JP2017163143A5 - - Google Patents
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- Publication number
- JP2017163143A5 JP2017163143A5 JP2017044944A JP2017044944A JP2017163143A5 JP 2017163143 A5 JP2017163143 A5 JP 2017163143A5 JP 2017044944 A JP2017044944 A JP 2017044944A JP 2017044944 A JP2017044944 A JP 2017044944A JP 2017163143 A5 JP2017163143 A5 JP 2017163143A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor
- hydrogen peroxide
- carbon
- peroxide vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 40
- 239000000758 substrate Substances 0.000 claims 31
- 238000000034 method Methods 0.000 claims 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 12
- 229910052799 carbon Inorganic materials 0.000 claims 12
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 claims 12
- 239000000463 material Substances 0.000 claims 11
- 238000004806 packaging method and process Methods 0.000 claims 6
- 230000005855 radiation Effects 0.000 claims 6
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- 150000001336 alkenes Chemical class 0.000 claims 2
- 150000001451 organic peroxides Chemical class 0.000 claims 2
- 238000010025 steaming Methods 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 230000005494 condensation Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662305715P | 2016-03-09 | 2016-03-09 | |
| US62/305,715 | 2016-03-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017163143A JP2017163143A (ja) | 2017-09-14 |
| JP2017163143A5 true JP2017163143A5 (enExample) | 2020-04-09 |
| JP6948808B2 JP6948808B2 (ja) | 2021-10-13 |
Family
ID=59786966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017044944A Active JP6948808B2 (ja) | 2016-03-09 | 2017-03-09 | 基板の蒸気相ヒドロキシルラジカル処理のためのシステム及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10490399B2 (enExample) |
| JP (1) | JP6948808B2 (enExample) |
| KR (1) | KR102362672B1 (enExample) |
| CN (1) | CN107180774B (enExample) |
| TW (1) | TWI774662B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AR110739A1 (es) | 2017-01-09 | 2019-05-02 | Synexis Llc | Aplicación de gas seco de peróxido de hidrógeno (dhp) a métodos para la producción de aves de corral |
| KR102111835B1 (ko) * | 2017-11-20 | 2020-05-15 | 한국과학기술원 | 서브 챔버를 구비한 iCVD 시스템 및 방법 |
| CN108380569A (zh) * | 2018-03-02 | 2018-08-10 | 常州瑞择微电子科技有限公司 | 高浓度oh自由基发生装置 |
| KR102691174B1 (ko) * | 2019-01-28 | 2024-08-05 | 도쿄엘렉트론가부시키가이샤 | 루테늄의 선택적 제거를 위한 광 보조 화학 기상 에칭 |
| CN110797245B (zh) * | 2019-10-28 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| JP7671779B2 (ja) | 2020-04-14 | 2025-05-02 | ラシルク，インコーポレイテッド | 水素劣化の抑制 |
| KR102520916B1 (ko) * | 2020-12-16 | 2023-04-11 | 동명대학교산학협력단 | 반도체 공정의 화학기계적 연마(cmp)를 위한 히드록시 라디칼과 용존산소량 제어를 통한 고능률 하이브리드 연마 시스템 |
| KR102489838B1 (ko) * | 2020-12-16 | 2023-01-17 | 동명대학교산학협력단 | 반도체 공정의 화학기계적 연마(CMP)를 위한 연마 입자 분산성 향상을 통한 시너지 효과 극대화와 SiC 및 GaN 기판 가공 방법 및 시스템 |
| WO2024074929A1 (en) * | 2022-10-03 | 2024-04-11 | Rasirc, Inc. | Hydrogen peroxide plasma etch of ashable hard mask |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1212953A (en) * | 1982-05-01 | 1986-10-21 | Ian M. Campbell | Nitration of organic compounds and organic nitrogen compounds produced |
| ATE110797T1 (de) * | 1989-12-20 | 1994-09-15 | Hughes Aircraft Co | Peroxidzusammensetzung zum entfernen von zunder und verfahren zu deren verwendung. |
| US5269850A (en) * | 1989-12-20 | 1993-12-14 | Hughes Aircraft Company | Method of removing organic flux using peroxide composition |
| JP3034720B2 (ja) * | 1993-03-31 | 2000-04-17 | ウシオ電機株式会社 | 表面洗浄方法もしくは表面改質方法 |
| JP3075352B2 (ja) * | 1998-04-15 | 2000-08-14 | 日本電気株式会社 | 化学的機械研磨液の供給方法および装置 |
| JP3540180B2 (ja) | 1998-12-24 | 2004-07-07 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
| JP2002110611A (ja) * | 2000-10-04 | 2002-04-12 | Texas Instr Japan Ltd | 半導体ウェハの洗浄方法及び装置 |
| JP2002192089A (ja) * | 2000-12-25 | 2002-07-10 | Nomura Micro Sci Co Ltd | 洗浄方法 |
| JP2003077824A (ja) * | 2001-09-06 | 2003-03-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP4038557B2 (ja) * | 2002-04-16 | 2008-01-30 | リアライズ・アドバンストテクノロジ株式会社 | レジスト除去装置及びレジスト除去方法 |
| US6848455B1 (en) * | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| TWI238465B (en) * | 2002-07-24 | 2005-08-21 | Toshiba Corp | Method of forming pattern and substrate processing apparatus |
| JP2004073981A (ja) * | 2002-08-15 | 2004-03-11 | Tokyo Ohka Kogyo Co Ltd | 熱安定化装置の内部洗浄方法 |
| JP4034240B2 (ja) * | 2003-06-25 | 2008-01-16 | シャープ株式会社 | 剥離洗浄方法および剥離洗浄装置 |
| KR20070015260A (ko) * | 2005-07-30 | 2007-02-02 | 삼성전자주식회사 | 선형나노선재의 제조방법 및 이에 의한 선형나노선재그리고 선형나노선재를 이용한 박막트랜지스터 기판 |
| WO2007058287A1 (ja) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | 物質の改質方法及び改質装置 |
| US7527695B2 (en) * | 2006-06-21 | 2009-05-05 | Asahi Glass Company, Limited | Apparatus and method for cleaning substrate |
| JP4536711B2 (ja) * | 2006-12-25 | 2010-09-01 | 東京エレクトロン株式会社 | 基板処理装置 |
| KR20080109564A (ko) * | 2007-06-13 | 2008-12-17 | 주식회사 하이닉스반도체 | 포토마스크의 세정장치 및 이를 이용한 세정방법 |
| JP2010161350A (ja) * | 2008-12-09 | 2010-07-22 | Hitachi Kokusai Electric Inc | 基板処理方法 |
| US9299581B2 (en) * | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
| TWI526257B (zh) * | 2012-11-27 | 2016-03-21 | 東京威力科創股份有限公司 | 使用噴嘴清洗基板上之一層的控制 |
| US8764905B1 (en) | 2013-03-14 | 2014-07-01 | Intel Corporation | Cleaning organic residues from EUV optics and masks |
| WO2015070168A1 (en) * | 2013-11-11 | 2015-05-14 | Tokyo Electron Limited | Method and hardware for enhanced removal of post etch polymer and hardmask removal |
| US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
-
2017
- 2017-03-08 US US15/452,832 patent/US10490399B2/en active Active
- 2017-03-09 TW TW106107706A patent/TWI774662B/zh active
- 2017-03-09 KR KR1020170030064A patent/KR102362672B1/ko active Active
- 2017-03-09 CN CN201710137464.0A patent/CN107180774B/zh active Active
- 2017-03-09 JP JP2017044944A patent/JP6948808B2/ja active Active
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