JP2017137523A5 - - Google Patents

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Publication number
JP2017137523A5
JP2017137523A5 JP2016017434A JP2016017434A JP2017137523A5 JP 2017137523 A5 JP2017137523 A5 JP 2017137523A5 JP 2016017434 A JP2016017434 A JP 2016017434A JP 2016017434 A JP2016017434 A JP 2016017434A JP 2017137523 A5 JP2017137523 A5 JP 2017137523A5
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JP
Japan
Prior art keywords
wafer
semiconductor wafer
support plate
plating
semiconductor
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JP2016017434A
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Japanese (ja)
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JP2017137523A (en
JP6746185B2 (en
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Priority to JP2016017434A priority Critical patent/JP6746185B2/en
Priority claimed from JP2016017434A external-priority patent/JP6746185B2/en
Publication of JP2017137523A publication Critical patent/JP2017137523A/en
Publication of JP2017137523A5 publication Critical patent/JP2017137523A5/ja
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Claims (5)

ウェハの裏面全体に略均一に少なくとも2種類以上の異なる種類の金属めっきを積層して構成したことを特徴とする半導体ウェハ。   A semiconductor wafer comprising at least two different types of metal plating laminated substantially uniformly on the entire back surface of the wafer. 間に半導体ウェハを挟持するように、ウェハ保持盤とそれとは別体のウェハ圧接盤とを圧着固定する圧着治具とより構成し、
ウェハ保持盤は、
外周縁に懸架部を突設した一定幅員の環状支持板と、
環状支持板面に形成した位置決め部と、
環状支持板の内周縁部に形成したウェハ保持部と、により構成し、
ウェハ圧接盤は、
環状支持板の支持板面に圧接する環状板と、
環状支持板の位置決め部に嵌着自在となるように環状板面に形成した嵌着部と、
より構成してなる請求項1に記載の半導体ウェハを製造するための半導体ウェハめっき用治具。
It is composed of a wafer holding disk and a crimping jig that crimps and fixes a wafer pressure welding board separate from the wafer holder so that the semiconductor wafer is sandwiched between them,
The wafer holder is
A fixed-width annular support plate with a suspension projecting from the outer periphery;
A positioning part formed on the annular support plate surface;
A wafer holding part formed on the inner peripheral edge of the annular support plate,
Wafer pressure welding machine
An annular plate in pressure contact with the support plate surface of the annular support plate;
A fitting portion formed on the annular plate surface so as to be freely fitted to the positioning portion of the annular support plate;
A semiconductor wafer plating jig for manufacturing the semiconductor wafer according to claim 1, further comprising:
ウェハ保持盤とウェハ圧接盤との間に圧着治具を介して半導体ウェハを挟持圧着固定してめっき槽中に浸漬し、半導体ウェハ裏面に少なくとも2種類以上の異なる種類の金属めっきを形成し、水洗、乾燥することを特徴とする請求項2に記載の半導体ウェハめっき用治具を用いた半導体ウェハのめっき処理方法。   A semiconductor wafer is clamped and fixed between a wafer holding plate and a wafer pressure bonding plate via a pressure bonding jig and immersed in a plating bath, and at least two different types of metal plating are formed on the back surface of the semiconductor wafer. 3. A semiconductor wafer plating method using the semiconductor wafer plating jig according to claim 2, wherein the semiconductor wafer plating jig is washed with water and dried. 請求項1に記載の半導体ウェハにより製造した半導体装置。   A semiconductor device manufactured by the semiconductor wafer according to claim 1. 請求項2に記載の半導体ウェハめっき用治具によりめっき処理した半導体ウェハによって製造した半導体装置。
A semiconductor device manufactured by a semiconductor wafer plated by the semiconductor wafer plating jig according to claim 2.
JP2016017434A 2016-02-01 2016-02-01 Jig for semiconductor wafer plating Active JP6746185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016017434A JP6746185B2 (en) 2016-02-01 2016-02-01 Jig for semiconductor wafer plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016017434A JP6746185B2 (en) 2016-02-01 2016-02-01 Jig for semiconductor wafer plating

Publications (3)

Publication Number Publication Date
JP2017137523A JP2017137523A (en) 2017-08-10
JP2017137523A5 true JP2017137523A5 (en) 2019-03-14
JP6746185B2 JP6746185B2 (en) 2020-08-26

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ID=59564851

Family Applications (1)

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JP2016017434A Active JP6746185B2 (en) 2016-02-01 2016-02-01 Jig for semiconductor wafer plating

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JP (1) JP6746185B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110359079A (en) * 2018-04-10 2019-10-22 中国科学院半导体研究所 Electroplating clamp
CN112259493A (en) * 2020-10-19 2021-01-22 绍兴同芯成集成电路有限公司 Electroplating and chemical plating integrated process for ultrathin wafer
KR102526481B1 (en) * 2023-01-31 2023-04-27 하이쎄미코(주) Cup cell for wafer plating

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324599Y2 (en) * 1987-06-26 1991-05-29
JP3286063B2 (en) * 1994-03-07 2002-05-27 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating rack and plating method using the same
JP3724110B2 (en) * 1997-04-24 2005-12-07 三菱電機株式会社 Manufacturing method of semiconductor device
JP3629396B2 (en) * 2000-03-07 2005-03-16 株式会社荏原製作所 Substrate plating jig
JP4424486B2 (en) * 2004-06-29 2010-03-03 Tdk株式会社 Cathode electrode assembly, cathode electrode device, and plating device
JP2007308783A (en) * 2006-05-22 2007-11-29 Matsushita Electric Ind Co Ltd Apparatus and method for electroplating
JP5184308B2 (en) * 2007-12-04 2013-04-17 株式会社荏原製作所 Plating apparatus and plating method
JP5483906B2 (en) * 2009-03-04 2014-05-07 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP6018961B2 (en) * 2013-03-26 2016-11-02 株式会社荏原製作所 Plating apparatus and plating method

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