JP4087839B2 - Plating equipment - Google Patents

Description

  The present invention relates to a plating apparatus for performing metal plating such as copper plating on a substrate to be plated such as a semiconductor wafer.

  In recent years, a metal plating apparatus such as copper plating is used to fill the groove or hole of a substrate to be plated in which fine grooves or holes for wiring are formed on the surface of a semiconductor wafer or the like. A method of filling holes and holes is used. Conventionally, there is a face-down type plating apparatus as this type of plating apparatus. As shown in FIG. 1, the plating apparatus has a substrate 102 such as a semiconductor wafer disposed on the plating tank 100 with its plating surface facing downward, and the plating solution Q in the plating tank 103 is supplied to the plating solution supply pipe by a pump 104. Through 105, it is made to eject from the bottom part of the plating tank main body 101, and the jet flow of the plating solution Q is applied perpendicularly to the plating surface of the substrate 102 to be plated.

  The plating solution Q that has overflowed the plating tank body 101 is collected by a collection tank 106 disposed outside the plating tank body 101. By applying a predetermined voltage between the anode electrode 107 and the cathode electrode 108, a plating current flows between the anode electrode 107 and the substrate 102 to be plated, and a plating film is formed on the plating surface of the substrate 102 to be plated. .

  In the conventional face-down type plating apparatus having the above configuration, in order to apply the jet of the plating solution Q perpendicularly to the substrate 102 to be plated, it is necessary to create a flow equally distributed in the circumferential direction on the substrate to be plated. Therefore, there is a problem that the dimension in the depth direction of the plating tank 100 becomes large.

  Further, when the anode electrode 107 is an insoluble electrode, the additive in the plating solution is oxidized and decomposed and is abnormally consumed, or the surface of the substrate to be plated and the fine holes formed on the surface by the generated oxygen. There was a problem that plating defects occurred in the grooves.

  Further, in the face-down type plating apparatus, means for improving the uniformity of the film thickness of the plating film formed on the plating surface of the substrate 102 to be plated include changing the distance between the substrate 102 and the anode electrode 107, In addition to the uniform flow of the plating solution, there is optimization of the shape of the shielding plate 109 placed between the substrate 102 and the anode electrode 107 as shown in FIG. 2 in order to adjust the state of the electric field.

  Normally, when the anode electrode 107 and the cathode (substrate 102 to be plated) are parallel plates, the shielding plate 109 adjusts the size of the opening hole 109a provided in the center thereof, thereby allowing an electric field within the surface of the substrate 102 to be plated. It is possible to improve the uniformity. However, in this case, the surrounding film thickness tends to increase due to the wrapping of electricity around the substrate to be plated 102 in the vicinity of the substrate to be plated 102, and the size of the opening hole 109a needs to be reduced, resulting in FIG. As shown in FIG. 2, there is a problem that an M-type film thickness distribution is likely to be obtained.

In FIG. 12, the vertical axis indicates the plating film thickness (nm), the horizontal axis indicates the distance (mm) from the wafer edge that is the substrate to be plated, and SSW-NNE is the film thickness of the south-southwest-north-north-east section of the wafer. WSW-ENE indicates the film thickness of the west-southwest-west-northwest section of the wafer, WNW-ESE indicates the film thickness of the west-northwest-east-southeast section of the wafer, and NNW-SSE indicates the film thickness of the north-northwest-southeast section.
JP-A-10-330991 JP-A-3-260085

  The present invention has been made in view of the above points, and can reduce the depth dimension of the plating tank. The additive in the plating solution is oxidatively decomposed and consumed abnormally. It is an object of the present invention to provide a plating apparatus capable of performing metal plating with a uniform film thickness without causing plating defects in fine holes and grooves formed on the surface.

  It is another object of the present invention to provide a plating apparatus capable of performing metal plating with a uniform film thickness by adjusting the electric field in the plating surface of the substrate to be plated.

In order to solve the above problems, the invention according to claim 1 is a plating apparatus comprising a plating tank, in which a semiconductor wafer is used as a substrate to be plated and a plating solution is brought into contact with the plating surface to perform metal plating. The plating tank includes a plating solution chamber configured to flow into the plating solution and overflow from the top, and arranges the substrate to be plated with the plating surface facing downward in the plating solution chamber . an anode electrode disposed by pairs countercurrent provided spacing 20~60mm between the lower surface of該被plating substrate downward, between the anode electrode and the substrate-to-be-plated, the plated effective diameter of該被plating substrate the cylindrical electric field compensation ring length 10~50mm having a smaller inner diameter, the upper end of the electric-field correction ring position away 1~10mm from the lower surface of該被plating substrate, and electric field Positive ring center and the center of the plated substrate is arranged so as to be positioned coaxially, providing the plating liquid supply chamber of the annular inner peripheral surface of the plating solution chamber below the the object to be plated substrate of the plating solution chamber In addition, a number of nozzles are provided in the circumferential direction on the inner peripheral surface of the plating solution supply chamber, and the plating solution flows into the plating solution chamber from the plurality of nozzle holes in parallel to the surface to be plated of the substrate to be plated. It is characterized by having constituted so .

Invention according to claim 2, in the plating apparatus according to claim 1, wherein the plating tank, the plating-target substrate rotating mechanism for rotating while downward the plating surface to be plated substrate in the plating solution chamber It is characterized by comprising.

According to the invention described in claim 1, arranged spacing 20~60mm the anode electrode is paired direction is provided between the lower surface of該被plating substrate below the substrate-to-be-plated, the plated substrate and the anode Between the electrodes, a cylindrical electric field correction ring having a length of 10 to 50 mm having an inner diameter smaller than the effective plating diameter of the substrate to be plated, and the upper end of the electric field correction ring being 1 to 10 mm from the lower surface of the substrate to be plated. Place the center of the electric field correction ring and the center of the substrate to be plated at a distance from each other, and place the annular plating solution on the inner peripheral surface of the plating solution chamber below the substrate to be plated in the plating solution chamber In addition to providing a supply chamber, a large number of nozzles are provided in the circumferential direction on the inner peripheral surface of the plating solution supply chamber, and the plating solution is parallel to the surface to be plated of the substrate to be plated from the numerous nozzle holes. and then, is flowing, the Thickness of Kki substrate surrounding never increased. However, there is sheet resistance of the substrate to be plated, and if the power supply is taken from the outer periphery, a large amount of current flows through the outer periphery. Therefore, as an improvement measure, an opening is formed in the center between the substrate to be plated and the anode electrode. It is necessary to arrange the shield plate.

According to the second aspect of the present invention, the plating surface can be uniformly contacted with the plating solution by providing the plating substrate rotating mechanism and rotating the substrate to be plated with the plating surface facing downward in the plating solution chamber. A plating film having a uniform thickness can be formed. In addition, after plating is completed, the substrate to be plated is lifted from the surface of the plating solution and rotated at a high speed, so that the plating solution adhering in the plating bath can be shaken off, and the plating solution is less likely to be contaminated outside. Become.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 is a diagram showing a configuration example of a plating tank of the plating apparatus according to the present invention. As shown in the figure, the main plating tank 10 contains a substrate holder 12 for holding a substrate to be plated 13 such as a semiconductor wafer in a plating tank body 11. The substrate holding body 12 includes a substrate holding portion 12-1 and a shaft portion 12-2. The shaft portion 12-2 is rotatably supported on the inner wall of a cylindrical guide member 14 via bearings 15 and 15. Yes. The guide member 14 and the substrate holder 12 can be moved up and down with a predetermined stroke by a cylinder 16 provided at the top of the plating tank body 11.

  The substrate holder 12 can be rotated in the direction of arrow A via a shaft portion 12-2 by a motor 18 provided in the upper part of the guide member 14. The substrate holder 12 is provided with a space C for accommodating the substrate pressing member 17 including the substrate pressing portion 17-1 and the shaft portion 17-2. The substrate pressing member 17 is provided on the substrate holding member 12. The cylinder 19 provided at the upper part in the shaft portion 12-2 can be moved up and down with a predetermined stroke.

  An opening 12-1a communicating with the space C is provided below the substrate holding portion 12-1 of the substrate holder 12, and an edge of the substrate 13 to be plated is formed above the opening 12-1a as shown in FIG. A step portion 12-1b on which the portion is placed is formed. The edge portion of the substrate 13 to be plated is placed on the stepped portion 12-1b, and the upper surface of the substrate 13 to be plated is pressed by the substrate pressing portion 17-1 of the substrate pressing member 17 so that the edge portion of the substrate 13 to be plated is pressed. Is sandwiched between the substrate pressing portion 17-1 and the stepped portion 12-1b. And the lower surface (plating surface) of the to-be-plated board | substrate 13 is exposed to the opening 12-1a. 4 is an enlarged view of a portion B in FIG.

  A flat plating solution chamber 20 is provided below the substrate holding portion 12-1 of the plating tank body 11, that is, below the plating surface of the substrate 13 to be exposed exposed to the opening 12-1 a, and below the plating solution chamber 20. A flat plating solution introduction chamber 22 is provided through a perforated plate 21 in which a large number of holes 21a are formed. In addition, a collecting rod 23 is provided outside the plating solution chamber 20 for collecting the plating solution Q that overflows the plating solution chamber 20.

The plating solution Q collected by the collecting rod 23 is returned to the plating solution tank 24. The plating solution Q in the plating solution tank 24 is introduced horizontally from both sides of the plating solution introduction chamber 22 by a pump 25. The plating solution Q introduced from both sides of the plating solution introduction chamber 22 flows into the plating solution chamber 20 through a hole 21a of the perforated plate 21 as a vertical jet. The gap between the perforated plate 21 and the substrate to be plated 13 is 5 to 15 mm, and the jet of the plating solution Q through the hole 21a of the perforated plate 21 is maintained as a uniform jet while maintaining the vertical rise. Contact the plating surface. The plating solution Q that has overflowed the plating solution chamber 20 is collected by the collecting rod 23 and flows into the plating solution tank 24. That is, the plating solution Q is circulated between the plating solution chamber 20 of the plating tank body 11 and the plating solution tank 24.

The plating solution level L _{Q in the} plating solution chamber 20 is slightly higher by ΔL than the plating solution level L _{W of the} substrate 13 to be plated, and the entire plating surface of the substrate 13 is in contact with the plating solution Q. .

  The step 12-1b of the substrate holder 12-1 of the substrate holder 12 is provided with an electrical contact 27 that is electrically connected to the conductive portion of the substrate 13 to be plated. The electrical contact 27 is an electric wire (not shown). Are electrically connected to the brush 26 and further connected to the cathode of an external plating power source (not shown) via the brush 26. Further, an anode electrode 28 is provided at the bottom of the plating solution introduction chamber 22 of the plating tank main body 11 so as to face the substrate 13 to be plated, and the anode electrode 28 is connected to the anode of the plating power source. At a predetermined position on the wall surface of the plating tank body 11, a carry-in / out slit 29 for taking in and out the substrate to be plated 13 with a substrate carry-in / out jig such as a robot arm is provided.

  In the plating apparatus having the above-described configuration, when performing plating, first, the cylinder 16 is operated, and the substrate holder 12 is guided together with the guide member 14 by a predetermined amount (the substrate 13 to be plated held by the substrate holding portion 12-1 is loaded and unloaded). And the cylinder 19 is operated to raise the substrate pressing member 17 by a predetermined amount (to a position where the substrate pressing portion 17-1 reaches the upper portion of the carry-in / out slit 29). In this state, the substrate to be plated 13 is carried into the space C of the substrate holder 12 with a substrate carry-in / out jig such as a robot arm, and the substrate to be plated 13 is placed on the stepped portion 12-1b so that the plating surface faces downward. Place. In this state, the cylinder 19 is operated and lowered until the lower surface of the substrate pressing portion 17-1 contacts the upper surface of the substrate to be plated 13, and the substrate to be plated 13 is placed between the substrate pressing portion 17-1 and the stepped portion 12-1b. Hold the edge of the.

It actuates the cylinder 16 in this state, lower by the ΔL than (plating fluid level L _Q until the plated surface is in contact with the plating solution Q in the plating solution chamber 20 of the substrate holder 12 guide members 14 each to be plated substrate 13 Down). At this time, the motor 18 is started and lowered while rotating the substrate holder 12 and the substrate to be plated 13 at a low speed. The plating solution chamber 20 is filled with the plating solution Q, and a vertical upward flow through the numerous holes 21 a of the perforated plate 21 is ejected. In this state, when a predetermined voltage is applied between the anode electrode 28 and the electrical contact 27 from the plating power source, a plating current flows from the anode electrode 28 to the substrate 13 to be plated, and a plating film is formed on the plating surface of the substrate 13 to be plated. Is done.

  During the plating, the motor 18 is operated to rotate the substrate holder 12 and the substrate to be plated 13 at a low speed. This low speed rotation is set so that a plating film having a uniform film thickness can be formed on the plating surface of the substrate to be plated 13 without disturbing the vertical jet of the plating solution Q in the plating solution chamber 20.

When plating is completed by operating the cylinder 16, to raise the substrate-to-be-plated 13 and the substrate holder 12, when the lower surface of the substrate holding portion 12-1 becomes above the plating liquid surface level L _Q, rotate the motor 18 at high speed The plating solution adhering to the plating surface of the substrate to be plated and the lower surface of the substrate holding portion 12-1 is shaken off by centrifugal force. When the plating solution is shaken off, the substrate to be plated 13 is raised to the position of the carry-in / out slit 29, and when the cylinder 19 is operated to raise the substrate pressing portion 17-1, the substrate to be plated 13 is released and the substrate is held. It will be in the state mounted in the step part 12-1b of the part 12-1. In this state, a substrate carry-in / out jig such as a robot arm is caused to enter the space C of the substrate holder 12 through the carry-in / out slit 29, and the substrate 13 to be plated is picked up and carried out to the outside.

  By configuring the plating apparatus as described above, a vertical upward flow of the plating solution is formed through the numerous holes 21a of the perforated plate 21 in the plating solution chamber 20, so that the plating solution jet is applied to the substrate to be plated as in the prior art. Compared to the face-down type plating tank applied perpendicularly to the plating tank, the running distance of the plating solution is small, and the depth dimension of the plating tank 10 can be reduced. Therefore, it is possible to arrange a plurality of plating tanks 10 in a stacked manner.

  In the above embodiment, electrolytic plating has been described as an example, but electroless plating can be performed without providing the electrical contact 27 and the anode electrode 28.

  FIG. 5 is a view showing another configuration example of the plating tank of the plating apparatus according to the present invention. In FIG. 5, since the upper part from the substrate holder 12 is the same as FIG. The plating tank 10 is provided with an anode chamber 31 for introducing a plating solution or a conductive liquid Q ′ through an ion exchange membrane or a porous neutral diaphragm 30 below the plating solution introduction chamber 22, and at the bottom of the anode chamber 31. An anode electrode 28 is provided. The plating solution or conductive liquid Q ′ in the liquid tank 33 is introduced into the anode chamber 31 by the pump 32, and the plating solution or conductive liquid Q ′ flowing out from the anode chamber 31 returns to the liquid tank 33. Yes. That is, the plating solution or the conductive liquid Q ′ in the liquid tank 33 circulates between the anode chamber 31 and the liquid tank 33.

  As described above, the anode chamber 31 is provided in the plating tank 10 via the ion exchange membrane or the porous neutral diaphragm 30 below the plating solution introduction chamber 22, and the plating solution or the conductive liquid Q ′ is allowed to flow, whereby the anode electrode Even if an insoluble electrode is used for the electrode 28, the oxidative decomposition of the additive can be prevented on the surface of the anode electrode 28, and the generated oxygen gas is blocked by the ion exchange membrane or the porous neutral diaphragm 30 and the substrate to be plated. 13 plating surface is not reached. Thereby, abnormal consumption of the additive in the plating solution Q can be prevented, and it is possible to prevent plating defects from being generated in the fine holes, grooves and surface of the plating surface of the substrate to be plated by the oxygen gas.

  In the plating apparatus having the above configuration, by reducing the distance between the substrate 13 to be plated and the anode electrode 28, the electric field between the anode electrode 28 and the substrate 13 to be plated can be made uniform. A plating film having a uniform film thickness can be formed on the plating surface. The distance between the substrate to be plated 13 and the anode electrode 28 is preferably 10 mm to 30 mm.

  In the above-described plating apparatus, the porous plate 21 is a plate in which a large number of holes 21a are uniformly formed on the entire surface. However, the porous plate 21 is not limited to this, and as shown in FIG. A hole 21b having a diameter larger than that of the surrounding porous 21a may be provided in the central portion.

  As described above, by providing the hole 21b having a diameter larger than the hole diameter of the surrounding porous 21a in the central part of the porous plate 21, the central part of the vertical jet of the plating solution passing through the porous plate 21 is strengthened, and the substrate to be plated The vertical jet contacted with the 13 plating surfaces flows to the outer peripheral portion without being disturbed along the surface to be plated. When the substrate to be plated 13 is carried into the plating tank 10, it is immersed from the central portion of the substrate to be plated 13, and the bubbles on the surface to be plated can be quickly released. The number of holes 21b having a diameter larger than the diameter of the hole 21a is not limited to one, and a plurality of holes 21b may be provided in the center.

  7 and 8 are diagrams showing another configuration example of the plating tank of the plating apparatus according to the present invention. 7, since the upper part from the substrate holder 12 is the same as FIG. 3, its illustration is omitted. 8 is a cross-sectional view taken along the line AA in FIG. As shown in the figure, in this plating apparatus, a cylindrical nozzle plate 34 is disposed on the outer periphery of the plating solution introduction chamber 22 of the plating tank body 11, and a plating solution supply unit 35 is provided on the outer periphery of the nozzle plate 34. Yes. The nozzle plate 34 is formed with a nozzle hole 34 a for ejecting the plating solution Q supplied to the plating solution supply unit 35 into the plating solution introduction chamber 22. The flow direction of the plating solution Q ejected from the nozzle hole 34 a is horizontal and eccentric from the center of the plating solution introduction chamber 22.

  A spiral guide vane 38 is provided in the plating solution introduction chamber 22 to collect the flow of the plating solution Q flowing from the nozzle hole 34a of the nozzle plate 34 at the center. The plating solution supply section 35 is provided with a plating solution inlet 36, and the flow direction of the plating solution Q flowing from the plating solution inlet 36 is also horizontal and decentered from the center of the plating solution introduction chamber 22.

  In the plating apparatus having the above-described configuration, the plating solution Q that has flowed into the plating solution supply unit 35 from the plating solution inlet 36 is swirled around the annular plating solution supply unit 35, and further horizontally from the nozzle hole 34 a of the nozzle plate 34. In addition, the flow flows in an eccentric direction from the center of the plating solution introduction chamber 22 and flows into the plating solution introduction chamber 22, and is further guided by the guide vane 38 so as to be concentrated in the central portion. Thereby, the vertical jet ejected from the hole 21b having a large hole diameter at the center of the perforated plate 21 becomes a stronger jet than the surrounding hole 21a having a small hole diameter.

  As described above, by rotating the inflow direction of the plating solution Q flowing in from the plating solution nozzle plate 34 horizontally and from the center of the plating solution introduction chamber 22, the rotation of the plating solution Q into the plating solution introduction chamber 22. A flow is formed, and the rotating flow of the plating solution Q is ejected to the plating solution chamber 20 through the perforated plate 21, and a jet of the plating solution Q having a rotating component is generated in the plating solution chamber 20. The plating solution rotation flow in the plating solution chamber 20 has the same direction as the plating solution rotation flow in the plating solution introduction chamber 22. By rotating the substrate to be plated 13 in the direction opposite to the rotational flow in the plating solution introduction chamber 22, the relative speed of the plating surface and the plating solution Q is increased, the concentration diffusion layer near the plating surface is thinned, and uniform. It is possible to form a plated film.

  Further, by providing the spiral guide vane 38, the plating solution flow from the nozzle hole 34a of the nozzle plate 34 is collected in the central portion below the porous plate 21, and the pressure of the plating solution Q in the central portion can be increased. Increase the vertical jet flow through the center of the perforated plate. Note that the guide vane 38 is not necessarily required when the plating solution flow from the nozzle hole 34 a of the nozzle plate 34 is smoothly collected in the central portion below the porous plate 21.

  FIG. 9 is a view showing another configuration example of the plating tank of the plating apparatus according to the present invention. 9, since the upper part from the board | substrate holding body 12 is the same as FIG. 3, the illustration is abbreviate | omitted. As shown in the figure, in the present plating apparatus, an annular plating solution supply chamber 50 is provided in the inner periphery of the plating solution chamber 20, and the plating solution Q is supplied from the inner periphery of the plating solution supply chamber 50 through a number of nozzle holes 51. 20 flows in the horizontal direction.

  A cylindrical electric field correction ring 52 is provided between the substrate to be plated 13 and the anode electrode 28. If the film thickness is not uniform due to the sheet resistance of the substrate to be plated 13 by reducing the distance between the substrate to be plated 13 and the anode electrode 28, the electrical wrap around the periphery of the substrate 13 to be plated As shown in FIG. 12, there is a problem that the film thickness of the plating film formed on the substrate to be plated 13 is not uniform. Therefore, here, an electric field correction ring 52 is provided to prevent electricity from wrapping around the outer periphery of the substrate 13 to be plated.

  The influence of the electrical wrap around the outer periphery of the substrate to be plated 13 varies depending on the distance between the substrate to be plated 13 and the anode electrode 28, but the distance between the substrate to be plated 13 and the anode electrode 28 assumed here is 20 to 60 mm. Therefore, the electric field correction ring 52 having a length of 10 to 50 mm and an inner diameter smaller than the effective plating diameter of the substrate 13 to be plated is used. It is effective to prevent the electricity from wrapping around to be located at a position 1 to 10 mm away from the lower surface of 13.

As an example, the distance between the substrate to be plated 13 and the anode electrode is 35 mm, the effective diameter φ194 of the substrate to be plated (semiconductor wafer) 13, the distance between the upper end of the electric field correction ring 52 and the lower surface of the substrate to be plated 13, and the electric field correction ring 52. The inner diameter is 190 mm, and the length of the electric field correction ring 52 is 15 mm. FIG. 13 shows the result of plating with a current density of 2.5 A / dm ² , a time of 120 seconds, and a film thickness of 1100 nm under these conditions. Comparing FIG. 12 and FIG. 13, by providing the electric field correction ring 52, the wraparound of electricity is prevented and plating with a uniform film thickness is performed.

  FIG. 10 is a diagram showing an example of the overall configuration of a plating apparatus using the plating tank 10 having the above-described configuration according to the present invention. FIG. 10 (a) shows a plan configuration and FIG. 10 (b) shows a side configuration. As shown in FIG. 10, the plating apparatus 40 includes a loading unit 41, an unloading unit 42, a washing / drying tank 43, a load stage 44, a rough water washing tank 45, a plating stage 46, a pretreatment tank 47, a first robot 48 and a second robot. In this configuration, a robot 49 is provided. In each plating stage 46, the plating tank 10 having the configuration shown in FIG. That is, a total of four plating tanks 10 are arranged as a whole plating apparatus. This can be realized because the plating tank 10 can be made smaller in depth than the conventional plating tank 100 shown in FIG.

  In the plating apparatus 40 having the above-described configuration, the substrates to be plated 13 housed in a cassette placed on the load unit 41 are taken out one by one by the first robot 48 and transferred to the load stage 44. The to-be-plated substrate 13 transferred to the load stage 44 is transferred to the pretreatment tank 47 by the second robot 49 and pretreated in the pretreatment tank 47. The pre-processed substrate 13 is transferred to the plating tank 10 of the plating stage 46 by the second robot 49 and subjected to the plating process. The to-be-plated board | substrate 13 which the plating process was complete | finished is transferred to the rough water washing tank 45 by the 2nd robot 49, and a rough water washing process is performed. The to-be-plated substrate 13 that has been subjected to the rough water cleaning process is further transferred to the cleaning / drying tank 43 by the first robot 48, cleaned and dried, and then transferred to the unloading unit 42.

  As described above, the plating tank 10 according to the present invention includes a plating solution chamber 20 formed between the plating plate 10 of the substrate to be plated 13 and the perforated plate 21 disposed to face each other at a predetermined interval. A flat plating solution introduction chamber 22 formed below the porous plate 21 is provided, and the plating solution Q is poured into the plating solution introduction chamber 22 from the horizontal direction, and the substrate 13 to be plated is passed through the numerous holes 21 a of the porous plate 21. Since the flow of the plating solution perpendicular to the plating surface is formed, the depth dimension can be reduced as compared with a face-down type plating tank in which a conventional plating solution jet is applied perpendicularly to the substrate to be plated. Therefore, a plurality of plating tanks 10 can be arranged in an overlapping manner, and the installation space is reduced as a whole plating apparatus. If a conventional plating tank is used, as shown in FIG. 11, only one plating tank can be arranged on each plating stage 46, so the arrangement area of the plating stage 46 is double that in the case of FIG.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. For example, as the plating solution Q, a plating solution for performing other metal plating can be used in addition to a copper sulfate plating solution for performing copper plating.

It is a figure which shows the structural example of the plating tank of the conventional face down system. It is a figure which shows the method of adjusting the electric field between the conventional to-be-plated board | substrate and an anode electrode. It is a figure which shows the structural example of the plating tank of the plating apparatus which concerns on this invention. FIG. 4 is an enlarged view of a portion B in FIG. 3. It is a figure which shows the structural example of the plating tank of the plating apparatus which concerns on this invention. It is a figure which shows the shape of the perforated plate used for the plating apparatus which concerns on this invention. It is a figure which shows the structural example of the plating tank of the plating apparatus which concerns on this invention. It is AA sectional drawing of FIG. It is a figure which shows the structural example of the plating tank of the plating apparatus which concerns on this invention. It is a figure which shows the example of whole structure of the plating apparatus which concerns on this invention, Fig.10 (a) is the top view, FIG.10 (b) is the side view. It is a figure which shows the example of a planar structure of the whole conventional plating apparatus. It is a figure which shows the state of the plating film distribution at the time of plating with the conventional plating apparatus. It is a figure which shows the state of the plating film distribution at the time of plating with the plating apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Plating tank 11 Plating tank main body 12 Substrate holder 13 Substrate to be plated 14 Guide member 15 Bearing 16 Cylinder 17 Substrate holding member 18 Motor 19 Cylinder 20 Plating solution chamber 21 Porous plate 22 Plating solution introduction chamber 23 Collection vessel 24 Plating solution tank 24 Plating solution tank 25 Pump 26 Brush 27 Electrical contact 28 Anode electrode 29 Carry-in / out slit 30 Ion exchange membrane or porous neutral diaphragm 31 Anode chamber 32 Pump 33 Liquid tank 34 Nozzle plate 35 Plating solution supply part 36 Plating solution inlet 38 Guide vane 40 Plating Equipment 41 Load section 42 Unload section 43 Washing / drying tank 44 Load stage 45 Rough water washing tank 46 Plating stage 47 Pretreatment tank 48 First robot 49 Second robot 50 Plating solution supply chamber 51 Nozzle hole 52 Electric field correction ring

Claims (2)

In the plating apparatus which comprises a plating tank and performs metal plating by bringing a plating solution into contact with the plating surface as a substrate to be plated in the plating tank,
The plating tank includes a plating solution chamber configured to flow into the plating solution and overflow from the top to fill the inside,
While placing the object to be plated substrate the plated surface facing downward in the plating solution chamber, versus an anode electrode provided spacing 20~60mm between the lower surface of該被plating substrate below the該被plating substrate Place it facing,
Between the substrate to be plated and the anode electrode, a cylindrical electric field correction ring having a length smaller than the effective diameter of the substrate to be plated and having a length of 10 to 50 mm, and an upper end of the electric field correction ring is plated. Arranged so that the center of the electric field correction ring and the center of the substrate to be plated are located coaxially at a position 1 to 10 mm away from the lower surface of the substrate ,
An annular plating solution supply chamber is provided on the inner peripheral surface of the plating solution chamber below the substrate to be plated in the plating solution chamber, and a number of nozzles are provided in the circumferential direction on the inner peripheral surface of the plating solution supply chamber, A plating apparatus, wherein the plating solution flows from the plurality of nozzle holes into the plating solution chamber in parallel to the surface to be plated of the substrate to be plated . The plating apparatus according to claim 1 ,
The plating bath, the plating apparatus characterized by comprising the substrate-to-be-plated rotary mechanism for rotating while downward the plating surface to be plated substrate in the plating solution chamber.

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