claims description 19
- 238000000206 photolithography Methods 0.000 claims description 10
- 238000000985 reflectance spectrum Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 238000005326 angular distribution function Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010801 machine learning Methods 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/188,910 | 2016-06-21 | ||
| US15/188,910 US10197908B2 (en) | 2016-06-21 | 2016-06-21 | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017227892A JP2017227892A (ja) | 2017-12-28 |
| JP2017227892A5 true JP2017227892A5 (cg-RX-API-DMAC7.html) | 2018-02-15 |
Family
ID=60660150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017116554A Pending JP2017227892A (ja) | 2016-06-21 | 2017-06-14 | 物理学ベースのエッチングプロファイルモデリングフレームワークを用いた高速エッジ配置誤差予測によるフォトレジスト設計レイアウトパターン近接効果補正 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10197908B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2017227892A (cg-RX-API-DMAC7.html) |
| KR (1) | KR102415463B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN107526864B (cg-RX-API-DMAC7.html) |
| SG (1) | SG10201705049VA (cg-RX-API-DMAC7.html) |
| TW (1) | TWI738796B (cg-RX-API-DMAC7.html) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102466464B1 (ko) * | 2015-08-03 | 2022-11-14 | 삼성전자주식회사 | 광 근접 보정을 위해 초기 바이어스 값을 제공하는 방법, 및 그 초기 바이어스 값에 기초한 광 근접 보정을 수반하는 마스크 제작 방법 |
| US10386828B2 (en) | 2015-12-17 | 2019-08-20 | Lam Research Corporation | Methods and apparatuses for etch profile matching by surface kinetic model optimization |
| US9792393B2 (en) | 2016-02-08 | 2017-10-17 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
| US10032681B2 (en) | 2016-03-02 | 2018-07-24 | Lam Research Corporation | Etch metric sensitivity for endpoint detection |
| US10197908B2 (en) | 2016-06-21 | 2019-02-05 | Lam Research Corporation | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
| US10254641B2 (en) | 2016-12-01 | 2019-04-09 | Lam Research Corporation | Layout pattern proximity correction through fast edge placement error prediction |
| CN109844637B (zh) | 2016-12-30 | 2022-09-09 | 谷歌有限责任公司 | 补偿电路元件中的沉积不均匀性 |
| US10269663B2 (en) * | 2017-01-06 | 2019-04-23 | Varian Semiconductor Equipment Associates, Inc. | Critical dimensions variance compensation |
| US10534257B2 (en) | 2017-05-01 | 2020-01-14 | Lam Research Corporation | Layout pattern proximity correction through edge placement error prediction |
| JP6942555B2 (ja) * | 2017-08-03 | 2021-09-29 | 東京エレクトロン株式会社 | 基板処理方法、コンピュータ記憶媒体及び基板処理システム |
| US11841391B1 (en) * | 2017-09-15 | 2023-12-12 | Eysight Technologies, Inc. | Signal generator utilizing a neural network |
| DE102018125109B4 (de) * | 2017-11-14 | 2022-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optische Nahbereichskorrektur |
| CN110137097B (zh) * | 2018-02-02 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 获得刻蚀深度极限值的方法 |
| US10692203B2 (en) | 2018-02-19 | 2020-06-23 | International Business Machines Corporation | Measuring defectivity by equipping model-less scatterometry with cognitive machine learning |
| US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
| US11624981B2 (en) * | 2018-04-10 | 2023-04-11 | Lam Research Corporation | Resist and etch modeling |
| CN111971551B (zh) | 2018-04-10 | 2025-02-28 | 朗姆研究公司 | 机器学习中的光学计量以表征特征 |
| CN110416111B (zh) * | 2018-04-28 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 实现多个腔室匹配的方法和实现多个腔室匹配的装置 |
| KR102611430B1 (ko) * | 2018-06-22 | 2023-12-08 | 삼성전자주식회사 | 반도체 설계 시뮬레이션을 위한 명령들을 포함하는 저장 매체, 반도체 설계 시스템, 그리고 반도체 설계 시뮬레이션의 방법 |
| DE102018211099B4 (de) * | 2018-07-05 | 2020-06-18 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Bewerten eines statistisch verteilten Messwertes beim Untersuchen eines Elements eines Photolithographieprozesses |
| KR102803747B1 (ko) * | 2018-07-26 | 2025-05-09 | 에이에스엠엘 네델란즈 비.브이. | 시뮬레이션 시스템을 위한 웨이퍼 층의 에칭 프로파일을 결정하는 방법 |
| CN110931377B (zh) * | 2018-09-20 | 2023-11-03 | 台湾积体电路制造股份有限公司 | 反射率测量系统与方法 |
| US10705514B2 (en) | 2018-10-09 | 2020-07-07 | Applied Materials, Inc. | Adaptive chamber matching in advanced semiconductor process control |
| US10930531B2 (en) | 2018-10-09 | 2021-02-23 | Applied Materials, Inc. | Adaptive control of wafer-to-wafer variability in device performance in advanced semiconductor processes |
| US10657214B2 (en) * | 2018-10-09 | 2020-05-19 | Applied Materials, Inc. | Predictive spatial digital design of experiment for advanced semiconductor process optimization and control |
| KR102563023B1 (ko) * | 2018-11-12 | 2023-08-03 | 주식회사 히타치하이테크 | 결함의 발생을 추정하는 시스템, 및 컴퓨터 가독 매체 |
| US10977405B2 (en) * | 2019-01-29 | 2021-04-13 | Lam Research Corporation | Fill process optimization using feature scale modeling |
| TWI776015B (zh) | 2019-01-30 | 2022-09-01 | 晶喬科技股份有限公司 | 半導體元件的製程開發方法以及系統 |
| CN113614638B (zh) * | 2019-03-21 | 2025-04-01 | Asml荷兰有限公司 | 用于机器学习辅助的光学邻近效应误差校正的训练方法 |
| CN113892059B (zh) | 2019-03-25 | 2025-05-06 | Asml荷兰有限公司 | 用于确定图案化过程中的图案的方法 |
| US11669019B2 (en) | 2019-05-21 | 2023-06-06 | Asml Netherlands B.V. | Method for determining stochastic variation associated with desired pattern |
| CN114008533B (zh) | 2019-06-20 | 2025-01-03 | Asml荷兰有限公司 | 用于图案化过程建模的方法 |
| CN114008535B (zh) * | 2019-07-04 | 2024-04-12 | Asml荷兰有限公司 | 用于确定特征对性能的贡献的方法和设备 |
| JP7334324B2 (ja) * | 2019-07-30 | 2023-08-28 | エーエスエムエル ネザーランズ ビー．ブイ． | マーク測定シーケンスの判定方法、ステージ装置、及びリソグラフィ装置 |
| US11966203B2 (en) * | 2019-08-21 | 2024-04-23 | Kla Corporation | System and method to adjust a kinetics model of surface reactions during plasma processing |
| US12293279B2 (en) * | 2019-08-29 | 2025-05-06 | Synopsys, Inc. | Neural network based mask synthesis for integrated circuits |
| KR20220038167A (ko) * | 2019-08-30 | 2022-03-25 | 에이에스엠엘 네델란즈 비.브이. | 반도체 디바이스 지오메트리 방법 및 시스템 |
| US11106855B2 (en) | 2019-09-17 | 2021-08-31 | Taiwan Semiconductor Manufacturing Company Limited | Pre-characterization mixed-signal design, placement, and routing using machine learning |
| US20220375063A1 (en) * | 2019-09-20 | 2022-11-24 | Asml Netherlands B.V. | System and method for generating predictive images for wafer inspection using machine learning |
| US12197133B2 (en) * | 2019-10-08 | 2025-01-14 | International Business Machines Corporation | Tool control using multistage LSTM for predicting on-wafer measurements |
| KR20210064445A (ko) | 2019-11-25 | 2021-06-03 | 삼성전자주식회사 | 반도체 공정 시뮬레이션 시스템 및 그것의 시뮬레이션 방법 |
| CN111308857B (zh) * | 2020-02-25 | 2023-08-11 | 上海华力集成电路制造有限公司 | 一种转角opc检查方法 |
| KR102416787B1 (ko) * | 2020-03-25 | 2022-07-05 | 한국핵융합에너지연구원 | 플라즈마 시뮬레이션을 위한 데이터의 입력 장치 및 방법 |
| KR102787674B1 (ko) | 2020-04-28 | 2025-03-28 | 삼성전자주식회사 | 반도체 장치의 제조를 위한 방법 및 컴퓨팅 장치 |
| WO2021254709A1 (en) * | 2020-06-16 | 2021-12-23 | Asml Netherlands B.V. | A method for modeling measurement data over a substrate area and associated apparatuses |
| KR102861371B1 (ko) | 2020-06-29 | 2025-09-18 | 삼성전자주식회사 | 반도체 공정의 근접 보정 방법 |
| US11194951B1 (en) * | 2020-08-31 | 2021-12-07 | Siemens Industry Software Inc. | Optical proximity correction model verification |
| KR102877376B1 (ko) * | 2020-12-02 | 2025-10-28 | 삼성전자주식회사 | 기계 학습을 이용한 반도체 공정을 위한 레이아웃의 보정 방법 및 장치 |
| CN112485976B (zh) * | 2020-12-11 | 2022-11-01 | 上海集成电路装备材料产业创新中心有限公司 | 基于逆向刻蚀模型确定光学临近修正光刻目标图案的方法 |
| KR102763937B1 (ko) | 2020-12-29 | 2025-02-05 | 삼성전자주식회사 | 엣칭 모델링 시스템 및 상기 시스템을 이용한 반도체 장치 제조 방법 |
| US20220245307A1 (en) * | 2021-02-03 | 2022-08-04 | Applied Materials, Inc. | Hybrid physics/machine learning modeling of processes |
| KR20230016112A (ko) | 2021-07-23 | 2023-02-01 | 삼성전자주식회사 | 반도체 장치의 제조를 위한 전자 장치 및 전자 장치의 동작 방법 |
| US20230092729A1 (en) * | 2021-09-20 | 2023-03-23 | Kla Corporation | Semiconductor Profile Measurement Based On A Scanning Conditional Model |
| US20230222264A1 (en) * | 2022-01-07 | 2023-07-13 | Applied Materials, Inc. | Processing chamber calibration |
| CN114898169B (zh) * | 2022-03-10 | 2024-04-12 | 武汉大学 | 一种基于深度学习的光刻opc数据库建立方法 |
| US12480212B2 (en) | 2022-03-30 | 2025-11-25 | Applied Materials, Inc. | Chemical-dose substrate deposition monitoring |
| US12333700B2 (en) | 2022-03-30 | 2025-06-17 | Applied Materials, Inc. | Chemical-dose substrate deposition monitoring |
| US20230316044A1 (en) * | 2022-04-05 | 2023-10-05 | Nxp B.V. | Method for block-level nn deployment metric modelling |
| US20230402283A1 (en) * | 2022-06-09 | 2023-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating mask |
| CN115408650B (zh) * | 2022-08-03 | 2023-04-28 | 武汉宇微光学软件有限公司 | 光刻胶多级串连表征网络的建模、校准、仿真方法和系统 |
| CN119422105A (zh) * | 2022-08-25 | 2025-02-11 | Asml荷兰有限公司 | 多层级蚀刻过程的建模 |
| KR20240061130A (ko) * | 2022-10-31 | 2024-05-08 | 삼성전자주식회사 | 기계 학습을 이용한 반도체 공정을 위한 레이아웃 보정 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| TW202509802A (zh) * | 2023-03-30 | 2025-03-01 | 日商東京威力科創股份有限公司 | 電腦程式、資訊處理方法及資訊處理裝置 |
| WO2025038935A1 (en) * | 2023-08-17 | 2025-02-20 | Reality Designer, Inc. | Multi-dimensional model generation for aesthetic design of an environment |
Family Cites Families (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5114233A (en) | 1990-10-09 | 1992-05-19 | At&T Bell Laboratories | Method for inspecting etched workpieces |
| US5421934A (en) | 1993-03-26 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Dry-etching process simulator |
| US6151532A (en) * | 1998-03-03 | 2000-11-21 | Lam Research Corporation | Method and apparatus for predicting plasma-process surface profiles |
| US6268226B1 (en) | 1999-06-30 | 2001-07-31 | International Business Machines Corporation | Reactive ion etch loading measurement technique |
| EP1252652A1 (de) | 2000-01-25 | 2002-10-30 | Infineon Technologies AG | Verfahren zur überwachung eines herstellungsprozesses |
| US6410351B1 (en) | 2000-07-13 | 2002-06-25 | Advanced Micro Devices, Inc. | Method and apparatus for modeling thickness profiles and controlling subsequent etch process |
| US20030113766A1 (en) | 2000-10-30 | 2003-06-19 | Sru Biosystems, Llc | Amine activated colorimetric resonant biosensor |
| US6951823B2 (en) | 2001-05-14 | 2005-10-04 | Axcelis Technologies, Inc. | Plasma ashing process |
| US6650423B1 (en) | 2001-07-02 | 2003-11-18 | Advanced Micro Devices Inc. | Method and apparatus for determining column dimensions using scatterometry |
| US6684382B2 (en) | 2001-08-31 | 2004-01-27 | Numerical Technologies, Inc. | Microloading effect correction |
| US6903826B2 (en) | 2001-09-06 | 2005-06-07 | Hitachi, Ltd. | Method and apparatus for determining endpoint of semiconductor element fabricating process |
| US6753115B2 (en) | 2001-12-20 | 2004-06-22 | Numerical Technologies, Inc. | Facilitating minimum spacing and/or width control optical proximity correction |
| US7363099B2 (en) | 2002-06-07 | 2008-04-22 | Cadence Design Systems, Inc. | Integrated circuit metrology |
| US6973633B2 (en) | 2002-07-24 | 2005-12-06 | George Lippincott | Caching of lithography and etch simulation results |
| US7402257B1 (en) | 2002-07-30 | 2008-07-22 | Advanced Micro Devices, Inc. | Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same |
| US7504182B2 (en) | 2002-09-18 | 2009-03-17 | Fei Company | Photolithography mask repair |
| US20050074907A1 (en) | 2003-10-06 | 2005-04-07 | Adrian Kriz | Semi-conductor wafer fabrication |
| US7523076B2 (en) | 2004-03-01 | 2009-04-21 | Tokyo Electron Limited | Selecting a profile model for use in optical metrology using a machine learning system |
| JP5112624B2 (ja) * | 2004-09-01 | 2013-01-09 | ラム リサーチ コーポレーション | プロセスチャンバ及びプラズマチャンバを操作する方法 |
| US7171284B2 (en) | 2004-09-21 | 2007-01-30 | Timbre Technologies, Inc. | Optical metrology model optimization based on goals |
| US7739651B2 (en) | 2004-09-29 | 2010-06-15 | Synopsys, Inc. | Method and apparatus to determine if a pattern is robustly manufacturable |
| US7253008B2 (en) | 2004-12-28 | 2007-08-07 | Sandia Corporation | Reactive ion etched substrates and methods of making and using |
| US7442649B2 (en) * | 2005-03-29 | 2008-10-28 | Lam Research Corporation | Etch with photoresist mask |
| US7539969B2 (en) * | 2005-05-10 | 2009-05-26 | Lam Research Corporation | Computer readable mask shrink control processor |
| US7588946B2 (en) | 2005-07-25 | 2009-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling system for gate formation of semiconductor devices |
| EP1920369A2 (en) | 2005-08-08 | 2008-05-14 | Brion Technologies, Inc. | System and method for creating a focus-exposure model of a lithography process |
| US7695876B2 (en) | 2005-08-31 | 2010-04-13 | Brion Technologies, Inc. | Method for identifying and using process window signature patterns for lithography process control |
| CN1940715A (zh) * | 2005-09-27 | 2007-04-04 | 力晶半导体股份有限公司 | 光掩模图案的校正方法及其形成方法 |
| US7600212B2 (en) | 2005-10-03 | 2009-10-06 | Cadence Design Systems, Inc. | Method of compensating photomask data for the effects of etch and lithography processes |
| US7694267B1 (en) | 2006-02-03 | 2010-04-06 | Brion Technologies, Inc. | Method for process window optimized optical proximity correction |
| US20070249071A1 (en) | 2006-04-21 | 2007-10-25 | Lei Lian | Neural Network Methods and Apparatuses for Monitoring Substrate Processing |
| JP4914119B2 (ja) | 2006-05-31 | 2012-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
| US7525673B2 (en) | 2006-07-10 | 2009-04-28 | Tokyo Electron Limited | Optimizing selected variables of an optical metrology system |
| US7849423B1 (en) | 2006-07-21 | 2010-12-07 | Cadence Design Systems, Inc. | Method of verifying photomask data based on models of etch and lithography processes |
| GB0616131D0 (en) * | 2006-08-14 | 2006-09-20 | Oxford Instr Plasma Technology | Surface processing apparatus |
| EP2062346A1 (de) * | 2006-09-15 | 2009-05-27 | ABB Schweiz AG | Verfahren zum betrieb einer umrichterschaltung sowie vorrichtung zur durchführung des verfahrens |
| US7949618B2 (en) | 2007-03-28 | 2011-05-24 | Tokyo Electron Limited | Training a machine learning system to determine photoresist parameters |
| US8001512B1 (en) | 2007-06-26 | 2011-08-16 | Cadence Design Systems, Inc. | Method and system for implementing context simulation |
| JP5036450B2 (ja) | 2007-08-16 | 2012-09-26 | 株式会社東芝 | シミュレーション方法およびシミュレーションプログラム |
| US7812966B2 (en) | 2007-08-30 | 2010-10-12 | Infineon Technologies Ag | Method of determining the depth profile of a surface structure and system for determining the depth profile of a surface structure |
| KR101374932B1 (ko) | 2007-09-28 | 2014-03-17 | 재단법인서울대학교산학협력재단 | 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조 |
| EP2223245B1 (en) | 2007-11-30 | 2011-07-20 | Coventor, Inc. | System and method for three-dimensional schematic capture and result visualization of multi-physics system models |
| JP5026326B2 (ja) | 2008-04-04 | 2012-09-12 | 株式会社日立ハイテクノロジーズ | エッチング処理状態の判定方法、システム |
| US8649016B2 (en) | 2009-06-23 | 2014-02-11 | Rudolph Technologies, Inc. | System for directly measuring the depth of a high aspect ratio etched feature on a wafer |
| US8279409B1 (en) | 2009-08-05 | 2012-10-02 | Cadence Design Systems, Inc. | System and method for calibrating a lithography model |
| KR101930913B1 (ko) | 2010-06-17 | 2018-12-19 | 노바 메주어링 인스트루먼츠 엘티디. | 패턴 구조들의 광학적 정밀 검사를 최적화하는 방법 및 시스템 |
| US8494314B2 (en) | 2010-07-05 | 2013-07-23 | Infinera Corporation | Fabrication tolerant polarization converter |
| US8666703B2 (en) | 2010-07-22 | 2014-03-04 | Tokyo Electron Limited | Method for automated determination of an optimally parameterized scatterometry model |
| US8577820B2 (en) | 2011-03-04 | 2013-11-05 | Tokyo Electron Limited | Accurate and fast neural network training for library-based critical dimension (CD) metrology |
| US20120280354A1 (en) | 2011-05-05 | 2012-11-08 | Synopsys, Inc. | Methods for fabricating high-density integrated circuit devices |
| NL2009982A (en) * | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
| CN104736744B (zh) | 2012-10-17 | 2017-06-06 | 东京毅力科创株式会社 | 使用多变量分析的等离子体蚀刻终点检测 |
| JP5974840B2 (ja) * | 2012-11-07 | 2016-08-23 | ソニー株式会社 | シミュレーション方法、シミュレーションプログラム、シミュレータ、加工装置、半導体装置の製造方法 |
| TWI512389B (zh) * | 2013-02-22 | 2015-12-11 | Globalfoundries Us Inc | 定向自組裝製程／鄰近校正之方法 |
| TWI621957B (zh) | 2013-03-14 | 2018-04-21 | 新納普系統股份有限公司 | 使用點擊最佳化的次解析度輔助特徵實現方式 |
| US9230819B2 (en) * | 2013-04-05 | 2016-01-05 | Lam Research Corporation | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing |
| US9412673B2 (en) | 2013-08-23 | 2016-08-09 | Kla-Tencor Corporation | Multi-model metrology |
| US9274417B2 (en) | 2013-09-18 | 2016-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for lithography patterning |
| TWI668725B (zh) | 2013-10-01 | 2019-08-11 | 美商蘭姆研究公司 | 使用模型化、回授及阻抗匹配之蝕刻速率的控制 |
| US10895810B2 (en) | 2013-11-15 | 2021-01-19 | Kla Corporation | Automatic selection of sample values for optical metrology |
| JP6177671B2 (ja) * | 2013-11-25 | 2017-08-09 | ソニーセミコンダクタソリューションズ株式会社 | シミュレーション方法、シミュレーションプログラムおよびシミュレータ |
| JP6318007B2 (ja) | 2013-11-29 | 2018-04-25 | 株式会社日立ハイテクノロジーズ | データ処理方法、データ処理装置および処理装置 |
| WO2015090774A1 (en) | 2013-12-17 | 2015-06-25 | Asml Netherlands B.V. | Yield estimation and control |
| US9659126B2 (en) | 2014-01-26 | 2017-05-23 | Coventor, Inc. | Modeling pattern dependent effects for a 3-D virtual semiconductor fabrication environment |
| CN105225979A (zh) | 2014-06-19 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件制程预测系统和方法 |
| WO2015197313A1 (en) * | 2014-06-25 | 2015-12-30 | Asml Netherlands B.V. | Etch variation tolerant optimization |
| CN106537556B (zh) * | 2014-08-19 | 2021-09-07 | 英特尔公司 | 利用电子束通用切具的交叉扫描接近度校正 |
| CN104820787A (zh) * | 2015-05-13 | 2015-08-05 | 西安电子科技大学 | 基于fpga芯片的电路系统功耗预测方法 |
| KR20170047101A (ko) | 2015-10-22 | 2017-05-04 | 삼성전자주식회사 | Opc 이용한 마스크 제조방법 및 반도체 소자 제조방법 |
| US10599789B2 (en) * | 2015-11-25 | 2020-03-24 | Synopsys, Inc. | Topography simulation of etching and/or deposition on a physical structure |
| US10386828B2 (en) | 2015-12-17 | 2019-08-20 | Lam Research Corporation | Methods and apparatuses for etch profile matching by surface kinetic model optimization |
| CN105516022B (zh) * | 2016-01-27 | 2018-10-09 | 盛科网络（苏州）有限公司 | 在芯片中实现802.11 QoS优先级值灵活映射的方法 |
| US9792393B2 (en) * | 2016-02-08 | 2017-10-17 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
| US10032681B2 (en) * | 2016-03-02 | 2018-07-24 | Lam Research Corporation | Etch metric sensitivity for endpoint detection |
| US10346740B2 (en) | 2016-06-01 | 2019-07-09 | Kla-Tencor Corp. | Systems and methods incorporating a neural network and a forward physical model for semiconductor applications |
| US10197908B2 (en) | 2016-06-21 | 2019-02-05 | Lam Research Corporation | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
| US10254641B2 (en) | 2016-12-01 | 2019-04-09 | Lam Research Corporation | Layout pattern proximity correction through fast edge placement error prediction |
| US10262910B2 (en) | 2016-12-23 | 2019-04-16 | Lam Research Corporation | Method of feature exaction from time-series of spectra to control endpoint of process |
| US20180239851A1 (en) | 2017-02-21 | 2018-08-23 | Asml Netherlands B.V. | Apparatus and method for inferring parameters of a model of a measurement structure for a patterning process |
| US10534257B2 (en) | 2017-05-01 | 2020-01-14 | Lam Research Corporation | Layout pattern proximity correction through edge placement error prediction |
| US20190049937A1 (en) | 2017-08-09 | 2019-02-14 | Lam Research Corporation | Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization |
-
2016
- 2016-06-21 US US15/188,910 patent/US10197908B2/en active Active
-
2017
- 2017-06-14 JP JP2017116554A patent/JP2017227892A/ja active Pending
- 2017-06-19 SG SG10201705049VA patent/SG10201705049VA/en unknown
- 2017-06-19 KR KR1020170077116A patent/KR102415463B1/ko active Active
- 2017-06-19 TW TW106120279A patent/TWI738796B/zh active
- 2017-06-21 CN CN201710475240.0A patent/CN107526864B/zh active Active
- 2017-06-21 CN CN202110532314.6A patent/CN113420523A/zh active Pending
-
2018
- 2018-12-18 US US16/224,651 patent/US10585347B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017227892A5 (cg-RX-API-DMAC7.html) | ||
| JP7182565B2 (ja) | エッジ配置誤差予測を用いた設計レイアウトパターン近接効果補正 | |
| US8117001B2 (en) | Measurement system for correcting overlay measurement error | |
| US10998174B2 (en) | Dry etching equipment and method for producing semiconductor device | |
| US6907364B2 (en) | Methods and apparatus for deriving thermal flux data for processing a workpiece | |
| JP2017227892A (ja) | 物理学ベースのエッチングプロファイルモデリングフレームワークを用いた高速エッジ配置誤差予測によるフォトレジスト設計レイアウトパターン近接効果補正 | |
| US10409946B2 (en) | Process artefact compensation upon transfer of a mask layout onto a mask substrate | |
| US12020914B2 (en) | Optimizing plasma resources for targeted film | |
| CN104736962A (zh) | 用于估计及校正偏移目标不准确度的方法 | |
| TW201033844A (en) | Advanced process control method and system | |
| JP5175696B2 (ja) | 現像方法、及びフォトマスクの製造方法 | |
| US11378891B2 (en) | Method for determining contribution to a fingerprint | |
| TW201520803A (zh) | 模擬方法，模擬程式，製程控制系統，模擬器，製程設計方法及光罩設計方法 | |
| TW201033769A (en) | Method and apparatus for advanced process control | |
| Lee et al. | Prediction of wafer state after plasma processing using real-time tool data | |
| US9224661B2 (en) | Film thickness metrology | |
| CN108873611A (zh) | 光刻装置和制造物品的方法 | |
| US6808942B1 (en) | Method for controlling a critical dimension (CD) in an etch process | |
| US7228522B2 (en) | Edge-based proximity correction | |
| Chue et al. | Optimization of alignment/overlay sampling and marker layout to improve overlay performance for double patterning technology | |
| CN115380367A (zh) | 用于校正晶片倾斜对偏移测量的影响的系统及方法 | |
| TW202136899A (zh) | 基於計量景觀之用於計量優化之系統及方法 | |
| Groeger et al. | Advanced CD uniformity correction using radial basis function (RBF) models | |
| KR20140123786A (ko) | 정합 마크 선택 장치 및 이를 이용한 기판 가공 시스템 |