KR20100077447A - Wafer plating apparatus - Google Patents

Abstract

PURPOSE: A device for plating a substrate is provided to make the front surface of a substrate into cathode evenly by individually applying cathode to the circumference and center of a substrate. CONSTITUTION: A device for plating a substrate comprises a plating chamber(10), a chucking part(20), a target part(30) and cathode part(40). An electrolyte is accepted in the plating chamber. The chucking part selectively dips a substrate in electrolyte. The target part is dipped in electrolyte. Anode is applied in the target part. Cathode is connected to the circumference and the center of a substrate which becomes cathode.

Description

Substrate Plating Equipment {WAFER PLATING APPARATUS}

The present invention relates to a substrate plating apparatus, and more particularly to a substrate plating apparatus capable of forming a plated film of uniform thickness.

In general, in order to form a metal wiring on a silicon substrate constituting a semiconductor, a metal film is formed on the entire surface of the substrate to pattern the metal film. At this time, the metal film formed on the entire surface of the substrate is formed of aluminum or copper. Among these, the copper film has a melting point higher than that of the aluminum film and has a large resistance to electric mobility, thereby improving the reliability of the semiconductor device. In addition, the substrate on which the copper film is formed has an advantage of low signal resistance and an increase in signal transmission speed. Therefore, as for the metal film formed on the said board | substrate, a copper film is generally mainly adopted instead of an aluminum film.

Currently, as a method for forming and patterning a copper film on the substrate, physical vapor deposition or chemical vapor deposition is mainly employed, but chemical vapor deposition, that is, electrical resistance due to its excellent resistance to electrical mobility and low manufacturing cost, Plating is preferred.

The principle of copper electroplating for the substrate is that the copper ions are separated from the copper plate by immersing the anode copper plate and the cathode substrate onto the electrolytic solution of the processing chamber and then applying a current to form a copper film on the substrate.

On the other hand, in the case of the substrate plating apparatus according to the copper electroplating method as described above, in order to apply the cathode to the substrate, the cathode applying body is provided to support the outer periphery of the substrate. Therefore, the cathode of the substrate is concentrated on the outer peripheral portion of the substrate, thereby causing a problem that the plating of the substrate is uneven. That is, the thickness of the plated film formed on the substrate does not distribute evenly on the entire surface of the substrate is caused.

The present invention has been made in view of the above problems, to provide a substrate plating apparatus that can evenly plate the entire surface of the substrate.

Another object of the present invention is to provide a substrate plating apparatus capable of simultaneously cathodeifying different points of a substrate by being supplied from one cathode source.

It includes a substrate plating apparatus, a plating chamber, a chucking portion, a target portion and a cathode portion for achieving the above object.

In the plating chamber according to the present invention, the electrolyte is accommodated, and the chucking part supports the substrate to be selectively immersed in the electrolyte. The target part is immersed in the electrolyte and an anode is applied, thereby generating metal ions in the electrolyte.

The cathode portion, which is a feature of the present invention, contacts the outer periphery and the center of the substrate to make the substrate cathode. The cathode part includes a first cathodic applying body that surrounds and supports the outer circumference of the substrate, and a second cathodic applying body in point contact with the center of the substrate, wherein the first and second cathodic applying bodies are connected between the first and second cathodic applying bodies. Interconnected by Here, it is preferable that the connection wire is at least two or more, and the cathode part is preferably supported by the chucking part.

According to another aspect of the present invention, a substrate plating apparatus includes a plating chamber containing an electrolyte solution, a chucking part for selectively immersing and rotating a substrate in the electrolyte solution, a target part immersed in the electrolyte solution, and an anode applied thereto; And a cathode part in contact with the substrate at a plurality of points to apply a cathode to the substrate. Here, the negative electrode portion is a first negative electrode applying body in contact with the outer periphery of the substrate to apply a negative electrode, a second negative electrode applying body in point contact with the center of the substrate to apply a negative electrode, and the first and second cathode Connecting wires interconnecting the sieves.

According to the present invention having the above-described configuration, the cathode can be applied separately to the outer periphery and the center of the substrate, so that the entire surface of the substrate can be cathodeed evenly. Therefore, the plating film which has a uniform thickness can be formed in a board | substrate, and the plating efficiency of a board | substrate improves.

In addition, the first negative electrode applying body in contact with the outer periphery of the substrate and the second negative electrode applying body in contact with the center of the substrate can be connected through a connection wire, so that the cathodes are simultaneously supplied from one cathode supply source to different points on the substrate. Can be cathodic simultaneously. That is, the cathode efficiency of a board | substrate improves.

Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

Referring to FIG. 1, the substrate plating apparatus 1 according to the present invention includes a plating chamber 10, a chucking unit 20, a target unit 30, a cathode unit 40, and the like.

The plating chamber 10 is a chamber that provides a space in which the electrolyte S is accommodated. The plating chamber 10 has a bath (bath) shape that is provided with an entrance 11 opened at the top for access of the substrate (W) to be described later. However, the present invention is not necessarily limited thereto, and as the upper portion of the plating chamber 10 is selectively opened by a cover (not shown) or one side is opened, the electrolyte W is accommodated, and the substrate W is provided. Of course, any one of a variety of shapes that can be selectively entered) can be employed.

In addition, the board | substrate W demonstrated by this invention is illustrated with the semiconductor substrate immersed and plated in electrolyte solution S of the said plating chamber 10. FIG. However, the present invention is not necessarily limited thereto, and the substrate W may be a glass substrate for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP).

The chucking unit 20 chucks the substrate W and enters into and out of the plating chamber 10, as shown in FIGS. 1 and 2. In addition, the chucking unit 20 rotates the substrate W when chucking is performed and plating of the substrate W immersed in the electrolyte S is performed. The chucking unit 20 includes a chuck member 21 supporting the rear surface of the substrate W and a rotation shaft 22 of the chuck member 21. In this case, the rear surface of the substrate W supported by the chuck member 21 is a surface opposite to the front surface facing the electrolyte S.

On the other hand, the chuck member 21 to chuck the substrate (W) by any one of a variety of chucking means such as pneumatic or electromagnetic force to the back of the substrate (W) to suppress the flow of the substrate (W). Since the technical configuration of the chuck member 21 can be understood from a known technique, detailed description and illustration are omitted. In addition, the driving unit (not shown) for driving the chucking unit 20 as described above is connected to the chucking unit 20 to transmit a driving force. However, since it is a well-known technology, a detailed description thereof will be omitted. .

The target portion 30 is immersed in the electrolyte S of the plating chamber 10 and applied to the anode, thereby generating metal ions onto the electrolyte S by an oxidation reaction. The target portion 30 includes a target plate 31 for providing metal ions and a positive electrode applying body 32 for cathodicizing the target plate 31.

For reference, in the present exemplary embodiment, the metal film formed by being plated on the substrate W immersed in the electrolyte S is a copper film. Therefore, the target plate 31 is exemplified as a copper plate for providing copper ions to the substrate W. Correspondingly, the electrolyte S as a transfer medium of the metal ions is exemplified as copper sulfate.

In addition, the target portion 30 includes a target chamber 33 immersed in the electrolyte S of the plating chamber 10 to support the outer circumferential surface of the target plate 31. The target chamber 33 is formed in a cylinder with an open upper portion, and is provided in a state in which the outer circumference of the target plate 31 is supported. Inside the target chamber 33, first and second filters 34 and 36, which are sequentially positioned on the target plate 31, are installed, and the first and second filters 34 and 36 are provided. The outer circumference of the is supported on the inner peripheral surface of the target chamber (33).

Here, the first filter 34 has a funnel shape and is installed between the target plate 31 and the second filter 36 to rotate about the axis 35. In addition, as illustrated in FIG. 2, the second filter 36 is provided at an open upper portion of the target chamber 33 so as to face the entire surface of the substrate W immersed in the electrolyte S. By this configuration, the metal ions separated from the target plate 31 are primarily filtered in a state in which the metal ions are evenly spread over the electrolyte S by the rotation of the first filter 34, and the second filter 36. Is evenly distributed on the front surface of the substrate W while filtering the first filtered metal ions.

The cathode part 40 cathodes the substrate W chucked by the chucking part 20. More specifically, the cathode part 40 is in direct contact with the outer circumference of the substrate W supported by the chucking part 20 and the center of the substrate W, so as to make the substrate W negative. To this end, the cathode part 40 includes the first and second cathode applying bodies 41 and 42, as shown in FIG. 3, to uniformly cathode the entire surface of the substrate (W).

As shown in FIG. 3, the first cathode applying body 41 is provided to be in contact with the outer periphery of the substrate W. Therefore, the first negative electrode applying body 41 receives the negative electrode from the power supply means (not shown) and applies the negative electrode to the outer circumference of the contacted substrate W, thereby making the substrate W negative.

The second negative electrode applying body 42 is provided to be in contact with an approximately center of the substrate W. In this case, the second negative electrode applying body 42 is formed to be in point contact with the center of the substrate (W), the contact area is so minute that it does not affect the plated film of the substrate (W). Therefore, the first negative electrode applying body 41 is in contact with the outer circumference of the substrate W to apply a negative electrode, and the negative electrode applied from the first negative electrode applying body 41 is relatively lower than the outer circumference. In the center of (W), the second cathode applying body 42 can apply the cathode separately. In other words, the first and second cathodic applying bodies 41 and 42 respectively cathodate different points of the substrate W so as to uniformly cathode the entire surface of the substrate W. FIG.

On the other hand, the second negative electrode applying body 42 is electrically connected to the first negative electrode applying body 41 through a connection wire 43. Like the second cathodic applying body 42, the connection wire 43 has a width so small that the substrate W does not affect the plating. As a result, the cathodes supplied from one cathode source not shown can be simultaneously cathodeed at different points of the substrate W, so that the cathodeing efficiency is improved.

Here, the number of the connecting wire 43 is preferably at least two or more so that the second negative electrode applying body 42 can be connected in a stable state with respect to the first negative electrode applying body 41. In the present embodiment, as illustrated in FIG. 3, three connecting wires 43 are provided between the first negative electrode applying body 41 and the second negative electrode applying body 42.

The plating operation of the substrate plating apparatus 1 according to the present invention having the configuration as described above will be described with reference to FIGS.

As illustrated in FIG. 1, when the substrate W is chucked to the chuck member 21 from the outside of the plating chamber 10, the chuck member 21 moves in the direction of the rotation shaft 22 in the direction of the arrow shown in FIG. 2. Descends. Then, the substrate W enters the plating chamber 10 while being chucked by the chuck member 21 and is immersed in the electrolyte S.

As illustrated in FIG. 2, when the substrate W is immersed in the electrolyte S, the chucking unit 20 supporting the substrate W is rotated about the rotation shaft 22. In addition, a cathode is applied to the substrate W by the first and second cathode applying bodies 41 and 42, and the target plate 31 immersed in the electrolyte S of the plating chamber 10. The positive electrode is applied by the contact with the positive electrode applying body 32.

Herein, the application of the cathode of the substrate W will be described in more detail. As shown in FIG. 3, the first cathode applying body 41 is brought into contact with the outer circumference of the substrate W while being supported. The substrate W is cathodeed by the first cathode applying body 41. At the same time, the second negative electrode applying body 42, which is energized by the first negative electrode applying body 41 and the connecting wire 43, is in point contact with the center of the substrate W, whereby the center of the substrate W is located. Is also cathodic. Therefore, the cathode is simultaneously applied to the outer periphery and the center of the substrate W, so that the entire surface of the substrate W is uniformly cathodeed.

The metal ions separated by the oxidation reaction from the anodized target plate 31 are supplied through the first and second filters 34 and 36 to the substrate W on which the front surface is uniformly cathode, thereby applying the cathode. By the reduction reaction, a plated film having a uniform thickness is formed on the entire surface of the substrate W. In this case, the substrate W is rotatably supported by the chuck member 21, so that metal ions can be more evenly spread on the entire surface of the substrate W without interfering with the connection wire 43.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a schematic view showing a substrate plating apparatus according to the present invention;

2 is a configuration diagram schematically showing a state in which a substrate is immersed in an electrolyte solution, and

3 is a configuration diagram schematically illustrating a state in which a substrate is in contact with a cathode part.

<Description of the symbols for the main parts of the drawings>

1: Substrate Plating Apparatus 10: Plating Chamber

20: chucking portion 30: target portion

40: cathode 41: first cathode applying body

42: second cathodic body 43: connection wire

Claims (7)

Plating chamber in which the electrolyte is accommodated; A chucking unit supporting the substrate to selectively immerse the substrate in the electrolyte; A target part immersed in the electrolyte and to which an anode is applied; And A cathode part in contact with an outer circumference and a center of the substrate to cathode the substrate; Substrate plating apparatus comprising a. The method of claim 1, The cathode portion, A first cathodic applying body surrounding the outer circumference of the substrate; And A second cathodic applying body in point contact with the center of the substrate; Substrate plating apparatus comprising a. The method of claim 2, Substrate plating apparatus comprising a connecting wire for connecting between the first negative electrode applying body and the second negative electrode applying body. The method of claim 3, wherein Substrate plating apparatus, characterized in that at least two connection wires. The method according to any one of claims 1 to 4, The cathode portion, Substrate plating apparatus, characterized in that supported by the chucking unit. A plating chamber containing an electrolyte solution; Selectively immersing the substrate in the electrolyte and rotating the chucking unit; A target part immersed in the electrolyte and to which an anode is applied; And A cathode part in contact with the substrate at a plurality of points to apply a cathode to the substrate; Substrate plating apparatus comprising a. The method of claim 6, The cathode portion, A first cathodic applying body contacting the outer circumference of the substrate to apply a cathode; A second cathodic applying body which is in point contact with the center of the substrate to apply a cathode; And Connecting wires interconnecting the first and second cathodic applying bodies; Substrate plating apparatus comprising a.

Images