KR20110067277A - Wafer plating apparatus - Google Patents

Abstract

PURPOSE: A wafer plating apparatus is provided to improve the filtration and distribution efficiency of metallic ion by including a filter filtering the metallic ions which is transferred by a vortex. CONSTITUTION: A reaction chamber(10) receives an electrolyte. A target(12) is dipped in the electrolyte and generates metallic ion when receiving a positive electrode. A plurality of swirl holes(22) through which the electrolyte is passed are formed on the target. A rotating unit(30) rotates a target. A filter(40) filters the metallic ion which is carried by vortex.

Description

Substrate Plating Equipment {WAFER PLATING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing, and more particularly, to a substrate plating apparatus capable of ensuring uniformity during substrate plating for metallization.

In general, in order to form a metal wiring on a silicon substrate constituting a semiconductor, a metal film is formed on the entire surface of the substrate to pattern the metal film. At this time, the metal film formed on the entire surface of the substrate is formed of aluminum or copper. Among these, the copper film has a higher melting point than the aluminum film, and thus has a large resistance to electrical mobility, and thus is mainly adopted because of the advantage that the reliability of the semiconductor device can be improved and the specific resistance is low to increase the signal transmission speed. do.

Currently, physical vapor deposition or chemical vapor deposition is mainly employed as a method for forming copper wiring on the substrate, but chemical vapor deposition, which is excellent in resistance to electrical mobility and low in manufacturing cost, is preferred. .

The principle of copper electroplating for the substrate is that the copper ions separated from the copper plate by the oxidation / reduction reaction are transferred to the substrate by immersing the copper plate of the anode and the substrate of the cathode in the processing chamber in which the electrolyte is contained. .

However, a phenomenon in which copper ions separated from the copper plate and melted into the electrolyte solution is inhibited from moving to the substrate due to specific gravity. For this reason, as the copper ions move in a non-uniform state on the electrolyte solution, uneven plating defects of the plating surface of the substrate are caused.

The present invention has been made in view of the above problems, and is to provide a substrate plating apparatus capable of securing substrate plating uniformity by improving the transfer efficiency of metal ions.

The substrate plating apparatus according to the present invention for achieving the above object includes a processing chamber, a target body, and a rotating part.

According to a preferred embodiment of the present invention, the treatment chamber, the electrolyte is accommodated, the substrate to which the negative electrode (-) is selectively immersed.

The target body is immersed in the electrolyte to generate metal ions upon application of the positive electrode (+). Here, the target body has a plurality of vortex holes penetrated to pass through the electrolyte, thereby forming a vortex when rotating. More specifically, the target body is preferably spaced apart from the bottom surface of the processing chamber and connected to the rotating part. In addition, the bottom surface of the target body is provided with a contact between the positive electrode portion to which the anode is applied, the positive electrode portion may be provided with a plurality of communication holes corresponding to the vortex hole.

The rotating part rotates the target body.

In addition, according to a preferred embodiment of the present invention, it is preferable to include a filter provided between the substrate and the target body to filter and uniformly distribute the metal ions on the electrolyte to the substrate.

According to another aspect of the present invention, there is provided a substrate plating apparatus including a process chamber in which an electrolyte is accommodated and a substrate to which a cathode (-) is applied is selectively immersed, and immersed in the electrolyte solution of the process chamber so as to face the substrate. A target body which generates metal ions upon application and is in contact with the inner surface of the processing chamber, and which has a plurality of vortex holes penetrated in the radial direction to allow the electrolyte to pass therethrough, and a rotating part for rotating the target body. .

According to the present invention having the above-described configuration, it is possible to form a vortex between the substrate and the target body by rotating the target body having a plurality of vortex holes through which the electrolyte can pass. Therefore, the metal ions can be uniformly moved toward the substrate, whereby the plating uniformity can be improved.

In addition, by providing a filter for filtering the metal ions moved by the vortex, it is possible to further improve the filtration efficiency and distribution efficiency of the metal ions.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2, a substrate plating apparatus 1 according to a preferred embodiment of the present invention includes a processing chamber 10, a target body 20, a rotating unit 30, and a filter 40. .

The processing chamber 10 is accommodated with the electrolyte (S), the substrate (W) is provided with an outlet 11 to enter and exit the substrate (W) selectively immersed. Although not shown in detail, the processing chamber 10 receives an electrolyte solution from an electrolyte supply source. Here, an open outlet 11 is provided at an upper portion of the treatment chamber 10, and the bottom surface 12 has a circular bath shape. However, the present invention is not necessarily limited thereto. For example, an upper portion of the processing chamber 10 may be selectively opened by a cover or one side may be opened to accommodate an electrolyte S having a capacity in which the substrate W may be immersed. In addition, it is obvious that any one of various shapes in which the substrate W may be selectively moved in and out may be employed.

For reference, the back surface of the substrate W entering and exiting the process chamber 10 is supported by the chuck 13, and is provided between the substrate W and the chuck 13 to apply a current to the negative electrode part 14. Is applied to the cathode. The substrate W is exemplified as a silicon wafer to be a semiconductor substrate, but is not necessarily limited thereto. That is, the substrate W may be a glass substrate for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP).

The target body 20 is a metal plate which is immersed in the electrolyte (S) and connected to the positive electrode unit 21 to generate metal ions by an oxidation reaction when an anode is applied. In the present embodiment, the target body 20 is exemplified as including a copper plate for generating metal ions. In addition, the electrolyte (S), which is an ion conductive medium that transfers the metal ions separated from the target body 20 to the substrate W, is illustrated as a copper sulfate solution.

In addition, the target body 20 is provided with a circular plate corresponding to the bottom surface 12 of the processing chamber 10, as shown in Figure 3, a plurality of vortex holes 22 are formed therethrough . The vortex hole 22 is formed to penetrate in the thickness direction of the target body 20. For reference, the diameter and number of the vortex holes 22 are not limited to the illustrated example.

On the other hand, the target body 20 is provided to be spaced apart from the bottom surface 12 of the processing chamber 10 is provided so that the electrolyte solution (S) passes through the vortex hole (22). In addition, the positive electrode part 21 which contacts the target body 20 and applies the positive electrode (+), is in contact with the bottom surface of the target body 20 facing the bottom surface 12 of the processing chamber 10. Is installed. At this time, the positive electrode portion 21 has a circular plate and a communication hole 21a corresponding to the vortex hole 22 corresponding to the shape of the target body 20, so that the electrolyte S is a vortex hole. Through 22 it is possible to enter and exit the target body 20.

The rotating unit 30 rotates the target body 20. To this end, the rotation unit 30 includes a rotation shaft 31 supporting the center of the target body 20, and a drive source 32 connected to the rotation shaft 31 to provide a rotational force. At this time, the rotating shaft 31 supports the target body 20 spaced apart from the bottom surface 12 of the processing chamber 10, thereby preventing friction with the inner surface of the processing chamber 10 during rotation. By the configuration of the rotating unit 30, when the target body 20 is rotated, the electrolyte (S) passing through the vortex hole 22 forms a vortex by the rotational force.

The filter 40 is provided between the substrate W and the target body 20 to filter metal ions from the electrolyte S. Here, the filter 40 may have a diameter corresponding to the substrate W so as to face the plating surface of the substrate W. Therefore, the filter 40 filters the foreign substances such as bubbles from the electrolyte solution S containing the metal ions separated from the target body 20, and then uniformly distributes them onto the substrate W and supplies the same. For reference, in the present embodiment, the filter 40 is illustrated as being composed of a single piece, but is not necessarily limited to this, it is obvious that a plurality of filters may be installed.

The plating process of the substrate plating apparatus 1 according to the present invention having the above configuration will be described below with reference to FIG. 2.

First, when the substrate W is immersed in the electrolyte S of the processing chamber 10 so as to face the target body 20 and a current is applied thereto, metal ions are separated from the target body 20 of the positive electrode (+). Melting into the electrolyte (S) phase. At the same time, the target body 20 is rotated by the rotational force of the rotating unit 30, so that the electrolyte solution S passing through the vortex hole 22 provided in the target body 20 is the substrate (W) and the target body ( A vortex is formed between 20). Therefore, the metal ions separated from the target body 20 are vortexed together with the electrolyte S, so that the metal ions can be smoothly moved upward, that is, toward the substrate W, without sinking by specific gravity.

Thereafter, the metal ions spread on the electrolyte S are filtered through the filter 40 and uniformly distributed to the entire surface of the substrate W, thereby reducing the reaction of the substrate W to which the cathode (-) is applied. As a result, a metal film is formed on the substrate W surface.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a perspective view schematically showing a substrate plating apparatus according to an embodiment of the present invention,

2 is a cross-sectional view of FIG. 1, and

3 is a perspective view schematically showing only the target body shown in FIG.

Description of the Related Art [0002]

1: Substrate Plating Apparatus 10: Process Chamber

20: target body 22: voryu hall

30: rotating part 40: filter

W: wafer

Claims (6)

A processing chamber in which the electrolyte is accommodated and the substrate to which the cathode (-) is applied is selectively immersed; A target body immersed in the electrolyte to generate metal ions when positive electrode (+) is applied; And A rotating part for rotating the target body; Including; The target body has a plurality of vortex holes penetrated to pass through the electrolyte, substrate plating apparatus, characterized in that to form a vortex when rotating. The method of claim 1, And the target body is connected to the rotating part spaced apart from a bottom surface of the processing chamber. The method of claim 1, On the bottom of the target body, the positive electrode portion to which the anode is applied is installed in contact with, Substrate plating apparatus, characterized in that the positive electrode portion is provided with a plurality of communication holes corresponding to the vortex hole. The method according to any one of claims 1 to 3, And a filter provided between the substrate and the target body to filter and uniformly distribute metal ions on the electrolyte solution to the substrate. A processing chamber in which the electrolyte is accommodated and the substrate to which the cathode (-) is applied is selectively immersed; A plurality of vortex holes which are immersed in the electrolyte of the processing chamber so as to face the substrate to generate metal ions upon application of positive electrode (+), but not in contact with the inner surface of the processing chamber, and penetrated in the radial direction to allow the electrolyte to pass through Target body having a; And A rotating part for rotating the target body; Substrate plating apparatus comprising a. The method of claim 5, On the bottom of the target body, the positive electrode portion to which the anode is applied is installed in contact with, Substrate plating apparatus, characterized in that the positive electrode portion is provided with a plurality of communication holes corresponding to the vortex hole.

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