JP2017143244A5 - - Google Patents
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- Publication number
- JP2017143244A5 JP2017143244A5 JP2016233796A JP2016233796A JP2017143244A5 JP 2017143244 A5 JP2017143244 A5 JP 2017143244A5 JP 2016233796 A JP2016233796 A JP 2016233796A JP 2016233796 A JP2016233796 A JP 2016233796A JP 2017143244 A5 JP2017143244 A5 JP 2017143244A5
- Authority
- JP
- Japan
- Prior art keywords
- precession
- substrate
- actuator
- substrate support
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 87
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 26
- 238000004891 communication Methods 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000004590 computer program Methods 0.000 claims description 4
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/956,154 US9812349B2 (en) | 2015-12-01 | 2015-12-01 | Control of the incidence angle of an ion beam on a substrate |
| US14/956,154 | 2015-12-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017143244A JP2017143244A (ja) | 2017-08-17 |
| JP2017143244A5 true JP2017143244A5 (enExample) | 2020-01-16 |
| JP6809885B2 JP6809885B2 (ja) | 2021-01-06 |
Family
ID=58777104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016233796A Active JP6809885B2 (ja) | 2015-12-01 | 2016-12-01 | 基板におけるイオンビームの入射角の制御 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9812349B2 (enExample) |
| JP (1) | JP6809885B2 (enExample) |
| KR (1) | KR102498416B1 (enExample) |
| TW (1) | TWI708287B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10043636B2 (en) * | 2015-12-10 | 2018-08-07 | Lam Research Corporation | Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal |
| KR102410974B1 (ko) * | 2017-10-13 | 2022-06-20 | 삼성전자주식회사 | 반도체 제조 장치의 구동 방법 |
| CN108279552B (zh) * | 2018-01-26 | 2021-04-27 | 京东方科技集团股份有限公司 | 基板载台和曝光机 |
| US20190393053A1 (en) * | 2018-06-20 | 2019-12-26 | Applied Materials, Inc. | Etching apparatus |
| KR102841149B1 (ko) | 2018-12-17 | 2025-07-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 광학 디바이스 제작을 위한 이온 빔 소스 |
| CN113544834A (zh) | 2019-03-18 | 2021-10-22 | 磁共振谱成像系统有限公司 | 具有加热式自动夹头更换器的裸片接合系统 |
| TW202104628A (zh) | 2019-04-19 | 2021-02-01 | 美商應用材料股份有限公司 | 用於控制pvd沉積均勻性的系統及方法 |
| US11557473B2 (en) * | 2019-04-19 | 2023-01-17 | Applied Materials, Inc. | System and method to control PVD deposition uniformity |
| US11387071B2 (en) | 2019-10-06 | 2022-07-12 | Applied Materials, Inc. | Multi-source ion beam etch system |
| US11742231B2 (en) | 2019-10-18 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Movable wafer holder for film deposition chamber having six degrees of freedom |
| KR102788383B1 (ko) | 2020-07-16 | 2025-04-01 | 삼성전자주식회사 | 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법 |
| CN112435957A (zh) * | 2020-11-19 | 2021-03-02 | 长江存储科技有限责任公司 | 半导体器件及其制作方法 |
| KR20250150557A (ko) * | 2023-02-16 | 2025-10-20 | 램 리써치 코포레이션 | 기판 프로세싱을 위한 페데스탈 및 샤워헤드 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5763020A (en) * | 1994-10-17 | 1998-06-09 | United Microelectronics Corporation | Process for evenly depositing ions using a tilting and rotating platform |
| JP2000012525A (ja) * | 1998-06-25 | 2000-01-14 | Sony Corp | アッシング装置および有機膜の除去方法 |
| JP2000311866A (ja) | 1999-04-27 | 2000-11-07 | Toshiba Ceramics Co Ltd | 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法 |
| JP4182643B2 (ja) * | 2001-01-10 | 2008-11-19 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| US7413612B2 (en) * | 2003-07-10 | 2008-08-19 | Applied Materials, Inc. | In situ substrate holder leveling method and apparatus |
| JP2005012230A (ja) * | 2004-07-13 | 2005-01-13 | Sanyo Electric Co Ltd | 誘電体素子の製造方法 |
| JP4550540B2 (ja) * | 2004-10-05 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | 試料台及びイオンスパッタ装置 |
| US20090084757A1 (en) | 2007-09-28 | 2009-04-02 | Yuri Erokhin | Uniformity control for ion beam assisted etching |
| US9016236B2 (en) * | 2008-08-04 | 2015-04-28 | International Business Machines Corporation | Method and apparatus for angular high density plasma chemical vapor deposition |
| JP5277266B2 (ja) | 2011-02-18 | 2013-08-28 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ及び半導体製造方法 |
| KR101661638B1 (ko) * | 2012-11-02 | 2016-09-30 | 캐논 아네르바 가부시키가이샤 | 반도체 장치의 제조 방법, 이온빔 에칭 장치 및 제어 장치 |
| US9017526B2 (en) | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
| JP5908001B2 (ja) * | 2014-01-16 | 2016-04-26 | 東京エレクトロン株式会社 | 基板処理装置 |
| TWI661502B (zh) * | 2014-02-27 | 2019-06-01 | 日商斯克林集團公司 | 基板處理裝置 |
| US9536748B2 (en) * | 2014-10-21 | 2017-01-03 | Lam Research Corporation | Use of ion beam etching to generate gate-all-around structure |
| KR20170028495A (ko) * | 2015-09-03 | 2017-03-14 | 삼성전자주식회사 | 척의 틸팅이 가능한 척 어셈블리 및 이를 갖는 반도체 제조장치 |
| US10249525B2 (en) * | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
-
2015
- 2015-12-01 US US14/956,154 patent/US9812349B2/en active Active
-
2016
- 2016-12-01 JP JP2016233796A patent/JP6809885B2/ja active Active
- 2016-12-01 TW TW105139596A patent/TWI708287B/zh active
- 2016-12-01 KR KR1020160162508A patent/KR102498416B1/ko active Active
-
2017
- 2017-08-01 US US15/666,548 patent/US20170330788A1/en not_active Abandoned
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