TWI708287B - 基板上離子束之入射角控制 - Google Patents

基板上離子束之入射角控制 Download PDF

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Publication number
TWI708287B
TWI708287B TW105139596A TW105139596A TWI708287B TW I708287 B TWI708287 B TW I708287B TW 105139596 A TW105139596 A TW 105139596A TW 105139596 A TW105139596 A TW 105139596A TW I708287 B TWI708287 B TW I708287B
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Taiwan
Prior art keywords
substrate
precession
substrate support
actuator
patent application
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TW105139596A
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English (en)
Chinese (zh)
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TW201729287A (zh
Inventor
伊弗霖 安格洛夫
伊凡 Ｌ 貝里三世
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美商蘭姆研究公司
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    • H10P30/222—
    • H10P72/7618—
    • H10P30/2042—
    • H10P30/224—
    • H10P50/242—
    • H10P72/0421—
    • H10P72/72—
    • H10P72/74—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
TW105139596A 2015-12-01 2016-12-01 基板上離子束之入射角控制 TWI708287B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/956,154 2015-12-01
US14/956,154 US9812349B2 (en) 2015-12-01 2015-12-01 Control of the incidence angle of an ion beam on a substrate

Publications (2)

Publication Number Publication Date
TW201729287A TW201729287A (zh) 2017-08-16
TWI708287B true TWI708287B (zh) 2020-10-21

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Family Applications (1)

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TW105139596A TWI708287B (zh) 2015-12-01 2016-12-01 基板上離子束之入射角控制

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US (2) US9812349B2 (enExample)
JP (1) JP6809885B2 (enExample)
KR (1) KR102498416B1 (enExample)
TW (1) TWI708287B (enExample)

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US10043636B2 (en) * 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
KR102410974B1 (ko) * 2017-10-13 2022-06-20 삼성전자주식회사 반도체 제조 장치의 구동 방법
CN108279552B (zh) * 2018-01-26 2021-04-27 京东方科技集团股份有限公司 基板载台和曝光机
US20190393053A1 (en) * 2018-06-20 2019-12-26 Applied Materials, Inc. Etching apparatus
JP7410951B2 (ja) 2018-12-17 2024-01-10 アプライド マテリアルズ インコーポレイテッド 電子ビーム装置を使用した光学装置の製造方法
WO2020190991A1 (en) * 2019-03-18 2020-09-24 Mrsi Systems Llc Die bonding system with heated automatic collet changer
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
US11742231B2 (en) 2019-10-18 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Movable wafer holder for film deposition chamber having six degrees of freedom
KR102788383B1 (ko) 2020-07-16 2025-04-01 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
CN112435957A (zh) * 2020-11-19 2021-03-02 长江存储科技有限责任公司 半导体器件及其制作方法
CN120712645A (zh) * 2023-02-16 2025-09-26 朗姆研究公司 用于衬底处理的基座和喷头

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US20040244694A1 (en) * 2001-01-10 2004-12-09 Daisuke Hayashi Processing unit and processing method
US20100029082A1 (en) * 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition

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US5763020A (en) * 1994-10-17 1998-06-09 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
JP2000012525A (ja) * 1998-06-25 2000-01-14 Sony Corp アッシング装置および有機膜の除去方法
JP2000311866A (ja) * 1999-04-27 2000-11-07 Toshiba Ceramics Co Ltd 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
JP2005012230A (ja) * 2004-07-13 2005-01-13 Sanyo Electric Co Ltd 誘電体素子の製造方法
JP4550540B2 (ja) * 2004-10-05 2010-09-22 株式会社日立ハイテクノロジーズ 試料台及びイオンスパッタ装置
US20090084757A1 (en) * 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
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JP5908001B2 (ja) * 2014-01-16 2016-04-26 東京エレクトロン株式会社 基板処理装置
US9728443B2 (en) * 2014-02-27 2017-08-08 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040244694A1 (en) * 2001-01-10 2004-12-09 Daisuke Hayashi Processing unit and processing method
US20100029082A1 (en) * 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition

Also Published As

Publication number Publication date
JP2017143244A (ja) 2017-08-17
TW201729287A (zh) 2017-08-16
JP6809885B2 (ja) 2021-01-06
US20170330788A1 (en) 2017-11-16
US20170154804A1 (en) 2017-06-01
KR102498416B1 (ko) 2023-02-09
US9812349B2 (en) 2017-11-07
KR20170070818A (ko) 2017-06-22

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