CN112259493A - Electroplating and chemical plating integrated process for ultrathin wafer - Google Patents
Electroplating and chemical plating integrated process for ultrathin wafer Download PDFInfo
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- CN112259493A CN112259493A CN202011120973.0A CN202011120973A CN112259493A CN 112259493 A CN112259493 A CN 112259493A CN 202011120973 A CN202011120973 A CN 202011120973A CN 112259493 A CN112259493 A CN 112259493A
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- electroplating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
Abstract
The invention discloses an ultrathin wafer electroplating and chemical plating integration process, which comprises the following steps: bonding the ultrathin wafer of the glass carrier plate or the ultrathin wafer with the gentle slope-shaped edge, connecting the ultrathin wafer with a power supply contact point of an electroplating bath, starting an electroplating process, after the electroplating is finished, fixing the ultrathin wafer by an annular clamp, entering a rotary spraying cavity, finishing a photoresist removing step, carrying out a pretreatment process of seed layer etching and chemical plating, continuously fixing the ultrathin wafer by the annular clamp, entering a chemical plating bath, respectively finishing various metallization plating processes, finally finishing the steps of cleaning and drying the annular and ultrathin wafers, and separating the annular clamp from the ultrathin wafer. The integrated process of the ultrathin wafer electroplating and chemical plating integrated process equipment can be matched and matched horizontally/vertically, rotationally and in a soaking mode to finish the optimal process efficiency, and the ultrathin wafer is conveyed and positioned in different types of reaction tanks without interruption to finish each process, thereby avoiding natural oxidation or pollution generated at intervals.
Description
Technical Field
The invention relates to the field of semiconductor processes, in particular to an ultrathin wafer electroplating and chemical plating integrated process.
Background
A semiconductor 3D element or an MEMS (micro electro mechanical system) or a high-order high-power device is combined with an ultrathin wafer and a glass carrier plate, the TSV and the TGV are used for connecting an upper element and a lower element to form a 2.5D and 3D element which is rapid, low in loss and good in heat dissipation, and the advantages and the characteristics of chemical plating and electroplating need to be combined to achieve perfect metal communication and key joint.
Chemical plating, also known as electroless plating, is characterized in that the potential difference between metal on the surface of a substrate and electrolyte is utilized to naturally and spontaneously generate electrochemical reaction without adding electrodes and current, and has the advantages of achieving selective growth, only generating reaction on the part with the metal and not reacting on the part with an insulator, forming pattern distribution of a plating area without yellow patterns, but slowing down the ion exchange speed after the film thickness reaches a certain degree, being not beneficial to the manufacture of a thick-layer plating film, in addition, the chemical plating has very high requirements on the characteristics of the metal surface, and any natural oxide layer and organic matter or other pollution can seriously affect the effect of subsequent chemical plating, aiming at the situation, the characteristics of electrode plating and electroless plating are combined, and the integration process and equipment achieve the most efficient and high-yield wafer and glass carrier plate integration process, an integrated process for electroplating and chemical plating of an ultra-thin wafer is proposed.
Disclosure of Invention
The invention aims to provide an ultrathin wafer electroplating and chemical plating integrated process, the equipment integrated process can be matched and matched in a horizontal/vertical mode, a rotating mode and a soaking mode to finish the optimal process efficiency, the ultrathin wafer can be conveyed and positioned in different types of reaction tanks without interruption to finish each process, the natural oxidation or pollution generated at intervals can be avoided, the danger that the ultrathin wafer is broken in the conversion process of different equipment can be reduced, the risk that the ultrathin wafer is broken is greatly reduced due to the fact that no mechanical action of rapid rotation exists,
the purpose of the invention can be realized by the following technical scheme:
an ultra-thin wafer electroplating and chemical plating integrated process comprises the following steps:
s1, bonding the ultra-thin wafer or the ultra-thin wafer with the gentle slope edge of the glass carrier plate, horizontally transferring the wafer to the annular clamp bonding area, and fixing the wafer by the annular clamp;
s2, fixing the ultra-thin wafer by the ring fixture, and jointing the ultra-thin wafer with the power contact point of the electroplating bath to start the electroplating process;
s3, after the electroplating, the ring-shaped clamp fixes the ultra-thin wafer and enters the rotary spraying cavity to complete the photoresist removing step;
s4: performing pretreatment processes of seed layer etching and chemical plating, wherein the pretreatment processes comprise surface etching, cleaning, surface metal catalyst layer generation, chemical treatment, organic solvent, acid and alkali, and cleaning by using a vertical spraying device;
s5: the ring-shaped clamp continues to fix the ultrathin wafer to enter a chemical plating bath, and various metallization plating processes are respectively completed;
s6, cleaning and drying the ring-shaped ultra-thin wafer;
s7, separating the ring clamp from the ultra-thin wafer at the output end of the device, and recovering the ring clamp to return the ultra-thin wafer to the wafer box.
Further, in step S1, a semicircular clamp is used to combine the thick edge of the ultra-thin wafer, the clamp is designed with a connection point to an external power source, and the current is uniformly distributed to the surface of the wafer through the annular clamp.
Further, in the step S5, the metallization plating includes Au pd Ni.
The invention has the beneficial effects that:
1. the integrated process of the ultrathin wafer electroplating and chemical plating integrated process equipment can be matched horizontally/vertically, rotated and matched in a soaking way to complete the optimal process efficiency;
2. the ultrathin wafer can be uninterruptedly conveyed and positioned in different types of reaction tanks to finish each process, so that natural oxidation or pollution generated at intervals can be avoided, the danger that the ultrathin wafer is broken possibly in the conversion process of different devices can be reduced, and the risk of breaking the ultrathin wafer is greatly reduced due to no mechanical action of quick rotation.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a flow chart of the ultra-thin wafer electroplating and chemical plating integrated process apparatus of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "opening," "upper," "lower," "thickness," "top," "middle," "length," "inner," "peripheral," and the like are used in an orientation or positional relationship that is merely for convenience in describing and simplifying the description, and do not indicate or imply that the referenced component or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the present invention.
An integrated process of electroplating and chemical plating for an ultra-thin wafer, as shown in fig. 1, comprises the following steps:
s1, bonding the ultra-thin wafer of the glass carrier plate or the ultra-thin wafer with the gentle slope edge, horizontally transferring the wafer to the annular clamp bonding area, fixing the thicker edge of the ultra-thin wafer (the thicker part of the wafer periphery with the gentle slope or the step-shaped edge) by the annular clamp by adopting the semicircular clamp and bonding, designing the clamp with a communication point with an external power supply, and uniformly distributing the current to the surface of the wafer through the annular clamp so as to ensure that the uniform film forming is completed during electroplating and the wafer is not bent due to the over-thin thickness and the semi-annular clamp is embedded and fixed with the ultra-thin wafer;
s2, fixing the ultra-thin wafer by the ring fixture, and jointing the ultra-thin wafer with the power contact point of the electroplating bath to start the electroplating process;
s3, after the electroplating, the ring-shaped clamp fixes the ultra-thin wafer and enters the rotary spraying cavity to complete the photoresist removing step;
s4: the pretreatment process of seed layer etching and chemical plating is carried out, because of the protection and fixing action of the annular clamp, the risk of ultra-thin wafer fragment (including surface etching, cleaning and surface metal catalyst layer generation) can not be caused by rotating and spraying (including various chemical treatments and rotating a horizontal or vertical spraying device) (including organic solvent, acid, alkali and cleaning steps), the problem of bending caused by over-thinness can not be caused as long as the vertical soaking type wafer can be fixed, and the risk of ultra-thin wafer fragment can be greatly reduced because of no mechanical action of rapid rotation;
s5: the ring-shaped clamp continues to fix the ultrathin wafer and enters a chemical plating bath to respectively complete various metallization plating processes, wherein the metallization plating processes comprise Au pd Ni;
s6, cleaning and drying the ring-shaped ultra-thin wafer;
s7, separating the ring clamp from the ultra-thin wafer at the output end of the device, and recovering the ring clamp to return the ultra-thin wafer to the wafer box.
Example 1
An ultra-thin wafer bonded with a glass carrier or an ultra-thin wafer with a gentle slope edge is horizontally transferred to a ring-shaped clamp bonding area, a thicker edge (a part with thicker peripheral thickness of the wafer with the gentle slope or step-shaped edge) of the ultra-thin wafer is fixed by a ring-shaped clamp by adopting a semicircular clamp and bonding, a connecting point with an external power supply is designed on the clamp, current can be uniformly distributed on the surface of the wafer through the ring-shaped clamp, the ultra-thin wafer is fixed by the ring-shaped clamp, the ultra-thin wafer is bonded with a power supply contact point of an electroplating bath, an electroplating process is started, after the electroplating process is completed, the ultra-thin wafer is fixed by the ring-shaped clamp and enters a rotary spraying cavity, a light resistance removing step is completed, a pretreatment process of seed layer etching and chemical plating is performed, the pretreatment process comprises surface etching, cleaning, Acid, alkali and cleaning, wherein a rotary horizontal or vertical spraying device is adopted, the ultrathin wafer is continuously fixed by a ring-shaped clamp to enter a chemical plating tank, and various metallization plating processes are respectively completed, wherein the metallization plating process comprises Au pd Ni. And finally, cleaning and drying the ring and the ultrathin wafer, separating the ring clamp from the ultrathin wafer at the output end of the equipment, and recovering the ring clamp to return the ultrathin wafer to the wafer box.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (3)
1. An ultra-thin wafer electroplating and chemical plating integrated process is characterized by comprising the following steps:
s1, bonding the ultra-thin wafer or the ultra-thin wafer with the gentle slope edge of the glass carrier plate, horizontally transferring the wafer to the annular clamp bonding area, and fixing the wafer by the annular clamp;
s2, fixing the ultra-thin wafer by the ring fixture, and jointing the ultra-thin wafer with the power contact point of the electroplating bath to start the electroplating process;
s3, after the electroplating, the ring-shaped clamp fixes the ultra-thin wafer and enters the rotary spraying cavity to complete the photoresist removing step;
s4: performing pretreatment processes of seed layer etching and chemical plating, wherein the pretreatment processes comprise surface etching, cleaning, surface metal catalyst layer generation, chemical treatment, organic solvent, acid and alkali, and cleaning by using a vertical spraying device;
s5: the ring-shaped clamp continues to fix the ultrathin wafer to enter a chemical plating bath, and various metallization plating processes are respectively completed;
s6, cleaning and drying the ring-shaped ultra-thin wafer;
s7, separating the ring clamp from the ultra-thin wafer at the output end of the device, and recovering the ring clamp to return the ultra-thin wafer to the wafer box.
2. The integrated process of claim 1, wherein in step S1, the clamp is designed with a connection point to an external power source, and the current is uniformly distributed to the wafer surface through the ring clamp.
3. The integrated process of claim 1, wherein the metallization plating in step S5 comprises Au pd Ni.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011120973.0A CN112259493A (en) | 2020-10-19 | 2020-10-19 | Electroplating and chemical plating integrated process for ultrathin wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011120973.0A CN112259493A (en) | 2020-10-19 | 2020-10-19 | Electroplating and chemical plating integrated process for ultrathin wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112259493A true CN112259493A (en) | 2021-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011120973.0A Pending CN112259493A (en) | 2020-10-19 | 2020-10-19 | Electroplating and chemical plating integrated process for ultrathin wafer |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000003072A1 (en) * | 1998-07-10 | 2000-01-20 | Semitool, Inc. | Method and apparatus for copper plating using electroless plating and electroplating |
| JP2004076072A (en) * | 2002-08-13 | 2004-03-11 | Ebara Corp | Substrate holder, plating apparatus and plating method |
| JP2004169075A (en) * | 2002-11-18 | 2004-06-17 | Ebara Corp | Substrate treatment system |
| JP3979847B2 (en) * | 2000-03-17 | 2007-09-19 | 株式会社荏原製作所 | Plating equipment |
| CN201910414U (en) * | 2010-12-29 | 2011-07-27 | 大河科技有限公司 | Ultrathin wafer moving device |
| TW201211320A (en) * | 2010-09-06 | 2012-03-16 | Grand Plastic Technology Co Ltd | Wafer clamping apparatus with vertical haning arm for plating |
| JP2012107311A (en) * | 2010-10-21 | 2012-06-07 | Ebara Corp | Plating apparatus, plating method, and method for changing posture of substrate holder for plating apparatus |
| US20140245954A1 (en) * | 2013-03-04 | 2014-09-04 | Ebara Corporation | Plating apparatus |
| CN106337198A (en) * | 2015-07-09 | 2017-01-18 | 应用材料公司 | Wafer electroplating chuck assembly |
| JP2017137523A (en) * | 2016-02-01 | 2017-08-10 | アスカコーポレーション株式会社 | Semiconductor wafer |
| US20180282893A1 (en) * | 2017-03-28 | 2018-10-04 | Ebara Corporation | Substrate transporting apparatus, control apparatus for substrate transporting apparatus, displacement compensation method for substrate transporting apparatus, program for implementing method and recording medium that records program |
| JP3218713U (en) * | 2018-08-24 | 2018-11-01 | 深▲せん▼市創智成功科技有限公司 | Conductive ring, power supply device using conductive ring, and electroplating jig using power supply device |
-
2020
- 2020-10-19 CN CN202011120973.0A patent/CN112259493A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000003072A1 (en) * | 1998-07-10 | 2000-01-20 | Semitool, Inc. | Method and apparatus for copper plating using electroless plating and electroplating |
| JP3979847B2 (en) * | 2000-03-17 | 2007-09-19 | 株式会社荏原製作所 | Plating equipment |
| JP2004076072A (en) * | 2002-08-13 | 2004-03-11 | Ebara Corp | Substrate holder, plating apparatus and plating method |
| JP2004169075A (en) * | 2002-11-18 | 2004-06-17 | Ebara Corp | Substrate treatment system |
| TW201211320A (en) * | 2010-09-06 | 2012-03-16 | Grand Plastic Technology Co Ltd | Wafer clamping apparatus with vertical haning arm for plating |
| JP2012107311A (en) * | 2010-10-21 | 2012-06-07 | Ebara Corp | Plating apparatus, plating method, and method for changing posture of substrate holder for plating apparatus |
| CN201910414U (en) * | 2010-12-29 | 2011-07-27 | 大河科技有限公司 | Ultrathin wafer moving device |
| US20140245954A1 (en) * | 2013-03-04 | 2014-09-04 | Ebara Corporation | Plating apparatus |
| CN106337198A (en) * | 2015-07-09 | 2017-01-18 | 应用材料公司 | Wafer electroplating chuck assembly |
| JP2017137523A (en) * | 2016-02-01 | 2017-08-10 | アスカコーポレーション株式会社 | Semiconductor wafer |
| US20180282893A1 (en) * | 2017-03-28 | 2018-10-04 | Ebara Corporation | Substrate transporting apparatus, control apparatus for substrate transporting apparatus, displacement compensation method for substrate transporting apparatus, program for implementing method and recording medium that records program |
| JP3218713U (en) * | 2018-08-24 | 2018-11-01 | 深▲せん▼市創智成功科技有限公司 | Conductive ring, power supply device using conductive ring, and electroplating jig using power supply device |
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