JP2017143244A5 - - Google Patents

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JP2017143244A5
JP2017143244A5 JP2016233796A JP2016233796A JP2017143244A5 JP 2017143244 A5 JP2017143244 A5 JP 2017143244A5 JP 2016233796 A JP2016233796 A JP 2016233796A JP 2016233796 A JP2016233796 A JP 2016233796A JP 2017143244 A5 JP2017143244 A5 JP 2017143244A5
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JP
Japan
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precession
substrate
actuator
substrate support
support
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JP2016233796A
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Japanese (ja)
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JP2017143244A (ja
JP6809885B2 (ja
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Priority claimed from US14/956,154 external-priority patent/US9812349B2/en
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JP2016233796A 2015-12-01 2016-12-01 基板におけるイオンビームの入射角の制御 Active JP6809885B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/956,154 2015-12-01
US14/956,154 US9812349B2 (en) 2015-12-01 2015-12-01 Control of the incidence angle of an ion beam on a substrate

Publications (3)

Publication Number Publication Date
JP2017143244A JP2017143244A (ja) 2017-08-17
JP2017143244A5 true JP2017143244A5 (enExample) 2020-01-16
JP6809885B2 JP6809885B2 (ja) 2021-01-06

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JP2016233796A Active JP6809885B2 (ja) 2015-12-01 2016-12-01 基板におけるイオンビームの入射角の制御

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US (2) US9812349B2 (enExample)
JP (1) JP6809885B2 (enExample)
KR (1) KR102498416B1 (enExample)
TW (1) TWI708287B (enExample)

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CN108279552B (zh) * 2018-01-26 2021-04-27 京东方科技集团股份有限公司 基板载台和曝光机
US20190393053A1 (en) * 2018-06-20 2019-12-26 Applied Materials, Inc. Etching apparatus
JP7410951B2 (ja) 2018-12-17 2024-01-10 アプライド マテリアルズ インコーポレイテッド 電子ビーム装置を使用した光学装置の製造方法
WO2020190991A1 (en) * 2019-03-18 2020-09-24 Mrsi Systems Llc Die bonding system with heated automatic collet changer
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
US11742231B2 (en) 2019-10-18 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Movable wafer holder for film deposition chamber having six degrees of freedom
KR102788383B1 (ko) 2020-07-16 2025-04-01 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
CN112435957A (zh) * 2020-11-19 2021-03-02 长江存储科技有限责任公司 半导体器件及其制作方法
CN120712645A (zh) * 2023-02-16 2025-09-26 朗姆研究公司 用于衬底处理的基座和喷头

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US5763020A (en) * 1994-10-17 1998-06-09 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
JP2000012525A (ja) * 1998-06-25 2000-01-14 Sony Corp アッシング装置および有機膜の除去方法
JP2000311866A (ja) * 1999-04-27 2000-11-07 Toshiba Ceramics Co Ltd 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法
JP4182643B2 (ja) * 2001-01-10 2008-11-19 東京エレクトロン株式会社 処理装置及び処理方法
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
JP2005012230A (ja) * 2004-07-13 2005-01-13 Sanyo Electric Co Ltd 誘電体素子の製造方法
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US20090084757A1 (en) * 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
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