JP2017201691A - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP2017201691A JP2017201691A JP2017091808A JP2017091808A JP2017201691A JP 2017201691 A JP2017201691 A JP 2017201691A JP 2017091808 A JP2017091808 A JP 2017091808A JP 2017091808 A JP2017091808 A JP 2017091808A JP 2017201691 A JP2017201691 A JP 2017201691A
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- 239000004065 semiconductor Substances 0.000 claims description 218
- 239000000758 substrate Substances 0.000 claims description 177
- 239000010410 layer Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 35
- 238000000926 separation method Methods 0.000 claims description 22
- 239000012790 adhesive layer Substances 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 description 24
- 230000001070 adhesive effect Effects 0.000 description 24
- 239000012535 impurity Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 238000010030 laminating Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 239000000945 filler Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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Abstract
【解決手段】太陽電池モジュールは、複数の太陽電池(C1、C2)を備え、複数の太陽電池(C1、C2)を電気的に接続するインターコネクタによりセルストリングを構成し、複数のセルストリング(ST1、ST2)を電気的に接続させるバスバー310を備えており、インターコネクタとバスバー310を視覚的に遮断するために、第1シールド400aと第2シールド400bを備える。
【選択図】図2
Description
もまたバスバーにより互に接続されるが、このようなバスバーもまたモジュールの外部から見られて、太陽電池モジュールの外観をすっきりと秀麗に見えないようにする問題点があった。
(epoxy solder paste)または導電性ペースト(Conductive psate)の形態で形成することができる。
図15a、図15b及び図16に示すように、第1シールド400aが第1、第2太陽電池(C1、C2)の間に位置するインターコネクタ300の前面に位置するが、1つで形成された場合、1つの第1シールド400aが第1太陽電池の半導体基板110の前面端及び第2太陽電池の半導体基板110の前面端に全て重畳されて粘着することができる。
Claims (20)
- 半導体基板と、
前記半導体基板の第1表面に第1導電型電極と第2導電型電極を備える複数の太陽電池が電気的に接続される複数のセルストリングと、
前記複数のセルストリングに含まれた前記複数の太陽電池の内、互いに第1方向に隣接する2つの第1、第2太陽電池を直列接続させるために、前記第1太陽電池の第1導電型電極と前記第2太陽電池の第2導電型電極を電気的に接続するインターコネクタと、
前記第1、第2太陽電池の間に、前記インターコネクタの前面の上に位置し、前記第1方向と交差する第2方向に長く伸びている第1シールド(Shield)とを含み、
前記第1シールドは、前記第1、第2太陽電池との間の領域の内で前記半導体基板の面取り領域(chamfered area)の間に位置する第1部分の幅が前記第1部分より内側に位置する中央部分の幅よりさらに広い、太陽電池モジュール。 - 前記第1シールドの受光面である前面には、複数の凹凸または光反射粒子または金属材質を含む光反射層が形成される、請求項1に記載の太陽電池モジュール。
- 前記第1シールドは、前記第1、第2太陽電池それぞれの前記半導体基板と重畳されず離隔される、請求項1に記載の太陽電池モジュール。
- 前記第1シールドの前記第1部分の幅は、前記第1シールドの両端に行くほど増加する、請求項1に記載の太陽電池モジュール。
- 前記第1シールドが前記第1、第2太陽電池のそれぞれに備えられた前記半導体基板のそれぞれと離隔される最小離隔間隔の合計は、0.6mm〜1.4mmである、請求項3に記載の太陽電池モジュール。
- 前記第1シールドは、絶縁性材質の基材と、前記インターコネクタと向き合う前記基材の後面に位置し、前記インターコネクタに粘着する粘着層(cohesion layer)を含む、請求項1に記載の太陽電池モジュール。
- 前記基材は、PET(polyethylene terephthalate)を含み、
前記粘着層は、エポキシ(Epoxy)系、アクリル(Acryl)系またはシリコン(silicone)系の内、少なくとも1つの材質を含む、請求項6に記載の太陽電池モジュール。 - 前記第1シールドの受光面の色は、前記太陽電池の後面に位置する後面シートの色と同じか同じ系列である、請求項1に記載の太陽電池モジュール。
- 前記第1シールドから前記第1方向への両端は、前記インターコネクタの方向に曲げられた、請求項3に記載の太陽電池モジュール。
- 前記太陽電池モジュールは、
前記複数の太陽電池のそれぞれに備えられた前記第1導電型電極に接続される第1導電性配線と前記第2導電型電極に接続される第2導電性配線をさらに含み、
前記インターコネクタには、前記第1太陽電池に接続された前記第1導電性配線と前記第2太陽電池に接続された第2導電性配線が共通に接続される、請求項1に記載の太陽電池モジュール。 - 前記第1シールドは、前記第1、第2太陽電池の間に露出される前記第1、第2導電性配線の上に重畳して位置する、請求項1に記載の太陽電池モジュール。
- 前記第1シールドは、前記第1、第2太陽電池に備えられた各半導体基板の内、少なくとも1つの半導体基板の前面端(edge area)に重畳されて粘着される、請求項1に記載の太陽電池モジュール。
- 前記第1シールドは、前記第1太陽電池の半導体基板の前面端及び前記第2太陽電池の半導体基板の前面端に重畳される、請求項12に記載の太陽電池モジュール。
- 前記インターコネクタは、前記第1シールドに完全に重畳される、請求項1に記載の太陽電池モジュール。
- 前記複数のセルストリングの内、互いに隣接する第1、第2セルストリングのそれぞれの最後の太陽電池に接続され、前記第1、第2セルストリングを、前記第2方向に接続するバスバーと、
前記バスバーの前面上に前記第2方向に長く位置し、前記バスバーを視覚的に遮断する第2シールドとをさらに含む、請求項1に記載の太陽電池モジュール。 - 前記第2シールドの前記第2方向の両端の線幅は、前記第2シールドの中央線幅より大きく形成され、
前記第2シールドは、前記第2方向の中心線に対して非対称である、請求項15に記載の太陽電池モジュール。 - 前記第2シールドにおいて、前記第1、第2セルストリングの最後の太陽電池に隣接する内側部分は、前記最後の太陽電池の角の部分において、前記最後の太陽電池の方向に突出し、
前記第2シールドにおいて、前記内側部分の反対側に位置する外側部分は、直線に形成される、請求項15に記載の太陽電池モジュール。 - 前記第2シールドの内側部分で突出した部分は、前記第1方向に突出する、請求項17に記載の太陽電池モジュール。
- 前記第2シールドの内側部分は、前記最後の太陽電池の半導体基板と離隔されるか、前記最後の太陽電池の半導体基板の前面端と重畳される、請求項17に記載の太陽電池モジュール。
- 前記第2シールドは、前記第1、第2セルストリングの間に位置する延長部をさらに含む、請求項17に記載の太陽電池モジュール。
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