KR20100063248A - Wafer plating apparatus and method for the same - Google Patents

Abstract

PURPOSE: A wafer plating apparatus and a method thereof are provided to form an anti-oxidation layer on a wafer with the minimum anti-oxidation solution. CONSTITUTION: A wafer plating apparatus comprises a plating part(30) for plating a wafer(W), a cleaning part which cleans the plated wafer, a supporting part which supports and rotates the wafer and transfers the wafer between the plating part and the cleaning part, and an anti-oxidation part(60) which forms an anti-oxidation layer on the wafer before the wafer leaves the plating part.

Description

Substrate Plating Apparatus and its Method {WAFER PLATING APPARATUS AND METHOD FOR THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing, and more particularly, to a substrate plating apparatus capable of preventing oxidation of a substrate plated for metal wiring.

In general, in order to form a metal wiring on a silicon substrate constituting a semiconductor, a metal film is formed on the entire surface of the substrate to pattern the metal film. At this time, the metal film formed on the entire surface of the substrate is formed of aluminum or copper. Among these, the copper film has a melting point higher than that of the aluminum film and has a large resistance to electric mobility, thereby improving the reliability of the semiconductor device. In addition, the substrate on which the copper film is formed has an advantage of low signal resistance and an increase in signal transmission speed. Therefore, as for the metal film formed on the said board | substrate, a copper film is generally mainly adopted instead of an aluminum film.

Currently, as a method for forming and patterning a copper film on the substrate, physical vapor deposition or chemical vapor deposition is mainly employed, but chemical vapor deposition, that is, electrical resistance due to its excellent resistance to electrical mobility and low manufacturing cost, Plating is preferred.

The principle of copper electroplating for the substrate is that copper ions are separated from the copper plate by forming a copper film on the substrate by dipping the copper plate of the anode and the substrate of the cathode onto the electrolyte solution of the processing chamber.

On the other hand, the substrate on which the copper film is formed by the principle of copper electroplating as described above is moved to the cleaning chamber for the cleaning and etching process. The substrate thus moved out of the processing chamber to the cleaning chamber is exposed to the atmosphere. Therefore, the board | substrate with which the said copper film was formed is oxidized in air | atmosphere, and the quality fall of a board | substrate is caused.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a substrate plating apparatus and method for preventing oxidation of a plated substrate.

Another object of the present invention is to provide a substrate plating apparatus and method for forming an antioxidant film adjacent to a plated substrate.

Still another object of the present invention is to provide a substrate plating apparatus and method for forming an antioxidant film before the plated substrate is drawn out from the plating portion.

A substrate plating apparatus for achieving the above object, a plating portion for plating a substrate, a cleaning portion for cleaning the plated substrate, supporting and rotating the substrate, transfer the substrate between the plating portion and the cleaning portion And an oxidation preventing portion for forming an anti-oxidation film on the substrate before the plated substrate leaves the plating portion.

According to the present invention, the plating part includes a plating chamber in which the electrolyte solution in which the substrate is immersed is received, a target member immersed in the electrolyte solution in the plating chamber, and an electrode applying part for applying a cathode and an anode to the substrate and the target member, respectively. .

According to the present invention, the anti-oxidation part includes a spray nozzle which is provided on the support part and sprays the anti-oxidant liquid onto the plated surface of the substrate. The anti-oxidation portion minimizes the air exposure of the substrate by spraying the anti-oxidation liquid as soon as the plated substrate is pulled out of the electrolyte contained in the plating chamber. In addition, when the substrate is rotated by the support, the antioxidant solution is injected from the injection nozzle, thereby forming an antioxidant film on the substrate with a minimum amount of pure water. For reference, the antioxidant solution sprayed by the antioxidant part includes pure water (DI Water).

According to another aspect of the present invention, there is provided a substrate plating apparatus including a plating chamber configured to include a target member to which an anode is applied and an electrolyte solution in which a substrate to which a cathode is applied is immersed, thereby forming a metal film on the substrate. A cleaning part for cleaning the substrate on which the film is formed, a supporting part for supporting and rotating the substrate, and transferring the substrate between the plating part and the cleaning part, and a substrate on which the metal film is formed is pulled out of the electrolyte solution, And a spray nozzle for spraying DI water.

A substrate plating method for achieving the object of the present invention includes the steps of forming a metal film on the substrate, forming an antioxidant film on the metal film of the substrate, and cleaning the substrate. More specifically, the metal film forming step is performed in the plating chamber containing the electrolyte in which the target member to which the anode is applied is immersed, and the antioxidant film forming step is performed before the substrate leaves the plating chamber.

According to the present invention having the above configuration, first, by forming an antioxidant film on the plated substrate, even if the plated substrate is exposed to the atmosphere does not occur oxidation. Thereby, the quality of the board | substrate manufactured is improved.

Second, the anti-oxidation unit is installed in the support portion for supporting and transporting the substrate, the anti-oxidation portion can be injected to the substrate adjacent to the substrate. Therefore, an antioxidant film can be formed in the surface of a board | substrate with a minimum amount of antioxidant liquid, and it does not reduce the density | concentration of electrolyte solution.

Third, as soon as the substrate immersed in the electrolyte and plated is pulled out of the electrolyte, pure water is sprayed to form an antioxidant film, thereby treating the surface of the substrate before the substrate is withdrawn from the plating chamber. This not only minimizes the atmospheric exposure of the plated substrate, but also prevents oxidation on the surface of the substrate even when the substrate is transferred to the cleaning portion.

Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

Referring to FIG. 1, the substrate plating apparatus 1 according to the present invention includes a storage unit 10, a transfer robot 20, a plating unit 30, a cleaning unit 40, a support unit 50, and an anti-oxidation unit ( 60).

The storage unit 10 is a place for storing the substrate (W) to be plated, and receives a plurality of substrates (W) to supply a single substrate (W) to the plating unit 30 to be described later.

The transfer robot 20 transfers the substrate W in a sheet between the storage part 10 and the plating part 30. That is, the transfer robot 20 picks up the substrate W stored in the storage unit 10 in a sheet and transfers it to the plating unit 30.

Since the technical configuration of the storage unit 10 and the transfer robot 20 as described above can be understood from a known technique, detailed description and illustration are omitted.

For reference, the substrate W described in the present invention is exemplified as a silicon wafer to be a semiconductor substrate, but is not limited thereto. That is, the substrate W may be a glass substrate for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP).

As shown in FIG. 2, the plating part 30 plate the metal film M on the substrate W, which is supplied to the sheet by the transfer robot 20. The plating unit 30 includes a plating chamber 31, a target member 32, a current applying unit 33, and the like.

The plating chamber 31 is accommodated with the electrolyte (S), the substrate (W) is selectively immersed. The plating chamber 31 has a cylindrical bath shape in which an upper portion of the plating chamber 31 is opened for access of the substrate W. As shown in FIG. However, the present invention is not necessarily limited thereto, and thus, the upper portion of the plating chamber 31 may be selectively opened by a cover or one side may be opened to accommodate the electrolyte S having a capacity in which the substrate W may be immersed. In addition, it is obvious that any one of various shapes in which the substrate W may be selectively moved in and out may be employed.

The target member 32 is immersed in the electrolyte (S), and contains metal ions for forming a metal film on the substrate (W). In this embodiment, the target member 32 is illustrated as being a copper plate. Therefore, the electrolyte (S) is an ion transfer medium for transferring the copper ions separated from the target member 32 to the substrate (W), exemplified as a copper sulfate solution.

The current applying unit 33 applies a positive electrode and a negative electrode to the target member 32 and the substrate W, which are immersed in the electrolyte S, respectively, so that the positive electrode applying body 34 and the negative electrode applying body 35 are applied. It includes. The anode applying body 34 contacts the target member 32 to anodize it, and the cathode applying body 35 cathodes the substrate W by contact with the substrate W. As shown in FIG.

When the positive electrode and the negative electrode are applied to the target member 32 and the substrate W by the current applying unit 33 having the above configuration, the copper ions generated by the reduction reaction of the target member 32 are electrolytic solution S It is transferred to the substrate (W) to form a metal film (M) by the oxidation reaction.

On the other hand, the plating bath 36, the first and the first between the target member 32 and the substrate (W) in order to more efficiently implement the transfer of metal ions, that is, copper ions generated from the target member 32 2 filters 37 and 39 are provided.

The plating bath 36 supports the edge portion of the target member 32 and the upper portion thereof is opened toward the substrate W. Therefore, the substrate W and the target member 32 face each other.

The first and second filters 37 and 39 sequentially filter copper ions generated from the target member 32 and then uniformly supply the same to the substrate W. To this end, the first filter 37 has a shape such as a funnel and rotates about the filter shaft 38, thereby filtering copper ions on the electrolyte S and making the concentration uniform. In addition, the second filter 39 is installed to face the plating surface of the substrate W, and evenly distributes the first filtered copper ions onto the substrate W. Therefore, the thickness of the metal film M formed in the said board | substrate W becomes uniform.

The cleaning part 40 cleans the substrate W drawn from the plating part 30. That is, the cleaning part 40 cleans the substrate W on which the metal film M is formed. More specifically, the cleaning unit 40 cleans the substrate (W) and then dryes a spin-rinse-dry (SRD) process, and removes a copper film formed at an edge of the substrate (W). Bead Removal process is performed. To this end, the cleaning unit 40 is provided with a separate nozzle for supplying the cleaning agent and the etching agent on the substrate (W), but the technical configuration of the cleaning unit 40 can be understood from the known technology, Description and illustration are omitted. For reference, the cleaning agent sprayed from the cleaning unit 40 includes pure water (DI Water).

The support part 50 transfers the substrate W between the plating part 30 and the cleaning part 40, and the substrate W during the plating and cleaning process by the plating part 30 and the cleaning part 40. ). More specifically, the support part 50 includes a chuck 51 supporting the substrate W and a shaft 52 connected to the chuck 51 to drive the substrate W up or down. In addition, the plated portion 30 and the cleaning portion 40 is transferred into and out.

For reference, the support part 50 raises and lowers the substrate W in order to enter and exit the substrate W into and out of the plating part 30 and the cleaning part 40, and the plating process and cleaning of the substrate W are performed. In the process, the substrate W is rotated.

As shown in FIG. 3, the antioxidant part 60 forms an antioxidant film on the metal film M of the substrate W plated by the plating part 30. Here, the anti-oxidation unit 60 is composed of a spray nozzle for spraying DI water to the substrate (W), the anti-oxidation unit 60 is a pair to face the edge of the substrate (W) Is prepared. On the other hand, the oxidation prevention unit 60 is connected to the pure water supply unit 61 receives the pure water.

As described above, the anti-oxidation part 60 includes the pure water before the substrate W on which the metal film M is formed is pulled out of the electrolyte S and drawn out from the plating chamber 31. Spray onto the bed. Therefore, the anti-oxidation part 60 prevents the oxidation phenomenon due to the air exposure of the metal film M generated during the transfer of the substrate W to the cleaning part 40.

The anti-oxidation part 60 is installed on the support part 50 so as to be adjacent to the edge part of the metal film M. At this time, the support part 50 rotates the substrate W, and a small amount of pure water is injected through the anti-oxidation part 60 onto the substrate W thus rotated. Therefore, even if a small amount of pure water is injected onto the substrate W, an anti-oxidation film that can cover the metal film M by the centrifugal force of the substrate W is formed.

For reference, the rest of the pure water sprayed through the anti-oxidation unit 60 may not be formed and fall into the electrolyte (S) to be diluted in the electrolyte (S). However, since the amount of pure water diluted in the electrolyte S is very small and the electrolyte S is continuously supplied to the plating chamber 31, the concentration of the electrolyte S is kept constant.

An operation of the substrate plating apparatus 1 according to the present invention having the above configuration will be described with reference to FIGS. 1 to 4.

First, as shown in FIG. 4, a metal film M is formed in the plating part 30 on the substrate W (S10). Here, the substrate W is pulled out by the transfer robot 20 from the storage unit 10 and transferred to the plating unit 30, and the substrate W thus transported is supported by the support unit 50. It is inserted into the plating chamber 31 in the state.

As illustrated in FIG. 2, the substrate W inserted into the plating chamber 31 is plated by a metal ion, ie, copper ion, immersed in the electrolyte S and separated from the target member 32 to which the anode is applied. do. At this time, the substrate W is in contact with the negative electrode applying body 35 and is in a negative state.

When the metal film M is thus formed on the substrate W (S10), as shown in FIG. 3, the substrate W is pulled out of the electrolyte S. As shown in FIG. Then, the anti-oxidation unit 60 sprays a predetermined amount of pure water on the edge portion of the substrate W, and the sprayed pure water is spread to the surface of the substrate W by the centrifugal force of the rotating substrate W. An antioxidant film is formed (S20).

When the anti-oxidation film is formed on the substrate W on which the metal film M is formed (S20), the substrate W is withdrawn from the plating chamber 31 and cleaned by the cleaning unit 40 (S30). . In this case, even when the substrate W is exposed to the air to be transferred to the cleaning part 40, the metal film M is protected by the anti-oxidation film, and thus the metal film M is not oxidized.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a configuration diagram schematically showing a substrate plating apparatus according to an embodiment of the present invention,

FIG. 2 is a cross-sectional view schematically illustrating a substrate plating process in the plating unit illustrated in FIG. 1;

3 is a cross-sectional view schematically showing a process of forming an antioxidant film on a plated substrate, and

4 is a flowchart schematically showing a substrate plating method according to the present invention.

<Description of the symbols for the main parts of the drawings>

1: Substrate Plating Device 10: Storage

20: transfer robot 30: plating part

31: plating chamber 40: cleaning part

50: support 60: antioxidant

Claims (10)

A plating unit for plating a substrate; A cleaning unit for cleaning the plated substrate; A support part for supporting and rotating the substrate and transferring the substrate between the plating part and the cleaning part; And An anti-oxidation unit forming an anti-oxidation film on the substrate before the plated substrate leaves the plating unit; Substrate plating apparatus comprising a. The method of claim 1, The antioxidant part, And a spray nozzle which is provided in the support part and sprays an antioxidant solution to the plating surface of the substrate. The method of claim 2, The plating part, A plating chamber in which an electrolyte solution in which the substrate is immersed is accommodated; A target member immersed in the electrolyte in the plating chamber; And An electrode applying unit for applying a cathode and an anode to the substrate and the target member, respectively; Substrate plating apparatus comprising a. The method of claim 3, wherein The antioxidant part, And as soon as the plated substrate is pulled out of the electrolyte, spraying the antioxidant solution. The method of claim 4, wherein And the antioxidant solution is supplied from the injection nozzle when the substrate is rotated by the support part. 6. The method according to any one of claims 1 to 5, And the anti-oxidation unit sprays DI water onto the metal film of the substrate. A plating unit including a target member to which an anode is applied and a plating chamber to receive an electrolyte solution in which a substrate to which the cathode is applied is immersed, thereby forming a metal film on the substrate; A cleaning unit for cleaning the substrate on which the metal film is formed; A support part for supporting and rotating the substrate and transferring the substrate between the plating part and the cleaning part; And A spray nozzle for spraying DI water onto the metal film of the substrate when the substrate on which the metal film is formed is pulled out of the electrolyte solution; Substrate plating apparatus comprising a. The method of claim 7, wherein The spray nozzle is installed on the support portion, the substrate plating apparatus, characterized in that for spraying the pure water near the edge portion of the metal film during the rotation of the substrate. Forming a metal film on the substrate; Forming an anti-oxidation film on the metal film of the substrate; And Cleaning the substrate; Substrate plating method comprising a. The method of claim 9, The metal film forming step is made in the plating chamber for receiving the electrolyte immersed in the target member to which the anode is applied, The anti-oxidation film forming step is performed before the substrate leaves the plating chamber.

Images