JP2017155313A - 混合ガス複数系統供給システム及びこれを用いた基板処理装置 - Google Patents
混合ガス複数系統供給システム及びこれを用いた基板処理装置 Download PDFInfo
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Abstract
Description
共通の混合ガス供給路に接続され、混合ガスを複数の供給系統に分岐するとともに、該複数の供給系統の流量比率を調整可能なフロースプリッターと、
処理容器内の複数の領域の各々にガス導入口とガス吐出孔を有し、前記複数の領域の各々に前記混合ガスを供給可能なインジェクタと、を有し、
前記フロースプリッターの前記複数の供給系統の各々は、前記処理容器内の前記複数の領域の各々の前記ガス導入口に1対1に接続されている。
前記処理容器と、
前記処理容器内で基板を保持する基板保持手段と、を有する。
図2は、本発明の第2の実施形態に係る混合ガス複数系統供給システム及び基板処理装置の一例を示した図である。なお、第2の実施形態において、混合ガス生成部200の構成については、第1の実施形態と同様であるので、同一の参照符号を付してその説明を省略する。
図3は、本発明の第3の実施形態に係る混合ガス複数系統供給システム252及び基板処理装置302の一例を示した図である。なお、第3の実施形態において、混合ガス生成部200の構成については、第1及び第2の実施形態と同様であるので、同一の参照符号を付してその説明を省略する。
以下の実施形態では、第1乃至第3の実施形態において説明した混合ガス複数系統供給システム250及び基板処理装置300〜302を、より具体的な基板処理装置に適用する例について説明する。第4の実施形態に係る基板処理装置303は、ALD(Atomic Layer Deposition、原子層成膜方法)成膜装置として構成されており、ALD法により成膜を行う装置である。
図8は、本発明の第5の実施形態に係る混合ガス複数系統供給システム254及び基板処理装置304の一例を示した図である。図8において、フロースプリッター210に接続されたインジェクタ130dが1本となり、インジェクタ130dは、3つの領域となる室131d〜133dを有している。
図10は、本発明の第6の実施形態に係る混合ガス複数系統供給システム及び基板処理装置のインジェクタ130eの一例を示した図である。図10において、フロースプリッター210に接続されたインジェクタ130eが1本とであり、インジェクタ130eの内部は、隔壁121c、122cにより分割され、3つの室131e、132e、133eに分割されている。隔壁121c、122cには、連通口となるオリフィス111b、112bが形成され、各室131e〜132e同士が連通可能に構成されている。つまり、これは、第3の実施形態に係る基板処理装置302を具体的なALD成膜装置に適用した例である。このように、第6の実施形態に係る基板処理装置によれば、処理容器1内の各領域に対し、なめらかな流量分布で混合ガスを供給することができ、ALD成膜処理を行うことができる。
図11は、本発明の第7の実施形態に係る混合ガス複数系統供給システム255及び基板処理装置305の一例を示した図である。第7の実施形態に係る混合ガス複数系統供給システム255及び基板処理装置305においては、インジェクタ130fが1本である点は第5及び第6の実施形態に係る基板処理装置304と共通するが、ガス導入ポート1130aが1個だけ容器本体12の外周に設けられている点で、第5及び第6の実施形態に係る基板処理装置303と異なっている。
図13は、第8の実施形態に係る基板処理装置のインジェクタ130gの一例を示した図である。第8の実施形態に係る混合ガス複数系統供給装置及び基板処理装置は、図11に示した第7の実施形態に係る混合ガス複数系統供給装置255及び基板処理装置305と同様の平面構成を有するが、インジェクタ130gの構造のみが異なっている。
図14は、本発明の第9の実施形態に係る基板処理装置の一例を示した図である。第9の実施形態に係る混合ガス複数系統供給システム256及び基板処理装置306は、混合ガス生成部200及びフロースプリッター210を縦型熱処理装置に適用した例について説明する。
図16は、本発明の第10の実施形態に係る混合ガス複数系統供給システム及び基板処理装置のインジェクタ130iの一例を示した図である。第10の実施形態に係る基板処理装置は、図14に示した第9の実施形態に係る混合ガス複数系統供給システム256及び基板処理装置306と同様の全体構成を有するが、インジェクタ130iの構造のみが異なっている。
図17は、本発明の第10の実施形態に係る混合ガス複数系統供給システム及び基板処理装置のインジェクタ131j〜133jの一例を示した図である。第11の実施形態に係る混合ガス複数系統供給システム及び基板処理装置は、図14に示した第9の実施形態に係る基板処理装置306と類似した全体構成を有するが、図17に示されるように、気化原料を供給するインジェクタ131j〜133jが複数本に増加するとともに、各インジェクタ131j〜133jが処理容器422の高さ方向において異なる領域に気化原料を供給可能なようにガス吐出孔151〜153が設けられている点で、第9及び第10の実施形態に係る混合ガス複数系統供給システム256及び基板処理装置306と異なっている。
2 回転テーブル
111、111a〜111d、112、112a〜112d オリフィス
121、121a〜121g、122、122a〜122g、1210、1210a、1211、1220、1220a、1221 隔壁
130、130a〜130j、131、131c、131j、132、132c、132j、133、133c、133j インジェクタ
131a、131b、131d〜131i、132a、132b、132d〜132i、133a、133b、133d〜133i 室
141、141a、141b、142、142a、142b、143、143a、143b ガス導入口
151〜153 ガス吐出孔
161〜163 ガス供給源
171〜173 流量制御器
181〜183 個別配管
190 混合配管
200 混合ガス生成部
210 フロースプリッター
221〜223 分岐配管
250〜256 混合ガス複数系統供給システム
300〜306 基板処理装置
434 ウエハボート
Claims (13)
- 共通の混合ガス供給路に接続され、混合ガスを複数の供給系統に分岐するとともに、該複数の供給系統の流量比率を調整可能なフロースプリッターと、
処理容器内の複数の領域の各々にガス導入口とガス吐出孔を有し、前記複数の領域の各々に前記混合ガスを供給可能なインジェクタと、を有し、
前記フロースプリッターの前記複数の供給系統の各々は、前記処理容器内の前記複数の領域の各々の前記ガス導入口に1対1に接続されている混合ガス複数系統供給システム。 - 前記混合ガス供給路の上流側には、前記混合ガスを構成する複数種類のガスを前記混合ガス供給路に各々所定流量で供給するための複数の供給路及び流量制御器が、1種類のガスにつき1つずつ設けられている請求項1に記載の混合ガス複数系統供給システム。
- 前記ガス吐出孔は、前記複数の領域の各々に複数個ずつ設けられている請求項1又は2に記載の混合ガス複数系統供給システム。
- 複数の前記ガス吐出孔は、前記複数の領域毎に孔径、数、及び/又は位置が調整されている請求項1乃至3のいずれか一項に記載の混合ガス複数系統供給システム。
- 前記複数の領域には、別個独立した前記インジェクタが各々設けられている請求項1乃至4のいずれか一項に記載の混合ガス複数系統供給システム。
- 前記インジェクタ同士は、前記混合ガスの供給が互いに重ならない領域を含む請求項5に記載の混合ガス複数系統供給システム。
- 隣接する前記インジェクタ同士は、前記混合ガスの供給が互いに重なる領域を一部含む請求項6に記載の混合ガス複数系統供給システム。
- 前記複数の領域は、1本の前記インジェクタの内部が隔壁により仕切られて複数の室として構成された請求項1乃至4のいずれか一項に記載の混合ガス複数系統供給システム。
- 前記隔壁には連通口が設けられ、前記複数の室同士が互いに連通可能に構成された請求項8に記載の混合ガス複数系統供給システム。
- 前記隔壁及び前記連通口が複数設けられ、複数の前記連通口のうち、位置及び/又は大きさが他と異なっている前記連通口を含む請求項9に記載の混合ガス複数系統供給システム。
- 請求項1乃至10のいずれか一項に記載の混合ガス複数系統供給システムと、
前記処理容器と、
前記処理容器内で基板を保持する基板保持手段と、を有する基板処理装置。 - 前記処理容器は、高さよりも横幅が大きい円筒形状を有し、
前記基板保持手段は上面に前記基板を保持可能な回転テーブルであり、
前記インジェクタは該回転テーブルよりも上方に半径方向に沿って配置され、
該回転テーブルの周方向において前記インジェクタから離間して設けられたガスノズルを更に有する請求項11に記載の基板処理装置。 - 前記処理容器は縦長の円筒形状を有し、
前記基板保持手段は、複数の前記基板を、上面視で重なるように、鉛直方向に離間して多段に積載可能なウエハボートであり、
前記インジェクタは前記処理容器の内壁面に沿って鉛直方向に延在して配置され、
前記処理容器の外周側面を囲むように配置された加熱手段を更に有する請求項11に記載の基板処理装置。
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