JP3286063B2 - Wafer plating rack and plating method using the same - Google Patents

Wafer plating rack and plating method using the same

Info

Publication number
JP3286063B2
JP3286063B2 JP3614694A JP3614694A JP3286063B2 JP 3286063 B2 JP3286063 B2 JP 3286063B2 JP 3614694 A JP3614694 A JP 3614694A JP 3614694 A JP3614694 A JP 3614694A JP 3286063 B2 JP3286063 B2 JP 3286063B2
Authority
JP
Japan
Prior art keywords
plating
wafer
rack
holding
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3614694A
Other languages
Japanese (ja)
Other versions
JPH07243097A (en
Inventor
和広 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electroplating Engineers of Japan Ltd
Original Assignee
Electroplating Engineers of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electroplating Engineers of Japan Ltd filed Critical Electroplating Engineers of Japan Ltd
Priority to JP3614694A priority Critical patent/JP3286063B2/en
Publication of JPH07243097A publication Critical patent/JPH07243097A/en
Application granted granted Critical
Publication of JP3286063B2 publication Critical patent/JP3286063B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体用のウエーハに
めっきを施すための技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for plating a semiconductor wafer.

【0002】[0002]

【従来の技術】ウエーハにバンプめっきなどのめっき処
理を施すについてはそのめっき対象面だけを選択的にめ
っき液に接触させるようにすることが重要な要素になっ
ている。そのため従来では一般に図5に示すような基本
構造を持つめっきシステムが用いられている。このシス
テムは、めっき槽20の中にウエーハWの支持手段でも
あるカップ状の噴射槽21を設け、この噴射槽21の上
端にウエーハWをそのめっき対象面が下側になる状態で
被せるようにして固定し、この状態で噴射槽21内にめ
っき液を加熱槽22から循環管路23を介して噴射状で
供給するようにしており、噴射槽21に供給されためっ
き液Mは、ウエーハWのめっき対象面に接触しつつ周辺
へ広がる流れを形成してめっき槽20に流れ出して行く
(例えば実公昭58−8774号公報、実開平3−19
70号公報、実開平4−44371号公報等を参照)。
2. Description of the Related Art When plating a wafer, such as bump plating, it is an important factor to selectively bring only the surface to be plated into contact with a plating solution. Therefore, conventionally, a plating system having a basic structure as shown in FIG. 5 is generally used. In this system, a cup-shaped jet tank 21 which is also a support means for a wafer W is provided in a plating tank 20, and the upper end of the jet tank 21 is covered with the wafer W with its surface to be plated facing down. In this state, the plating solution is supplied into the spray tank 21 from the heating tank 22 through the circulation pipe 23 in a spray form. The plating solution M supplied to the spray tank 21 is supplied to the wafer W A flow spreading to the periphery while contacting the surface to be plated is formed and flows out to the plating tank 20 (for example, Japanese Utility Model Publication No. 58-8774, Japanese Utility Model Application Laid-Open No. 3-19).
No. 70, Japanese Utility Model Laid-Open No. 4-44371, etc.).

【0003】これから分かるように、従来のシステムで
は、1個の噴射槽について1枚ずつしかウエーハを処理
することができない。このことは、処理効率上の問題、
特にウエーハ1枚につき使用するめっき液の量が多くな
るという問題をもたらし、また大量のウエーハを効率的
に処理するために多数の噴射槽を横方向に並べて設けな
ければならず、そのために装置全体が大型化するという
問題ももたらしている。
[0003] As can be seen, in the conventional system, only one wafer can be processed per injection tank. This is a processing efficiency issue,
In particular, there is a problem that a large amount of plating solution is used per wafer, and a large number of spray tanks must be provided in a horizontal direction in order to efficiently process a large amount of wafers. However, there is also a problem that the size of the device increases.

【0004】また従来のシステムでは、噴射槽内にめっ
き液を噴射供給する必要があるので、めっき槽やめっき
液供給機構などの装置要素が複雑になり、このことが、
装置全体の大型化の他の要因ともなると共に、装置の固
定的な配置を要求する所以となって工場スペースの効率
的利用を妨げることになっていた。
Further, in the conventional system, since it is necessary to jet and supply a plating solution into an injection tank, equipment elements such as a plating tank and a plating solution supply mechanism become complicated.
This is another factor in increasing the size of the entire apparatus, and also requires a fixed arrangement of the apparatus, which hinders efficient use of the factory space.

【0005】[0005]

【発明が解決しようとする課題】従って本発明の目的
は、2枚のウエーハを1個の支持手段、具体的にはラッ
クで支持させて処理できるようにすることで、ウエーハ
1枚当たりのめっき液の使用量の節減や装置全体の小型
化、さらにはめっき槽やめっき液供給機構などの装置要
素の簡易化を図れるようにすることにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to enable two wafers to be processed while being supported by one supporting means, specifically, a rack, so that plating per wafer can be performed. It is an object of the present invention to reduce the amount of solution used, reduce the size of the entire apparatus, and simplify the apparatus elements such as a plating tank and a plating solution supply mechanism.

【0006】[0006]

【課題を解決するための手段】このような目的のため
に、本発明では、それぞれ内周面に2本の保持溝が形成
された半環状の枠部材を互いの一端で回動可能に組み合
わせて、保持対象のウエーハの外周に相似な環状に形成
した枠体を有し、この枠体における両枠部材の保持溝が
組み合わさって形成される環状の保持溝にそれぞれの周
縁部を嵌合させることで2枚一組のウエーハをそれぞれ
のめっき対象面が表側になる背中合わせにして保持させ
るようにした構造のめっき用ラックを用いるものとして
おり、2枚一組のウエーハを保持させたこのめっき用ラ
ックをめっき槽内のめっき液に浸漬させ、この浸漬状態
で表側の各ウエーハのめっき対象面にめっき液を流動的
に接触させてめっきを施すようにしている。
For this purpose, according to the present invention, semi-annular frame members each having two holding grooves formed on the inner peripheral surface thereof are rotatably combined at one end with each other. A frame that is formed in an annular shape similar to the outer periphery of the wafer to be held, and each peripheral edge is fitted into an annular holding groove formed by combining the holding grooves of both frame members in this frame. In this case, a plating rack having a structure in which a pair of wafers is held back to back with the respective surfaces to be plated facing each other is used, and this plating holding a pair of wafers is used. The rack is immersed in a plating solution in a plating tank, and in this immersion state, the plating solution is brought into fluid contact with the plating target surface of each wafer on the front side to perform plating.

【0007】このような本発明によると、一個のラック
で2枚のウエーハを同時に処理できるので、ウエーハ1
枚当たりのめっき液の使用量を大幅に節減できるし、ま
た処理能力当たりの装置サイズを小さくできる。
According to the present invention, since two wafers can be processed simultaneously by one rack, the wafer 1
The amount of plating solution used per sheet can be greatly reduced, and the size of the apparatus per processing capacity can be reduced.

【0008】また本発明によると、めっき用ラックをめ
っき槽内のめっき液に浸漬させた状態でめっき液をウエ
ーハに接触させるようにしているので、従来のようなめ
っき液の噴射供給を行なう必要がなく、従ってめっき槽
やめっき液供給機構などの装置要素の大幅な簡易化を図
ることができる。
Further, according to the present invention, the plating solution is brought into contact with the wafer while the plating rack is immersed in the plating solution in the plating tank. Therefore, it is possible to greatly simplify equipment elements such as a plating tank and a plating solution supply mechanism.

【0009】このめっき液の噴射供給を行なわずにウエ
ーハに対するめっき液の流動状態を与える点について
は、めっき槽内でめっき液を攪拌する方法も可能である
が、めっき用ラックをめっき液中で回転させる方法が、
めっき対象面におけるめっき液の流動分布についてより
高い均一性が得られるという点で、より好ましい。
In order to impart a flowing state of the plating solution to the wafer without spraying and supplying the plating solution, a method of stirring the plating solution in a plating tank is also possible. How to rotate,
It is more preferable that higher uniformity of the flow distribution of the plating solution on the plating target surface can be obtained.

【0010】また本発明では、上記のようなめっき用ラ
ックについて、保持溝の内側壁に電極端子の先端部を突
出させて設け、保持溝にウエーハの周縁部を嵌合させる
際にこの電極端子の先端部で対応部位のレジスト膜を削
り取ってウエーハへの通電を行なえるようにしている。
これはその周縁部を保持溝に嵌合させてウエーハの保持
をなすという構造を活用したもので、この結果、安定的
なめっき処理に不可欠であり従来でも様々な工夫を要求
されていたウエーハに対するカソードの通電を簡単且つ
確実に確保することができる。
According to the present invention, in the plating rack as described above, the tip of the electrode terminal is provided so as to protrude from the inner side wall of the holding groove, and when the peripheral portion of the wafer is fitted into the holding groove, the electrode terminal is provided. The resist film at the corresponding portion is scraped off at the tip of the wafer so that power can be supplied to the wafer.
This utilizes the structure of holding the wafer by fitting its peripheral edge to the holding groove, and as a result, it is indispensable for stable plating treatment and for wafers that have been required various devices in the past. Energization of the cathode can be easily and reliably ensured.

【0011】[0011]

【実施例】以下、本発明の一実施例について説明する。
図1及び図2に示すように、本実施例によるめっき用ラ
ック1は、保持対象のウエーハWの外周に相似な円環状
に形成された枠体2に回転力伝達部3を接続してなって
いる。
An embodiment of the present invention will be described below.
As shown in FIGS. 1 and 2, a plating rack 1 according to the present embodiment is configured such that a rotational force transmitting unit 3 is connected to a frame 2 formed in an annular shape similar to the outer periphery of a wafer W to be held. ing.

【0012】枠体2は、それぞれ内周面に2本の保持溝
4、4を有する一対の半円環状の枠部材5、5を互いの
一端で回動可能に接続して形成されており、ウエーハW
の装着・取出しのために図中に想像線で示すように回動
させて開くことができるようにされている。また各枠部
材5の保持溝4、4の内側壁には図3に示すようにカソ
ード用の電極端子6の先端部が弾性的に出没可能となる
ようにして僅かに突出させられている。
The frame 2 is formed by connecting a pair of semi-annular frame members 5 and 5 having two holding grooves 4 and 4 on the inner peripheral surface thereof at one end thereof so as to be rotatable. , Wafer W
In order to mount and take out the camera, the camera can be rotated and opened as shown by imaginary lines in the figure. As shown in FIG. 3, the tip of the electrode terminal 6 for the cathode is slightly protruded from the inner wall of the holding groove 4, 4 of each frame member 5 so that the tip can be elastically protruded and retracted.

【0013】このめっき用ラック1にウエーハWを保持
させるには、先ず両枠部材5、5を上述のように開き、
そこで両枠部材5、5の間にウエーハW、Wを互いにめ
っき対象面が外側になる背中合わせにして挟んでから両
枠部材5、5を閉じる。すると各ウエーハWは、両枠部
材5、5の保持溝4、4にそれぞれの周縁部を全周にわ
たって嵌合させた状態で枠体2に保持される。この際
に、ウエーハWの周縁部は電極端子6の先端部を保持溝
4の内側壁内に押し込むようにして擦り、この結果そこ
に施されているレジスト膜が電極端子6の先端部で削り
取られ、電極端子6とウエーハWとの導通状態が得られ
る。
In order to hold the wafer W on the plating rack 1, first, the two frame members 5, 5 are opened as described above.
Therefore, the wafers W, W are sandwiched between the frame members 5, 5 with the surfaces to be plated facing each other back to back, and then the frame members 5, 5 are closed. Then, each wafer W is held by the frame 2 in a state where the respective peripheral edges are fitted to the holding grooves 4 and 4 of both the frame members 5 and 5 over the entire circumference. At this time, the peripheral edge of the wafer W is rubbed so that the tip of the electrode terminal 6 is pushed into the inner wall of the holding groove 4, and as a result, the resist film applied thereon is scraped off at the tip of the electrode terminal 6. Thus, a conduction state between the electrode terminal 6 and the wafer W is obtained.

【0014】このようにして保持された両ウエーハW、
Wの裏側はめっき液に対し完全な密封状態になり、ラッ
ク1を図4に示すようにめっき槽7内のめっき液Mに漬
けた場合に両ウエーハW、Wの表側面、つまりめっき対
象面だけを選択的にめっき液Mに接触させることができ
る。
The two wafers W thus held are
The back side of W is completely sealed with the plating solution, and when the rack 1 is immersed in the plating solution M in the plating tank 7 as shown in FIG. Alone can be selectively brought into contact with the plating solution M.

【0015】このようなめっき用ラック1を用いてのめ
っき処理は、図4に示すようにめっき用ラック1をめっ
き槽7内のめっき液Mに漬けた状態で静かに回転させつ
つ進める。めっき用ラック1を回転させるには回転力伝
達部3を介して図外の駆動系から回転力を伝えることに
なるが、その機構は一般に知られている機構を用いるこ
とができるので、その説明及び図示は省略する。
As shown in FIG. 4, the plating using the plating rack 1 proceeds while the plating rack 1 is immersed in the plating solution M in the plating tank 7 and gently rotated. In order to rotate the plating rack 1, a rotational force is transmitted from a drive system (not shown) via a rotational force transmitting unit 3, but a generally known mechanism can be used. And illustration is omitted.

【0016】一般にめっき液Mは加熱する必要がある
が、この例ではホットバス方式による間接加熱を用いて
いる。即ち、加熱用の液体Lを満たしたホットバス8内
にめっき槽7を漬けてめっき槽7内のめっき液Mを加熱
するようにしている。
Generally, the plating solution M needs to be heated, but in this example, indirect heating by a hot bath method is used. That is, the plating bath 7 is immersed in a hot bath 8 filled with the heating liquid L to heat the plating solution M in the plating bath 7.

【0017】[0017]

【発明の効果】以上説明したごとく本発明によると、一
個のラックで2枚のウエーハを同時に処理できるので、
ウエーハ1枚当たりのめっき液の使用量を大幅に節減で
き、また処理能力当たりの装置サイズを小さくできる
し、さらに従来のようなめっき液の噴射的供給を行なう
必要がないので、めっき槽やめっき液供給機構などの装
置要素の大幅な簡易化を図ることができる。
As described above, according to the present invention, two wafers can be processed simultaneously by one rack.
The amount of plating solution used per wafer can be greatly reduced, the size of the equipment per processing capacity can be reduced, and there is no need to supply the plating solution by jetting as in the past. The device elements such as the liquid supply mechanism can be greatly simplified.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明によるめっき用ラックの側面図。FIG. 1 is a side view of a plating rack according to the present invention.

【図2】図1中のSA2 ─SA2 線に沿う断面図。FIG. 2 is a sectional view taken along the line SA 2 ─SA 2 in FIG. 1;

【図3】枠部材の保持溝への電極端子の組込み状態を示
す断面図。
FIG. 3 is a cross-sectional view showing a state in which electrode terminals are assembled into holding grooves of a frame member.

【図4】図1のめっき用ラックを用いためっき処理の状
態を示す断面図。
FIG. 4 is a sectional view showing a state of a plating process using the plating rack of FIG. 1;

【図5】従来のめっき処理システムの構成図。FIG. 5 is a configuration diagram of a conventional plating system.

【符号の説明】[Explanation of symbols]

1 めっき用ラック 2 枠体 3 回転力伝達部 4 保持溝 5 枠部材 6 電極端子 7 めっき槽 M めっき液 W ウエーハ DESCRIPTION OF SYMBOLS 1 Plating rack 2 Frame 3 Rotational force transmitting part 4 Holding groove 5 Frame member 6 Electrode terminal 7 Plating tank M Plating solution W Wafer

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C25D 17/08 C25D 5/02 C25D 5/08 C25D 7/12 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C25D 17/08 C25D 5/02 C25D 5/08 C25D 7/12

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 めっき液にめっき対象面を選択的に接触
させる状態でウエーハを保持するウエーハのめっき用ラ
ックにおいて、それぞれ内周面に2本の保持溝が形成さ
れた半環状の枠部材を互いの一端で回動可能に組み合わ
せて保持対象のウエーハの外周に相似な環状に形成した
枠体を有し、この枠体における両枠部材の各保持溝にそ
れぞれの周縁部を嵌合させることで2枚一組のウエーハ
をそれぞれのめっき対象面が表側になる背中合わせにし
て保持させるようにしたことを特徴とするウエーハのめ
っき用ラック。
1. A semi-annular frame member having two holding grooves formed on an inner peripheral surface thereof in a wafer plating rack for holding a wafer in a state where a surface to be plated is selectively brought into contact with a plating solution. It has a frame formed in an annular shape similar to the outer periphery of the wafer to be held by being rotatably combined at one end of each other, and fitting the respective peripheral edges to the holding grooves of both frame members in the frame. A pair of wafers being held back-to-back with the surfaces to be plated facing each other.
【請求項2】 保持溝の内側壁に電極端子の先端部を突
出させて設け、保持溝にウエーハの周縁部を嵌合させる
際にこの電極端子の先端部で対応部位のレジストを削り
取ってウエーハへの通電を行なえるようにした請求項1
記載のめっき用ラック。
2. A tip of an electrode terminal is provided on an inner side wall of a holding groove so as to protrude, and when a peripheral edge of a wafer is fitted into the holding groove, a resist of a corresponding portion is scraped off at the tip of the electrode terminal to form a wafer. Claim 1 wherein electricity can be supplied to
The plating rack as described.
【請求項3】 請求項1又は請求項2記載のめっき用ラ
ックを用いてウエーハにめっきを施すめっき方法であっ
て、2枚一組のウエーハを保持させためっき用ラックを
めっき槽内のめっき液に浸漬させ、この浸漬状態で各ウ
エーハのめっき対象面にめっき液を流動的に接触させて
めっきを施すようにしてなるめっき方法。
3. A plating method for plating a wafer using the plating rack according to claim 1 or 2, wherein the plating rack holding a pair of wafers is plated in a plating tank. A plating method in which a plating solution is immersed in a solution and a plating solution is fluidly brought into contact with a surface to be plated of each wafer in this immersion state to perform plating.
【請求項4】 めっき用ラックを回転させることにより
ウエーハに対するめっき液の流動状態を与えるようにし
た請求項3記載のめっき方法。
4. The plating method according to claim 3, wherein the plating rack is rotated to give a flowing state of the plating solution to the wafer.
JP3614694A 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same Expired - Fee Related JP3286063B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3614694A JP3286063B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3614694A JP3286063B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Publications (2)

Publication Number Publication Date
JPH07243097A JPH07243097A (en) 1995-09-19
JP3286063B2 true JP3286063B2 (en) 2002-05-27

Family

ID=12461660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3614694A Expired - Fee Related JP3286063B2 (en) 1994-03-07 1994-03-07 Wafer plating rack and plating method using the same

Country Status (1)

Country Link
JP (1) JP3286063B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6369544B2 (en) * 2014-06-27 2018-08-08 株式会社村田製作所 Plating equipment
JP6746185B2 (en) * 2016-02-01 2020-08-26 アスカコーポレーション株式会社 Jig for semiconductor wafer plating

Also Published As

Publication number Publication date
JPH07243097A (en) 1995-09-19

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