TWI708287B - 基板上離子束之入射角控制 - Google Patents

基板上離子束之入射角控制 Download PDF

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Publication number
TWI708287B
TWI708287B TW105139596A TW105139596A TWI708287B TW I708287 B TWI708287 B TW I708287B TW 105139596 A TW105139596 A TW 105139596A TW 105139596 A TW105139596 A TW 105139596A TW I708287 B TWI708287 B TW I708287B
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TW
Taiwan
Prior art keywords
substrate
precession
substrate support
actuator
patent application
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TW105139596A
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English (en)
Chinese (zh)
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TW201729287A (zh
Inventor
伊弗霖 安格洛夫
伊凡 Ｌ 貝里三世
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美商蘭姆研究公司
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Publication of TW201729287A publication Critical patent/TW201729287A/zh
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Publication of TWI708287B publication Critical patent/TWI708287B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/224—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW105139596A 2015-12-01 2016-12-01 基板上離子束之入射角控制 TWI708287B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/956,154 US9812349B2 (en) 2015-12-01 2015-12-01 Control of the incidence angle of an ion beam on a substrate
US14/956,154 2015-12-01

Publications (2)

Publication Number Publication Date
TW201729287A TW201729287A (zh) 2017-08-16
TWI708287B true TWI708287B (zh) 2020-10-21

Family

ID=58777104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139596A TWI708287B (zh) 2015-12-01 2016-12-01 基板上離子束之入射角控制

Country Status (4)

Country Link
US (2) US9812349B2 (enExample)
JP (1) JP6809885B2 (enExample)
KR (1) KR102498416B1 (enExample)
TW (1) TWI708287B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10043636B2 (en) * 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
KR102410974B1 (ko) * 2017-10-13 2022-06-20 삼성전자주식회사 반도체 제조 장치의 구동 방법
CN108279552B (zh) * 2018-01-26 2021-04-27 京东方科技集团股份有限公司 基板载台和曝光机
US20190393053A1 (en) * 2018-06-20 2019-12-26 Applied Materials, Inc. Etching apparatus
EP3899615A4 (en) 2018-12-17 2023-01-04 Applied Materials, Inc. ELECTRON BEAM DEVICE FOR THE MANUFACTURE OF AN OPTICAL DEVICE
US12237202B2 (en) 2019-03-18 2025-02-25 MRSI Systems, LLC Die bonding system with heated automatic collet changer
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
US11742231B2 (en) 2019-10-18 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Movable wafer holder for film deposition chamber having six degrees of freedom
KR102788383B1 (ko) 2020-07-16 2025-04-01 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
CN112435957A (zh) * 2020-11-19 2021-03-02 长江存储科技有限责任公司 半导体器件及其制作方法
KR20250150557A (ko) * 2023-02-16 2025-10-20 램 리써치 코포레이션 기판 프로세싱을 위한 페데스탈 및 샤워헤드

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040244694A1 (en) * 2001-01-10 2004-12-09 Daisuke Hayashi Processing unit and processing method
US20100029082A1 (en) * 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763020A (en) * 1994-10-17 1998-06-09 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
JP2000012525A (ja) * 1998-06-25 2000-01-14 Sony Corp アッシング装置および有機膜の除去方法
JP2000311866A (ja) * 1999-04-27 2000-11-07 Toshiba Ceramics Co Ltd 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
JP2005012230A (ja) * 2004-07-13 2005-01-13 Sanyo Electric Co Ltd 誘電体素子の製造方法
JP4550540B2 (ja) * 2004-10-05 2010-09-22 株式会社日立ハイテクノロジーズ 試料台及びイオンスパッタ装置
US20090084757A1 (en) * 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
JP5277266B2 (ja) * 2011-02-18 2013-08-28 株式会社日立ハイテクインスツルメンツ ダイボンダ及び半導体製造方法
JP6138143B2 (ja) * 2012-11-02 2017-05-31 キヤノンアネルバ株式会社 半導体装置の製造方法
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
JP5908001B2 (ja) * 2014-01-16 2016-04-26 東京エレクトロン株式会社 基板処理装置
CN108155133B (zh) * 2014-02-27 2022-04-15 斯克林集团公司 基板处理装置
US9536748B2 (en) * 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
KR20170028495A (ko) * 2015-09-03 2017-03-14 삼성전자주식회사 척의 틸팅이 가능한 척 어셈블리 및 이를 갖는 반도체 제조장치
US10249525B2 (en) * 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040244694A1 (en) * 2001-01-10 2004-12-09 Daisuke Hayashi Processing unit and processing method
US20100029082A1 (en) * 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition

Also Published As

Publication number Publication date
JP2017143244A (ja) 2017-08-17
US9812349B2 (en) 2017-11-07
US20170330788A1 (en) 2017-11-16
KR102498416B1 (ko) 2023-02-09
US20170154804A1 (en) 2017-06-01
TW201729287A (zh) 2017-08-16
KR20170070818A (ko) 2017-06-22
JP6809885B2 (ja) 2021-01-06

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