KR102498416B1 - 기판 상의 이온 빔 입사 각 제어 - Google Patents

기판 상의 이온 빔 입사 각 제어 Download PDF

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Publication number
KR102498416B1
KR102498416B1 KR1020160162508A KR20160162508A KR102498416B1 KR 102498416 B1 KR102498416 B1 KR 102498416B1 KR 1020160162508 A KR1020160162508 A KR 1020160162508A KR 20160162508 A KR20160162508 A KR 20160162508A KR 102498416 B1 KR102498416 B1 KR 102498416B1
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South Korea
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substrate
substrate support
forward motion
actuator
support
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Korean (ko)
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KR20170070818A (ko
Inventor
이블린 앤젤로브
3세 이반 엘. 베리
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H01L21/26586—
    • H01L21/047—
    • H01L21/26566—
    • H01L21/3065—
    • H01L21/6831—
    • H01L21/6835—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/224—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020160162508A 2015-12-01 2016-12-01 기판 상의 이온 빔 입사 각 제어 Active KR102498416B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/956,154 US9812349B2 (en) 2015-12-01 2015-12-01 Control of the incidence angle of an ion beam on a substrate
US14/956,154 2015-12-01

Publications (2)

Publication Number Publication Date
KR20170070818A KR20170070818A (ko) 2017-06-22
KR102498416B1 true KR102498416B1 (ko) 2023-02-09

Family

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KR1020160162508A Active KR102498416B1 (ko) 2015-12-01 2016-12-01 기판 상의 이온 빔 입사 각 제어

Country Status (4)

Country Link
US (2) US9812349B2 (enExample)
JP (1) JP6809885B2 (enExample)
KR (1) KR102498416B1 (enExample)
TW (1) TWI708287B (enExample)

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US10043636B2 (en) * 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
KR102410974B1 (ko) * 2017-10-13 2022-06-20 삼성전자주식회사 반도체 제조 장치의 구동 방법
CN108279552B (zh) * 2018-01-26 2021-04-27 京东方科技集团股份有限公司 基板载台和曝光机
US20190393053A1 (en) * 2018-06-20 2019-12-26 Applied Materials, Inc. Etching apparatus
EP3899615A4 (en) 2018-12-17 2023-01-04 Applied Materials, Inc. ELECTRON BEAM DEVICE FOR THE MANUFACTURE OF AN OPTICAL DEVICE
US12237202B2 (en) 2019-03-18 2025-02-25 MRSI Systems, LLC Die bonding system with heated automatic collet changer
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
US11742231B2 (en) 2019-10-18 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Movable wafer holder for film deposition chamber having six degrees of freedom
KR102788383B1 (ko) 2020-07-16 2025-04-01 삼성전자주식회사 플라즈마 식각 장치, 플라즈마 식각 방법 및 그를 포함하는 반도체 소자의 제조 방법
CN112435957A (zh) * 2020-11-19 2021-03-02 长江存储科技有限责任公司 半导体器件及其制作方法
KR20250150557A (ko) * 2023-02-16 2025-10-20 램 리써치 코포레이션 기판 프로세싱을 위한 페데스탈 및 샤워헤드

Citations (6)

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JP2000311866A (ja) 1999-04-27 2000-11-07 Toshiba Ceramics Co Ltd 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法
JP2002208555A (ja) 2001-01-10 2002-07-26 Tokyo Electron Ltd 処理装置及び処理方法
US20090084757A1 (en) 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
US20100029082A1 (en) 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition
US20120214258A1 (en) 2011-02-18 2012-08-23 Hitachi High-Tech Instruments Co., Ltd Die Bonder and Semiconductor Manufacturing Method
US20150243542A1 (en) 2014-02-27 2015-08-27 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method

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US5763020A (en) * 1994-10-17 1998-06-09 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
JP2000012525A (ja) * 1998-06-25 2000-01-14 Sony Corp アッシング装置および有機膜の除去方法
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
JP2005012230A (ja) * 2004-07-13 2005-01-13 Sanyo Electric Co Ltd 誘電体素子の製造方法
JP4550540B2 (ja) * 2004-10-05 2010-09-22 株式会社日立ハイテクノロジーズ 試料台及びイオンスパッタ装置
JP6138143B2 (ja) * 2012-11-02 2017-05-31 キヤノンアネルバ株式会社 半導体装置の製造方法
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
JP5908001B2 (ja) * 2014-01-16 2016-04-26 東京エレクトロン株式会社 基板処理装置
US9536748B2 (en) * 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
KR20170028495A (ko) * 2015-09-03 2017-03-14 삼성전자주식회사 척의 틸팅이 가능한 척 어셈블리 및 이를 갖는 반도체 제조장치
US10249525B2 (en) * 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311866A (ja) 1999-04-27 2000-11-07 Toshiba Ceramics Co Ltd 縦型熱処理炉およびこれを用いた半導体ウェーハ熱処理方法
JP2002208555A (ja) 2001-01-10 2002-07-26 Tokyo Electron Ltd 処理装置及び処理方法
US20090084757A1 (en) 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
US20100029082A1 (en) 2008-08-04 2010-02-04 International Business Machines Corporation Method and apparatus for angular high density plasma chemical vapor deposition
US20120214258A1 (en) 2011-02-18 2012-08-23 Hitachi High-Tech Instruments Co., Ltd Die Bonder and Semiconductor Manufacturing Method
US20150243542A1 (en) 2014-02-27 2015-08-27 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
JP2017143244A (ja) 2017-08-17
US9812349B2 (en) 2017-11-07
US20170330788A1 (en) 2017-11-16
US20170154804A1 (en) 2017-06-01
TW201729287A (zh) 2017-08-16
TWI708287B (zh) 2020-10-21
KR20170070818A (ko) 2017-06-22
JP6809885B2 (ja) 2021-01-06

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